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1. 发明申请

US20090214401A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20090214401A1
公开(公告)日：2009-08-27
申请号：US12437941
申请日：2009-05-08
申请人： Masunori ISHIHARA , Masamichi SAKAGUCHI , Yasuhiro NISHIMORI , Yutaka KUDOU , Satoshi UNE
发明人： Masunori ISHIHARA , Masamichi SAKAGUCHI , Yasuhiro NISHIMORI , Yutaka KUDOU , Satoshi UNE
IPC分类号： B01J19/08
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供给与供给的传送气体相同的气体的供给系统到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

2. 发明授权

US07112805B2 Vacuum processing apparatus and vacuum processing method 失效
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US07112805B2
公开(公告)日：2006-09-26
申请号：US10875231
申请日：2004-06-25
申请人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
发明人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
IPC分类号： G01F23/00 , G01K5/08
CPC分类号： H01L21/67207 , H01L21/67167
摘要： The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers for subjecting a sample to vacuum processing; a vacuum carriage for carrying the sample into and out of the vacuum processing chamber; a switchable chamber capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette support for supporting a plurality of cassettes and a controller for controlling carrying of the sample from a cassette through the switchable chambers, the vacuum carriage means into and out of the vacuum processing chamber. The vacuum processing chamber is equipped with an etching chamber and a critical dimension measurement chamber for critical dimension inspection of the sample.
摘要翻译：本发明提供一种半导体制造装置，其能够防止样品的携带时间增加，样品输出的劣化，占地面积的增加和投资成本的增加。真空处理装置包括用于对样品进行真空处理的多个真空处理室; 用于将样品进入和离开真空处理室的真空托架; 能够在大气和真空之间切换以将样品进出真空处理室的可切换室; 用于支撑多个盒的盒支撑件和控制器，用于控制样品从盒通过可切换室的携带，真空托架装置进入和离开真空处理室。真空处理室配有蚀刻室和临界尺寸测量室，用于对样品进行临界尺寸检验。

3. 发明授权

US08277563B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08277563B2
公开(公告)日：2012-10-02
申请号：US13019131
申请日：2011-02-01
申请人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其包括（i）供给转移气体，该转移气体降低处理室和转移室之间的压力差，以防止颗粒附着在待处理样品上，被处理通过到处理室，在将样品转移到处理室之前; （ii）将所述样品转移到所述处理室中，同时继续将所述转移气体供给到所述处理室; （iii）在所述处理室中从所述转移气体产生等离子体，同时在转移所述样品的步骤之后继续将所述转移气体供给到所述处理室; 以及（iv）将从产生等离子体的步骤中使用的转移气体中提供给处理室的气体改变为用于对不同于清洁样品的处理样品进行等离子体处理的处理气体。

4. 发明申请

US20120125890A1 PLASMA PROCESSING METHOD 失效
标题翻译：等离子体处理方法
公开(公告)号：US20120125890A1
公开(公告)日：2012-05-24
申请号：US13011070
申请日：2011-01-21
申请人： Takeshi OHMORI , Yasuhiro NISHIMORI , Hiroaki ISHIMURA , Hitoshi KOBAYASHI , Masamichi SAKAGUCHI
发明人： Takeshi OHMORI , Yasuhiro NISHIMORI , Hiroaki ISHIMURA , Hitoshi KOBAYASHI , Masamichi SAKAGUCHI
IPC分类号： C23F1/00 , B08B5/00
CPC分类号： H01J37/32816 , B08B7/0035 , H01J37/32834
摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.
摘要翻译：在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。

5. 发明授权

US08114244B2 Method for etching a sample 有权
标题翻译：蚀刻样品的方法
公开(公告)号：US08114244B2
公开(公告)日：2012-02-14
申请号：US12396673
申请日：2009-03-03
申请人： Kousa Hirota , Yasuhiro Nishimori , Hiroshige Uchida
发明人： Kousa Hirota , Yasuhiro Nishimori , Hiroshige Uchida
IPC分类号： G06F19/00
CPC分类号： H01J37/32972 , H01J37/32862 , H01J37/32935
摘要： The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma processing uses an apparatus comprising a vacuum processing chamber, a gas supply apparatus, a plasma generating means for generating plasma, an emission spectroscope for monitoring the plasma emission, and a device for storing the emission spectrum, wherein a non-operating time of the apparatus (idling SS) occurs in which the mass production processing of the wafer is temporarily stopped, wherein during cleaning steps S2 and S2′ before and after idling SS, emission intensities SiF(1) and SiF(2) in the plasma including the information on the state of deposition of reaction products and the temperature on the uppermost surface of the reactor are monitored, and a database S4 is referred to based on these emission spectrums, so that the time of the plasma heating step S3 after the idling SS is controlled to heat the reactor, and after performing plasma heating S3, the next sample is subjected to etching S2.
摘要翻译：本发明提供一种用于进行能够保持稳定的处理轮廓的样品的蚀刻的批量生产处理的方法。用于对承载在真空处理反应器中的晶片进行等离子体处理的蚀刻的批量生产处理的方法使用包括真空处理室，气体供给装置，用于产生等离子体的等离子体产生装置的装置，用于监测等离子体发射和用于存储发射光谱的装置，其中发生装置（空载SS）的非操作时间，其中晶片的批量生产处理暂时停止，其中在清洁步骤S2和S2'之前和之后包括关于反应产物的沉积状态和反应器最上表面的温度的信息的等离子体中的怠速SS，发射强度SiF（1）和SiF（2），并且参考数据库S4 这些发射光谱，使得在空载SS之后的等离子体加热步骤S3的时间被控制以加热反应器，并且在执行等离子体加热S3，对下一个样品进行蚀刻S2。

6. 发明申请

US20110120495A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20110120495A1
公开(公告)日：2011-05-26
申请号：US13019131
申请日：2011-02-01
申请人： Masunori ISHIHARA , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori ISHIHARA , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

7. 发明授权

US07909933B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07909933B2
公开(公告)日：2011-03-22
申请号：US12437941
申请日：2009-05-08
申请人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
发明人： Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译：本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理房间。本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供应与供给的传送气体相同的气体的供应系统到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

8. 发明申请

US20100159704A1 METHOD FOR ETCHING A SAMPLE 有权
标题翻译：蚀刻样品的方法
公开(公告)号：US20100159704A1
公开(公告)日：2010-06-24
申请号：US12396673
申请日：2009-03-03
申请人： Kousa HIROTA , Yasuhiro NISHIMORI , Hiroshige UCHIDA
发明人： Kousa HIROTA , Yasuhiro NISHIMORI , Hiroshige UCHIDA
IPC分类号： H01L21/3065
CPC分类号： H01J37/32972 , H01J37/32862 , H01J37/32935
摘要： The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma processing uses an apparatus comprising a vacuum processing chamber, a gas supply apparatus, a plasma generating means for generating plasma, an emission spectroscope for monitoring the plasma emission, and a device for storing the emission spectrum, wherein a non-operating time of the apparatus (idling SS) occurs in which the mass production processing of the wafer is temporarily stopped, wherein during cleaning steps S2 and S2′ before and after idling SS, emission intensities SiF(1) and SiF(2) in the plasma including the information on the state of deposition of reaction products and the temperature on the uppermost surface of the reactor are monitored, and a database S4 is referred to based on these emission spectrums, so that the time of the plasma heating step S3 after the idling SS is controlled to heat the reactor, and after performing plasma heating S3, the next sample is subjected to etching S2.
摘要翻译：本发明提供一种用于进行能够保持稳定的处理轮廓的样品的蚀刻的批量生产处理的方法。用于对承载在真空处理反应器中的晶片进行等离子体处理的蚀刻的批量生产处理的方法使用包括真空处理室，气体供给装置，用于产生等离子体的等离子体产生装置的装置，用于监测等离子体发射和用于存储发射光谱的装置，其中发生装置（空载SS）的非操作时间，其中晶片的批量生产处理暂时停止，其中在清洁步骤S2和S2'之前和之后包括关于反应产物的沉积状态和反应器最上表面的温度的信息的等离子体中的怠速SS，发射强度SiF（1）和SiF（2），并且参考数据库S4 这些发射光谱，使得在空载SS之后的等离子体加热步骤S3的时间被控制以加热反应器，并且在执行等离子体加热S3，对下一个样品进行蚀刻S2。

9. 发明授权

US06291999B1 Plasma monitoring apparatus 有权
标题翻译：等离子体监测仪
公开(公告)号：US06291999B1
公开(公告)日：2001-09-18
申请号：US09163536
申请日：1998-09-30
申请人： Yasuhiro Nishimori , Michio Taniguchi , Kazuki Kondo
发明人： Yasuhiro Nishimori , Michio Taniguchi , Kazuki Kondo
IPC分类号： G01N2762
CPC分类号： H01J37/32174 , H01J37/32935 , H05H1/46
摘要： A plasma monitoring apparatus for monitoring a condition of plasma of a plasma load to which power is supplied from a high frequency power source through an impedance matcher provides with a first input impedance calculator for calculating an impedance as a first input impedance from a supply-side terminal of the matcher to the plasma load-side based on voltage, current and phase difference detected at the supply-side terminal of the matcher, a second input impedance calculator for calculating an impedance as a second input impedance from a load-side terminal of the matcher to the plasma load based on a impedance of a element of the matcher and the first input impedance and a plasma impedance calculator for calculating an impedance of the plasma load from the second input impedance and an impedance of a supply-side connecting the matcher and the plasma load.
摘要翻译：一种等离子体监测装置，用于监测从高频电源通过阻抗匹配器供电的等离子体负载的等离子体状态，提供第一输入阻抗计算器，用于从供给侧计算作为第一输入阻抗的阻抗基于在匹配器的供电侧端子处检测到的电压，电流和相位差，将匹配器的端子连接到等离子体负载侧;第二输入阻抗计算器，用于从负载侧端子计算作为第二输入阻抗的阻抗基于匹配器的元件的阻抗和第一输入阻抗的等离子体负载的匹配器以及用于计算来自第二输入阻抗的等离子体负载的阻抗和连接匹配器的供给侧的阻抗的等离子体阻抗计算器和等离子体负载。

10. 发明授权

US08486291B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US08486291B2
公开(公告)日：2013-07-16
申请号：US13011070
申请日：2011-01-21
申请人： Takeshi Ohmori , Yasuhiro Nishimori , Hiroaki Ishimura , Hitoshi Kobayashi , Masamichi Sakaguchi
发明人： Takeshi Ohmori , Yasuhiro Nishimori , Hiroaki Ishimura , Hitoshi Kobayashi , Masamichi Sakaguchi
IPC分类号： C03C15/00
CPC分类号： H01J37/32816 , B08B7/0035 , H01J37/32834
摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.
摘要翻译：在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。

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