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1. 发明授权

US08727708B2 Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component 有权
标题翻译：反射装置，连通管，排气泵，排气系统，清洁系统的方法，用于实施该方法的存储介质存储程序，基板处理装置和颗粒捕获部件
公开(公告)号：US08727708B2
公开(公告)日：2014-05-20
申请号：US13047370
申请日：2011-03-14
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
IPC分类号： F04D29/70 , F04D19/04
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.
摘要翻译：能够防止颗粒渗入处理室的反射装置。反射装置设置在连通管中。连通管允许基板处理装置和排气泵的处理室彼此连通。排气泵具有至少一个旋转叶片。反射装置包括至少一个反射表面。至少一个反射表面被定向到排气泵。

2. 发明授权

US07927066B2 Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component 有权
标题翻译：反射装置，连通管，排气泵，排气系统，清洁系统的方法，用于实施该方法的存储介质存储程序，基板处理装置和颗粒捕获部件
公开(公告)号：US07927066B2
公开(公告)日：2011-04-19
申请号：US11365682
申请日：2006-03-02
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
IPC分类号： F01D1/36 , F01D5/12 , F01D25/00 , F03B5/00 , F03B3/12 , F03B11/00 , F03D11/00
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.
摘要翻译：能够防止颗粒渗入处理室的反射装置。反射装置设置在连通管中。连通管允许基板处理装置和排气泵的处理室彼此连通。排气泵具有至少一个旋转叶片。反射装置包括至少一个反射表面。至少一个反射表面被定向到排气泵。

3. 发明申请

US20060257243A1 Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component 有权
标题翻译：反射装置，连通管，排气泵，排气系统，清洁系统的方法，用于实施该方法的存储介质存储程序，基板处理装置和颗粒捕获部件
公开(公告)号：US20060257243A1
公开(公告)日：2006-11-16
申请号：US11365682
申请日：2006-03-02
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
IPC分类号： F01D1/36
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.
摘要翻译：能够防止颗粒渗入处理室的反射装置。反射装置设置在连通管中。连通管允许基板处理装置和排气泵的处理室彼此连通。排气泵具有至少一个旋转叶片。反射装置包括至少一个反射表面。至少一个反射表面被定向到排气泵。

4. 发明申请

US20110162678A1 REFLECTING DEVICE, COMMUNICATING PIPE, EXHAUSTING PUMP, EXHAUST SYSTEM, METHOD FOR CLEANING THE SYSTEM, STORAGE MEDIUM STORING PROGRAM FOR IMPLEMENTING THE METHOD, SUBSTRATE PROCESSING APPARATUS, AND PARTICLE CAPTURING COMPONENT 有权
标题翻译：反射装置，通信管，排气泵，排气系统，清洁系统的方法，用于实施方法的储存中间储存程序，基板处理装置和颗粒捕获部件
公开(公告)号：US20110162678A1
公开(公告)日：2011-07-07
申请号：US13047370
申请日：2011-03-14
申请人： Tsuyoshi MORIYA , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
发明人： Tsuyoshi MORIYA , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
IPC分类号： F04D29/70 , F04D29/54 , B08B5/04
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.
摘要翻译：能够防止颗粒渗入处理室的反射装置。反射装置设置在连通管中。连通管允许基板处理装置和排气泵的处理室彼此连通。排气泵具有至少一个旋转叶片。反射装置包括至少一个反射表面。至少一个反射表面被定向到排气泵。

5. 发明申请

US20090136336A1 EXHAUST SYSTEM AND EXHAUSTING PUMP CONNECTED TO A PROCESSING CHAMBER OF A SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：排气系统和排气泵连接到基板加工装置的加工室
公开(公告)号：US20090136336A1
公开(公告)日：2009-05-28
申请号：US12347349
申请日：2008-12-31
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato
IPC分类号： F04D29/70
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.
摘要翻译：提供连接到基板处理装置的处理室的排气系统和排气泵。排气泵设置有至少一个旋转叶片和设置在处于旋转叶片的处理室侧的圆柱形进料部分。排气泵包括设置在进气部内部并具有至少一个朝向旋转叶片的反射面的反射装置。

6. 发明授权

US07837432B2 Exhaust system and exhausting pump connected to a processing chamber of a substrate processing apparatus 有权
标题翻译：排气系统和排气泵连接到基板处理装置的处理室
公开(公告)号：US07837432B2
公开(公告)日：2010-11-23
申请号：US12347349
申请日：2008-12-31
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato
IPC分类号： F01D1/36
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.
摘要翻译：提供连接到基板处理装置的处理室的排气系统和排气泵。排气泵设置有至少一个旋转叶片和设置在处于旋转叶片的处理室侧的圆柱形进料部分。排气泵包括设置在进气部内部并具有至少一个朝向旋转叶片的反射面的反射装置。

7. 发明授权

US07416635B2 Gas supply member and plasma processing apparatus 有权
标题翻译：供气构件和等离子体处理装置
公开(公告)号：US07416635B2
公开(公告)日：2008-08-26
申请号：US11365509
申请日：2006-03-02
申请人： Tsuyoshi Moriya , Takahiro Murakami
发明人： Tsuyoshi Moriya , Takahiro Murakami
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/50 , C23C16/455
CPC分类号： H01J37/3244 , C23F4/00
摘要： A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface to supply a gas through the gas holes to the inner space. An outer periphery portion of each gas hole at the planar surface has a slant surface formed to correspond to a flow of the gas injected through each gas hole. Further, the slant surface includes at least any one of a flat surface and a curved surface. An angle formed between the slant surface and the planar surface is equal to or greater than that formed between the planar surface and a distribution of the gas injected through each gas hole.
摘要翻译：气体供给构件设置在等离子体处理装置的腔室中，并且具有面向腔室的内部空间的平坦表面和在平坦表面中钻出的多个气体孔，以通过气体孔向内部空间供应气体。平坦表面处的每个气孔的外周部分具有与通过每个气孔注入的气体流相对应的倾斜表面。此外，倾斜表面包括平坦表面和弯曲表面中的至少任一个。在倾斜表面和平坦表面之间形成的角度等于或大于在平坦表面与通过每个气孔注入的气体的分布之间形成的角度。

8. 发明申请

US20060196604A1 Gas supply member and plasma processing apparatus 有权
标题翻译：供气构件和等离子体处理装置
公开(公告)号：US20060196604A1
公开(公告)日：2006-09-07
申请号：US11365509
申请日：2006-03-02
申请人： Tsuyoshi Moriya , Takahiro Murakami
发明人： Tsuyoshi Moriya , Takahiro Murakami
IPC分类号： C23F1/00
CPC分类号： H01J37/3244 , C23F4/00
摘要： A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface to supply a gas through the gas holes to the inner space. An outer periphery portion of each gas hole at the planar surface has a slant surface formed to correspond to a flow of the gas injected through each gas hole. Further, the slant surface includes at least any one of a flat surface and a curved surface. An angle formed between the slant surface and the planar surface is equal to or greater than that formed between the planar surface and a distribution of the gas injected through each gas hole.
摘要翻译：气体供给构件设置在等离子体处理装置的腔室中，并且具有面向腔室的内部空间的平坦表面和在平坦表面中钻出的多个气体孔，以通过气体孔向内部空间供应气体。平坦表面处的每个气孔的外周部分具有与通过每个气孔注入的气体流相对应的倾斜表面。此外，倾斜表面包括平坦表面和弯曲表面中的至少任一个。在倾斜表面和平坦表面之间形成的角度等于或大于在平坦表面与通过每个气孔注入的气体的分布之间形成的角度。

9. 发明授权

US07648782B2 Ceramic coating member for semiconductor processing apparatus 有权
标题翻译：用于半导体处理装置的陶瓷涂层构件
公开(公告)号：US07648782B2
公开(公告)日：2010-01-19
申请号：US11688565
申请日：2007-03-20
申请人： Yoshiyuki Kobayashi , Takahiro Murakami , Yoshio Harada , Junichi Takeuchi , Ryo Yamasaki , Keigo Kobayashi
发明人： Yoshiyuki Kobayashi , Takahiro Murakami , Yoshio Harada , Junichi Takeuchi , Ryo Yamasaki , Keigo Kobayashi
IPC分类号： H01L29/04 , H01L21/473 , H01L21/461 , H01L21/3105 , B01J3/08 , B01J19/08 , B05D3/06 , B05D1/06 , C08J7/18 , C23C4/10 , C01F17/00 , C04B35/505
CPC分类号： C23C4/02 , C23C4/18 , C23C28/042 , Y10T428/12
摘要： Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIb of the Periodic Table coated directed or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.
摘要翻译：改善设置在容器内部的部件和部件的电阻，例如用于在强腐蚀性环境中进行等离子体蚀刻处理的半导体处理装置。一种用于半导体处理装置的陶瓷涂层构件包括由元素周期表IIIb中元素的氧化物构成的多孔层，其被涂覆在金属或非金属基底的表面上或通过底涂层和二次重结晶通过高能量的照射处理如电子束和激光束在多孔层上形成的氧化物层。

10. 发明申请

US20070218302A1 CERAMIC COATING MEMBER FOR SEMICONDUCTOR PROCESSING APPARATUS 有权
标题翻译：用于半导体加工设备的陶瓷涂层组件
公开(公告)号：US20070218302A1
公开(公告)日：2007-09-20
申请号：US11688565
申请日：2007-03-20
申请人： Yoshiyuki Kobayashi , Takahiro Murakami , Yoshio Harada , Junichi Takeuchi , Ryo Yamasaki , Keigo Kobayashi
发明人： Yoshiyuki Kobayashi , Takahiro Murakami , Yoshio Harada , Junichi Takeuchi , Ryo Yamasaki , Keigo Kobayashi
IPC分类号： B32B15/04
CPC分类号： C23C4/02 , C23C4/18 , C23C28/042 , Y10T428/12
摘要： Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment.A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIa of the Periodic Table coated directly or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.
摘要翻译：改善设置在容器内部的部件和部件的电阻，例如用于在强腐蚀性环境中进行等离子体蚀刻处理的半导体处理装置。用于半导体处理装置的陶瓷涂层构件包括由直接涂覆的元素周期表Ⅲa族元素的氧化物或金属或非金属基材表面上的底涂层和二次再结晶的多孔层通过高能量的照射处理如电子束和激光束在多孔层上形成的氧化物层。

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