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1. 发明申请

US20090147819A1 CALIBRATION OF TEMPERATURE CONTROL SYSTEM FOR SEMICONDUCTOR PROCESSING CHAMBER 有权
标题翻译：半导体加工室温度控制系统的校准
公开(公告)号：US20090147819A1
公开(公告)日：2009-06-11
申请号：US12273440
申请日：2008-11-18
申请人： MATTHEW G. GOODMAN , MARK HAWKINS , RAVINDER AGGARWAL , MICHAEL GIVENS , ERIC HILL , GREGORY BARTLETT
发明人： MATTHEW G. GOODMAN , MARK HAWKINS , RAVINDER AGGARWAL , MICHAEL GIVENS , ERIC HILL , GREGORY BARTLETT
IPC分类号： G01K15/00
CPC分类号： G01K15/00
摘要： Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.
摘要翻译：用于校准气相沉积室中的温度控制系统的方法和系统。温度传感器感测半导体处理室内的温度并产生输出信号。温度控制系统通过基于输出信号控制加热装置来控制室温度。一种方法包括指示控制系统目标设定点温度，并通过气相沉积工艺将一层材料沉积在腔室的表面上。在沉积层时测量该层的性质的变化，已知随着层的厚度周期性变化的性质增加。允许测量的特性循环变化一个或多个循环。如果一个或多个循环的时间段与与设定点温度相关联的期望时间段之间存在差异，则基于该差异来调整温度控制系统。

2. 发明申请

US20050064684A1 Process for deposition of semiconductor films 有权
标题翻译：半导体膜沉积工艺
公开(公告)号：US20050064684A1
公开(公告)日：2005-03-24
申请号：US10963043
申请日：2004-10-12
申请人： Michael Todd , Mark Hawkins
发明人： Michael Todd , Mark Hawkins
IPC分类号： C23C16/24 , C23C16/02 , C23C16/42 , C30B25/02 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/316 , H01L21/331 , H01L21/337 , H01L21/425 , H01L21/469 , H01L21/8238 , H01L27/092 , H01L29/51 , H01L29/737 , H01L29/78 , H01L31/18 , H01L31/20 , H01L21/36
CPC分类号： C23C16/0272 , B82Y10/00 , B82Y30/00 , C23C16/22 , C23C16/24 , C23C16/30 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/56 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/0243 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L21/02667 , H01L21/2257 , H01L21/28035 , H01L21/28044 , H01L21/28194 , H01L21/28525 , H01L21/28556 , H01L21/3185 , H01L21/32055 , H01L28/84 , H01L29/127 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/66242 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S438/933
摘要： Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
摘要翻译：化学气相沉积方法利用化学前体，其允许薄膜的沉积在质量传递限制状态或附近进行。这些方法具有高的沉积速率，但是与使用常规化学前体制备的膜相比，在组成和厚度方面产生更均匀的膜。在优选的实施方案中，使用较高级的硅烷来沉积在诸如晶体管栅电极的各种应用中可用于半导体工业中的含硅的薄膜。

3. 发明授权

US07648579B2 Substrate support system for reduced autodoping and backside deposition 有权
标题翻译：用于减少自动掺杂和背面沉积的基板支撑系统
公开(公告)号：US07648579B2
公开(公告)日：2010-01-19
申请号：US11057111
申请日：2005-02-11
申请人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
发明人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
IPC分类号： C23C16/458 , C23C16/00 , H01L21/306
CPC分类号： H01L21/68735 , H01J37/32871 , H01L21/67028
摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).
摘要翻译：衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。向上输送的气体流入基板和基板支架之间的间隙。根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件（通过从扩散的掺杂剂原子远离衬底背面来抑制自掺杂）。

4. 发明授权

US07585752B2 Process for deposition of semiconductor films 有权
标题翻译：半导体膜沉积工艺
公开(公告)号：US07585752B2
公开(公告)日：2009-09-08
申请号：US10963043
申请日：2004-10-12
申请人： Michael A. Todd , Mark Hawkins
发明人： Michael A. Todd , Mark Hawkins
IPC分类号： C23C16/24
CPC分类号： C23C16/0272 , B82Y10/00 , B82Y30/00 , C23C16/22 , C23C16/24 , C23C16/30 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/56 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/0243 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L21/02667 , H01L21/2257 , H01L21/28035 , H01L21/28044 , H01L21/28194 , H01L21/28525 , H01L21/28556 , H01L21/3185 , H01L21/32055 , H01L28/84 , H01L29/127 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/66242 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S438/933
摘要： Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
摘要翻译：化学气相沉积方法利用化学前体，其允许薄膜的沉积在质量传递限制状态或附近进行。这些方法具有高的沉积速率，但是与使用常规化学前体制备的膜相比，在组成和厚度方面产生更均匀的膜。在优选的实施方案中，使用较高级的硅烷来沉积在诸如晶体管栅电极的各种应用中可用于半导体工业中的含硅的薄膜。

5. 发明申请

US20070131173A1 WAFER SUPPORT SYSTEM 失效
标题翻译： WAFER支持系统
公开(公告)号：US20070131173A1
公开(公告)日：2007-06-14
申请号：US11668409
申请日：2007-01-29
申请人： Michael Halpin , Mark Hawkins , Derrick Foster , Robert Vyne , John Wengert , Cornelius van der Jeugd , Loren Jacobs , Frank Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason Layton
发明人： Michael Halpin , Mark Hawkins , Derrick Foster , Robert Vyne , John Wengert , Cornelius van der Jeugd , Loren Jacobs , Frank Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason Layton
IPC分类号： C23C16/00
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
摘要： A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.
摘要翻译：一种晶片支撑系统，其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。吹扫气体被引入到基座的底部，并且穿过气体流动通道，以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。气体通过中空驱动轴输送到基座下方的多臂感受器支架中。支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。气体通道被布置成在散布在晶片之下之前加热吹扫气体。可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。

6. 发明申请

US20060185096A1 Automated switch scanning matrix for obtaining user input 审中-公开
标题翻译：自动切换扫描矩阵，用于获取用户输入
公开(公告)号：US20060185096A1
公开(公告)日：2006-08-24
申请号：US11061934
申请日：2005-02-21
申请人： Howell Chiles , Mark Hawkins
发明人： Howell Chiles , Mark Hawkins
IPC分类号： D06F33/02
CPC分类号： D06F33/02 , D06F58/28 , H03K17/002
摘要： This invention is an automated switch scanning matrix for obtaining user input. The invention comprises an integrated circuit with an output register and an input register, the output register is operatively connected to one or more user switches or encoders and the switches or encoders are further operatively connected to the integrated circuit input register. A voltage is pulsed from the output register of the integrated circuit which then flows through closed contacts of the switches or encoders in the switching matrix and is then detected at the input registers of the integrated circuit. The switch position inputs are saved in a switch save register. The integrated circuit sets an interrupt bit if any of the switch positions in the matrix have changed. This, in turn, causes the microcontroller to read the switch save registers thereby saving time for the microcontroller by not having to continually read the switch inputs.
摘要翻译：本发明是用于获得用户输入的自动切换扫描矩阵。本发明包括具有输出寄存器和输入寄存器的集成电路，输出寄存器可操作地连接到一个或多个用户开关或编码器，并且开关或编码器进一步可操作地连接到集成电路输入寄存器。电压从集成电路的输出寄存器脉冲，然后流过开关矩阵中的开关或编码器的闭合触点，然后在集成电路的输入寄存器处被检测。开关位置输入保存在开关保存寄存器中。如果矩阵中的任何开关位置发生变化，集成电路将设置一个中断位。这又导致微控制器读取开关保存寄存器，从而通过不必连续地读取开关输入来节省微控制器的时间。

7. 发明授权

US11085112B2 Susceptor with ring to limit backside deposition 有权
公开(公告)号：US11085112B2
公开(公告)日：2021-08-10
申请号：US13284231
申请日：2011-10-28
申请人： Mark Hawkins , Matthew G. Goodman , Shawn Thomas
发明人： Mark Hawkins , Matthew G. Goodman , Shawn Thomas
IPC分类号： C23C16/455 , H01L21/687 , C23C16/458 , H01L21/67
摘要： A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

8. 发明授权

US08360001B2 Process for deposition of semiconductor films 有权
公开(公告)号：US08360001B2
公开(公告)日：2013-01-29
申请号：US12504269
申请日：2009-07-16
申请人： Michael A. Todd , Mark Hawkins
发明人： Michael A. Todd , Mark Hawkins
IPC分类号： C23C16/52 , C23C16/22 , C23C16/24 , C23C16/44 , C23C16/00
CPC分类号： C23C16/0272 , B82Y10/00 , B82Y30/00 , C23C16/22 , C23C16/24 , C23C16/30 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/56 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/0243 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L21/02667 , H01L21/2257 , H01L21/28035 , H01L21/28044 , H01L21/28194 , H01L21/28525 , H01L21/28556 , H01L21/3185 , H01L21/32055 , H01L28/84 , H01L29/127 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/66242 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S438/933
摘要： Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

9. 发明申请

US20100012030A1 Process for Deposition of Semiconductor Films 有权
标题翻译：半导体膜沉积工艺
公开(公告)号：US20100012030A1
公开(公告)日：2010-01-21
申请号：US12504269
申请日：2009-07-16
申请人： Michael A. Todd , Mark Hawkins
发明人： Michael A. Todd , Mark Hawkins
IPC分类号： C23C16/52 , C23C16/24 , C23C16/46
CPC分类号： C23C16/0272 , B82Y10/00 , B82Y30/00 , C23C16/22 , C23C16/24 , C23C16/30 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/56 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/0243 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L21/02667 , H01L21/2257 , H01L21/28035 , H01L21/28044 , H01L21/28194 , H01L21/28525 , H01L21/28556 , H01L21/3185 , H01L21/32055 , H01L28/84 , H01L29/127 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/66242 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S438/933
摘要： Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
摘要翻译：化学气相沉积方法利用化学前体，其允许薄膜的沉积在质量传递限制状态或附近进行。这些方法具有高的沉积速率，但是与使用常规化学前体制备的膜相比，在组成和厚度方面产生更均匀的膜。在优选的实施方案中，使用较高级的硅烷来沉积在诸如晶体管栅电极的各种应用中可用于半导体工业中的含硅的薄膜。

10. 发明申请

US20050193952A1 Substrate support system for reduced autodoping and backside deposition 有权
标题翻译：用于减少自动掺杂和背面沉积的基板支撑系统
公开(公告)号：US20050193952A1
公开(公告)日：2005-09-08
申请号：US11057111
申请日：2005-02-11
申请人： Matt Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory Bartlett , Joseph Italiano , Bob Haro
发明人： Matt Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory Bartlett , Joseph Italiano , Bob Haro
IPC分类号： C23C16/00 , C23C16/458 , C30B25/12 , C30B25/14 , H01L21/00 , H01L21/687
CPC分类号： H01L21/68735 , H01J37/32871 , H01L21/67028
摘要： A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.
摘要翻译：衬底支撑系统包括相对薄的圆形衬底保持器，其具有在其顶表面和底表面之间延伸的多个通道。衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片，其构造成支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。当基板保持器旋转时，叶片可以成角度以抵抗反应气体的背面沉积。中空的支撑构件为衬底保持器的下侧提供支撑。中空支撑构件被构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器的一个或多个通道中。向上输送的气体流入基板和基板支架之间的间隙。根据本发明的实施例，间隙中的气体然后可以（1）围绕衬底边缘向外和向上流动，或者（2）向下通过衬底保持器的通道（如果有的话），其不会引导回到空心支持会员在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。通过通道向下流动的气体不会返回到支撑构件，有利地通过从扩散的掺杂剂原子远离衬底正面来扫除自发掺杂。在一个实施例中，支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。在另一个实施例中，支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。在另一个实施例中，支撑构件包括碗形或杯状结构，其将气体向上输送到除了一个或多个通道中的所有通道中。

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