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1. 发明授权

US09728930B2 Quantum cascade external cavity laser with metasurfaces 有权
公开(公告)号：US09728930B2
公开(公告)日：2017-08-08
申请号：US15264509
申请日：2016-09-13
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： Benjamin Stanford Williams , Luyao Xu , Daguan Chen
IPC分类号： H01S3/10 , H01S3/08 , H01S5/024 , H01S5/34 , H01S5/343 , H01S5/14 , H01S5/068
CPC分类号： H01S3/08059 , H01S3/08054 , H01S5/02407 , H01S5/02469 , H01S5/0425 , H01S5/06821 , H01S5/14 , H01S5/18 , H01S5/2027 , H01S5/22 , H01S5/3214 , H01S5/3401 , H01S5/3402 , H01S5/34313 , H01S5/42
摘要： A metasurface reflector for quantum cascade lasing is disclosed. The metasurface reflector uses an array of subcavities disposed on a substrate and spaced with a sub-wavelength period. Each of the subcavities includes a layer of quantum-cascade-laser-active material sandwiched between two metallic layers. The array of subcavities reflect an incident light of a resonant frequency with amplification. When used with an output coupler, a quantum cascade laser beam can be generated.

2. 发明申请

US20170214214A1 HYBRID SEMICONDUCTOR LASER ABSENT A TOP SEMICONDUCTOR CLADDING LAYER 审中-公开
公开(公告)号：US20170214214A1
公开(公告)日：2017-07-27
申请号：US14262326
申请日：2014-04-25
申请人： The Board of Regents of the University of Oklahoma
发明人： Rui Qing Yang
IPC分类号： H01S5/026 , H01S5/042
CPC分类号： H01S5/3211 , H01S5/0425 , H01S5/22 , H01S5/3214 , H01S5/3401 , H01S5/3422 , H01S2301/166
摘要： In at least one embodiment, a semiconductor laser is constructed to have a waveguide core including an active region, a top cladding, and a bottom cladding. The top cladding is positioned above the waveguide core and comprises a dielectric layer and a metal layer and optionally a thin semiconductor contact layer. In at least one embodiment of the semiconductor laser, the top cladding is absent a semiconductor material which is able to contain at least 1% of an optical wave that is generated within the waveguide core.

3. 发明申请

US20170195062A1 PHOTONIC INTEGRATED CIRCUIT 审中-公开
公开(公告)号：US20170195062A1
公开(公告)日：2017-07-06
申请号：US15398712
申请日：2017-01-04
申请人： Infinera Corporation
发明人： Peter W. Evans , Jeffrey T. Rahn , Vikrant Lal , Miguel Iglesias Olmedo , Amir Hosseini , Parmijit Samra , Scott Corzine , Ryan W. Going
IPC分类号： H04B10/61 , G02B6/12 , G02B6/28 , H04B10/50 , G02B26/04
CPC分类号： H01S5/1017 , G02B6/12004 , G02B6/2813 , G02B26/04 , G02B2006/12121 , G02F1/2255 , G02F1/2257 , G02F2001/212 , G02F2201/58 , H01S5/02453 , H01S5/02461 , H01S5/0261 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/1003 , H01S5/1014 , H01S5/1215 , H01S5/2081 , H01S5/22 , H01S5/3013 , H01S5/3214 , H01S2301/176 , H04B10/2507 , H04B10/40 , H04B10/503 , H04B10/616 , H04B10/67
摘要： Methods, systems, and apparatus, including an optical receiver including a laser including a gain section; and a first tunable reflector configured to output a reference signal; a first coupler formed over the substrate; a shutter variable optical attenuator formed over the substrate, the shutter variable optical attenuator including an input port configured to receive the first portion of the reference signal from the laser; and an output port configured to provide or to block, based on a control signal, the first portion of the reference signal from the laser; and a second coupler including a first port configured to receive the first portion of the reference signal from the shutter variable optical attenuator; and a second port configured to (i) provide the first portion of the reference signal from the shutter variable optical attenuator to an optical analyzer or (ii) receive a data signal from a transmitter.

4. 发明申请

US20170063045A1 MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL 有权
标题翻译：在C-PLANE GALLIUM和NITROGEN MATERIAL上形成的可制造的激光二极管
公开(公告)号：US20170063045A1
公开(公告)日：2017-03-02
申请号：US15177710
申请日：2016-06-09
申请人： Soraa Laser Diode, Inc.
发明人： Melvin McLaurin , James W. Raring , Alexander Sztein , Po Shan Hsu
IPC分类号： H01S5/343 , H01S5/32 , H01S5/20 , H01S5/02 , H01S5/22
CPC分类号： H01S5/34333 , H01L2224/18 , H01L2224/48091 , H01L2224/48465 , H01L2924/16152 , H01L2924/3512 , H01S5/005 , H01S5/0215 , H01S5/0217 , H01S5/02248 , H01S5/02276 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3202 , H01S5/3211 , H01S5/3214 , H01S5/4043 , H01S5/4093 , H01S2301/173 , H01S2301/176 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
摘要翻译：一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层包层区域和覆盖有源层区域的p型覆层区域。外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

5. 发明申请

US20150140710A1 MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL 有权
标题翻译：在C-PLANE GALLIUM和NITROGEN MATERIAL上形成的可制造的激光二极管
公开(公告)号：US20150140710A1
公开(公告)日：2015-05-21
申请号：US14559149
申请日：2014-12-03
申请人： Soraa Laser Diode, Inc.
发明人： Melvin McLaurin , James W. Raring , Alexander Sztein , Po Shan Hsu
IPC分类号： H01S5/343 , H01S5/20 , H01S5/042 , H01S5/22 , H01S5/02
CPC分类号： H01S5/34333 , H01L2224/18 , H01L2224/48091 , H01L2224/48465 , H01L2924/16152 , H01L2924/3512 , H01S5/005 , H01S5/0215 , H01S5/0217 , H01S5/02248 , H01S5/02276 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3202 , H01S5/3211 , H01S5/3214 , H01S5/4043 , H01S5/4093 , H01S2301/173 , H01S2301/176 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
摘要翻译：一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层包层区域和覆盖有源层区域的p型覆层区域。外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

6. 发明申请

US20130215921A1 (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE 有权
标题翻译：（Al，Ga，In）N二极管激光器在降低温度下制成
公开(公告)号：US20130215921A1
公开(公告)日：2013-08-22
申请号：US13593340
申请日：2012-08-23
申请人： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01S5/30 , H01L33/32
CPC分类号： H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
摘要翻译：一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯，温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。

7. 发明授权

US08358674B2 Semiconductor laser element and method of manufacturing thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08358674B2
公开(公告)日：2013-01-22
申请号：US13051805
申请日：2011-03-18
申请人： Shinya Sonobe , Shingo Masui , Takashi Miyoshi
发明人： Shinya Sonobe , Shingo Masui , Takashi Miyoshi
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/221 , H01S5/2214 , H01S5/222 , H01S5/3202 , H01S5/3214 , H01S5/34333 , H01S2301/176
摘要： A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction.
摘要翻译：一种半导体激光元件，具有：衬底，在衬底上依次层叠第一导电型半导体层，有源层和第二导电类型半导体层的半导体层，形成在第二导电类型半导体层的上表面上的条状脊，形成在脊的上表面上的导电氧化物层，形成在脊的侧面上的具有低于半导体层的折射率的折射率的介电层和形成为覆盖的金属层导电氧化物层和电介质层，导电氧化物层的表面从电介质层露出，导电氧化物层的侧面相对于脊的上表面倾斜，并且倾斜角度导电氧化物层相对于法线方向的侧面大于脊相对于法线方向的侧面的倾斜角度。

8. 发明授权

US07856040B2 Semiconductor light emitting devices with non-epitaxial upper cladding 有权
标题翻译：具有非外延上包层的半导体发光器件
公开(公告)号：US07856040B2
公开(公告)日：2010-12-21
申请号：US12237106
申请日：2008-09-24
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0045 , H01S5/0425 , H01S5/1039 , H01S5/1228 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/3211 , H01S5/3214 , H01S5/3216
摘要： The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.
摘要翻译：氮化物激光二极管的AlGaN上覆层由诸如金属银的非外延层代替。如果选择具有相对低的折射率值，则在非外延包层中的吸收的模式损耗可以接受地小。如果还选择具有较高的功函数，则非外延层与氮化物半导体形成电接触。也可以在非外延包覆层中使用铟锡氧化物层。

9. 发明申请

US20080008220A1 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20080008220A1
公开(公告)日：2008-01-10
申请号：US11850603
申请日：2007-09-05
申请人： Tetsuzo UEDA , Masaaki YURI
发明人： Tetsuzo UEDA , Masaaki YURI
IPC分类号： H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12.SiO 2阻挡层9形成在InGaN多量子阱有源层5上方以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

10. 发明申请

US20030010987A1 Semiconductor nanocrystalline materials and their uses 审中-公开
标题翻译：半导体纳米晶体材料及其用途
公开(公告)号：US20030010987A1
公开(公告)日：2003-01-16
申请号：US10145609
申请日：2002-05-10
发明人： Uri Banin , Yun-Wei Cao
IPC分类号： H01L027/15
CPC分类号： H01L33/08 , B82Y20/00 , H01L33/30 , H01S5/3214 , H01S5/3401 , H01S5/341 , H01S5/3412 , H01S5/3432 , H01S5/347
摘要： The invention relates to new semiconductor composite nanocrystal materials having desirable luminescent properties, specifically high quantum yields and good photochemical stability with specific, desirable emittance wavelengths, preferably in the near infrared. This invention further relates to various applications in optical, electrical, electro-optical and laser devices, particularly in the field of telecommunication, of these new semiconductor composite nancrystal materials.
摘要翻译：本发明涉及具有所需发光特性的新型半导体复合纳米晶体材料，特别是高量子产率和具有特定期望发射波长的良好光化学稳定性，优选在近红外。本发明还涉及这些新的半导体复合纳米晶体材料的光学，电学，电光学和激光器件，特别是电信领域的各种应用。

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