专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US12106929B2 Refillable ion chamber with automated purging system 有权
公开(公告)号：US12106929B2
公开(公告)日：2024-10-01
申请号：US18306381
申请日：2023-04-25
申请人： Varian Medical Systems, Inc.
发明人： Amir Shojaei , Philip Adamson , Flavio Poehlmann-Martins
IPC分类号： H01J37/08 , H01J37/16
CPC分类号： H01J37/08 , H01J37/16 , H01J2237/022 , H01J2237/166 , H01J2237/1825 , H01J2237/186
摘要： An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

2. 发明授权

US12080529B2 Plasma processing apparatus and prediction method of the condition of plasma processing apparatus 有权
公开(公告)号：US12080529B2
公开(公告)日：2024-09-03
申请号：US17108383
申请日：2020-12-01
申请人： Hitachi High-Tech Corporation
发明人： Yoshito Kamaji , Masahiro Sumiya
IPC分类号： H01J37/32 , G06F17/18 , G06N3/048 , G06N7/00 , G06N20/10 , H01J37/24 , G05B13/00 , G05B13/04 , H05H13/00
CPC分类号： H01J37/32926 , G06F17/18 , G06N3/048 , G06N7/00 , G06N20/10 , H01J37/24 , H01J37/32 , H01J37/32082 , H01J37/32192 , H01J37/32449 , H01J37/32972 , H01J37/3299 , G05B13/00 , G05B13/04 , H01J2237/1825 , H01J2237/334 , H01J2237/335 , H05H13/005
摘要： A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.

3. 发明公开

US20240212971A1 ELECTRON GUN CHAMBER FOR SCANNING ELECTRON MICROSCOPE, ELECTRON GUN CONTAINING SAME, AND SCANNING ELECTRON MICROSCOPE 审中-公开
公开(公告)号：US20240212971A1
公开(公告)日：2024-06-27
申请号：US17913815
申请日：2021-03-18
申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE , Terabase Inc.
发明人： Han ZHANG , Yasushi YAMAUCHI , Yoshihiro ARAI
IPC分类号： H01J37/18 , H01J37/073
CPC分类号： H01J37/18 , H01J37/073 , H01J2237/1825 , H01J2237/186 , H01J2237/188 , H01J2237/28
摘要： Provided is an electron gun chamber for a scanning electron microscope with (a) an electron source chamber; (b) an intermediate room; (c) an air lock valve installation part; (d) exhaust holes for a preliminary vacuum exhaust pump; and (e) an opening and closing means.

4. 发明公开

US20230298884A1 ULTRATHIN ATOMIC LAYER DEPOSITION FILM ACCURACY THICKNESS CONTROL 审中-公开
公开(公告)号：US20230298884A1
公开(公告)日：2023-09-21
申请号：US18188325
申请日：2023-03-22
申请人： Lam Research Corporation
发明人： Jun Qian , Hu Kang , Adrien LaVoie , Seiji Matsuyama , Purushottam Kumar
IPC分类号： H01L21/02 , H01J37/32 , C23C16/455 , C23C16/40
CPC分类号： H01L21/0228 , H01J37/32743 , H01J37/32449 , H01J37/32899 , H01L21/02164 , H01L21/02274 , C23C16/45542 , C23C16/401 , C23C16/45553 , H01J2237/332 , H01J2237/20278 , H01J2237/201 , H01J37/32834 , H01J2237/1825
摘要： Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

5. 发明公开

US20230230820A1 INTERMITTENT STAGNANT FLOW 审中-公开
公开(公告)号：US20230230820A1
公开(公告)日：2023-07-20
申请号：US18010990
申请日：2021-06-30
申请人： LAM RESEARCH CORPORATION
发明人： Douglas L. KEIL , Alice G. HOLLISTER , Karl Frederick LEESER
IPC分类号： H01J37/32 , C23C16/44 , C23C16/505 , C23C16/455
CPC分类号： H01J37/32862 , C23C16/505 , C23C16/4405 , C23C16/45536 , H01J37/32357 , H01J37/32449 , H01J37/32816 , H01J2237/186 , H01J2237/0225 , H01J2237/1825 , H01J2237/3321 , H01J2237/24578
摘要： A method for removing residue deposits from a reaction chamber includes supplying a cleaning gas into the reaction chamber via direct delivery from a remote plasma source (RPS). The cleaning gas forms a plurality of gas flow streamlines within the reaction chamber. Each of the streamlines originates at an injection point for receiving the cleaning gas and terminates at a chamber pump port coupled to a fore line for evacuating the cleaning gas. A flow characteristic of the cleaning gas is modified to redirect at least a portion of the gas flow streamlines to circulate in proximity to an inner perimeter of the reaction chamber to remove the residue deposits or to enhance the diffusion of cleaning species to surfaces to be cleaned. The inner perimeter is disposed along one or more vertical surfaces of the reaction chamber that are orthogonal to a horizontal surface including the injection point.

6. 发明授权

US11705252B2 Vacuum chamber arrangement for charged particle beam generator 有权
公开(公告)号：US11705252B2
公开(公告)日：2023-07-18
申请号：US17403849
申请日：2021-08-16
申请人： ASML Netherlands B.V.
发明人： Alexander Hendrik Vincent Van Veen , Willem Henk Urbanus , Marco Jan-Jaco Wieland
IPC分类号： H01J37/30 , G21K5/04 , G21K1/02 , H01J37/317 , H01J37/16 , H01J37/12
CPC分类号： G21K5/04 , G21K1/02 , H01J37/12 , H01J37/16 , H01J37/3007 , H01J37/3177 , H01J2237/002 , H01J2237/024 , H01J2237/0213 , H01J2237/0216 , H01J2237/0262 , H01J2237/032 , H01J2237/1207 , H01J2237/1215 , H01J2237/16 , H01J2237/1825 , H01J2237/30472
摘要： The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.

7. 发明授权

US10879054B2 Pump assembly for creating vacuum in wafer processing chamber 有权
公开(公告)号：US10879054B2
公开(公告)日：2020-12-29
申请号：US15964328
申请日：2018-04-27
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shian-Hung Su , Chen-Yung Wang , Jia-Ming Lee
IPC分类号： C23C16/40 , H01J37/32 , F04B37/14 , H01L21/67 , C23C16/44
CPC分类号： H01J37/32834 , C23C16/4412 , F04B37/14 , H01L21/67017 , H01L21/6719 , H01L21/67069 , H01L21/67098 , H01J2237/1825
摘要： A processing apparatus is provided. The processing apparatus includes a wafer processing chamber. The processing apparatus further includes a pump configured to evacuate the wafer processing chamber. The pump includes an inlet port located on a lower boundary plane. The processing apparatus also includes an exhaust conduit placed in fluid communication with the gas outlet of the wafer processing chamber and the inlet port of the pump. The exhaust conduit includes a sacrificial tube structure. The sacrificial tube structure is arranged in such a way that a projection of the sacrificial tube structure on the lower boundary plane overlaps the inlet port of the pump.

8. 发明授权

US09847213B2 Vacuum trap 有权
公开(公告)号：US09847213B2
公开(公告)日：2017-12-19
申请号：US14723703
申请日：2015-05-28
申请人： GLOBALFOUNDRIES INC.
发明人： Joseph K. Comeau , David R. Crawford , Robert E. Desrosiers , Tracy C. Hetrick , Mousa H. Ishaq
IPC分类号： H01J37/32 , C23C16/50 , C23C16/455 , C23F1/00 , F04F9/00
CPC分类号： H01J37/32633 , C23C16/45536 , C23C16/45587 , C23C16/45589 , C23C16/50 , C23F1/00 , F04F9/00 , H01J37/32834 , H01J2237/18 , H01J2237/1825
摘要： A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing.

9. 发明申请

US20170236686A1 ION BEAM IRRADIATION APPARATUS 审中-公开
公开(公告)号：US20170236686A1
公开(公告)日：2017-08-17
申请号：US15585562
申请日：2017-05-03
申请人： NISSIN ION EQUIPMENT CO., LTD.
发明人： Shinya HISADA , Kohei TANAKA , Shigehisa TAMURA , Makoto NAKAYA
IPC分类号： H01J37/20 , H01J37/18 , H01L21/67 , H01J37/317 , H01L21/687 , H01L21/677
CPC分类号： H01J37/20 , H01J37/18 , H01J37/3171 , H01J2237/022 , H01J2237/1825 , H01J2237/20207 , H01J2237/20228 , H01J2237/31705 , H01L21/67017 , H01L21/67742 , H01L21/68764 , H01L21/68785
摘要： An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

10. 发明授权

US09431208B2 Charged-particle beam drawing apparatus and vibration damping mechanism 有权
标题翻译：带电粒子束拉伸装置和减振机构
公开(公告)号：US09431208B2
公开(公告)日：2016-08-30
申请号：US14830919
申请日：2015-08-20
申请人： NUFLARE TECHNOLOGY, INC.
发明人： Shuichiro Fukutome
IPC分类号： H01J37/20 , F16F15/04 , H01J37/02 , H01J37/18 , H01J37/317
CPC分类号： H01J37/023 , H01J37/18 , H01J37/20 , H01J37/3174 , H01J2237/0216 , H01J2237/1825 , H01J2237/20278
摘要： A charged-particle beam drawing apparatus has an airtight first elastic tube that is provided on an outer surface of the vacuum chamber and communicates with an inner space of the vacuum chamber, a vibrator that is airtight and provided at an end of the first elastic tube at an opposite side to the vacuum chamber, and communicates with an inner space of the first elastic tube, a second elastic tube that is airtight and provided at an end of the vibrator at an opposite side to the first elastic tube and communicates with an inner space of the vibrator, a terminal closer that is provided at an end of the second elastic tube at an opposite side to the vibrator, and closes the end of the second elastic tube, and a gap holder to keep a gap between the outer surface of the vacuum chamber and the terminal member.
摘要翻译：带电粒子束拉伸装置具有气密的第一弹性管，其设置在真空室的外表面上并与真空室的内部空间连通，密封并设置在第一弹性管的端部的振动器在与真空室相反的一侧，与第一弹性管的内部空间连通，第二弹性管，其密封地设置在与第一弹性管相反的一侧的振动器的端部，并与内部振动器的空间，设置在与振动器相反侧的第二弹性管的端部处的端子接近，并且封闭第二弹性管的端部，以及间隙保持器，以在第二弹性管的外表面之间保持间隙真空室和端子构件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式