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    • 6. 发明授权
    • Plasma processing method and apparatus
    • 等离子体处理方法和装置
    • US08900401B2
    • 2014-12-02
    • US12846403
    • 2010-07-29
    • Eiji IkegamiShoji IkuharaTakeshi ShimadaKenichi KuwabaraTakao AraseTsuyoshi Matsumoto
    • Eiji IkegamiShoji IkuharaTakeshi ShimadaKenichi KuwabaraTakao AraseTsuyoshi Matsumoto
    • H01L21/306H01J37/32
    • H01J37/32963H01J37/32082H01J37/32091H01J37/321H01J37/3211H01J37/32192H01J37/32917H01J37/32926H01J37/32935H01J37/32981H01J37/3299H01J2237/1825H01J2237/327H01L21/67069H01L21/67242H05H1/46
    • Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
    • 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理,该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极,供给处理用气体供给装置 气体进入处理室,用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上,并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极,以在处理室内产生等离子体,其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料,直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时,确定调味品的结束。
    • 7. 发明授权
    • Plasma processing method and apparatus
    • 等离子体处理方法和装置
    • US08038896B2
    • 2011-10-18
    • US11502416
    • 2006-08-11
    • Eiji IkegamiShoji IkuharaTakeshi ShimadaKenichi KuwabaraTakao AraseTsuyoshi Matsumoto
    • Eiji IkegamiShoji IkuharaTakeshi ShimadaKenichi KuwabaraTakao AraseTsuyoshi Matsumoto
    • G01L21/30C23F1/00
    • H01J37/32963H01J37/32082H01J37/32091H01J37/321H01J37/3211H01J37/32192H01J37/32917H01J37/32926H01J37/32935H01J37/32981H01J37/3299H01J2237/1825H01J2237/327H01L21/67069H01L21/67242H05H1/46
    • Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
    • 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理,该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极,供给处理用气体供给装置 气体进入处理室,用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上,并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极,以在处理室内产生等离子体,其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料,直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时,确定调味品的结束。
    • 8. 发明授权
    • Method for manufacturing semiconductor devices
    • 制造半导体器件的方法
    • US07364956B2
    • 2008-04-29
    • US11209653
    • 2005-08-24
    • Go SaitoToshiaki NishidaTakahiro ShimomuraTakao Arase
    • Go SaitoToshiaki NishidaTakahiro ShimomuraTakao Arase
    • H01L21/336
    • H01L21/31122H01L21/28273H01L21/823437
    • A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.
    • 制造半导体器件的方法包括:蚀刻包括含有Al 2 O 3 3层和多晶硅或SiO 2 O 3的层间绝缘层的样品的步骤; 层,其使用等离子体蚀刻系统与层间绝缘层接触。 层间绝缘层用含有BCl 3,Ar和CH 4或He的气体混合物进行蚀刻。 气体混合物还含有Cl 2 O 2。 蚀刻层间绝缘层,使得对样品施加时间调制的高频偏置电压。 蚀刻层间绝缘层,使得样品保持在100℃至200℃的温度。层间绝缘层和多晶硅或SiO 2层分别在 不同的房间