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1. 发明申请

US20060196847A1 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060196847A1
公开(公告)日：2006-09-07
申请号：US11365676
申请日：2006-03-02
申请人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
发明人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32972 , H01L21/02063
摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.
摘要翻译：等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

2. 发明授权

US08173036B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08173036B2
公开(公告)日：2012-05-08
申请号：US11365676
申请日：2006-03-02
申请人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
发明人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32972 , H01L21/02063
摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.
摘要翻译：等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

3. 发明授权

US07927066B2 Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component 有权
标题翻译：反射装置，连通管，排气泵，排气系统，清洁系统的方法，用于实施该方法的存储介质存储程序，基板处理装置和颗粒捕获部件
公开(公告)号：US07927066B2
公开(公告)日：2011-04-19
申请号：US11365682
申请日：2006-03-02
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
IPC分类号： F01D1/36 , F01D5/12 , F01D25/00 , F03B5/00 , F03B3/12 , F03B11/00 , F03D11/00
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.
摘要翻译：能够防止颗粒渗入处理室的反射装置。反射装置设置在连通管中。连通管允许基板处理装置和排气泵的处理室彼此连通。排气泵具有至少一个旋转叶片。反射装置包括至少一个反射表面。至少一个反射表面被定向到排气泵。

4. 发明申请

US20070209357A1 Reservoir built-in type actuator 有权
标题翻译：水箱内置式执行机构
公开(公告)号：US20070209357A1
公开(公告)日：2007-09-13
申请号：US11717306
申请日：2007-03-12
申请人： Tetsuji Sato , Masahito Kamada
发明人： Tetsuji Sato , Masahito Kamada
IPC分类号： F16D31/02
CPC分类号： F15B15/1466 , B64C13/504 , F15B1/265 , F15B7/006
摘要： A stand pipe is disposed so as to be fitted with the inner periphery surface of a piston rod with a hollow structure and a reservoir is incorporated into the inside of the stand pipe, whereby it becomes possible to reduce the size of an EHA device. Besides, since the reservoir is separated from both an annulus-side oil chamber and a bore-side oil chamber, a stable reservoir performance can be exhibited without being influenced by a fluid pressure resulting from an external force. Moreover, as a result of installation of the stand pipe, a difference between the amount of fluid required per unit stroke in the annulus-side oil chamber and that in the bore-side oil chamber becomes smaller, so that the required volume of the reservoir oil chamber can be reduced and it is possible to constitute an efficient EHA device with little difference between the energy consumption during compressing and that during extending. Consequently, it is possible to provide a reservoir built-in type actuator capable of exhibiting a stable performance without being influenced by an external force acting on the actuator and capable of attaining the reduction in size of the entire EHA device.
摘要翻译：立管设置成与具有中空结构的活塞杆的内周面配合，并且将储存器结合到立管的内部，从而可以减小EHA装置的尺寸。此外，由于储存器与环空侧油室和孔侧油室分离，所以可以显示稳定的储存性能，而不受外力所致的流体压力的影响。此外，由于安装立管，环形侧油室与孔侧油室的每单位行程所需的流体量之间的差异变小，所以容器的所需体积可以减少油室，并且可以构成在压缩期间和延伸期间的能量消耗之间几乎没有差异的有效的EHA装置。因此，可以提供能够显示稳定性能而不受作用在致动器上的外力的影响并且能够实现整个EHA装置的尺寸减小的储液器内置式致动器。

5. 发明申请

US20060257243A1 Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component 有权
标题翻译：反射装置，连通管，排气泵，排气系统，清洁系统的方法，用于实施该方法的存储介质存储程序，基板处理装置和颗粒捕获部件
公开(公告)号：US20060257243A1
公开(公告)日：2006-11-16
申请号：US11365682
申请日：2006-03-02
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato , Eiichi Sugawara , Shosuke Endoh , Masaki Fujimori
IPC分类号： F01D1/36
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.
摘要翻译：能够防止颗粒渗入处理室的反射装置。反射装置设置在连通管中。连通管允许基板处理装置和排气泵的处理室彼此连通。排气泵具有至少一个旋转叶片。反射装置包括至少一个反射表面。至少一个反射表面被定向到排气泵。

6. 外观设计

USD495008S1 India ink container 失效
公开(公告)号：USD495008S1
公开(公告)日：2004-08-24
申请号：US29182593
申请日：2003-05-30
申请人： Tetsuji Sato
设计人： Tetsuji Sato

7. 发明授权

US08083891B2 Plasma processing apparatus and the upper electrode unit 有权
标题翻译：等离子体处理装置和上电极单元
公开(公告)号：US08083891B2
公开(公告)日：2011-12-27
申请号：US12894803
申请日：2010-09-30
申请人： Tetsuji Sato
发明人： Tetsuji Sato
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/455 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/3244
摘要： In a plasma processing apparatus that executes plasma processing on a semiconductor wafer placed inside a processing chamber by generating plasma with a processing gas supplied through a gas supply hole at an upper electrode (shower head) disposed inside the processing chamber, an interchangeable insert member is inserted at a gas passing hole at a gas supply unit to prevent entry of charged particles in the plasma generated in the processing chamber into the gas supply unit. This structure makes it possible to fully prevent the entry of charged particles in the plasma generated inside the processing chamber into the gas supply unit.
摘要翻译：在等离子体处理装置中，通过利用设置在处理室内的上部电极（喷淋头）上的供气孔供给的处理气体，产生等离子体，对位于处理室内部的半导体晶片进行等离子体处理，可互换插入部件插入在气体供给单元处的气体通过孔处，以防止在处理室中产生的等离子体中的带电粒子进入气体供应单元。这种结构使得可以完全防止在处理室内产生的等离子体中的带电粒子进入气体供应单元。

8. 发明授权

US07837432B2 Exhaust system and exhausting pump connected to a processing chamber of a substrate processing apparatus 有权
标题翻译：排气系统和排气泵连接到基板处理装置的处理室
公开(公告)号：US07837432B2
公开(公告)日：2010-11-23
申请号：US12347349
申请日：2008-12-31
申请人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato
发明人： Tsuyoshi Moriya , Takahiro Murakami , Yoshiyuki Kobayashi , Tetsuji Sato
IPC分类号： F01D1/36
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y10T137/794
摘要： An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.
摘要翻译：提供连接到基板处理装置的处理室的排气系统和排气泵。排气泵设置有至少一个旋转叶片和设置在处于旋转叶片的处理室侧的圆柱形进料部分。排气泵包括设置在进气部内部并具有至少一个朝向旋转叶片的反射面的反射装置。

9. 发明申请

US20080006207A1 HEAT-TRANSFER STRUCTURE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：传热结构和基板加工设备
公开(公告)号：US20080006207A1
公开(公告)日：2008-01-10
申请号：US11774420
申请日：2007-07-06
申请人： Masaaki Miyagawa , Tetsuji Sato
发明人： Masaaki Miyagawa , Tetsuji Sato
IPC分类号： C23C4/00 , C23C16/44 , F28D21/00
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/2001
摘要： A heat-transfer structure which can keep a consumable component at a temperature of 225° C. or less during etching of a substrate. The heat-transfer structure is disposed in a chamber where plasma processing is performed on a wafer as the substrate under a reduced pressure. The heat-transfer structure is comprised of a focus ring having an exposed surface exposed to plasma, a susceptor and an electrostatic chuck that cool the consumable component, and a heat-transfer sheet interposed between the focus ring and the electrostatic chuck and made of a gel-like material. The ratio of hardness of the heat-transfer sheet expressed in Asker C to thermal conductivity of the heat-transfer sheet expressed in W/m·K is less than 20.
摘要翻译：一种传热结构，其可以在蚀刻基板期间将可消耗部件保持在225℃或更低的温度。传热结构设置在作为基板的减压下进行等离子体处理的室中。传热结构包括具有暴露于等离子体的暴露表面的聚焦环，冷却可消耗部件的基座和静电卡盘以及插入在聚焦环和静电卡盘之间的热转印片，并由凝胶状材料。以Asker C表示的热转印片的硬度与以W / m·K表示的热转印片的导热率的比例小于20。

10. 发明授权

US5767396A Method and device for measuring fuel injection timing 失效
标题翻译：测量燃油喷射正时的方法和装置
公开(公告)号：US5767396A
公开(公告)日：1998-06-16
申请号：US814028
申请日：1997-03-10
申请人： Ryuji Okamoto , Tetsuji Sato , Kazumi Umeki , Takeshi Takahashi , Naoyuki Tsuzuki , Shunsuke Yasunishi , Koji Kitano , Takashi Yamamoto
发明人： Ryuji Okamoto , Tetsuji Sato , Kazumi Umeki , Takeshi Takahashi , Naoyuki Tsuzuki , Shunsuke Yasunishi , Koji Kitano , Takashi Yamamoto
IPC分类号： G01M15/04 , F02B1/04 , F02D41/04 , F02D41/34 , F02D41/40 , F02D45/00 , F02M65/00 , G01M15/00
CPC分类号： F02D41/345 , F02B1/04 , Y02T10/44
摘要： An injection timing measuring method and device require a reduced amount of time for calculation. A reference position signal is generated at a predetermined crank angle within the range of 30.degree. CA to 90.degree. CA prior to TDC. Crank angle signals from a crank angle sensor are used as main measuring increments to measure a period starting from generation of the reference position signal and ending upon generation of an injection signal by a lift sensor provided in an injection valve unit, and another period starting from generation of the reference position signal and ending upon generation of a TDC signal. The injection timing relative to the TDC is provided as a difference between the two periods. Each period is precisely measured by counting crank angle signals generated within the period and by determining the remaining duration from the last-counted signal to generation of the injection or TDC signal as a fraction of the crank angle signal interval. Measurement of the injection period starts from an injection start time at which the level of the injection signal exceeds a criterion value, and ends upon an injection end time at which the level falls below the criterion value.
摘要翻译：注射定时测量方法和装置需要减少计算时间。在TDC之前的30°C〜90°C的范围内，以规定的曲柄角产生基准位置信号。来自曲柄角传感器的曲柄角信号用作主要的测量增量，以测量从基准位置信号的产生开始的周期，并且由设置在喷射阀单元中的提升传感器产生喷射信号结束，并且从生成参考位置信号，并在TDC信号的产生结束时结束。相对于TDC的喷射定时被提供为两个周期之间的差。通过计算在该周期内产生的曲柄角信号并且通过确定从上次计数的信号到产生注射或TDC信号的剩余持续时间作为曲柄角信号间隔的一部分来精确地测量每个周期。喷射期间的测量从喷射信号的水平超过标准值的喷射开始时刻开始，并且在水平低于标准值的喷射结束时间结束。

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