专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06992318B2 Semiconductor device having superlattice semiconductor layer and method of manufacturing the same 有权
标题翻译：具有超晶格半导体层的半导体器件及其制造方法
公开(公告)号：US06992318B2
公开(公告)日：2006-01-31
申请号：US10877982
申请日：2004-06-29
申请人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
发明人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
IPC分类号： H01L33/00 , H01L31/0304
CPC分类号： H01L33/04 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/06 , H01L33/32 , H01S2301/173
摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.
摘要翻译：提供了具有超晶格半导体层的半导体器件及其制造方法。半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。所提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

2. 发明申请

US20050029506A1 Semiconductor device having superlattice semiconductor layer and method of manufacturing the same 有权
标题翻译：具有超晶格半导体层的半导体器件及其制造方法
公开(公告)号：US20050029506A1
公开(公告)日：2005-02-10
申请号：US10877982
申请日：2004-06-29
申请人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
发明人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
IPC分类号： H01S5/343 , B82Y20/00 , H01L29/15 , H01L29/20 , H01S3/0941 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01L33/00 , H01L29/06
CPC分类号： H01L33/04 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/06 , H01L33/32 , H01S2301/173
摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.
摘要翻译：提供了具有超晶格半导体层的半导体器件及其制造方法。半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。所提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

3. 发明申请

US20050180475A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20050180475A1
公开(公告)日：2005-08-18
申请号：US11061541
申请日：2005-02-18
申请人： Kyoung-ho Ha , Joon-seop Kwak , Sung-nam Lee , Jung-hye Chae
发明人： Kyoung-ho Ha , Joon-seop Kwak , Sung-nam Lee , Jung-hye Chae
IPC分类号： H01S5/20 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323
CPC分类号： H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3211 , H01S5/3214 , H01S5/32341 , H01S2301/173
摘要： The provided semiconductor laser device includes a substrate, an active layer, a first cladding layer located between the active layer and the substrate, a second cladding layer located on the active layer, and a first electrode layer including a metal waveguide layer, which is formed of a metal having a smaller refractive index than the second cladding layer, and formed on the second cladding layer, wherein the first electrode layer is formed to operate as a waveguide.
摘要翻译：所提供的半导体激光器件包括衬底，有源层，位于有源层和衬底之间的第一覆层，位于有源层上的第二覆层，以及形成有金属波导层的第一电极层的折射率小于第二包覆层的金属，并形成在第二包覆层上，其中第一电极层形成为作为波导进行工作。

4. 发明授权

US07785911B2 Semiconductor laser diode with current restricting layer and fabrication method thereof 失效
标题翻译：具有限流层的半导体激光二极管及其制造方法
公开(公告)号：US07785911B2
公开(公告)日：2010-08-31
申请号：US11580093
申请日：2006-10-13
申请人： Joon-seop Kwak , Kyoung-ho Ha , Yoon-joon Sung
发明人： Joon-seop Kwak , Kyoung-ho Ha , Yoon-joon Sung
IPC分类号： H01L21/86
CPC分类号： H01S5/22 , H01S5/2063 , H01S5/32341
摘要： Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
摘要翻译：提供一种具有电流限制层的半导体激光二极管及其制造方法。半导体激光二极管包括衬底，沉积在衬底上的第一材料层，沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层，以便限制注入有源层的电流。因此，可以制造具有低共振临界电流值的改进的半导体激光二极管，其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度，同时保持脊部的宽度。

5. 发明授权

US07151786B2 Semiconductor laser diode with current restricting layer and fabrication method thereof 失效
标题翻译：具有限流层的半导体激光二极管及其制造方法
公开(公告)号：US07151786B2
公开(公告)日：2006-12-19
申请号：US10456510
申请日：2003-06-09
申请人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
发明人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01S3/19 , H01S5/00
CPC分类号： H01S5/22 , H01S5/2063 , H01S5/32341
摘要： Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
摘要翻译：提供一种具有电流限制层的半导体激光二极管及其制造方法。半导体激光二极管包括衬底，沉积在衬底上的第一材料层，沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层，以便限制注入有源层的电流。因此，可以制造具有低共振临界电流值的改进的半导体激光二极管，其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度，同时保持脊部的宽度。

6. 发明申请

US20070041413A1 Semiconductor laser diode with current restricting layer and fabrication method thereof 失效
标题翻译：具有限流层的半导体激光二极管及其制造方法
公开(公告)号：US20070041413A1
公开(公告)日：2007-02-22
申请号：US11580093
申请日：2006-10-13
申请人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
发明人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/2063 , H01S5/32341
摘要： Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
摘要翻译：提供一种具有电流限制层的半导体激光二极管及其制造方法。半导体激光二极管包括衬底，沉积在衬底上的第一材料层，沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层，以便限制注入有源层的电流。因此，可以制造具有低共振临界电流值的改进的半导体激光二极管，其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度，同时保持脊部的宽度。

7. 发明申请

US20060109881A1 Semiconductor laser diode and method of fabricating the same 审中-公开
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US20060109881A1
公开(公告)日：2006-05-25
申请号：US11221872
申请日：2005-09-09
申请人： Joon-seop Kwak , Kwang-ki Choi , Kyoung-ho Ha , Yeon-hee Kim , Jong-in Shim
发明人： Joon-seop Kwak , Kwang-ki Choi , Kyoung-ho Ha , Yeon-hee Kim , Jong-in Shim
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/2202
摘要： A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer.
摘要翻译：提供半导体激光二极管及其制造方法。半导体激光二极管包括：基板; 形成在所述基板上的预定化合物半导体层; 形成在所述化合物半导体层上的下包层; 形成在下包层上的有源层; 在所述有源层上形成有在其中间形成有脊的上包层; 沟槽形成在脊的至少一侧上的预定深度，以从上包层穿透有源层; 形成在上包层的表面以外的电流阻挡层，除了脊的上表面和沟槽的内壁之外; 形成在所述脊的顶表面上的接触层; 以及形成在接触层和电流阻挡层的顶表面上的第一电极。

8. 发明申请

US20110272706A1 LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20110272706A1
公开(公告)日：2011-11-10
申请号：US13188297
申请日：2011-07-21
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/02 , H01L33/50
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。可以通过调节荧光层的厚度来控制波长在荧光层上传播而移动的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

9. 发明申请

US20100285622A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20100285622A1
公开(公告)日：2010-11-11
申请号：US12842096
申请日：2010-07-23
申请人： Joon-seop Kwak , Jae-hee Cho
发明人： Joon-seop Kwak , Jae-hee Cho
IPC分类号： H01L33/10 , H01L33/02
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

10. 发明申请

US20070015313A1 Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 审中-公开
标题翻译：半导体激光二极管的基座，其制造方法以及使用该基座的半导体激光二极管组件
公开(公告)号：US20070015313A1
公开(公告)日：2007-01-18
申请号：US11477911
申请日：2006-06-30
申请人： Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
发明人： Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01S5/0206 , H01L33/62 , H01L2924/0002 , H01S5/0207 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/2205 , H01L2924/00
摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.
摘要翻译：提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式