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1. 发明申请

US20110162698A1 Solar cells using nanowires and methods of manufacturing the same 审中-公开
标题翻译：使用纳米线的太阳能电池及其制造方法
公开(公告)号：US20110162698A1
公开(公告)日：2011-07-07
申请号：US12926125
申请日：2010-10-27
申请人： Xianyu Wenxu , Yeon-hee Kim , Jung-hyun Lee
发明人： Xianyu Wenxu , Yeon-hee Kim , Jung-hyun Lee
IPC分类号： H01L31/0256 , H01L31/18 , H01L31/0224 , B82Y30/00
CPC分类号： B82Y30/00 , H01L31/035227 , H01L31/03529 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Solar cells and methods of manufacturing the same, the solar cells include a plurality of nanowire heterostructures, wherein each of the plurality of nanowire heterostructures includes a nanowire including at least one p-type nanowire layer and at least one n-type nanowire layer, and a semiconductor material layer disposed on the nanowire. The semiconductor material layer constitutes a p-n junction with the p-type or n-type nanowire layer. The semiconductor material layer includes at least one of the p-type material layer and the n-type material layer.
摘要翻译：太阳能电池及其制造方法，太阳能电池包括多个纳米线异质结构，其中，所述多个纳米线异质结构中的每一个都包括包含至少一个p型纳米线层和至少一个n型纳米线层的纳米线，以及设置在纳米线上的半导体材料层。半导体材料层与p型或n型纳米线层构成p-n结。半导体材料层包括p型材料层和n型材料层中的至少一种。

2. 发明申请

US20060109881A1 Semiconductor laser diode and method of fabricating the same 审中-公开
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US20060109881A1
公开(公告)日：2006-05-25
申请号：US11221872
申请日：2005-09-09
申请人： Joon-seop Kwak , Kwang-ki Choi , Kyoung-ho Ha , Yeon-hee Kim , Jong-in Shim
发明人： Joon-seop Kwak , Kwang-ki Choi , Kyoung-ho Ha , Yeon-hee Kim , Jong-in Shim
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/2202
摘要： A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer.
摘要翻译：提供半导体激光二极管及其制造方法。半导体激光二极管包括：基板; 形成在所述基板上的预定化合物半导体层; 形成在所述化合物半导体层上的下包层; 形成在下包层上的有源层; 在所述有源层上形成有在其中间形成有脊的上包层; 沟槽形成在脊的至少一侧上的预定深度，以从上包层穿透有源层; 形成在上包层的表面以外的电流阻挡层，除了脊的上表面和沟槽的内壁之外; 形成在所述脊的顶表面上的接触层; 以及形成在接触层和电流阻挡层的顶表面上的第一电极。

3. 发明授权

US06291716B1 Ortho-alkylation method of aromatic ketones 失效
标题翻译：芳香酮的正烷基化方法
公开(公告)号：US06291716B1
公开(公告)日：2001-09-18
申请号：US09792108
申请日：2001-02-26
申请人： Chul Ho Jun , Jun Bae Hong , Kwan Yong Chung , Yeon Hee Kim
发明人： Chul Ho Jun , Jun Bae Hong , Kwan Yong Chung , Yeon Hee Kim
IPC分类号： C07C4568
CPC分类号： C07C45/69 , C07C45/516 , C07F7/083
摘要： An ortho-alkylation method of an aromatic ketone. In the method, as starting materials, the aromatic ketone is reacted with aliphatic or aromatic alkyl moiety-containing olefins in the presence of a primary amine and a transition metal catalyst as reaction catalysts, or ketimines resulting from a reaction of aromatic ketones with a primary amine are reacted with aliphatic or aromatic alkyl moiety-containing olefins in the presence of a transition metal catalyst, thereby introducing the alkyl moiety to the ortho-position of the aromatic ketone.
摘要翻译：芳香酮的邻位烷基化方法。在该方法中，作为起始原料，芳族酮在含有伯胺和过渡金属催化剂作为反应催化剂的存在下与含脂肪族或芳香族含烷基部分的烯烃反应，或由芳香族酮与伯胺在与过渡金属催化剂存在下与脂族或芳族含烷基部分的烯烃反应，从而将烷基部分引入芳族酮的邻位。

4. 发明申请

US20120192916A1 Photovoltaic Fiber, Photovoltaic Cell Module Using The Same, And Method Of Manufacturing The Same 审中-公开
标题翻译：光伏光纤，使用它的光伏电池模块及其制造方法
公开(公告)号：US20120192916A1
公开(公告)日：2012-08-02
申请号：US13286609
申请日：2011-11-01
申请人： Xianyu WENXU , Yeon-Hee KIM , Woo Young YANG
发明人： Xianyu WENXU , Yeon-Hee KIM , Woo Young YANG
IPC分类号： H01L31/045 , H01L31/18 , H01L31/02
CPC分类号： H01L31/035281 , H01L27/304 , H01L31/0201 , H01L31/042 , H01L31/0504 , H01L31/0508 , H01L31/075 , H01L31/18 , H02S30/20 , Y02E10/548
摘要： A photovoltaic fiber may include a first electrode surrounding a base fiber, a photoactive layer surrounding the first electrode and having a photovoltaic junction positioned in a radial direction. The photovoltaic fiber may also include a second electrode surrounding the photoactive layer is provided.
摘要翻译：光伏光纤可以包括围绕基础光纤的第一电极，围绕第一电极并具有沿径向方向定位的光伏结的光敏层。光伏光纤还可以包括围绕光敏层的第二电极。

5. 发明申请

US20120048360A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120048360A1
公开(公告)日：2012-03-01
申请号：US12984998
申请日：2011-01-05
申请人： Xianyu Wenxu , Yong-Young PARK , Yeon-Hee KIM , Woo-Young YANG , Hyun-Jong KIM
发明人： Xianyu Wenxu , Yong-Young PARK , Yeon-Hee KIM , Woo-Young YANG , Hyun-Jong KIM
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/068 , C03C8/18 , H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell including: a semiconductor substrate, a passivation film disposed on a side of the semiconductor substrate, a protective layer disposed on a side of the passivation film opposite the semiconductor substrate, and an electrode disposed on a side of the protective layer opposite the passivation film, wherein the electrode includes a product of a conductive paste including glass frit and a conductive material, and wherein the protective layer includes a material having an absolute value of a Gibb's free energy which is less than an absolute value of a Gibb's free energy of each component of the glass frit.
摘要翻译：一种太阳能电池，包括：半导体基板，设置在半导体基板一侧的钝化膜，设置在与半导体基板相对的钝化膜侧的保护层，以及设置在与该半导体基板相对的保护层侧的电极钝化膜，其中所述电极包括包括玻璃料和导电材料的导电浆料的产品，并且其中所述保护层包括绝对值为Gibb的自由能的材料，其比Gibb的自由能的绝对值小的玻璃料的每个组分。

6. 发明授权

US07935641B2 Thin film etching method 有权
标题翻译：薄膜蚀刻法
公开(公告)号：US07935641B2
公开(公告)日：2011-05-03
申请号：US11984760
申请日：2007-11-21
申请人： Yeon-hee Kim , Jung-hyun Lee , Yong-young Park , Chang-soo Lee
发明人： Yeon-hee Kim , Jung-hyun Lee , Yong-young Park , Chang-soo Lee
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L29/7869
摘要： Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.
摘要翻译：示例性方法可以提供薄膜蚀刻方法。示例性薄膜蚀刻方法可以包括在衬底上形成Ga-In-Zn-O膜，形成覆盖Ga-In-Zn-O膜的一部分的掩模层，并且蚀刻Ga-In-Zn-O膜使用掩模层作为蚀刻阻挡层，其中在蚀刻中使用的蚀刻气体包括氯。蚀刻气体还可以包括烷烃（C n H 2n + 2）和H 2气体。氯气可以是例如Cl 2，BCl 3和/或CCl 3，并且烷烃气体可以是例如CH 4。

7. 发明申请

US20080166834A1 Thin film etching method 有权
标题翻译：薄膜蚀刻法
公开(公告)号：US20080166834A1
公开(公告)日：2008-07-10
申请号：US11984760
申请日：2007-11-21
申请人： Yeon-hee Kim , Jung-hyun Lee , Yong-young Park , Chang-soo Lee
发明人： Yeon-hee Kim , Jung-hyun Lee , Yong-young Park , Chang-soo Lee
IPC分类号： H01L21/34
CPC分类号： H01L29/7869
摘要： Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.
摘要翻译：示例性方法可以提供薄膜蚀刻方法。示例性薄膜蚀刻方法可以包括在衬底上形成Ga-In-Zn-O膜，形成覆盖Ga-In-Zn-O膜的一部分的掩模层，并且蚀刻Ga-In-Zn-O膜使用掩模层作为蚀刻阻挡层，其中在蚀刻中使用的蚀刻气体包括氯。蚀刻气体还可以包括烷烃（C n H 2 H 2n + 2 H 2）和H 2 H 2气体。氯气可以是例如Cl 2，BCl 3和/或CCl 3，烷烃气体可以是例如CH 4。

8. 发明授权

US08748969B2 Non-volatile memory device including dummy electrodes and method of fabricating the same 有权
标题翻译：包括虚拟电极的非易失性存储器件及其制造方法
公开(公告)号：US08748969B2
公开(公告)日：2014-06-10
申请号：US12654470
申请日：2009-12-22
申请人： Xianyu Wenxu , Jung-hyun Lee , Dong-joon Ma , Yeon-hee Kim , Yong-young Park , Chang-soo Lee
发明人： Xianyu Wenxu , Jung-hyun Lee , Dong-joon Ma , Yeon-hee Kim , Yong-young Park , Chang-soo Lee
IPC分类号： H01L29/792
CPC分类号： H01L27/11556 , H01L27/11551 , H01L27/11578
摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.
摘要翻译：提供了一种非易失性存储器件及其制造方法。非易失性存储器件可以包括衬底和衬底上的多个半导体柱。多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。多个通孔塞可以连接到多个控制栅电极。多个字线可以在多个通孔插头上。多个通孔塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

9. 发明授权

US08587142B2 Method and system for controlling wind farm when wind speed varies abruptly 失效
标题翻译：风速突然变化时控制风电场的方法和系统
公开(公告)号：US08587142B2
公开(公告)日：2013-11-19
申请号：US13225422
申请日：2011-09-03
申请人： Yong Cheol Kang , Yeon Hee Kim , Tai Ying Zheng
发明人： Yong Cheol Kang , Yeon Hee Kim , Tai Ying Zheng
IPC分类号： H02P9/04
CPC分类号： F03D7/048 , F03D9/257 , Y02E10/723
摘要： The present invention relates to a method and system for controlling a wind farm when a ramp up or ramp down rate of the wind farm does not satisfy a grid-code or corresponding criteria due to an abrupt change in wind speed. The method and system for controlling a wind farm includes the steps of measuring speed and direction of wind performed outside the wind farm, sequentially controlling wind turbines if the wind speed abruptly changes considering a time for the wind to arrive at the wind turbines, determining the number of wind turbines to be controlled simultaneously so that the wind farm may satisfy the grid-code at this point, grouping the wind turbines, determining a control sequence and a control time of each group, and adjusting a control end time if stopping times of adjacent groups are overlapped when the wind turbines are stopped.
摘要翻译：本发明涉及一种风电场的斜坡上升或下降速率由于风速突然变化而不满足电网码或相应准则的情况下，用于控制风电场的方法和系统。用于控制风力发电场的方法和系统包括以下步骤：测量在风力发电场外进行的风的速度和方向，如果考虑到风到达风力涡轮机的时间风速突然改变，则依次控制风力涡轮机，确定要同时控制的风力涡轮机的数量，使得风力发电场在这一点上可以满足电网码，分组风力涡轮机，确定每个组的控制序列和控制时间，以及如果停止时间当风力涡轮机停止时，相邻的组重叠。

10. 发明申请

US20120200086A1 METHOD AND SYSTEM FOR CONTROLLING WIND FARM WHEN WIND SPEED VARIES ABRUPTLY 失效
标题翻译：风速变化时控制风力发电机的方法和系统
公开(公告)号：US20120200086A1
公开(公告)日：2012-08-09
申请号：US13225422
申请日：2011-09-03
申请人： Yong Cheol KANG , Yeon Hee KIM , Tai Ying ZHENG
发明人： Yong Cheol KANG , Yeon Hee KIM , Tai Ying ZHENG
IPC分类号： H02P9/04
CPC分类号： F03D7/048 , F03D9/257 , Y02E10/723
摘要： The present invention relates to a method and system for controlling a wind farm when a ramp up or ramp down rate of the wind farm does not satisfy a grid-code or corresponding criteria due to an abrupt change in wind speed. The method and system for controlling a wind farm includes the steps of measuring speed and direction of wind performed outside the wind farm, sequentially controlling wind turbines if the wind speed abruptly changes considering a time for the wind to arrive at the wind turbines, determining the number of wind turbines to be controlled simultaneously so that the wind farm may satisfy the grid-code at this point, grouping the wind turbines, determining a control sequence and a control time of each group, and adjusting a control end time if stopping times of adjacent groups are overlapped when the wind turbines are stopped.
摘要翻译：本发明涉及一种风电场的斜坡上升或下降速率由于风速突然变化而不满足电网码或相应准则的情况下，用于控制风电场的方法和系统。用于控制风力发电场的方法和系统包括以下步骤：测量在风力发电场外进行的风的速度和方向，如果考虑到风到达风力涡轮机的时间风速突然改变，则依次控制风力涡轮机，确定要同时控制的风力涡轮机的数量，使得风力发电场在这一点上可以满足电网码，分组风力涡轮机，确定每个组的控制序列和控制时间，以及如果停止时间当风力涡轮机停止时，相邻的组重叠。

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