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1. 发明申请

US20060109881A1 Semiconductor laser diode and method of fabricating the same 审中-公开
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US20060109881A1
公开(公告)日：2006-05-25
申请号：US11221872
申请日：2005-09-09
申请人： Joon-seop Kwak , Kwang-ki Choi , Kyoung-ho Ha , Yeon-hee Kim , Jong-in Shim
发明人： Joon-seop Kwak , Kwang-ki Choi , Kyoung-ho Ha , Yeon-hee Kim , Jong-in Shim
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/2202
摘要： A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer.
摘要翻译：提供半导体激光二极管及其制造方法。半导体激光二极管包括：基板; 形成在所述基板上的预定化合物半导体层; 形成在所述化合物半导体层上的下包层; 形成在下包层上的有源层; 在所述有源层上形成有在其中间形成有脊的上包层; 沟槽形成在脊的至少一侧上的预定深度，以从上包层穿透有源层; 形成在上包层的表面以外的电流阻挡层，除了脊的上表面和沟槽的内壁之外; 形成在所述脊的顶表面上的接触层; 以及形成在接触层和电流阻挡层的顶表面上的第一电极。

2. 发明授权

US07894499B2 Semiconductor laser device with a rounded base mesa structure 失效
标题翻译：具有圆形底座台面结构的半导体激光器件
公开(公告)号：US07894499B2
公开(公告)日：2011-02-22
申请号：US10823653
申请日：2004-04-14
申请人： Kwang-ki Choi , Joon-seop Kwak
发明人： Kwang-ki Choi , Joon-seop Kwak
IPC分类号： H01S3/16 , H01S5/00
CPC分类号： H01S5/227 , H01S5/32341
摘要： A semiconductor laser device having a smooth cleavage plane is provided. The provided laser device includes a current injection ridge and force distribution ridges formed adjacent to the current injection ridge, which protrudes from an upper surface of a mesa structure. The mesa structure is formed of multi-semiconductor material layers including a laser resonance layer and cladding layers disposed above and below the resonance layer. The current injection ridge and the force distribution ridges distribute a scribing force when cleaving the laser device so that the smooth cleavage planes are obtained. Defects are prevented in the current injection ridge due to the distribution of force when bonding flip chips.
摘要翻译：提供具有平滑解理面的半导体激光器件。提供的激光装置包括从台面结构的上表面突出的电流注入脊和与当前注入脊相邻形成的力分布脊。台面结构由包括激光共振层和设置在共振层上方和下方的包覆层的多半导体材料层形成。当切割激光器件时，当前的注入脊和力分布脊分布划线力，从而获得平滑的解理面。由于在接合倒装芯片时的力分布，在当前的注入脊中防止了缺陷。

3. 发明授权

US07344904B2 Method of fabricating laser diode 有权
标题翻译：制造激光二极管的方法
公开(公告)号：US07344904B2
公开(公告)日：2008-03-18
申请号：US11152255
申请日：2005-06-15
申请人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
发明人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
IPC分类号： H01L33/00
CPC分类号： H01S5/223 , H01S5/22
摘要： Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching the sacrificial layer, the upper electrode layer, the upper contact layer, and a predetermined depth of the upper clad layer; exposing both top surfaces of the upper contact layer and both bottom surfaces of the sacrificial layer corresponding thereto by etching portions of the upper electrode layer, which are exposed on both sides of the ridge portion; forming a buried layer having an opening that exposes at least a portion of the bottom surface of the sacrificial layer, the buried layer formed on the surface of the ridge portion and the top surface of the upper clad layer that extends from the ridge portion; and removing the sacrificial layer and a portion of the buried layer disposed thereon by supplying an etchant through the opening.
摘要翻译：提供了一种制造激光二极管的方法。该方法的实施例包括在基板上顺序地形成下包层，谐振层，上覆层，上接触层，上电极层和牺牲层; 通过蚀刻牺牲层，上电极层，上接触层和上包层的预定深度来形成脊部; 通过暴露在脊部两侧的上电极层的腐蚀部分，暴露上接触层的上表面和对应于其的牺牲层的两个底表面; 形成具有露出所述牺牲层的底面的至少一部分的开口的掩埋层，所述掩埋层形成在所述脊部的表面上以及所述上覆盖层的从所述脊部延伸的顶面; 以及通过通过所述开口提供蚀刻剂来去除所述牺牲层和设置在其上的所述掩埋层的一部分。

4. 发明申请

US20060045155A1 Method of fabricating laser diode 有权
标题翻译：制造激光二极管的方法
公开(公告)号：US20060045155A1
公开(公告)日：2006-03-02
申请号：US11152255
申请日：2005-06-15
申请人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
发明人： Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
IPC分类号： H01S5/00
CPC分类号： H01S5/223 , H01S5/22
摘要： Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching the sacrificial layer, the upper electrode layer, the upper contact layer, and a predetermined depth of the upper clad layer; exposing both top surfaces of the upper contact layer and both bottom surfaces of the sacrificial layer corresponding thereto by etching portions of the upper electrode layer, which are exposed on both sides of the ridge portion; forming a buried layer having an opening that exposes at least a portion of the bottom surface of the sacrificial layer, the buried layer formed on the surface of the ridge portion and the top surface of the upper clad layer that extends from the ridge portion; and removing the sacrificial layer and a portion of the buried layer disposed thereon by supplying an etchant through the opening.
摘要翻译：提供了一种制造激光二极管的方法。该方法的实施例包括在基板上顺序地形成下包层，谐振层，上覆层，上接触层，上电极层和牺牲层; 通过蚀刻牺牲层，上电极层，上接触层和上包层的预定深度来形成脊部; 通过暴露在脊部两侧的上电极层的腐蚀部分，暴露上接触层的上表面和对应于其的牺牲层的两个底表面; 形成具有露出所述牺牲层的底面的至少一部分的开口的掩埋层，所述掩埋层形成在所述脊部的表面上以及所述上覆盖层的从所述脊部延伸的顶面; 以及通过通过所述开口提供蚀刻剂来去除所述牺牲层和设置在其上的所述掩埋层的一部分。

5. 发明授权

US07989244B2 Method of manufacturing nitride-based semiconductor light-emitting device 失效
标题翻译：制造氮化物系半导体发光元件的方法
公开(公告)号：US07989244B2
公开(公告)日：2011-08-02
申请号：US11802482
申请日：2007-05-23
申请人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
发明人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02472 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01S5/0213 , H01S5/0217
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
摘要翻译：提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

6. 发明申请

US20080093617A1 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US20080093617A1
公开(公告)日：2008-04-24
申请号：US11808172
申请日：2007-06-07
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L21/283 , H01L23/48
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

7. 发明授权

US06790693B2 Method for fabricating a laser diode using a reflective layer including an air layer 失效
标题翻译：使用包括空气层的反射层制造激光二极管的方法
公开(公告)号：US06790693B2
公开(公告)日：2004-09-14
申请号：US10420704
申请日：2003-04-23
申请人： Kwang-ki Choi , Jae-hee Cho
发明人： Kwang-ki Choi , Jae-hee Cho
IPC分类号： H01L2100
CPC分类号： H01S5/028 , H01L33/46 , H01S5/0287 , H01S5/125
摘要： A laser diode that uses air as a reflective layer, thereby enhancing reflectance with respect to an oscillating laser beam, and a method for fabricating such a laser diode are provided. The laser diode includes a substrate, a laser oscillating layer formed on the substrate, an upper electrode formed on the laser oscillating layer, and a reflective layer formed at one side of the laser oscillating layer, wherein the reflective layer comprises air layers. According to the laser diode and the method for fabricating the same, it is possible to form a reflective layer having a higher reflectivity with a reduced number of pairs of reflective layers, thereby making a laser diode whose threshold voltage is reduced and which can produce a high-output laser beam.
摘要翻译：提供使用空气作为反射层的激光二极管，从而提高相对于振荡激光束的反射率，以及制造这种激光二极管的方法。激光二极管包括基板，形成在基板上的激光振荡层，形成在激光振荡层上的上电极和形成在激光振荡层一侧的反射层，其中反射层包括空气层。根据激光二极管及其制造方法，可以形成具有较低反射率的反射层，反射层数减少的反射层，从而形成阈值电压降低的激光二极管，并可产生高输出激光束。

8. 发明申请

US20080113462A1 Method of manufacturing vertical light emitting device 有权
标题翻译：制造垂直发光装置的方法
公开(公告)号：US20080113462A1
公开(公告)日：2008-05-15
申请号：US11882259
申请日：2007-07-31
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/02
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
摘要翻译：提供一种垂直发光装置的制造方法。制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型电极，并且切割金属支撑层以将发光层划分为发光器件单元。

9. 发明授权

US07781246B2 Method of manufacturing vertical light emitting device 有权
标题翻译：制造垂直发光装置的方法
公开(公告)号：US07781246B2
公开(公告)日：2010-08-24
申请号：US11882259
申请日：2007-07-31
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
摘要翻译：提供一种垂直发光装置的制造方法。制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型电极，并且切割金属支撑层以将发光层划分为发光器件单元。

10. 发明申请

US20060268951A1 Nitride-based semiconductor laser diode and method of manufacturing the same 审中-公开
标题翻译：基于氮化物的半导体激光二极管及其制造方法
公开(公告)号：US20060268951A1
公开(公告)日：2006-11-30
申请号：US11372205
申请日：2006-03-10
申请人： Kwang-ki Choi
发明人： Kwang-ki Choi
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/168 , H01S5/221 , H01S5/2214 , H01S5/32341
摘要： A nitride-based semiconductor laser diode and a method of manufacturing the same are provided. The nitride-based semiconductor laser diode includes a first material layer, an active material layer, and a second material layer that are sequentially formed; a ridge formed on the second material layer; and a current blocking layer formed of AlGaN on at least one top surface of both ends of the ridge and both lateral surfaces of the ridge.
摘要翻译：提供一种氮化物基半导体激光二极管及其制造方法。氮化物系半导体激光二极管包括依次形成的第一材料层，活性物质层和第二材料层; 形成在第二材料层上的脊; 以及在脊的两端的至少一个顶表面和脊的两个侧表面上由AlGaN形成的电流阻挡层。

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