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1. 发明授权

US08227324B2 Method for producing group III nitride-based compound semiconductor crystal 有权
标题翻译：制备III族氮化物基化合物半导体晶体的方法
公开(公告)号：US08227324B2
公开(公告)日：2012-07-24
申请号：US12448207
申请日：2007-12-10
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/20
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.
摘要翻译：在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解在助焊剂混合物中。

2. 发明授权

US08216365B2 Method for producing a semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US08216365B2
公开(公告)日：2012-07-10
申请号：US12073178
申请日：2008-02-29
申请人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B25/18
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.
摘要翻译：本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐在x轴方向。因此，在m平面上存在支撑工具与晶种接触的三个接触点。支撑工具具有在垂直方向上延伸的两个支撑构件。一个支撑构件具有相对于水平面α倾斜30°的端部。在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

3. 发明授权

US07708833B2 Crystal growing apparatus 有权
标题翻译：水晶生长装置
公开(公告)号：US07708833B2
公开(公告)日：2010-05-04
申请号：US12073904
申请日：2008-03-11
申请人： Shiro Yamazaki , Koji Hirata , Takayuki Sato , Seiji Nagai , Katsuhiro Imai , Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Koji Hirata , Takayuki Sato , Seiji Nagai , Katsuhiro Imai , Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B35/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.
摘要翻译：本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置用于控制填充其内部空间的氩（Ar）气体的状态。因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na），和管道。

4. 发明申请

US20090173273A1 Method and Apparatus for Producing Group III Nitride Based Compound Semiconductor 有权
标题翻译：用于生产基于III族氮化物的化合物半导体的方法和装置
公开(公告)号：US20090173273A1
公开(公告)日：2009-07-09
申请号：US12225550
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/00 , C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。本发明的装置用于制造III族氮化物基化合物半导体该装置包括：在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器和加热装置的外部容器，以及用于将从外部容器的外部至少含有氮气的气体进料到反应器中的进料管。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

5. 发明申请

US20090106959A1 Group III nitride semiconductor manufacturing system 有权
标题翻译： III族氮化物半导体制造系统
公开(公告)号：US20090106959A1
公开(公告)日：2009-04-30
申请号：US12289257
申请日：2008-10-23
申请人： Shiro Yamazaki , Koji Hirata
发明人： Shiro Yamazaki , Koji Hirata
IPC分类号： H01L21/67
CPC分类号： C30B29/403 , C30B9/10 , Y10T29/41 , Y10T117/10
摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.
摘要翻译：本发明提供一种不影响旋转轴旋转的III族氮化物半导体制造系统。 III族氮化物半导体制造系统具有开口的反应容器，设置在反应容器的内部并含有至少具有III族金属和碱金属的熔融物的坩埚，支撑坩埚的保持单元，旋转轴通过开口从反应容器的内部延伸到反应容器的外部;旋转轴盖，其覆盖位于反应容器外部并连接到开口处的反应容器的旋转轴的一部分，旋转驱动单元，设置在所述反应容器的外部并调节所述旋转轴;以及供给管，其连接到所述旋转轴盖，并且将至少包含氮的气体供应到所述旋转轴和所述旋转轴盖之间的间隙中，其中，气体和熔体反应以生长III族氮化物半导体晶体。

6. 发明申请

US20070101931A1 Method for producing semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US20070101931A1
公开(公告)日：2007-05-10
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译：本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。待生长半导体晶体的基板的至少一部分由助熔剂材料形成。半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。助熔剂材料由硅形成。或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

7. 发明申请

US20060273324A1 Light-emitting diode and process for producing the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060273324A1
公开(公告)日：2006-12-07
申请号：US10566211
申请日：2004-07-26
申请人： Makoto Asai , Shiro Yamazaki , Takahiro Kozawa , Mitsuhisa Narukawa
发明人： Makoto Asai , Shiro Yamazaki , Takahiro Kozawa , Mitsuhisa Narukawa
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , H01L24/32 , H01L33/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/73265 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.
摘要翻译：半导体晶体基板102的背面，其厚度为约150μm，由未掺杂的GaN体晶体制成，其由经干蚀刻而平坦化的抛光平面102a和形成在其中的研磨平面102b 锥形，并通过干蚀刻变平。在GaN n型覆层（低载流子浓度层）104的厚度约为10nm的情况下，厚度为约0.01nm的Al 0.005 In 0.95 Ga 0.95 N阱层51和厚度约为18nm的Al 0.12 N Ga 0.88 N阻挡层52交替地沉积为发射紫外光的有源层105和总共有5层MQW结构。在半导体衬底a的抛光平面上形成负电极（n电极c）之前，对该抛光平面进行干式蚀刻。

8. 发明授权

US07052979B2 Production method for semiconductor crystal and semiconductor luminous element 有权
标题翻译：半导体晶体和半导体发光元件的制造方法
公开(公告)号：US07052979B2
公开(公告)日：2006-05-30
申请号：US10467566
申请日：2002-02-12
申请人： Seiji Nagai , Kazuyoshi Tomita , Shiro Yamazaki , Yuta Tezen , Toshio Hiramatsu
发明人： Seiji Nagai , Kazuyoshi Tomita , Shiro Yamazaki , Yuta Tezen , Toshio Hiramatsu
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0066 , H01L33/007
摘要： When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as the size of each projection part, arranging interval between each projection part and crystal growth. So when the thickness of the substrate layer is sufficiently larger compared with the height of the projection part, inner stress or outer stress become easier to act intensively to the projection part. As a result, such stress especially functions as shearing stress toward the projection part. When the shearing stress becomes larger, the projection part is ruptured. So utilizing the shearing stress enables to separate the base substrate and the substrate layer easily. The larger the cavities are formed, the more stress tends to concentrate to the projection parts, to thereby enable to separate the base substrate and the substrate layer more securely.
摘要翻译：当在包括大量投影部分的基底基板上生长由III族氮化物化合物制成的衬底层（期望的半导体晶体）时，可以在每个突出部分之间形成其中不沉积半导体晶体的空腔，尽管它取决于条件如每个投影部分的尺寸，每个投影部分之间的间隔和晶体生长。因此，当基板层的厚度与突出部分的高度相比足够大时，内应力或外应力变得更容易集中于投影部分。结果，这种应力特别地作用于朝向投影部分的剪切应力。当剪切应力变大时，突出部分破裂。因此，利用剪切应力使得能够容易地分离基底和基底层。形成空穴越大，应力越倾向于集中到突出部分，从而能够更牢固地分离基底基底和基底层。

9. 发明授权

US06984536B2 Method for manufacturing a gallium nitride group compound semiconductor 失效
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US06984536B2
公开(公告)日：2006-01-10
申请号：US10052347
申请日：2002-01-23
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L21/20
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

10. 发明授权

US5862167A Light-emitting semiconductor device using gallium nitride compound 失效
标题翻译：使用氮化镓化合物的发光半导体器件
公开(公告)号：US5862167A
公开(公告)日：1999-01-19
申请号：US863397
申请日：1997-05-27
申请人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
发明人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/10 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/46 , H01S5/183 , H01S5/323 , H01S3/19
CPC分类号： H01L33/105 , H01L33/32 , H01S5/18375 , H01L33/405 , H01L33/465 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
摘要翻译：提供一种发光二极管或激光二极管，其使用满足式（Al x Ga 1-x）y In 1-y N的III族氮化物化合物半导体，包括0≤x≤1，0≤y< = 1。提供了一种双异质结结构，其在活性层之间具有更宽带隙的层之间夹持有源层。二极管具有多层结构，其具有反射发射光的反射层或反射抑制层。二极管的发射光在垂直于双异质结结构的方向上离开二极管。在与光出口相反的方向上发射的光被反射膜反射到光出口的方向。此外，设置在光出口处或附近的反射抑制膜通过最小化或防止反射来帮助释放出射光。结果，光可以被发光二极管有效地发射。

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