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1. 发明授权

US07736925B2 Method of fabricating nitride-based semiconductor laser diode 失效
标题翻译：制造氮化物基半导体激光二极管的方法
公开(公告)号：US07736925B2
公开(公告)日：2010-06-15
申请号：US11448800
申请日：2006-06-08
申请人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
发明人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
摘要翻译：提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域，包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

2. 发明授权

US07483463B2 Ridge-waveguide semiconductor laser diode 有权
标题翻译：脊波导半导体激光二极管
公开(公告)号：US07483463B2
公开(公告)日：2009-01-27
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.
摘要翻译：提供了具有改进的电流注入结构的脊 - 波导半导体激光二极管。脊波导半导体激光二极管包括：基板; 形成在所述基板上的下部多半导体层; 形成在下多层半导体层上的有源层; 具有脊部并形成在有源层上的上多层半导体层; 以及形成在所述上多层半导体层上的上电极，其中所述上电极覆盖所述脊部的至少一个侧表面。

3. 发明授权

US07724795B2 Semiconductor optoelectronic device and method of fabricating the same 有权
标题翻译：半导体光电器件及其制造方法
公开(公告)号：US07724795B2
公开(公告)日：2010-05-25
申请号：US11878495
申请日：2007-07-25
申请人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/0014 , H01S5/2004 , H01S5/2009 , H01S5/321 , H01S5/3213 , H01S5/3403 , H01S5/3406 , H01S5/34333
摘要： Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.
摘要翻译：提供了一种半导体光电器件，其可以包括分别包括量子阱和在衬底上的势垒层，有源层上和下面的上波导层和下层波导层的有源层，以及位于有源层之上和之下的上和下包层上下波导层。半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层（OCL），并且具有小于上波导层的能隙的能隙，并且等于或大于能隙以及有源层和下波导层之间的下部OCL，并且具有小于下部波导层的能隙的能隙，并且等于或小于势垒层的能隙。还提供了一种制造半导体光电器件的方法。

4. 发明申请

US20070183466A1 Laser display device 审中-公开
标题翻译：激光显示装置
公开(公告)号：US20070183466A1
公开(公告)日：2007-08-09
申请号：US11513224
申请日：2006-08-31
申请人： Joong-kon Son , Jeong-wook Lee , Ho-sun Paek , Sung-nam Lee , Tan Sakong
发明人： Joong-kon Son , Jeong-wook Lee , Ho-sun Paek , Sung-nam Lee , Tan Sakong
IPC分类号： H01S3/10 , H01S3/00
CPC分类号： H04N9/3129
摘要： A laser display device is provided which includes: a light source emitting at least one laser beam; a light modulation unit for modulating the laser beam emitted from the light source according to an image signal; a scanning unit scanning the laser beam modulated in the light modulation unit in a main scanning direction and in a sub-scanning direction; and an image unit in which an image is formed having a phosphor layer in which excitation light is generated by a laser beam scanned by the scanning unit.
摘要翻译：提供了一种激光显示装置，其包括：发射至少一个激光束的光源; 光调制单元，用于根据图像信号调制从光源发射的激光束; 扫描单元沿主扫描方向和副扫描方向扫描在调光单元中调制的激光束; 以及其中形成有图像的图像单元，其具有通过由扫描单元扫描的激光束产生激发光的荧光体层。

5. 发明申请

US20070114563A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070114563A1
公开(公告)日：2007-05-24
申请号：US11600762
申请日：2006-11-17
申请人： Ho-sun Paek , Tan Sakong , Joong-kon Son , Sung-nam Lee
发明人： Ho-sun Paek , Tan Sakong , Joong-kon Son , Sung-nam Lee
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： Provided are semiconductor devices having improved surface morphology characteristics, and a method of fabricating the same. The semiconductor device includes: an r-plane sapphire substrate; an AlxGa(1-x)N(0≦×
摘要翻译：提供了具有改进的表面形态特性的半导体器件及其制造方法。半导体器件包括：r面蓝宝石衬底; 在r面蓝宝石衬底上外延生长的Al x Ga（1-x）N（0≤x≤1）缓冲层，其厚度范围为在含有氮气（N 2/2）的气体气氛中，在900-1100℃的温度下进行100-20000。以及形成在缓冲层上的第一a面GaN层。

6. 发明申请

US20070087460A1 Method of fabricating nitride-based semiconductor laser diode 失效
标题翻译：制造氮化物基半导体激光二极管的方法
公开(公告)号：US20070087460A1
公开(公告)日：2007-04-19
申请号：US11448800
申请日：2006-06-08
申请人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
发明人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
摘要翻译：提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域，包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

7. 发明申请

US20060231850A1 Semiconductor laser diode having ridge portion and method of manufacturing the same 审中-公开
标题翻译：具有脊部的半导体激光二极管及其制造方法
公开(公告)号：US20060231850A1
公开(公告)日：2006-10-19
申请号：US11350936
申请日：2006-02-10
申请人： Tan Sakong , Tae-hoon Jang , Joong-kon Son , Han-youl Ryu
发明人： Tan Sakong , Tae-hoon Jang , Joong-kon Son , Han-youl Ryu
IPC分类号： H01L33/00
CPC分类号： H01S5/2231 , H01S5/0422 , H01S5/221 , H01S5/2226 , H01S5/2227 , H01S5/32341 , H01S2304/04
摘要： Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe shaped ridge portion; and a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.
摘要翻译：提供了具有脊部分的半导体激光二极管和制造半导体激光二极管的方法。半导体激光二极管包括：第一覆盖层，形成在第一覆盖层上的有源层，形成在有源层上并具有条形脊部分的第二覆盖层; 以及由AlGaInN形成的埋层，并且在除了所述脊部的上表面的区域之外的所述第二包覆层上生长。

8. 发明授权

US07058105B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US07058105B2
公开(公告)日：2006-06-06
申请号：US10624687
申请日：2003-07-23
申请人： Sung-nam Lee , Kyoung-ho Ha , Tan Sakong
发明人： Sung-nam Lee , Kyoung-ho Ha , Tan Sakong
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3211 , H01S5/34333
摘要： A highly efficient semiconductor optoelectronic device is provided. The semiconductor optoelectronic device includes an active layer, an upper waveguide layer provided on the active layer and a lower waveguide layer provided under the active layer, an upper cladding layer provided on the upper waveguide layer and a lower cladding layer provided under the lower waveguide layer, a substrate supporting a deposited structure of the lower cladding layer, the lower waveguide layer, the active layer, the upper waveguide layer, and the upper cladding layer, and upper and lower optical confinement layers provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, respectively, and having an energy gap that is smaller than those of the upper and lower waveguide layers but greater than that of the active layer.
摘要翻译：提供了一种高效的半导体光电子器件。半导体光电子器件包括有源层，设置在有源层上的上波导层和设置在有源层下的下波导层，设置在上波导层上的上包层和设置在下波导层下的下包层，支撑下包层，下波导层，有源层，上波导层和上包层的沉积结构的基板，以及设置在有源层和上波导层之间的上和下光限制层并且分别在有源层和下波导层之间并且具有小于上波导层和下波导层的能隙的能隙，但是大于有源层的能隙。

9. 发明申请

US20050082548A1 III-V group GaN-based semiconductor device and method of manufacturing the same 审中-公开
标题翻译： III-V族GaN基半导体器件及其制造方法
公开(公告)号：US20050082548A1
公开(公告)日：2005-04-21
申请号：US10951905
申请日：2004-09-29
申请人： Tan Sakong , Ho-sun Paek , Sung-nam Lee , Joong-kon Son , Won-seok Lee
发明人： Tan Sakong , Ho-sun Paek , Sung-nam Lee , Joong-kon Son , Won-seok Lee
IPC分类号： B82Y20/00 , H01S5/02 , H01S5/20 , H01S5/343 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/02 , H01S5/2009 , H01S5/3072 , H01S5/34333 , H01S2301/173 , H01S2301/176 , H01S2304/00
摘要： Provided are a III-V group GaN-based compound semiconductor device and a method of manufacturing the same. The device includes an AlGaN diffusion blocking layer and an InGaN sacrificial layer interposed between an active layer having a multiple quantum well and a p-type GaN-based compound semiconductor layer.
摘要翻译：提供III-V族GaN基化合物半导体器件及其制造方法。该器件包括插入在具有多量子阱的有源层和p型GaN基化合物半导体层之间的AlGaN扩散阻挡层和InGaN牺牲层。

10. 发明申请

US20160141455A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20160141455A1
公开(公告)日：2016-05-19
申请号：US14940720
申请日：2015-11-13
申请人： Jin-young LIM , Tan Sakong , Byoung-kyun Kim , Jong-hak Kim
发明人： Jin-young LIM , Tan Sakong , Byoung-kyun Kim , Jong-hak Kim
IPC分类号： H01L33/24 , H01L33/22 , H01L33/00 , H01L33/48 , H01L33/52 , H01L33/32 , H01L33/06
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/06 , H01L33/22 , H01L33/32 , H01L2224/48091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.
摘要翻译：发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，并且具有多个V型阱。发光装置还包括在第一导电类型半导体层和第二导电类型半导体层之间的层质量改进层，并且具有多个V形凹坑，其具有与多个V形凹坑大致相同的尺寸和形状活性层，其中层质量改进层是包括Al或In的III-V族III族半导体层。由于改善的层质量，发光器件的发光质量得到改善。

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