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1. 发明授权

US08372299B2 Substrate treating apparatus and substrate treating method 有权
标题翻译：基板处理装置及基板处理方法
公开(公告)号：US08372299B2
公开(公告)日：2013-02-12
申请号：US12411266
申请日：2009-03-25
申请人： Yasunori Nakajima , Yusuke Mori
发明人： Yasunori Nakajima , Yusuke Mori
IPC分类号： C03C15/00
CPC分类号： B08B3/08 , B08B3/048
摘要： A method and apparatus for performing treatment of substrates with a treating liquid. A first storage unit stores an initial life count specifying an allowable number of treatments of substrates to be carried out with treating liquid after an entire liquid replacement with a new supply of the treating liquid; a second storage device stores a normal life count specifying an allowable number of treatments to be carried out with the treating liquid after reaching the initial life count and after a partial liquid replacement; and a control device repeats treatment of the substrates after the entire liquid replacement until the initial life count is reached; and after the initial life count has been reached and the partial liquid replacement has been made, repeats treatment of the substrates until the normal life count is reached, and makes the partial liquid replacement each succeeding time the normal life count is reached.
摘要翻译：一种用处理液进行基材处理的方法和装置。第一存储单元存储初始寿命数，其指定在处理液的新供应之后，在整个液体置换之后，用待处理液进行处理的基板的允许数量; 第二存储装置在达到初始寿命计数之后和在部分液体置换之后存储指定要用处理液进行的处理的允许数量的正常寿命计数; 并且控制装置在整个液体置换之后重复对基板的处理，直到达到初始寿命计数; 在达到初始寿命计数并进行部分液体置换之后，重复对基板的处理，直到达到正常寿命计数，并且在随后的时间达到正常寿命计数之后进行部分液体置换。

2. 发明授权

US08790929B2 Reagent for diluting blood sample and method for measuring mean corpuscular volume by using the same 有权
标题翻译：用于稀释血液样本的试剂和通过使用相同的方法测量平均红细胞体积
公开(公告)号：US08790929B2
公开(公告)日：2014-07-29
申请号：US12497952
申请日：2009-07-06
申请人： Yusuke Mori , Kinya Uchihashi , Yasuhiro Sakai
发明人： Yusuke Mori , Kinya Uchihashi , Yasuhiro Sakai
IPC分类号： G01N33/48
CPC分类号： G01N1/38 , G01N15/1209 , G01N2015/1236
摘要： The invention provides a reagent for diluting a blood sample, comprising water, polyoxyethylene alkyl ether having a hydroxyl value of 52 to 60, and an osmo-regulator for regulating the osmotic pressure of the reagent in the range of 150 to 400 mOsm/kg, as well as a method for measuring the mean corpuscular volume of a blood sample.
摘要翻译：本发明提供了一种用于稀释血液样品的试剂，包括水，羟值为52至60的聚氧乙烯烷基醚和用于调节试剂渗透压的渗透压调节剂，范围为150-400mOsm / kg，以及用于测量血液样品的平均红细胞体积的方法。

3. 发明授权

US08443017B2 Digital data processor 有权
标题翻译：数字数据处理器
公开(公告)号：US08443017B2
公开(公告)日：2013-05-14
申请号：US12758198
申请日：2010-04-12
申请人： Ryoji Suzuki , Yusuke Mori
发明人： Ryoji Suzuki , Yusuke Mori
IPC分类号： G06F7/00
CPC分类号： G11B20/10527 , G06F5/01 , G10L21/0364
摘要： A digital data processor which receives an N-bit input signal from a data source and converts the N-bit input signal into an M-bit output signal, the M-bit being larger than the N-bit. The digital data processor includes: an weighted addition circuit which is operable to perform weighted addition on at least the input signal and a signal being time-shifted with respect to the input signal and output as a weighted added input signal; an arithmetic shift circuit which is operable to perform an arithmetic rightward shift operation on the weighted added input signal for a predetermined number of shifts and output as a processed input signal; a bit extension circuit which is operable to attach a predetermined bits to an LSD side of the input signal to generate an intermediate signal of M bits; and an addition circuit which is operable to perform addition of the intermediate signal and the processed input signal so as to generate the M-bit output signal.
摘要翻译：数字数据处理器，其从数据源接收N位输入信号，并将N位输入信号转换成M位输出信号，M位大于N位。所述数字数据处理器包括：加权加法电路，其可操作以至少对所述输入信号执行加权相加，以及相对于所述输入信号进行时移的信号，并作为加权相加输入信号输出; 算术移位电路，其可操作以对所述加权的相加输入信号执行预定数量的移位并作为经处理的输入信号输出的算术右移移位操作; 一个扩展电路，用于将预定的比特附加到输入信号的LSD侧，以产生M比特的中间信号; 以及加法电路，其可操作以执行中间信号和经处理的输入信号的相加以便产生M位输出信号。

4. 发明授权

US08084281B2 Semiconductor substrate, electronic device, optical device, and production methods therefor 有权
标题翻译：半导体衬底，电子器件，光学器件及其制造方法
公开(公告)号：US08084281B2
公开(公告)日：2011-12-27
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/00
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

5. 发明授权

US07923229B2 Method of classifying and counting leukocytes 有权
标题翻译：白细胞分类和计数方法
公开(公告)号：US07923229B2
公开(公告)日：2011-04-12
申请号：US11926918
申请日：2007-10-29
申请人： Tomohiro Tsuji , Toshihiro Mizukami , Aya Konishi , Yusuke Mori , Yukie Nakazawa
发明人： Tomohiro Tsuji , Toshihiro Mizukami , Aya Konishi , Yusuke Mori , Yukie Nakazawa
IPC分类号： C12N13/00
CPC分类号： G01N33/52 , G01N2015/1477
摘要： A method for classifying and counting leukocytes, which comprises steps of: staining cells in a sample obtained from a hematological sample by treatment with a hemolytic agent, with a fluorescent dye; introducing the sample containing the stained cells into a flow cytometer to measure first scattered light, second scattered light different from the first scattered light and fluorescence of the respective cells; obtaining scattered light peak intensities and scattered light widths of the respective cells based on the measured first scattered light, obtaining scattered light intensities of the respective cells based on the measured second scattered light, and obtaining fluorescence intensities of the respective cells based on the measured fluorescence light; classifying the cells into a first group and a second group based on the scattered light peak intensities and the scattered light widths, the first group including leukocytes and second group including platelet clumps; classifying the leukocytes included in the first group into at least lymphocytes, monocytes and granulocytes based on the scattered light intensities and the fluorescence intensities; and counting the classified lymphocytes, the classified monocytes and the classified granulocytes.
摘要翻译：一种白细胞分类和计数方法，其特征在于包括以下步骤：用溶血剂用荧光染料染色从血液样品中获得的样品中的细胞; 将含有染色细胞的样品引入流式细胞仪中以测量第一散射光，与第一散射光不同的第二散射光和各细胞的荧光; 基于所测量的第一散射光获得各个单元的散射光峰强度和散射光宽度，基于测量的第二散射光获得各个单元的散射光强度，并且基于测量的荧光获得各个单元的荧光强度光; 基于散射光峰强度和散射光宽度将细胞分类为第一组和第二组，第一组包括白细胞和第二组包括血小板聚集; 基于散射光强度和荧光强度，将第一组中包含的白细胞分类为至少淋巴细胞，单核细胞和粒细胞; 并对分类的淋巴细胞，分类的单核细胞和分类的粒细胞进行计数。

6. 发明授权

US07794539B2 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby 失效
标题翻译：生产III族元素氮化物晶体的方法，其中使用的制造装置以及由此制造的半导体元件
公开(公告)号：US07794539B2
公开(公告)日：2010-09-14
申请号：US10599501
申请日：2005-03-31
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Yasuhito Takahashi
IPC分类号： C30B9/00 , C30B30/04 , C30B28/06 , C30B11/00
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.
摘要翻译：一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件被提供。该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。

7. 发明申请

US20090013924A1 PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL 有权
标题翻译：生产硝酸单晶的工艺和设备
公开(公告)号：US20090013924A1
公开(公告)日：2009-01-15
申请号：US12212722
申请日：2008-09-18
申请人： Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/02 , B01J3/04
CPC分类号： C30B9/00 , C30B29/403 , C30B35/00 , Y10T117/1096
摘要： A nitride single crystal is produced using a growth solution 7 containing an easily oxidizable material. A crucible 1 for storing the growth solution 7, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber 14, 15 disposed inside the pressure vessel and outside the crucible 1 are used to grow the nitride single crystal.
摘要翻译：使用含有容易氧化的材料的生长溶液7制造氮化物单晶。用于储存生长溶液7的坩埚1，用于储存坩埚的压力容器和至少含有氮气的装置以及设置在压力容器内部和坩埚外部的氧吸收器14,15用于使氮化物单体水晶。

8. 发明申请

US20080290778A1 Fluorescent Lamp, Back Light Unit, And Method Of Manufacturing The Fluorescent Lamp 审中-公开
标题翻译：荧光灯，背光灯和荧光灯制造方法
公开(公告)号：US20080290778A1
公开(公告)日：2008-11-27
申请号：US11628915
申请日：2005-05-30
申请人： Hirofumi Yamashita , Nozomu Hashimoto , Yusuke Mori , Hisashi Dejima , Tatsuo Maeda
发明人： Hirofumi Yamashita , Nozomu Hashimoto , Yusuke Mori , Hisashi Dejima , Tatsuo Maeda
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： H01J61/305 , H01J61/16 , H01J61/26 , H01J61/325 , H01J61/72 , H01J65/046
摘要： A fluorescent lamp including a curved glass bulb that has a layer including a phosphor layer on an inner surface, mercury and a rare gas enclosed inside, and a pair of electrodes at both ends, and when a tube inner diameter (mm) of the glass bulb is plotted on a horizontal axis of an orthogonal coordinate system and a total amount of CO2 and CO (mol %) contained in gas present inside the glass bulb is plotted on a vertical axis of the orthogonal coordinate system, the tube inner diameter and the total amount of CO2 and CO are in a predetermined area or on a boundary thereof, the predetermined area being bounded by line segments AB, BC, CD, and DA that connect a point A (1.5 mm, 0.008 mol %), a point B (4.0 mm, 0.0005 mol %), a point C (4.0 mm, 0 mol %), and a point D (1.5 mm, 0 mol %) in the stated order. As a result, a fluorescent lamp that has no illumination failure caused by snaking can be obtained even though the fluorescent lamp is in a curved shape.
摘要翻译：一种荧光灯，其包括具有内表面上的荧光体层，汞和封闭内部的稀有气体的层的弯曲玻璃灯泡和两端的一对电极，并且当玻璃的管内径（mm）将灯泡绘制在正交坐标系的水平轴上，并且将包含在玻璃灯泡内的气体中的CO 2和CO（mol％）的总量绘制在正交坐标系的垂直轴上，管内径和 CO 2和CO的总量位于预定区域或其边界上，该预定区域由连接点A（1.5mm，0.008mol％），点B（B，B）的线段AB，BC，CD和DA （4.0mm，0.0005mol％），点C（4.0mm，0mol％）和点D（1.5mm，0mol％）。结果，即使荧光灯处于弯曲形状，也可以获得没有由蛇形引起的照明故障的荧光灯。

9. 发明申请

US20080283968A1 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 有权
标题翻译： III-氮化物半导体晶体及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20080283968A1
公开(公告)日：2008-11-20
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： H01L29/20 , C03B9/00
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

10. 发明申请

US20080213158A1 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
标题翻译：用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法
公开(公告)号：US20080213158A1
公开(公告)日：2008-09-04
申请号：US12082745
申请日：2008-04-14
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B23/00 , C01B21/06
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.
摘要翻译：提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。例如，使用本发明的装置如下生长晶体。将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部反应堆容器。由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以被阻止此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。结果，可以提高获得的III族氮化物晶体的质量。

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