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1. 发明授权

US4400622A Electron lens equipment 失效
标题翻译：电子透镜设备
公开(公告)号：US4400622A
公开(公告)日：1983-08-23
申请号：US225269
申请日：1981-01-15
申请人： Yoshinobu Takeuchi , Katsuhiro Kuroda , Susumu Ozasa
发明人： Yoshinobu Takeuchi , Katsuhiro Kuroda , Susumu Ozasa
IPC分类号： H01J37/141 , H01J37/21 , H01J37/305 , H01L21/027 , H01J3/20
CPC分类号： H01J37/141
摘要： An electron lens system wherein at least two coils are arranged in the vicinity of an electron-optical lens and are excited in directions opposite to each other, thereby making it possible to adjust the focal distance of the lens without including a rotation attributed to the electron-optical lens in an electron beam which passes through the lens.
摘要翻译：一种电子透镜系统，其中至少两个线圈布置在电子 - 光学透镜附近并且在彼此相反的方向上被激励，从而使得可以调节透镜的焦距而不包括归因于电子的旋转 - 透过透镜的电子束中的光学透镜。

2. 发明授权

US4396901A Method for correcting deflection distortion in an apparatus for charged particle lithography 失效
标题翻译：用于校正带电粒子光刻装置中的偏转变形的方法
公开(公告)号：US4396901A
公开(公告)日：1983-08-02
申请号：US227940
申请日：1981-01-23
申请人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
发明人： Norio Saitou , Susumu Ozasa , Katsuhiro Kuroda
IPC分类号： H01L21/027 , H01J37/304 , H01J29/70 , G06K7/10
CPC分类号： H01J37/304
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.
摘要翻译：在用于校正通过扫描样品上的图案的装置中产生的偏转失真的方法中，通过扫描带电粒子束而产生的偏转变形的校正根据待部分的高度（变形）基于在通过扫描带电粒子束在具有至少两个具有不等高度的参考水平的标记上获得的标记的各个参考水平处的偏转失真的校正幅度的样本（例如，晶片）上线性化沿光轴的方向。

3. 发明授权

US06172363B2 Method and apparatus for inspecting integrated circuit pattern 失效
公开(公告)号：US06172363B2
公开(公告)日：2001-01-09
申请号：US08811511
申请日：1997-03-04
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： H01J37244
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

4. 发明授权

US5866904A Scanning electron microscope and method for dimension measuring by using the same 失效
公开(公告)号：US5866904A
公开(公告)日：1999-02-02
申请号：US970201
申请日：1997-11-14
申请人： Hideo Todokoro , Kenji Takamoto , Tadashi Otaka , Fumio Mizuno , Satoru Yamada , Sadao Terakado , Katsuhiro Kuroda , Ken Ninomiya , Tokuo Kure
发明人： Hideo Todokoro , Kenji Takamoto , Tadashi Otaka , Fumio Mizuno , Satoru Yamada , Sadao Terakado , Katsuhiro Kuroda , Ken Ninomiya , Tokuo Kure
IPC分类号： G01Q30/02 , G01B15/00 , G01B15/04 , G01Q30/04 , H01J37/26
CPC分类号： G01B15/00 , G01B15/04 , H01J2237/2448 , H01J2237/24495 , H01J2237/281
摘要： An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.

5. 发明授权

US5490193A X-ray computed tomography system 失效
标题翻译： X线计算机断层扫描系统
公开(公告)号：US5490193A
公开(公告)日：1996-02-06
申请号：US734168
申请日：1991-07-22
申请人： Katsuhiro Kuroda , Koichi Koike , Atsuko Takafuji , Fumio Noda
发明人： Katsuhiro Kuroda , Koichi Koike , Atsuko Takafuji , Fumio Noda
IPC分类号： A61B6/03 , H01J35/30 , H05G1/70 , H05G1/60
CPC分类号： A61B6/032 , A61B6/4028 , H01J35/30 , H05G1/70
摘要： This invention provides a compact X-ray CT system capable of obtaining an X-ray CT image having high resolution at a high speed by deflecting a predetermined electron beam and causing the finely focused electron beam to scan on an arcuate anode target inside the same plane as the arcuate anode target for an X-ray source. The anode target for an X-ray source and a detector are disposed in the form of arcs inside substantially the same plane so as to face each other. The electron beam emitted from an electron gun is guided to a deflector through a lens system, is then deflected to a arc form trajectory by a uniform magnetic field generated by the deflector and is guided to the anode target after a reverse magnetic field is applied to the electron beam at a desired position. This electron beam is caused to scan on the anode target at a high speed so as to move the generation position of the X-ray and thus to obtain a sectional image.
摘要翻译：本发明提供一种紧凑的X射线CT系统，其能够通过偏转预定的电子束来获得高分辨率的X射线CT图像，并使精细聚焦的电子束在同一平面内的弓形阳极靶上扫描作为X射线源的弓形阳极靶。用于X射线源和检测器的阳极靶以大致相同的平面内的弧形的形式设置成彼此面对。从电子枪发射的电子束通过透镜系统被引导到偏转器，然后通过由偏转器产生的均匀磁场偏转到弧形轨迹，并且在反向磁场被施加到电子束在期望的位置。使该电子束以高速扫描阳极靶，以移动X射线的产生位置，从而获得截面图像。

6. 发明授权

US5481109A Surface analysis method and apparatus for carrying out the same 失效
标题翻译：表面分析方法及其执行装置
公开(公告)号：US5481109A
公开(公告)日：1996-01-02
申请号：US211575
申请日：1994-04-11
申请人： Ken Ninomiya , Hideo Todokoro , Tokuo Kure , Yasuhiro Mitsui , Katsuhiro Kuroda , Hiroyasu Shichi
发明人： Ken Ninomiya , Hideo Todokoro , Tokuo Kure , Yasuhiro Mitsui , Katsuhiro Kuroda , Hiroyasu Shichi
IPC分类号： G01N23/225 , H01J37/252 , G01N23/223
CPC分类号： G01N23/2252 , H01J37/252 , G01N2223/076 , H01J2237/24415
摘要： A surface analysis method and an apparatus for carrying out the samein which the method involves the detection of fluorescence X-rays emitted from the surface of a sample in response to a finely focused electron beam irradiated thereto, whereby residues on the sample surface are analyzed qualitatively and quantitatively. An electron beam (1) is irradiated through a hole (9) at the center of an X-ray detector (8) into a fine hole (h) on the surface of a sample (2). In response, fluorescence X-rays are emitted from inside the fine hole (h) and are detected by an annular X-ray detector (8) having an energy analysis function near the axis of the electron beam (1) (preferably within 20 degrees with respect to the center axis of the electron beam). This arrangement allows the fluorescence X-rays from the fine hole (h) to reach the X-ray detector (8) without being absorbed by the substance of the material. That in turn ensures qualitative and quantitative analysis of high accuracy about residues in fine holes of large aspect ratios. Since the method is of non-destructive nature, the analyzed sample may be placed unscathed back into the fabrication process.
摘要翻译： PCT No.PCT / JP93 / 01373 Sec。 371日期1994年04月11日 102（e）日期1994年4月11日PCT提交1993年9月27日PCT公布。出版物WO94 / 08232 日期1994年4月14日。表面分析方法及其实施方法涉及检测从样品表面发射的荧光X射线，其响应于照射到其上的精细聚焦的电子束，由此残留物对样品表面进行定性和定量分析。电子束（1）通过X射线检测器（8）的中心的孔（9）照射到样品（2）的表面上的细孔（h）中。作为响应，从细孔（h）内部发射荧光X射线，并且通过在电子束（1）的轴附近具有能量分析功能的环形X射线检测器（8）来检测（优选在20度以内）相对于电子束的中心轴）。这种布置允许来自细孔（h）的荧光X射线到达X射线检测器（8）而不被材料的物质吸收。这反过来又确保了对大长宽比的细孔中残留物的高精度的定性和定量分析。由于该方法具有非破坏性，所以分析的样品可以无损地放置在制造过程中。

7. 发明授权

US4893009A Scanning electron microscope and the like apparatus 失效
标题翻译：扫描电子显微镜等装置
公开(公告)号：US4893009A
公开(公告)日：1990-01-09
申请号：US310920
申请日：1989-02-16
申请人： Katsuhiro Kuroda
发明人： Katsuhiro Kuroda
IPC分类号： H01J37/248 , H01J37/244
CPC分类号： H01J37/244 , H01J2237/2443 , H01J2237/2445 , H01J2237/2448 , H01J2237/2449 , H01J2237/24507
摘要： In a scanning electron microscope, voltage applied to the secondary electron detector for detection of secondary electrons released from a specimen bombarded with a primary electron beam is automatically changed in compliance with the change of acceleration voltage for the primary electron beam to ensure that even when the primary electron beam acceleration voltage changes over a wide range, intensity of a permeant electric field in the primary electron beam path which is created by the secondary electron attraction voltage applied to the secondary electron detector can always be controlled automatically such that deflection of the primary electron beam effected by the permeant field is negligible or almost zeroed. Even in the event that the primary electron beam acceleration voltage changes greatly, the primary electron beam will not undergo unwanted deflection due to the permeant field and degradation in resolution of secondary electron images can be prevented.
摘要翻译：在扫描电子显微镜中，施加到用于检测从一次电子束轰击的样品释放的二次电子的二次电子检测器的电压根据一次电子束的加速电压的变化而自动变化，以确保即使当初级电子束加速电压在宽范围内变化，由二次电子吸引电压施加到二次电子检测器产生的一次电子束路径中的透过电场强度总是能够被自动控制，使得一次电子由透过场影响的光束可以忽略不计或几乎归零。即使在一次电子束加速电压发生很大变化的情况下，一次电子束也不会由于透过场而产生不希望的偏转，并且可以防止二次电子图像的分辨率降低。

8. 发明授权

US06979823B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06979823B2
公开(公告)日：2005-12-27
申请号：US10865850
申请日：2004-06-14
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66 , H01J37/244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

9. 发明授权

US06518548B2 Substrate temperature control system and method for controlling temperature of substrate 失效
公开(公告)号：US06518548B2
公开(公告)日：2003-02-11
申请号：US10084378
申请日：2002-02-28
申请人： Masakazu Sugaya , Fumio Murai , Yutaka Kaneko , Masafumi Kanetomo , Shigeki Hirasawa , Tomoji Watanabe , Tatuharu Yamamoto , Katsuhiro Kuroda
发明人： Masakazu Sugaya , Fumio Murai , Yutaka Kaneko , Masafumi Kanetomo , Shigeki Hirasawa , Tomoji Watanabe , Tatuharu Yamamoto , Katsuhiro Kuroda
IPC分类号： H05B368
CPC分类号： H01L21/67103 , H01L21/67248
摘要： So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

10. 发明授权

US6114695A Scanning electron microscope and method for dimension measuring by using the same 失效
标题翻译：扫描电子显微镜及其使用的尺寸测量方法
公开(公告)号：US6114695A
公开(公告)日：2000-09-05
申请号：US307789
申请日：1999-05-10
申请人： Hideo Todokoro , Kenji Takamoto , Tadashi Otaka , Fumio Mizuno , Satoru Yamada , Sadao Terakado , Katsuhiro Kuroda , Ken Ninomiya , Tokuo Kure
发明人： Hideo Todokoro , Kenji Takamoto , Tadashi Otaka , Fumio Mizuno , Satoru Yamada , Sadao Terakado , Katsuhiro Kuroda , Ken Ninomiya , Tokuo Kure
IPC分类号： G01Q30/02 , G01B15/00 , G01B15/04 , G01Q30/04 , H01J37/26
CPC分类号： G01B15/00 , G01B15/04 , H01J2237/2448 , H01J2237/24495 , H01J2237/281
摘要： An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.
摘要翻译：照射可以透过部分试样并且可以到达不暴露于电子束的部分的电子束，并且基于从照射电子束的部分二次产生的信号获得扫描图像。在扫描图像上设置尺寸测量开始点和终点，并测量它们之间的尺寸。假设立方模型，修改立方体模型以匹配扫描图像，并且基于修改的立方体模型进行尺寸测量。

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