专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070056150A1 APPARATUS AND METHODS FOR PREVENTING ROTATIONAL SLIPPAGE BETWEEN A VERTICAL SHAFT AND A SUPPORT STRUCTURE FOR A SEMICONDUCTOR WAFER HOLDER 审中-公开
标题翻译：用于防止垂直轴和用于半导体波形支架的支撑结构之间的旋转滑移的装置和方法
公开(公告)号：US20070056150A1
公开(公告)日：2007-03-15
申请号：US11557037
申请日：2006-11-06
申请人： Thomas Weeks , Lewis Bernett , Loren Jacobs , Eric Wood , Michael Halpin
发明人： Thomas Weeks , Lewis Bernett , Loren Jacobs , Eric Wood , Michael Halpin
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/68728 , C23C16/4584 , H01L21/68792
摘要： A substrate support assembly positively secures a substrate holder support to a rotation shaft with respect to rotationally applied forces. A substrate holder support is configured to have an opening in a socket into which, when aligned with an indentation in the rotational shaft to form a passage, a retaining member is removably inserted to engage both the socket opening and the shaft indentation. Methods of rotating a substrate while minimizing rotational slippage of the substrate holder support with respect to the shaft are also provided.
摘要翻译：衬底支撑组件相对于旋转施加的力将衬底保持器支撑件主动地固定到旋转轴。衬底保持器支撑件构造成在插座中具有开口，当与旋转轴中的凹槽对准以形成通道时，保持构件可移除地插入到该插座中以与插座开口和轴凹部接合。还提供了使衬底旋转同时使衬底保持器支撑件相对于轴的旋转滑动最小化的方法。

2. 发明申请

US20050166849A1 Apparatus and methods for preventing rotational slippage between a vertical shaft and a support structure for a semiconductor wafer holder 有权
标题翻译：用于防止用于半导体晶片保持器的垂直轴和支撑结构之间的旋转滑动的装置和方法
公开(公告)号：US20050166849A1
公开(公告)日：2005-08-04
申请号：US10769549
申请日：2004-01-30
申请人： Thomas Weeks , Lewis Barnett , Loren Jacobs , Eric Wood , Michael Halpin
发明人： Thomas Weeks , Lewis Barnett , Loren Jacobs , Eric Wood , Michael Halpin
IPC分类号： H01L21/683 , C23C16/00 , C23C16/458 , H01L21/68 , H01L21/687
CPC分类号： H01L21/68728 , C23C16/4584 , H01L21/68792 , Y10T29/41
摘要： A substrate support assembly positively secures a substrate holder support to a rotation shaft with respect to rotationally applied forces. A substrate holder support is configured to have an opening in a socket into which, when aligned with an indentation in the rotational shaft to form a passage, a retaining member is removably inserted to engage both the socket opening and the shaft indentation. Methods of rotating a substrate while minimizing rotational slippage of the substrate holder support with respect to the shaft are also provided.
摘要翻译：衬底支撑组件相对于旋转施加的力将衬底保持器支撑件主动地固定到旋转轴。衬底保持器支撑件构造成在插座中具有开口，当与旋转轴中的凹槽对准以形成通道时，保持构件可移除地插入到该插座中以与插座开口和轴凹部接合。还提供了使衬底旋转同时使衬底保持器支撑件相对于轴的旋转滑动最小化的方法。

3. 发明申请

US20070131173A1 WAFER SUPPORT SYSTEM 失效
标题翻译： WAFER支持系统
公开(公告)号：US20070131173A1
公开(公告)日：2007-06-14
申请号：US11668409
申请日：2007-01-29
申请人： Michael Halpin , Mark Hawkins , Derrick Foster , Robert Vyne , John Wengert , Cornelius van der Jeugd , Loren Jacobs , Frank Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason Layton
发明人： Michael Halpin , Mark Hawkins , Derrick Foster , Robert Vyne , John Wengert , Cornelius van der Jeugd , Loren Jacobs , Frank Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason Layton
IPC分类号： C23C16/00
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
摘要： A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.
摘要翻译：一种晶片支撑系统，其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。吹扫气体被引入到基座的底部，并且穿过气体流动通道，以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。气体通过中空驱动轴输送到基座下方的多臂感受器支架中。支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。气体通道被布置成在散布在晶片之下之前加热吹扫气体。可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。

4. 发明授权

US06325858B1 Long life high temperature process chamber 有权
标题翻译：长寿命高温加工室
公开(公告)号：US06325858B1
公开(公告)日：2001-12-04
申请号：US09184490
申请日：1998-11-02
申请人： John F. Wengert , Ivo Raaijmakers , Mike Halpin , Loren Jacobs , Michael J. Meyer , Frank van Bilsen , Matt Goodman , Eric Barrett , Eric Wood , Blake Samuels
发明人： John F. Wengert , Ivo Raaijmakers , Mike Halpin , Loren Jacobs , Michael J. Meyer , Frank van Bilsen , Matt Goodman , Eric Barrett , Eric Wood , Blake Samuels
IPC分类号： C23C1600
CPC分类号： H01L21/67115 , C23C16/4401 , C23C16/481 , G01K1/12 , G01K7/04
摘要： A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.
摘要翻译：公开了一种大致水平取向的石英CVD室，其具有邻近中心定位的基座和周围温度控制环的前室和后室分隔板，其将室分成上部和下部区域。公开了CVD工艺组件的寿命的改善和相关的生产率改进。用于吸引一些未使用的反应气体的吸气板位于大致平行于分隔板和上室壁之间并间隔开的基座的下游。该吸气板还使得室壁上的沉积最小化并且提高了清洁步骤的效率。辐射元件也位于腔室的侧壁附近以加热冷却器室壁区域。吸气板和再辐射元件加上感受器和环绕环均由固体化学气相沉积SiC制成，以提高腔室的使用寿命。此外，靠近基座的热电偶设置有SiC护套，以使得热电偶能够承受比石英护套更多的工艺循环。可以在整个室中的石英组件上提供SiC护罩以保护石英免于失透。通过减少停机时间和减少处理循环的清洗步骤时间来改善产量。

5. 发明授权

US08616765B2 Thermocouple 有权
标题翻译：热电偶
公开(公告)号：US08616765B2
公开(公告)日：2013-12-31
申请号：US13563274
申请日：2012-07-31
申请人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
发明人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
IPC分类号： G05D23/00 , G01K7/02
CPC分类号： G01K7/04 , C23C16/46 , G01K13/00
摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.
摘要翻译：描述了用于半导体加工反应的热电偶。热电偶包括具有测量尖端和在相对端的开口的护套。接收第一线和第二线的一部分的支撑构件被容纳在护套内。第一和第二线形成在测量尖端处接触鞘的内表面的接合点。间隔构件固定在护套的开口处并接收支撑构件。间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

6. 发明授权

US07874726B2 Thermocouple 有权
标题翻译：热电偶
公开(公告)号：US07874726B2
公开(公告)日：2011-01-25
申请号：US12121085
申请日：2008-05-15
申请人： Loren Jacobs , Mike Halpin
发明人： Loren Jacobs , Mike Halpin
IPC分类号： G01K1/00 , G01K7/00
CPC分类号： G01K1/08 , G01K7/02 , G01K7/04
摘要： A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.
摘要翻译：一种具有支撑管的热电偶，其构造成接收一对异种金属线。热电偶的一对导线连接在邻近支撑管一端的连接处。所述热电偶还包括附接到所述支撑管的相对端的盖，其中所述盖接收所述一对电线的自由端。该盖允许一对电线自由地平移以适应一对电线相对于支撑管的热膨胀和收缩的热膨胀和收缩的差异。

7. 发明申请

US20100145547A1 THERMOCOUPLE 有权
标题翻译：热电偶
公开(公告)号：US20100145547A1
公开(公告)日：2010-06-10
申请号：US12330096
申请日：2008-12-08
申请人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
发明人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
IPC分类号： G05D23/00 , G01K7/02
CPC分类号： G01K7/04 , C23C16/46 , G01K13/00
摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.
摘要翻译：描述了用于半导体加工反应的热电偶。热电偶包括具有测量尖端和在相对端的开口的护套。接收第一线和第二线的一部分的支撑构件被容纳在护套内。第一和第二线形成在测量尖端处接触鞘的内表面的接合点。间隔构件固定在护套的开口处并接收支撑构件。间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

8. 发明授权

US07993057B2 Redundant temperature sensor for semiconductor processing chambers 有权
标题翻译：用于半导体处理室的冗余温度传感器
公开(公告)号：US07993057B2
公开(公告)日：2011-08-09
申请号：US11961671
申请日：2007-12-20
申请人： Ravinder Aggarwal , Mark Kleshock , Loren Jacobs
发明人： Ravinder Aggarwal , Mark Kleshock , Loren Jacobs
IPC分类号： G01K7/00
CPC分类号： G01K7/04 , G01K13/00 , G01K15/00 , H01L21/67248
摘要： Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.
摘要翻译：提供用于测量半导体处理室中的温度的系统。实施例提供了一种多结热电偶，其包括第一接头和第二接头，其定位成测量基板的基本相同部分处的温度。控制器可以检测第一连接点，第二接头，从第一接头延伸的第一线对或从第二接头延伸的第二线对的故障。控制器期望地通过选择第二连接点和第二线对来响应检测到的第一结或第一线对的故障。相反，控制器期望地通过选择第一连接点和第一线对来响应检测到的第二连接点或第二线对的故障。尽管本文教导的系统可能允许精确和基本上不间断的温度测量，尽管热电偶中的接头或线对失效。

9. 发明申请

US20090159000A1 REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS 有权
标题翻译：用于半导体处理器的冗余温度传感器
公开(公告)号：US20090159000A1
公开(公告)日：2009-06-25
申请号：US11961671
申请日：2007-12-20
申请人： Ravinder Aggarwal , Mark Kleshock , Loren Jacobs
发明人： Ravinder Aggarwal , Mark Kleshock , Loren Jacobs
IPC分类号： B05C11/00 , G01K7/02
CPC分类号： G01K7/04 , G01K13/00 , G01K15/00 , H01L21/67248
摘要： Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.
摘要翻译：提供用于测量半导体处理室中的温度的系统。实施例提供了一种多结热电偶，其包括第一接头和第二接头，其定位成测量基板的基本相同部分处的温度。控制器可以检测第一连接点，第二接头，从第一接头延伸的第一线对或从第二接头延伸的第二线对的故障。控制器期望地通过选择第二连接点和第二线对来响应检测到的第一结或第一线对的故障。相反，控制器期望地通过选择第一连接点和第一线对来响应检测到的第二连接点或第二线对的故障。尽管本文教导的系统可能允许精确和基本上不间断的温度测量，尽管热电偶中的接头或线对失效。

10. 发明授权

US06709267B1 Substrate holder with deep annular groove to prevent edge heat loss 有权
标题翻译：底座支架具有深环形槽，防止边缘热损失
公开(公告)号：US06709267B1
公开(公告)日：2004-03-23
申请号：US10331444
申请日：2002-12-27
申请人： Mark Hawkins , Matthew G. Goodman , Loren Jacobs
发明人： Mark Hawkins , Matthew G. Goodman , Loren Jacobs
IPC分类号： F27D500
CPC分类号： F27D99/0001 , C23C16/4585 , C30B25/12 , C30B31/14 , F27B17/0025 , F27D5/0037 , H01L21/67103 , Y10S414/135
摘要： A substrate holder for processing a semiconductor substrate includes a deep, generally vertical annular groove configured to impede the radial flow of heat within the holder and reduce heat loss from the annular side edge of the holder. The holder includes one or more support elements, such as a flat contiguous surface or a plurality of protrusions defined by intersecting grooves. The one or more support elements are configured to support a substrate a particular size in a support plane defined by the one or more support elements. The groove is configured to surround an outer edge of the substrate when the substrate is supported on the one or more support elements. In a preferred embodiment, the groove has a depth of at least 25% of the thickness of the substrate holder.
摘要翻译：用于处理半导体衬底的衬底保持器包括深的大致垂直的环形槽，其被构造成阻止保持器内的热量的径向流动并减少从保持器的环形侧边缘的热损失。保持器包括一个或多个支撑元件，例如平坦的邻接表面或由相交槽限定的多个突起。一个或多个支撑元件构造成在由一个或多个支撑元件限定的支撑平面中支撑特定尺寸的基板。当衬底被支撑在一个或多个支撑元件上时，凹槽被构造成围绕衬底的外边缘。在优选实施例中，凹槽的深度至少为衬底保持器的厚度的25％。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式