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    • 7. 发明申请
    • Reservoir built-in type actuator
    • 水箱内置式执行机构
    • US20070209357A1
    • 2007-09-13
    • US11717306
    • 2007-03-12
    • Tetsuji SatoMasahito Kamada
    • Tetsuji SatoMasahito Kamada
    • F16D31/02
    • F15B15/1466B64C13/504F15B1/265F15B7/006
    • A stand pipe is disposed so as to be fitted with the inner periphery surface of a piston rod with a hollow structure and a reservoir is incorporated into the inside of the stand pipe, whereby it becomes possible to reduce the size of an EHA device. Besides, since the reservoir is separated from both an annulus-side oil chamber and a bore-side oil chamber, a stable reservoir performance can be exhibited without being influenced by a fluid pressure resulting from an external force. Moreover, as a result of installation of the stand pipe, a difference between the amount of fluid required per unit stroke in the annulus-side oil chamber and that in the bore-side oil chamber becomes smaller, so that the required volume of the reservoir oil chamber can be reduced and it is possible to constitute an efficient EHA device with little difference between the energy consumption during compressing and that during extending. Consequently, it is possible to provide a reservoir built-in type actuator capable of exhibiting a stable performance without being influenced by an external force acting on the actuator and capable of attaining the reduction in size of the entire EHA device.
    • 立管设置成与具有中空结构的活塞杆的内周面配合,并且将储存器结合到立管的内部,从而可以减小EHA装置的尺寸。 此外,由于储存器与环空侧油室和孔侧油室分离,所以可以显示稳定的储存性能,而不受外力所致的流体压力的影响。 此外,由于安装立管,环形侧油室与孔侧油室的每单位行程所需的流体量之间的差异变小,所以容器的所需体积 可以减少油室,并且可以构成在压缩期间和延伸期间的能量消耗之间几乎没有差异的有效的EHA装置。 因此,可以提供能够显示稳定性能而不受作用在致动器上的外力的影响并且能够实现整个EHA装置的尺寸减小的储液器内置式致动器。
    • 10. 发明授权
    • Plasma processing apparatus and the upper electrode unit
    • 等离子体处理装置和上电极单元
    • US08083891B2
    • 2011-12-27
    • US12894803
    • 2010-09-30
    • Tetsuji Sato
    • Tetsuji Sato
    • H01L21/3065C23C16/00C23C16/455C23C16/50
    • H01L21/67069H01J37/3244
    • In a plasma processing apparatus that executes plasma processing on a semiconductor wafer placed inside a processing chamber by generating plasma with a processing gas supplied through a gas supply hole at an upper electrode (shower head) disposed inside the processing chamber, an interchangeable insert member is inserted at a gas passing hole at a gas supply unit to prevent entry of charged particles in the plasma generated in the processing chamber into the gas supply unit. This structure makes it possible to fully prevent the entry of charged particles in the plasma generated inside the processing chamber into the gas supply unit.
    • 在等离子体处理装置中,通过利用设置在处理室内的上部电极(喷淋头)上的供气孔供给的处理气体,产生等离子体,对位于处理室内部的半导体晶片进行等离子体处理,可互换插入部件 插入在气体供给单元处的气体通过孔处,以防止在处理室中产生的等离子体中的带电粒子进入气体供应单元。 这种结构使得可以完全防止在处理室内产生的等离子体中的带电粒子进入气体供应单元。