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1. 发明授权

US08211537B2 Resin composition, and prepreg 失效
标题翻译：树脂组合物和预浸料
公开(公告)号：US08211537B2
公开(公告)日：2012-07-03
申请号：US12594278
申请日：2008-04-11
申请人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
发明人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
IPC分类号： B32B27/04 , B32B27/20 , B32B27/26 , B32B27/38 , C08L63/00 , B29C70/02
CPC分类号： C08J5/24 , C08G59/504 , C08J3/241 , C08J2363/00 , C08K5/41 , C08L63/00 , C08L2205/14 , Y10T156/10 , Y10T428/24994 , Y10T428/249948 , Y10T428/24995 , Y10T428/249952 , Y10T428/25 , Y10T428/254 , Y10T428/2938 , Y10T428/31511 , Y10T428/31515 , C08L2666/02
摘要： The present invention discloses a resin composition and a prepreg produced using the resin composition. The resin composition comprises, as essential components: 100 parts by mass of a component (A) which is an epoxy resin; 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles; and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent. The thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 μm and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 μm at a mass ratio of 3:1 to 1:3. The average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more.
摘要翻译：本发明公开了使用该树脂组合物制造的树脂组合物和预浸料坯。作为必要成分，树脂组合物含有作为环氧树脂的成分（A）100质量份， 41〜80质量份作为热塑性树脂粒子的成分（B）和20〜50质量份（以二氨基二苯砜换算）作为用包衣剂微胶囊化的二氨基二苯砜的组分（C）。热塑性树脂颗粒（B）至少包含平均粒径为1至50μm的热塑性树脂颗粒（B1）和平均粒径为2至100μm的热塑性树脂颗粒（B2），质量比为3： 1比1：3。热塑性树脂粒子（B2）的平均粒径D2与热塑性树脂粒子（B1）的平均粒径D1的平均粒径比D2 / D1为2以上。

2. 发明申请

US20100183862A1 RESIN COMPOSITION, AND PREPREG 失效
标题翻译：树脂组合物和PREPREG
公开(公告)号：US20100183862A1
公开(公告)日：2010-07-22
申请号：US12594278
申请日：2008-04-11
申请人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
发明人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
IPC分类号： B32B27/04 , C08K9/10 , B32B37/00
CPC分类号： C08J5/24 , C08G59/504 , C08J3/241 , C08J2363/00 , C08K5/41 , C08L63/00 , C08L2205/14 , Y10T156/10 , Y10T428/24994 , Y10T428/249948 , Y10T428/24995 , Y10T428/249952 , Y10T428/25 , Y10T428/254 , Y10T428/2938 , Y10T428/31511 , Y10T428/31515 , C08L2666/02
摘要： The present invention discloses: a resin composition comprising, as essential components, 100 parts by mass of a component (A) which is an epoxy resin, 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles, and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent, in which resin composition the thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 μm and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 μm at a mass ratio of 3:1 to 1:3 and the average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more, and a prepreg produced using the resin composition.
摘要翻译：本发明公开了一种树脂组合物，作为必要成分，将100质量份作为环氧树脂的成分（A），41〜80质量份作为热塑性树脂粒子的成分（B）和20质量份至50质量份（以二氨基二苯砜计）（以二氨基二苯基砜为单位），该组分（C）是用涂料微胶囊化的二氨基二苯砜，其中树脂组合物热塑性树脂颗粒（B）至少包含具有平均颗粒的热塑性树脂颗粒直径为1〜50μm，平均粒径为2〜100μm的热塑性树脂粒子（B2）的质量比为3:1〜1:3，平均粒径D2 / D1为平均粒径D2 的热塑性树脂粒子（B2）与热塑性树脂粒子（B1）的平均粒径D1的比为2以上，使用该树脂组合物制造的预浸料坯。

3. 发明授权

US08900401B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08900401B2
公开(公告)日：2014-12-02
申请号：US12846403
申请日：2010-07-29
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

4. 发明授权

US08766145B2 Process for producing semiconductive porcelain composition and heater employing semiconductive porcelain composition 失效
标题翻译：采用半导体瓷器组成的半导体陶瓷组合物和加热器的生产方法
公开(公告)号：US08766145B2
公开(公告)日：2014-07-01
申请号：US12920366
申请日：2009-03-12
申请人： Takeshi Shimada , Kentaro Ino , Toshiki Kida
发明人： Takeshi Shimada , Kentaro Ino , Toshiki Kida
IPC分类号： H05B3/10 , H05B3/14 , C04B35/468 , C04B35/64
CPC分类号： H01C7/025 , C04B35/46 , C04B35/4682 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/6583 , C04B2235/663 , H01C17/06533
摘要： To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material.There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.
摘要翻译：改善BaTiO3-（Bi1 / 2Na1 / 2）TiO3材料的跳跃特性。提供一种制备其中一部分Ba被Bi-Na取代的半导体陶瓷组合物的方法，该方法包括制备（BaQ）TiO 3煅烧粉末（其中Q是半导体掺杂剂）的步骤，步骤制备（BiNa）TiO 3煅烧粉末的步骤，将（BaQ）TiO 3煅烧粉末和（BiNa）TiO 3煅烧粉末混合的步骤，对混合的煅烧粉末进行成型和烧结的步骤，以及对获得的烧结体在600℃以下; 以及使用通过上述步骤制备的元件的PCT加热器。

5. 发明授权

US08557724B2 Semiconductor porcelain composition and method of producing the same 失效
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US08557724B2
公开(公告)日：2013-10-15
申请号：US12626700
申请日：2009-11-27
申请人： Takeshi Shimada , Koichi Terao , Kazuya Toji
发明人： Takeshi Shimada , Koichi Terao , Kazuya Toji
IPC分类号： C04B35/468 , C04B35/46 , H01B1/08 , H01C7/02
CPC分类号： C04B35/4682 , C01G23/006 , C01G29/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/62635 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B35/6303 , C04B2235/3201 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/96 , H01C7/025 , H01C17/06533 , H01G4/1227
摘要： A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.
摘要翻译：通过分别制备（BaR）TiO 3（R为La，Dy，Eu，Gd或Y）的组合物和（BiNa）TiO 3的组合物并在（a）的温度下煅烧（BaR）TiO 3的组成）来制备半导体陶瓷组合物的温度为900℃至1300℃，并在700℃至950℃下煅烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。类似地，通过分别制备（BaM）TiO 3（M为Nb，Ta或Sb）和（BiNa）TiO 3组成的组合物，并在900℃的温度下煅烧（BaM）TiO 3的组成，制备半导体瓷组合物 ℃至1300℃，并在700℃至950℃的温度下焙烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。

6. 发明申请

US20120175361A1 SEMICONDUCTOR CERAMIC COMPOSITION, METHOD FOR PRODUCING SAME, PTC ELEMENT AND HEAT GENERATING MODULE 审中-公开
标题翻译：半导体陶瓷组合物，其制造方法，PTC元件和发热模块
公开(公告)号：US20120175361A1
公开(公告)日：2012-07-12
申请号：US13391949
申请日：2010-10-05
申请人： Kentaro Ino , Takeshi Shimada , Toshiki Kida
发明人： Kentaro Ino , Takeshi Shimada , Toshiki Kida
IPC分类号： B23K13/08 , H01C7/02 , H01B1/08
CPC分类号： C04B35/4682 , C01G29/006 , C01P2002/50 , C01P2006/40 , C04B35/62685 , C04B35/64 , C04B2235/3201 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/5436 , C04B2235/6584 , C04B2235/95 , H01B1/08 , H01C7/025 , H05B3/141 , H05B2203/02
摘要： There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, which exhibits an excellent jump characteristic while reducing room temperature resistivity and which also reduces room temperature resistivity and exhibits small change with time.A semiconductor ceramic composition which is represented by a composition formula of [(Biθ—Naδ)x(Ba1-yRy)1-x]TiO3 (where R is at least one kind of rare earth elements), in which x, y, θ and δ satisfy 0
摘要翻译：提供了一种半导体陶瓷组合物，其中一部分BaTiO 3的Ba被Bi-Na取代，其具有优异的跳跃特性，同时降低室温电阻率，并且还降低室温电阻率并且随时间变化呈现小的变化。由[（Bi＆amp; Naa）x（Ba1-yRy）1-x] TiO3（其中R是至少一种稀土元素）的组成式表示的半导体陶瓷组合物，其中x，y，＆thetas; 并且δ满足0

7. 发明授权

US08038896B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08038896B2
公开(公告)日：2011-10-18
申请号：US11502416
申请日：2006-08-11
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

8. 发明授权

US07910509B2 Dielectric porcelain composition for use in electronic devices 有权
标题翻译：用于电子设备的介电瓷组合物
公开(公告)号：US07910509B2
公开(公告)日：2011-03-22
申请号：US11993722
申请日：2005-06-24
申请人： Tomoyuki Tada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura , Takeshi Shimada
发明人： Tomoyuki Tada , Kazuhiro Nishikawa , Kazuya Toji , Kazuhiro Kura , Takeshi Shimada
IPC分类号： C04B35/465
CPC分类号： H01B3/12 , C01G23/002 , C01P2002/50 , C01P2002/72 , C01P2006/32 , C01P2006/40 , C04B35/465 , C04B35/6262 , C04B35/62695 , C04B2235/3208 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3232 , C04B2235/3286 , C04B2235/5436 , C04B2235/608 , C04B2235/77 , C04B2235/786 , C04B2235/80
摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant ∈r is high, the Qf value is high and, the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO3 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain α-Al2O3 in the structure can be obtained, and the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high.
摘要翻译：本发明提供一种用于电子器件的电介质瓷组合物，其中相对介电常数εr高，Qf值高，并且可以在保持谐振频率下的温度系数τf的同时控制温度系数τf 小，Qf值高。根据本发明，当在基于LnAlO3-CaTiO3的电介质瓷组合物中，LnAlO 3和CaTiO 3的摩尔比被优化并且Al被少量的Ga取代时，具有LnAlO 3 -TiTiO 3固溶体作为主相和作为第二相的Al-Ga类氧化物的固溶体，并且在该结构中基本上不含有α-Al 2 O 3，并且可以在将温度系数τf保持在谐振频率的同时控制温度系数τf 小，Qf值高。

9. 发明授权

US07910027B2 Semiconductor ceramic composition and method for producing the same 有权
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US07910027B2
公开(公告)日：2011-03-22
申请号：US12281896
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： H01B1/08
CPC分类号： H01C7/025 , C01G23/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/4682 , C04B35/6262 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/656 , H01C7/045 , H01C17/06533 , H01G4/1227 , H01G7/06 , H01L21/31691 , H01L28/55
摘要： It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO3 or Ba(TiM)O3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO3 and TiO2 are remained therein; and a BNT calcined powder containing a (BiNa)TiO3 powder.
摘要翻译：旨在提供能够将居里温度向正方向移动以及获得优异的跳跃特性同时将室温电阻率增加至最小值的半导体陶瓷组合物。提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，半导体陶瓷组合物通过烧结含有（BaR）TiO 3或Ba（TiM）O 3的BT煅烧粉末的混合煅烧粉末而获得（其中R和M各自为半导体掺杂剂），其中一部分BaCO 3和TiO 2保留在其中; 和含有（BiNa）TiO 3粉末的BNT煅烧粉末。

10. 发明申请

US20100279847A1 SEMICONDUCTOR CERAMIC COMPOSITION 审中-公开
公开(公告)号：US20100279847A1
公开(公告)日：2010-11-04
申请号：US12810336
申请日：2008-12-24
申请人： Takeshi Shimada
发明人： Takeshi Shimada
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C01G23/002 , C01G23/006 , C01G29/006 , C01P2002/52 , C01P2006/40 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3224 , C04B2235/3227 , C04B2235/3234 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/608 , C04B2235/656 , C04B2235/6567 , C04B2235/6584 , C04B2235/80 , C04B2235/85 , H01C7/025
摘要： There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being capable of arbitrary controlling jump characteristic while maintaining room temperature resistivity low.A semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the composition having a P-type semiconductor at a grain boundary, is provided, and existence ratio of the P-type semiconductor is changed by calcination conditions, addition amount of additives, sintering conditions, and the like to thereby arbitrary control room temperature resistivity while maintaining jump characteristic high.
摘要翻译：提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，该半导体陶瓷组合物能够任意控制跳跃特性，同时保持室温电阻率较低。提供了一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，该组合物在晶界处具有P型半导体，并且通过煅烧条件改变P型半导体的存在比，添加量，烧结条件等，从而任意控制室温电阻率，同时保持跳跃特性高。

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