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1. 发明授权

US08173036B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08173036B2
公开(公告)日：2012-05-08
申请号：US11365676
申请日：2006-03-02
申请人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
发明人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32972 , H01L21/02063
摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.
摘要翻译：等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

2. 发明申请

US20060196847A1 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060196847A1
公开(公告)日：2006-09-07
申请号：US11365676
申请日：2006-03-02
申请人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
发明人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32972 , H01L21/02063
摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.
摘要翻译：等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

3. 发明授权

US4489067A Lipid reducing agents 失效
标题翻译：脂质还原剂
公开(公告)号：US4489067A
公开(公告)日：1984-12-18
申请号：US333865
申请日：1981-12-16
申请人： Fukuji Uenobe , Shin Matsuura , Nobuhiro Yamamoto , Masakazu Shioyama
发明人： Fukuji Uenobe , Shin Matsuura , Nobuhiro Yamamoto , Masakazu Shioyama
IPC分类号： A61K36/896 , A61K36/00 , A61P3/06 , A61K35/78
CPC分类号： A61K36/896
摘要： Substances which reduce the amount of lipids in serum and the liver are extracted from Yucca plants. These substances are capable of lowering high cholesterol and triglyceride values in serum as well as those in the livers of mammals and birds. A toxicity test in which these substances were administered to rats revealed that they have no acute toxicity.
摘要翻译： PCT No.PCT / JP81 / 00091 Sec。 371日期：1981年12月16日 102（e）1981年12月16日PCT日期1981年4月21日PCT。从丝兰植物中提取减少血清和肝脏中脂质量的物质。这些物质能够降低血清以及哺乳动物和鸟类肝脏中的高胆固醇和甘油三酯值。向大鼠施用这些物质的毒性试验表明它们没有急性毒性。

4. 发明授权

US09396964B2 Plasma processing apparatus, plasma processing method, and non-transitory computer-readable medium 有权
标题翻译：等离子体处理装置，等离子体处理方法和非暂时计算机可读介质
公开(公告)号：US09396964B2
公开(公告)日：2016-07-19
申请号：US13325757
申请日：2011-12-14
申请人： Shin Matsuura
发明人： Shin Matsuura
IPC分类号： B23K9/00 , G05D11/00 , E03B1/00 , H01L21/311 , G03F7/42 , H01J37/32
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32091 , H01J37/32816 , H01J37/32935
摘要： A plasma processing apparatus includes: a process chamber which accommodates a substrate to be processed; a lower electrode disposed in the process chamber; an upper electrode including an electrode plate that is detachable and discharges a process gas inside the form of shower into the process chamber; a gas supply unit including a central pipe and a edge pipe for supplying the process gas to the upper electrode; a first high frequency power source which applies high frequency power for plasma generation to the lower electrode; pressure indicators which detect pressures inside gas supply pipes; and a controller which measures a degree of consumption of the electrode plate based on the pressures detected by the pressure indicators and calculates a variation in process rate resulting due to the consumption of the electrode plate to adjust process conditions to resolve the variation in process rate.
摘要翻译：等离子体处理装置包括：处理室，其容纳待处理的基板; 设置在处理室中的下电极; 上部电极，其包括可拆卸的电极板，并将处于所述淋浴形式的处理气体排出到所述处理室中; 气体供给单元，其包括中心管和用于将处理气体供给到上部电极的边缘管; 向下电极施加用于等离子体产生的高频电力的第一高频电源; 检测供气管内压力的压力指示器; 以及控制器，其基于由压力指示器检测到的压力来测量电极板的消耗程度，并且计算由于电极板的消耗而导致的处理速率的变化，以调整处理条件以解决处理速率的变化。

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