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1. 发明授权

US08231726B2 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate 有权
标题翻译：半导体发光元件，III族氮化物半导体衬底及其制造方法
公开(公告)号：US08231726B2
公开(公告)日：2012-07-31
申请号：US12161393
申请日：2007-01-19
申请人： Hisashi Minemoto , Yasuo Kitaoka , Yasutoshi Kawaguchi , Yasuhito Takahashi , Yoshiaki Hasegawa
发明人： Hisashi Minemoto , Yasuo Kitaoka , Yasutoshi Kawaguchi , Yasuhito Takahashi , Yoshiaki Hasegawa
IPC分类号： H01L33/30 , C30B19/02 , C30B19/04
CPC分类号： H01S5/32341 , C30B19/02 , C30B29/403 , C30B29/406 , H01L33/0075 , H01L33/025 , H01L33/32 , H01S5/0206 , H01S5/22 , H01S5/305
摘要： An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm−3. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.
摘要翻译：本发明的目的是为了获得使用III族氮化物半导体衬底的半导体发光元件，通过选择特定的衬底掺杂剂并控制其浓度来获得具有优异的光提取性能的半导体发光元件。半导体发光元件包括由包含锗（Ge）作为掺杂剂的III族氮化物半导体构成的衬底，由形成在衬底上的III族氮化物半导体构成的n型半导体层，由组形成在n型半导体层上的III族氮化物半导体以及形成在有源层上形成的III族氮化物半导体的p型半导体层，其中基板的锗（Ge）浓度为2×1017〜2×1019 cm-3。使用包含至少III族元素，碱金属或碱土金属和锗（Ge）和氮的熔体在含氮气氛中生产基材。

2. 发明授权

US07435295B2 Method for producing compound single crystal and production apparatus for use therein 有权
标题翻译：复合单晶的制造方法及其制造装置
公开(公告)号：US07435295B2
公开(公告)日：2008-10-14
申请号：US10598095
申请日：2005-02-18
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B25/12
CPC分类号： C30B29/406 , C30B9/10 , C30B19/02 , C30B19/063 , C30B19/064 , Y10T117/1016
摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.
摘要翻译：本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

3. 发明申请

US20080037100A1 Acoustooptic Device and Optical Imaging Apparatus Using the Same 有权
标题翻译：声光装置及使用其的光学成像装置
公开(公告)号：US20080037100A1
公开(公告)日：2008-02-14
申请号：US11571218
申请日：2005-06-29
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Takayuki Negami , Yasuhito Takahashi , Toshimi Nishiyama , Kimihiko Shibuya
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Takayuki Negami , Yasuhito Takahashi , Toshimi Nishiyama , Kimihiko Shibuya
IPC分类号： G02F1/33
CPC分类号： G02F1/0072
摘要： The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.
摘要翻译：本发明提供即使在紫外线区域中的光也可以使用，没有激光损伤和光学损伤以及良好的声光性能的光学装置和使用该光学装置的光学成像装置。根据本发明的声光装置包括高频信号输入部分（65），换能器部分（64）和声光介质（6）。从高频信号输入部（65）输入的高频信号由换能器部（64）转换为机械振动，声光介质（6）的光学特性根据机械振动而变化。声光介质由III族氮化物晶体形成。根据本发明的光学成像装置包括光源，声光装置，驱动电路和图像平面。来自光源的光根据来自驱动电路的信号被声光装置衍射，并且所得到的衍射光在图像平面上形成图像。声光装置的声光介质由III族氮化物晶体形成。

4. 发明申请

US20070215035A1 Method for Producing Compound Single Crystal and Production Apparatus for Use Therein 有权
标题翻译：生产复合单晶的方法及其使用的生产设备
公开(公告)号：US20070215035A1
公开(公告)日：2007-09-20
申请号：US10598095
申请日：2005-02-18
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kwamura
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kwamura
IPC分类号： C30B25/00
CPC分类号： C30B29/406 , C30B9/10 , C30B19/02 , C30B19/063 , C30B19/064 , Y10T117/1016
摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.
摘要翻译：本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

5. 发明授权

US06935124B2 Clear ice making apparatus, clear ice making method and refrigerator 失效
标题翻译：清除制冰装置，制冰方法和冰箱
公开(公告)号：US06935124B2
公开(公告)日：2005-08-30
申请号：US10447878
申请日：2003-05-29
申请人： Yasuhito Takahashi , Katutosi Tusima , Takumi Kida , Yuko Ishii , Hiroshi Tatsui , Kazuyuki Hamada
发明人： Yasuhito Takahashi , Katutosi Tusima , Takumi Kida , Yuko Ishii , Hiroshi Tatsui , Kazuyuki Hamada
IPC分类号： F25C1/04 , F25C1/18 , F25C5/08 , F25C1/12
CPC分类号： F25C5/08 , F25C1/04 , F25C1/18 , F25C2305/022 , F25C2400/10 , F25C2400/14 , F25C2600/04
摘要： A clear ice making apparatus includes: a freezing space; a tray placed in the freezing space and having a lower temperature at a bottom part thereof than at an upper part thereof; and a water supply unit of supplying water to the tray from the top thereof, in which ice is made at an ice making rate of 5 μm/s or lower, a part of a liquid-phase section of water in the tray which part is in contact with atmosphere is frozen to complete the ice making, the liquid-phase section of water is not entirely supercooled before the ice making is completed, and the concentration of air in the liquid-phase section of water in the tray is equal to or lower than an excessive concentration of air.
摘要翻译：一个明确的制冰装置包括：一个冷冻空间; 放置在冷冻空间中并且在其底部具有比在其上部具有较低温度的托盘; 以及供水单元，其从其顶部向冰盘供水，其中制冰量为5mum / s或更低的制冰速率，所述托盘中的水的液相部分的一部分为在与大气接触的情况下被冷冻以完成制冰，在制冰完成之前，水的液相部分不完全过冷，并且托盘中的水的液相部分中的空气浓度等于或等于低于过高的空气浓度。

6. 发明授权

US06869665B2 Wiring board with core layer containing inorganic filler 有权
标题翻译：接线板，芯层含有无机填料
公开(公告)号：US06869665B2
公开(公告)日：2005-03-22
申请号：US10644004
申请日：2003-08-20
申请人： Motoaki Tani , Nobuyuki Hayashi , Tomoyuki Abe , Yasuhito Takahashi , Yoshiyasu Saeki
发明人： Motoaki Tani , Nobuyuki Hayashi , Tomoyuki Abe , Yasuhito Takahashi , Yoshiyasu Saeki
IPC分类号： H05K1/11 , H01L23/12 , H01L23/14 , H05K1/03 , H05K1/05 , H05K3/46 , B32B3/00
CPC分类号： H05K1/056 , H05K3/4608 , H05K2201/0209 , H05K2201/0281 , H05K2201/0323 , H05K2201/068 , Y10S428/901 , Y10T428/24917
摘要： A wiring board includes a core layer and a pair of multilayer wiring portions. The core layer, having an upper surface and a lower surface, is formed from a resin composite which contains resin filler and encloses several pieces of carbon fiber cloth. One of the multilayer wiring portions is stacked on the upper surface of the core layer, while the other is stacked on the lower surface of the core layer. Each multilayer wiring portion is composed of a number of insulating layers and wiring patterns stacked alternately with the insulating layers. The wiring patterns of the upper and the lower wiring portions are connected to each other by conductors extending through the entire thickness of the core layer.
摘要翻译：布线板包括芯层和一对多层布线部。具有上表面和下表面的芯层由包含树脂填料的树脂复合材料形成，并包围几片碳纤维布。多层布线部分中的一个堆叠在芯层的上表面上，而另一个层叠在芯层的下表面上。每个多层布线部分由与绝缘层交替堆叠的多个绝缘层和布线图形组成。上布线部分和下布线部分的布线图案通过延伸穿过芯层整个厚度的导体彼此连接。

7. 发明授权

US06428942B1 Multilayer circuit structure build up method 失效
标题翻译：多层电路结构建立方法
公开(公告)号：US06428942B1
公开(公告)日：2002-08-06
申请号：US09429854
申请日：1999-10-28
申请人： Hunt Hang Jiang , Yasuhito Takahashi , Michael Guang-Tzong Lee , Wen-chou Vincent Wang , Mark McCormack
发明人： Hunt Hang Jiang , Yasuhito Takahashi , Michael Guang-Tzong Lee , Wen-chou Vincent Wang , Mark McCormack
IPC分类号： G03F700
CPC分类号： H01L24/96 , H01L21/486 , H01L2221/68359 , H01L2224/16237 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/12042 , H01L2924/3011 , H05K3/0035 , H05K3/108 , H05K3/243 , H05K3/4602 , H05K3/4647 , H05K2203/066 , H05K2203/0733 , H05K2203/1383 , H01L2924/00
摘要： Methods for forming multilayer circuit structures are disclosed. In some embodiments, conductive layers, dielectric layers and conductive posts can be formed on both sides of a circuitized core structure. The conductive posts are disposed in the dielectric layers and can be stacked to form a generally vertical conduction pathway which passes at least partially through a multilayer circuit structure. The formed multilayer circuit structures can occupy less space than corresponding multilayer circuit structures with stacked via structures.
摘要翻译：公开了形成多层电路结构的方法。在一些实施例中，可以在电路化芯结构的两侧上形成导电层，电介质层和导电柱。导电柱设置在电介质层中并且可以被堆叠以形成通常至少部分穿过多层电路结构的大致垂直的传导路径。形成的多层电路结构可以占据比具有堆叠通孔结构的相应多层电路结构更小的空间。

8. 发明授权

US06281040B1 Methods for making circuit substrates and electrical assemblies 有权
标题翻译：制造电路基板和电气组件的方法
公开(公告)号：US06281040B1
公开(公告)日：2001-08-28
申请号：US09397614
申请日：1999-09-16
申请人： Mark Thomas McCormack , Hunt Hang Jiang , Solomon I. Beilin , Albert Wong Chan , Yasuhito Takahashi
发明人： Mark Thomas McCormack , Hunt Hang Jiang , Solomon I. Beilin , Albert Wong Chan , Yasuhito Takahashi
IPC分类号： H01L2144
CPC分类号： H05K3/363 , H01L23/49883 , H01L2224/16503 , H05K3/321 , H05K3/4069 , H05K3/4614 , H05K3/4617 , H05K3/462 , H05K3/4623 , H05K2201/09536 , H05K2201/096 , H05K2201/09827 , H05K2201/10666 , H05K2203/0425 , H05K2203/0455
摘要： Methods for making circuit substrates and electrical assemblies are disclosed. A conductive composition is disposed between confronting conductive regions and can be cured to form a via structure. The conductive composition includes conductive particles and a carrier. The carrier can include a fluxing agent and an epoxy-functional resin having a viscosity of less than about 1000 centipoise at 25° C.
摘要翻译：公开了制造电路基板和电气组件的方法。导电组合物设置在相对的导电区域之间，并且可以被固化以形成通孔结构。导电组合物包括导电颗粒和载体。载体可以包括助熔剂和在25℃下粘度小于约1000厘泊的环氧官能树脂。

9. 发明授权

US06168972A Flip chip pre-assembly underfill process 失效
标题翻译：倒装芯片预组装底部填充工艺
公开(公告)号：US06168972A
公开(公告)日：2001-01-02
申请号：US09218781
申请日：1998-12-22
申请人： Wen-chou Vincent Wang , Michael G. Peters , Dashun S. Zhou , Yasuhito Takahashi
发明人： Wen-chou Vincent Wang , Michael G. Peters , Dashun S. Zhou , Yasuhito Takahashi
IPC分类号： H01L2148
CPC分类号： H01L24/94 , H01L21/563 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/29 , H01L2224/06102 , H01L2224/11334 , H01L2224/131 , H01L2224/16 , H01L2224/274 , H01L2224/73203 , H01L2224/73204 , H01L2224/83102 , H01L2224/83191 , H01L2224/83192 , H01L2224/83856 , H01L2224/92125 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/15787 , H01L2924/351 , H01L2224/13099 , H01L2224/29099 , H01L2924/00
摘要： An encapsulation process for flip-chip bonding chips to a substrate encapsulates solder balls on the chip in a separate encapsulation process in which the chip is coated with encapsulation layer and then a portion of the encapsulation layer is removed to expose a portion of the solder balls.
摘要翻译：用于将衬底倒装芯片接合到衬底的封装工艺在单独的封装工艺中封装芯片上的焊球，其中芯片被封装层涂覆，然后去除一部分封装层以暴露焊料球的一部分。

10. 发明授权

US5499260A Semiconductor laser and a method for fabricating the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5499260A
公开(公告)日：1996-03-12
申请号：US282919
申请日：1994-07-29
申请人： Yasuhito Takahashi , Ayumu Tsujimura
发明人： Yasuhito Takahashi , Ayumu Tsujimura
IPC分类号： H01L33/10 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/327 , H01S3/18
CPC分类号： H01S5/327 , H01S5/22 , H01S2304/04 , H01S5/2214 , H01S5/2227 , H01S5/2231
摘要： An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are successively formed on an n-GaAs substrate. Then, grooves and a ridge are formed in the respective p-type layers by etching. A current blocking layer formed by laminating SiO.sub.2 layers and TiO.sub.2 layers in multiple layers is formed so as to bury the grooves. On the top surface of the ridge where the current blocking layer is not formed, an upper electrode is formed. On the bottom surface of the n-GaAs substrate, a lower electrode is formed, and thus the ridge type semiconductor laser is fabricated. This semiconductor laser is capable of emitting blue light with an oscillating wavelength of around 500 nm. The current blocking layer of the lamination of the SiO.sub.2 and TiO.sub.2 layers allows effective confinement of both light and carriers and a drastic decrease in the threshold current for a laser oscillation.
摘要翻译：在n-ZnMgSSe下包层，n-ZnSSe导光层，未掺杂的CdZnSe有源层，p-ZnSSe导光层，p-ZnMgSSe上包层和p-ZnSe覆盖层上依次形成 n-GaAs衬底。然后，通过蚀刻在各个p型层中形成沟槽和脊。形成通过层叠多层SiO 2层和TiO 2层而形成的电流阻挡层，以便掩埋沟槽。在没有形成电流阻挡层的脊的顶表面上形成上电极。在n-GaAs衬底的底表面上形成下电极，由此制造脊型半导体激光器。该半导体激光器能够发射具有约500nm的振荡波长的蓝光。 SiO 2和TiO 2层的层压的电流阻挡层允许光和载流子的有效约束，并且激光振荡的阈值电流急剧下降。

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