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1. 发明授权

US09039865B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09039865B2
公开(公告)日：2015-05-26
申请号：US12694363
申请日：2010-01-27
申请人： Ken Yoshioka , Motohiko Yoshigai , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Ken Yoshioka , Motohiko Yoshigai , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32623 , H01J37/321 , H01J37/3211
摘要： The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.
摘要翻译：本发明提供一种等离子体处理装置，其中环状导体8a和8b布置在由内周线圈1a和外周线圈1b构成的感应天线1的附近。环形导体8a和8b的特征在于，从设备中心的半径和导体主体的横截面形状沿线圈的圆周角度变化。由于控制环状导体8a，8b与感应天线1之间以及环状导体8a，8b与周边位置之间的等离子体之间的互感，因此能够补偿沿着感应天线1的线圈的周长，并且提高所产生的等离子体中的电流的圆周方向的不均匀性。

2. 发明申请

US20120300357A1 METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE 审中-公开
标题翻译：用于修复静电切割装置的方法和装置以及静电切割装置
公开(公告)号：US20120300357A1
公开(公告)日：2012-11-29
申请号：US13572044
申请日：2012-08-10
申请人： Ken Yoshioka , Syuichi Takahashi , Yasuharu Sasaki
发明人： Ken Yoshioka , Syuichi Takahashi , Yasuharu Sasaki
IPC分类号： H01L21/687 , B32B37/16 , B32B37/12
CPC分类号： H01L21/6831 , H01L21/67132 , Y10T29/49746 , Y10T428/219 , Y10T428/24777 , Y10T428/24843 , Y10T428/249982 , Y10T428/249985
摘要： In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.
摘要翻译：在金属基体上至少设有粘合剂层和吸附层的静电卡盘装置的修理方法中，用线状粘合剂卷绕被侵蚀的粘合剂层的侧面，此后进行热压缩。用于修复方法的静电卡盘装置的修理装置包括用于旋转静电卡盘装置的旋转工作台和用于将粘合剂供给到粘合剂层的筒管。

3. 发明授权

US08231759B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08231759B2
公开(公告)日：2012-07-31
申请号：US12783686
申请日：2010-05-20
申请人： Manabu Edamura , Go Miya , Ken Yoshioka
发明人： Manabu Edamura , Go Miya , Ken Yoshioka
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements.
摘要翻译：等离子体处理装置包括处理室，用于安装待加工物体的样品台，电源以及连接到电源的至少一个感应线圈。感应线圈通过以并联电路状布置连接至少两个相同的线圈元件而形成，使得当从样品台观察时，电流以相同的方向在多个相同的线圈元件中的每一个中流动。感应线圈被定位成使得其中心对应于物体的中心，并且线圈元件的输入端部以相等的角度间隔沿圆周方向移位，其通过将360°除以相同线圈元件的数量而计算。

4. 发明申请

US20120000774A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20120000774A1
公开(公告)日：2012-01-05
申请号：US13230214
申请日：2011-09-12
申请人： Ken YOSHIOKA , Yutaka OMOTO , Mamoru YAKUSHIJI , Tsunehiko TSUBONE , Kazunori NAKAMOTO
发明人： Ken YOSHIOKA , Yutaka OMOTO , Mamoru YAKUSHIJI , Tsunehiko TSUBONE , Kazunori NAKAMOTO
IPC分类号： C23C14/34
CPC分类号： H01L21/6831 , G05D23/1932 , G05D23/22 , H01L21/67109 , H01L21/67276
摘要： A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.
摘要翻译：一种等离子体处理装置，其特征在于，包括要被减压和排出的处理室，设置在处理室中并具有放置有待处理基板的样品放置面的样品放置电极，在处理室中产生等离子体的电磁产生装置向处理室供给处理气体的供给系统，在处理室内排出的真空排气系统，设置在样本设置电极上的加热器层和基底温度监视器，估计晶片的晶片温度估计单元来自基础温度监视器和等离子体形成电源的温度，以及根据来自温度估计单元的输出来调节加热器的控制器。

5. 发明申请

US20110297320A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110297320A1
公开(公告)日：2011-12-08
申请号：US12853427
申请日：2010-08-10
申请人： Yusaku Sakka , Ryoji Nishio , Ken Yoshioka
发明人： Yusaku Sakka , Ryoji Nishio , Ken Yoshioka
IPC分类号： H01L21/3065
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211 , H01J37/32651 , H05H2001/463
摘要： The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.
摘要翻译：本发明旨在抑制在真空处理室的内壁表面产生的自偏压，从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。本发明提供一种等离子体处理装置，其包括真空处理室，密封真空处理室的上部的真空处理室盖，感应天线，设置在感应天线和真空处理室盖之间的法拉第屏蔽，以及用于向感应天线提供高频电力的高频电源，其中感应天线被分成两部分或更多部分，法拉第屏蔽被分成对应于感应天线的分割数的分频数，高频电压是通过匹配盒从一个高频电源施加到其上。

6. 发明申请

US20100294432A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100294432A1
公开(公告)日：2010-11-25
申请号：US12850664
申请日：2010-08-05
申请人： Manabu EDAMURA , Ken YOSHIOKA , Takeshi SHIMADA
发明人： Manabu EDAMURA , Ken YOSHIOKA , Takeshi SHIMADA
IPC分类号： H01L21/44
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/321
摘要： A plasma processing apparatus, a processing chamber having one surface formed by a flat-plate-like insulating-material manufactured window, a sample mounting electrode having a sample mounting plane formed on a surface opposed to the insulating-material manufactured window, a gas-inlet for a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, an inductively coupled antenna formed outside OF the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber, a radio-frequency power supply, and an LC circuit. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined as a longitudinal direction, the direction extending perpendicular to the sample mounting plane.
摘要翻译：一种等离子体处理装置，具有由平板状绝缘材料制造的窗口形成的一个表面的处理室，具有形成在与绝缘材料制造窗口相对的表面上的样品安装面的样品安装电极，用于形成在绝缘材料制造窗口的外表面上的平板结构的电容耦合天线的入口，其具有以径向图案设置的狭缝，在绝缘材料制造的窗口外部形成的电感耦合天线，并且执行与通过窗口的等离子体，等离子体形成在处理室内，射频电源和LC电路。电感耦合天线由线圈构成，该线圈被定义为纵向的方向多次缠绕，该方向垂直于样品安装平面延伸。

7. 发明授权

US07740739B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07740739B2
公开(公告)日：2010-06-22
申请号：US11001059
申请日：2004-12-02
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.
摘要翻译：等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。由介电材料制成的基座覆盖样品台的外表面和外侧。相对于基座设置金属膜，向金属膜施加RF电压。

8. 发明申请

US20090317624A1 UNIFORMLY DISPERSED PHOTOCATALYST COATING LIQUID, METHOD FOR PRODUCING SAME, AND PHOTOCATALYTICALLY ACTIVE COMPOSITE MATERIAL OBTAINED BY USING SAME 审中-公开
标题翻译：均匀分散的光催化剂涂料液体，其制备方法和使用它获得的光催化活性复合材料
公开(公告)号：US20090317624A1
公开(公告)日：2009-12-24
申请号：US12280019
申请日：2007-02-19
申请人： Ken Yoshioka , Masutake Tamaoka , Toshitsura Cho , Ryuichi Ohyama , Tetsuya Okuda , Hisashi Fujii , Yoshihito Kamimoto , Yoshiyuki Fukazawa
发明人： Ken Yoshioka , Masutake Tamaoka , Toshitsura Cho , Ryuichi Ohyama , Tetsuya Okuda , Hisashi Fujii , Yoshihito Kamimoto , Yoshiyuki Fukazawa
IPC分类号： B32B5/16 , C08K3/22
CPC分类号： C09D183/04 , C08K3/08 , C08K3/22 , C09D5/14 , C09D5/1618 , C09D7/61 , C09D7/67 , Y10T428/256 , C08L2666/54
摘要： Disclosed is a uniformly-dispersed photocatalyst coating liquid having excellent dispersion stability of titanium oxide particles which have photocatalytic activity, which coating liquid places no burden on the environment while being excellent in handling properties. In addition, this uniformly-dispersed photocatalyst coating liquid enables to form a photocatalyst coating film, which is excellent in photocatalytic activities (antifouling property and/or antibacterial property), transparency and durability, on the surface of a base when applied thereto. Also disclosed are a method for producing such a uniformly-dispersed photocatalyst coating liquid, and a photocatalytically active composite material obtained by using such a uniformly-dispersed photocatalyst coating liquid. Specifically disclosed is a uniformly-dispersed photocatalyst coating liquid which is a composition containing, in an aqueous solvent, titanium oxide dispersed particles having an average primary particle diameter of 5-50 nm and an average dispersed particle diameter of 10-100 nm, a polymer dispersing agent, an alkoxysilane hydrolysis-polycondensation product, an organic amine, and additionally if necessary, silver particles. The uniformly-dispersed photocatalyst coating liquid has a pH within a range of 5-9. Also specifically disclosed are a method for producing such a uniformly-dispersed photocatalyst coating liquid, and a photocatalytically active composite material having antifouling property and antibacterial property, which is obtained by applying such a uniformly-dispersed photocatalyst coating liquid over the surface of a base.
摘要翻译：公开了具有优异的具有光催化活性的氧化钛颗粒的分散稳定性的均匀分散的光催化剂涂布液，该涂布液对处理性能优异的环境不造成负担。此外，该均匀分散的光催化剂涂布液能够形成在涂布于基材的表面上时光催化活性（防污性和/或抗菌性），透明性和耐久性优异的光催化剂涂膜。还公开了制造这种均匀分布的光催化剂涂布液的方法，以及使用这种均匀分散的光催化剂涂布液得到的光催化活性复合材料。具体公开的是均匀分散的光催化剂涂布液，其是在水性溶剂中含有平均一次粒径为5-50nm，平均分散粒径为10〜100nm的二氧化钛分散粒子的组合物，聚合物分散剂，烷氧基硅烷水解缩聚产物，有机胺，另外如果需要，可以使用银颗粒。均匀分散的光催化剂涂布液的pH在5-9的范围内。还具体公开了这样的均匀分散的光催化剂涂布液的制造方法和具有防污性和抗菌性的光催化活性复合材料，其通过在基材的表面上涂布均匀分布的光催化剂涂布液而获得。

9. 发明申请

US20090218316A1 MANUFACTURING METHOD IN PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备的制造方法
公开(公告)号：US20090218316A1
公开(公告)日：2009-09-03
申请号：US12038841
申请日：2008-02-28
申请人： Yutaka KOUZUMA , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
发明人： Yutaka KOUZUMA , Yutaka Ohmoto , Mamoru Yakushiji , Ken Yoshioka , Tsunehiko Tsubone
IPC分类号： C23F1/00
CPC分类号： H01L21/67103 , H01J2237/2001 , H01L21/67248
摘要： A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.
摘要翻译：一种制造方法包括以下步骤：将由电介质组成的膜放置在样品台的顶表面上，在由电介质制成的膜上形成膜状加热器，向加热器供电以检测温度分布，调节基于温度分布的检测结果使加热器的电阻值，使得温度分布具有预定值，然后在加热器上形成由电介质组成的膜。

10. 发明申请

US20090095423A1 APPARATUS AND METHOD FOR PLASMA ETCHING 审中-公开
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US20090095423A1
公开(公告)日：2009-04-16
申请号：US12330016
申请日：2008-12-08
申请人： Go MIYA , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
发明人： Go MIYA , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
IPC分类号： H01L21/3065
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma processing apparatus for performing plasma processing on an object to be processed, including: a processing chamber for performing plasma etching on an object to be processed; a first gas inlet provided at an upper portion of the processing chamber for supplying gas to a center portion in the processing chamber; a plurality of second gas inlets placed on an outer circumference of the first gas inlet for supplying gas to an outer circumference portion in the processing chamber; two lines of gas supply systems for supplying processing gases to the first gas inlet and the second gas inlets, respectively; an evacuation means for reducing the pressure in the processing chamber; an electrode on which the object to be processed is placed disposed in the processing chamber opposed to the first gas inlet and the second gas inlets; a high frequency power supply for generating plasma; and additional gas supply systems provided to the two lines of gas supply systems, respectively, for adding a gas for generating a depositional reaction product as additional gas via gas flow rate regulators at a given flow rate ratio.
摘要翻译：一种用于对待处理物体进行等离子体处理的等离子体处理装置，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体入口设置在处理室的上部，用于向处理室中的中心部分供应气体; 多个第二气体入口，其放置在所述第一气体入口的外周上，用于将气体供给到所述处理室中的外周部; 两条气体供应系统，用于分别向第一气体入口和第二气体入口供应处理气体; 用于减小处理室中的压力的抽空装置; 放置在与第一气体入口和第二气体入口相对的处理室中的待处理物体的电极; 用于产生等离子体的高频电源; 以及分别提供给两条气体供应系统的附加气体供应系统，用于通过气体流量调节器以给定的流速比添加用于产生作为附加气体的沉积反应产物的气体。

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