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1. 发明授权

US06617255B2 Plasma processing method for working the surface of semiconductor devices 失效
标题翻译：用于加工半导体器件表面的等离子体处理方法
公开(公告)号：US06617255B2
公开(公告)日：2003-09-09
申请号：US09799485
申请日：2001-03-07
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.
摘要翻译：提供了一种等离子体处理方法，其处理具有氮化硅层的样品，其具有各向异性的高精度尺寸和对作为底层的氧化硅层的优异选择性。在等离子体蚀刻处理室中将不含氟的氯气与铝的混合气氛转化为等离子体，并且通过使用等离子体蚀刻具有氮化硅层的样品。

2. 发明申请

US20070281478A1 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20070281478A1
公开(公告)日：2007-12-06
申请号：US11502416
申请日：2006-08-11
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

3. 发明申请

US20100288195A1 PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100288195A1
公开(公告)日：2010-11-18
申请号：US12846403
申请日：2010-07-29
申请人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： C23C16/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

4. 发明授权

US07098138B2 Plasma processing method for working the surface of semiconductor devices 失效
公开(公告)号：US07098138B2
公开(公告)日：2006-08-29
申请号：US10404647
申请日：2003-04-02
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

5. 发明申请

US20060048892A1 Plasma processing method for working the surface of semiconductor devices 审中-公开
公开(公告)号：US20060048892A1
公开(公告)日：2006-03-09
申请号：US11253698
申请日：2005-10-20
申请人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
发明人： Takao Arase , Motohiko Yoshigai , Go Saito , Masamichi Sakaguchi , Hiroaki Ishimura , Takahiro Shimomura
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32697 , H01J2237/022 , H01J2237/3341 , H01L21/31116 , H01L21/67069 , H01L29/6656
摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

6. 发明授权

US08900401B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08900401B2
公开(公告)日：2014-12-02
申请号：US12846403
申请日：2010-07-29
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

7. 发明授权

US08038896B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08038896B2
公开(公告)日：2011-10-18
申请号：US11502416
申请日：2006-08-11
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

8. 发明授权

US07364956B2 Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07364956B2
公开(公告)日：2008-04-29
申请号：US11209653
申请日：2005-08-24
申请人： Go Saito , Toshiaki Nishida , Takahiro Shimomura , Takao Arase
发明人： Go Saito , Toshiaki Nishida , Takahiro Shimomura , Takao Arase
IPC分类号： H01L21/336
CPC分类号： H01L21/31122 , H01L21/28273 , H01L21/823437
摘要： A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.
摘要翻译：制造半导体器件的方法包括：蚀刻包括含有Al 2 O 3 3层和多晶硅或SiO 2 O 3的层间绝缘层的样品的步骤; 层，其使用等离子体蚀刻系统与层间绝缘层接触。层间绝缘层用含有BCl 3，Ar和CH 4或He的气体混合物进行蚀刻。气体混合物还含有Cl 2 O 2。蚀刻层间绝缘层，使得对样品施加时间调制的高频偏置电压。蚀刻层间绝缘层，使得样品保持在100℃至200℃的温度。层间绝缘层和多晶硅或SiO 2层分别在不同的房间

9. 发明申请

US20070026611A1 Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070026611A1
公开(公告)日：2007-02-01
申请号：US11209653
申请日：2005-08-24
申请人： Go Saito , Toshiaki Nishida , Takahiro Shimomura , Takao Arase
发明人： Go Saito , Toshiaki Nishida , Takahiro Shimomura , Takao Arase
IPC分类号： H01L21/336 , H01L21/302
CPC分类号： H01L21/31122 , H01L21/28273 , H01L21/823437
摘要： A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.
摘要翻译：制造半导体器件的方法包括：蚀刻包括含有Al 2 O 3 3层和多晶硅或SiO 2 O 3的层间绝缘层的样品的步骤; 层，其使用等离子体蚀刻系统与层间绝缘层接触。层间绝缘层用含有BCl 3，Ar和CH 4或He的气体混合物进行蚀刻。气体混合物还含有Cl 2 O 2。蚀刻层间绝缘层，使得对样本施加时间调制的高频偏置电压。蚀刻层间绝缘层，使得样品保持在100℃至200℃的温度。层间绝缘层和多晶硅或SiO 2层分别在不同的房间

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