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1. 发明授权

US07785911B2 Semiconductor laser diode with current restricting layer and fabrication method thereof 失效
标题翻译：具有限流层的半导体激光二极管及其制造方法
公开(公告)号：US07785911B2
公开(公告)日：2010-08-31
申请号：US11580093
申请日：2006-10-13
申请人： Joon-seop Kwak , Kyoung-ho Ha , Yoon-joon Sung
发明人： Joon-seop Kwak , Kyoung-ho Ha , Yoon-joon Sung
IPC分类号： H01L21/86
CPC分类号： H01S5/22 , H01S5/2063 , H01S5/32341
摘要： Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
摘要翻译：提供一种具有电流限制层的半导体激光二极管及其制造方法。半导体激光二极管包括衬底，沉积在衬底上的第一材料层，沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层，以便限制注入有源层的电流。因此，可以制造具有低共振临界电流值的改进的半导体激光二极管，其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度，同时保持脊部的宽度。

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