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1. 发明授权

US06325858B1 Long life high temperature process chamber 有权
标题翻译：长寿命高温加工室
公开(公告)号：US06325858B1
公开(公告)日：2001-12-04
申请号：US09184490
申请日：1998-11-02
申请人： John F. Wengert , Ivo Raaijmakers , Mike Halpin , Loren Jacobs , Michael J. Meyer , Frank van Bilsen , Matt Goodman , Eric Barrett , Eric Wood , Blake Samuels
发明人： John F. Wengert , Ivo Raaijmakers , Mike Halpin , Loren Jacobs , Michael J. Meyer , Frank van Bilsen , Matt Goodman , Eric Barrett , Eric Wood , Blake Samuels
IPC分类号： C23C1600
CPC分类号： H01L21/67115 , C23C16/4401 , C23C16/481 , G01K1/12 , G01K7/04
摘要： A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.
摘要翻译：公开了一种大致水平取向的石英CVD室，其具有邻近中心定位的基座和周围温度控制环的前室和后室分隔板，其将室分成上部和下部区域。公开了CVD工艺组件的寿命的改善和相关的生产率改进。用于吸引一些未使用的反应气体的吸气板位于大致平行于分隔板和上室壁之间并间隔开的基座的下游。该吸气板还使得室壁上的沉积最小化并且提高了清洁步骤的效率。辐射元件也位于腔室的侧壁附近以加热冷却器室壁区域。吸气板和再辐射元件加上感受器和环绕环均由固体化学气相沉积SiC制成，以提高腔室的使用寿命。此外，靠近基座的热电偶设置有SiC护套，以使得热电偶能够承受比石英护套更多的工艺循环。可以在整个室中的石英组件上提供SiC护罩以保护石英免于失透。通过减少停机时间和减少处理循环的清洗步骤时间来改善产量。

2. 发明授权

US06692576B2 Wafer support system 失效
标题翻译：晶圆支撑系统
公开(公告)号：US06692576B2
公开(公告)日：2004-02-17
申请号：US10243579
申请日：2002-09-13
申请人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
发明人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
IPC分类号： C23L1600
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
摘要翻译：一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。气体通过中空驱动轴输送到基座下方的多臂感受器支架中。支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。气体通道被布置成在散布在晶片之下之前加热吹扫气体。可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

3. 发明授权

US06093252A Process chamber with inner support 失效
标题翻译：具有内部支撑的过程室
公开(公告)号：US06093252A
公开(公告)日：2000-07-25
申请号：US637616
申请日：1996-04-25
申请人： John F. Wengert , Loren R. Jacobs , Michael W. Halpin , Derrick W. Foster , Cornelius A. van der Jeugd , Robert M. Vyne , Mark R. Hawkins
发明人： John F. Wengert , Loren R. Jacobs , Michael W. Halpin , Derrick W. Foster , Cornelius A. van der Jeugd , Robert M. Vyne , Mark R. Hawkins
IPC分类号： B01J3/00 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/48 , H01L21/00 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： B01J3/006 , C23C16/44 , C23C16/455 , C23C16/45502 , C23C16/46 , C23C16/481 , H01L21/67115 , H01L21/68735 , H01L21/68785
摘要： An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.
摘要翻译：改进的化学气相沉积反应室具有内部支撑板以实现减压处理。该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。中央水平支撑板设置在腔室的两个侧向侧轨之间。在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。温度补偿环设置在基座周围并由连接到支撑板的手指支撑。温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。环可以比上游更远离基座延伸下游。可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

4. 发明授权

US6086680A Low-mass susceptor 失效
标题翻译：低质量感受器
公开(公告)号：US6086680A
公开(公告)日：2000-07-11
申请号：US621627
申请日：1996-03-26
申请人： Derrick W. Foster , Cornelius A. van der Jeugd , John F. Wengert
发明人： Derrick W. Foster , Cornelius A. van der Jeugd , John F. Wengert
IPC分类号： H01L21/205 , C23C16/458 , H01L21/26 , H01L21/687 , C23C16/00
CPC分类号： H01L21/6875 , C23C16/4581 , H01L21/68757 , H01L21/68785
摘要： A wafer susceptor for semiconductor processing devices, having a thermal mass which is close to that of the wafer. The similarity between the thermal masses of the susceptor and wafer enables a higher throughput and reduces temperature uniformities across the wafer. The low-mass susceptor may be made of a solid, thin disk with or without a central wafer support recess. A wafer temperature sensing aperture may be provided in the center of the susceptor. Alternatively, a low-mass susceptor is formed with an open-celled silicon carbide foam, with or without a thin skin of solid silicon carbide on the top forming a wafer support surface, or completely encapsulating the open-celled foam. The wafer is preferably supported on a plurality of pins extending upward from the susceptor. In a third embodiment, an ultra low-mass susceptor is formed as a ring with a central throughbore and a surrounding wafer support shelf below an outer ledge.
摘要翻译：一种用于半导体处理器件的晶片基座，具有接近晶片的热质量。感受器和晶片的热质量之间的相似性使得能够实现更高的生产量并降低整个晶片的温度均匀性。低质量基座可以由具有或不具有中央晶片支撑凹部的实心薄盘制成。可以在基座的中心设置晶片温度感测孔。或者，低质量基座形成有开孔碳化硅泡沫，顶部形成有或没有固体碳化硅的薄皮，形成晶片支撑表面，或完全封装开孔泡沫。晶片优选地支撑在从基座向上延伸的多个销上。在第三实施例中，超低质量基座形成为具有中央通孔和在外凸缘下方的周围晶片支撑架的环。

5. 发明授权

US07186298B2 Wafer support system 有权
标题翻译：晶圆支撑系统
公开(公告)号：US07186298B2
公开(公告)日：2007-03-06
申请号：US10642799
申请日：2003-08-18
申请人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
发明人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
摘要翻译：一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。气体通过中空驱动轴输送到基座下方的多臂感受器支架中。支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。气体通道被布置成在散布在晶片之下之前加热吹扫气体。可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

6. 发明授权

US06454866B1 Wafer support system 失效
公开(公告)号：US06454866B1
公开(公告)日：2002-09-24
申请号：US09614481
申请日：2000-07-10
申请人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
发明人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC分类号： C23C1600
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

7. 发明授权

US6113702A Wafer support system 失效
公开(公告)号：US6113702A
公开(公告)日：2000-09-05
申请号：US923241
申请日：1997-09-04
申请人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
发明人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC分类号： C23C16/458 , A21B2/00 , B24B7/00 , C23C14/00 , C23C16/00 , C23C16/44 , C23C16/46 , C23C16/48 , C23C16/52 , C23F1/00 , C30B31/12 , C30B31/18 , H01L21/00 , H01L21/205 , H01L21/324 , H01L23/34
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002
摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

8. 发明授权

US06491757B2 Wafer support system 有权
标题翻译：晶圆支撑系统
公开(公告)号：US06491757B2
公开(公告)日：2002-12-10
申请号：US09932795
申请日：2001-08-17
申请人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
发明人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC分类号： C23C1600
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
摘要： An apparatus for processing a substrate comprises a susceptor for supporting the substrate, an upper heat source spaced above the susceptor, a lower heat source spaced below the susceptor, and a controller. The controller provides power to the heat sources at a selected ratio between the sources. The controller is configured to vary the ratio during a high temperature processing cycle of a substrate to thereby vary the ratio of the heat provided by the heat sources during the cycle.
摘要翻译：用于处理衬底的装置包括用于支撑衬底的基座，在基座上方间隔开的上部热源，在该基座下方隔开的下部热源以及控制器。控制器以源之间选定的比例为热源提供电力。控制器被配置为在衬底的高温处理循环期间改变比率，从而改变在循环期间由热源提供的热的比率。

9. 发明授权

US06203622B1 Wafer support system 有权
标题翻译：晶圆支撑系统
公开(公告)号：US06203622B1
公开(公告)日：2001-03-20
申请号：US09480918
申请日：2000-01-11
申请人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
发明人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/4584 , C23C16/4586 , H01L21/67109 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The susceptor support arms are hollow and conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages within the segmented susceptor are arranged to provide even heat distribution from the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
摘要翻译：一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开来。吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。气体通过中空驱动轴输送到基座下方的多臂感受器支架中。基座支撑臂是中空的，并将吹扫气体从驱动轴传导到分段基座中的气体通道。分段基座内的气体通道布置成在晶片下方分配之前提供均匀的来自吹扫气体的热分布。可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

10. 发明授权

US6053982A Wafer support system 失效
标题翻译：晶圆支撑系统
公开(公告)号：US6053982A
公开(公告)日：2000-04-25
申请号：US706069
申请日：1996-08-30
申请人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
发明人： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/00 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/4584 , C23C16/4586 , H01L21/67109 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The susceptor support arms are hollow and conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages within the segmented susceptor are arranged to provide even heat distribution from the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
摘要翻译：一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开来。吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。气体通过中空驱动轴输送到基座下方的多臂感受器支架中。基座支撑臂是中空的，并将吹扫气体从驱动轴传导到分段基座中的气体通道。分段基座内的气体通道布置成在晶片下方分配之前提供均匀的来自吹扫气体的热分布。可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

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