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1. 发明申请

US20050180475A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20050180475A1
公开(公告)日：2005-08-18
申请号：US11061541
申请日：2005-02-18
申请人： Kyoung-ho Ha , Joon-seop Kwak , Sung-nam Lee , Jung-hye Chae
发明人： Kyoung-ho Ha , Joon-seop Kwak , Sung-nam Lee , Jung-hye Chae
IPC分类号： H01S5/20 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323
CPC分类号： H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3211 , H01S5/3214 , H01S5/32341 , H01S2301/173
摘要： The provided semiconductor laser device includes a substrate, an active layer, a first cladding layer located between the active layer and the substrate, a second cladding layer located on the active layer, and a first electrode layer including a metal waveguide layer, which is formed of a metal having a smaller refractive index than the second cladding layer, and formed on the second cladding layer, wherein the first electrode layer is formed to operate as a waveguide.
摘要翻译：所提供的半导体激光器件包括衬底，有源层，位于有源层和衬底之间的第一覆层，位于有源层上的第二覆层，以及形成有金属波导层的第一电极层的折射率小于第二包覆层的金属，并形成在第二包覆层上，其中第一电极层形成为作为波导进行工作。

2. 发明授权

US07693200B2 Semiconductor laser diode having ridge 有权
标题翻译：具有脊的半导体激光二极管
公开(公告)号：US07693200B2
公开(公告)日：2010-04-06
申请号：US11657672
申请日：2007-01-25
申请人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
发明人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/34333
摘要： A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
摘要翻译：提供一种半导体激光二极管，其包括基板，以及顺序地形成在基板上的第一半导体层，有源层，第二半导体层和电极。在半导体激光二极管中，第二半导体层具有脊，电极形成在第二半导体层的脊上，宽度小于脊的宽度。

3. 发明申请

US20070195851A1 Semiconductor laser diode having ridge 有权
标题翻译：具有脊的半导体激光二极管
公开(公告)号：US20070195851A1
公开(公告)日：2007-08-23
申请号：US11657672
申请日：2007-01-25
申请人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
发明人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
IPC分类号： H01S3/00 , H01S5/00 , H01S3/097
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/34333
摘要： A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
摘要翻译：提供一种半导体激光二极管，其包括基板，以及顺序地形成在基板上的第一半导体层，有源层，第二半导体层和电极。在半导体激光二极管中，第二半导体层具有脊，电极形成在第二半导体层的脊上，宽度小于脊的宽度。

4. 发明申请

US20080111139A1 Vertical light emitting device and method of manufacturing the same 审中-公开
标题翻译：垂直发光装置及其制造方法
公开(公告)号：US20080111139A1
公开(公告)日：2008-05-15
申请号：US11878348
申请日：2007-07-24
申请人： Jung-hye Chae , Myoung-gyun Suh
发明人： Jung-hye Chae , Myoung-gyun Suh
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/145 , H01L33/405
摘要： Provided is a vertical light emitting device having improved light extraction efficiency and a method of manufacturing the same. The vertical light emitting device may include a p type electrode, a p type semiconductor layer, an active layer, and an n type semiconductor layer which may be sequentially formed on the p type electrode, and an n type electrode on a portion of a surface of the n type semiconductor layer, wherein the portion of the surface of the n type semiconductor layer may be at an inclined plane inclined from an area near a circumference of the n type electrode towards the active layer. The p type electrode may include a current blocking layer which is made of an insulating material and on the p type electrode directly under the n type electrode. Accordingly, a voltage increase may be minimized or reduced, and light extraction efficiency may be improved.
摘要翻译：提供了一种具有改进的光提取效率的垂直发光器件及其制造方法。垂直发光装置可以包括可以顺序地形成在p型电极上的p型电极，ap型半导体层，有源层和n型半导体层，以及在n型电极的表面的一部分上的n型电极 n型半导体层，其中n型半导体层的表面的部分可以处于从n型电极的圆周附近的区域向有源层倾斜的倾斜面。 p型电极可以包括由绝缘材料制成的电流阻挡层和在n型电极正下方的p型电极上。因此，电压增加可以被最小化或降低，并且可以提高光提取效率。

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