专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06325858B1 Long life high temperature process chamber 有权
标题翻译：长寿命高温加工室
公开(公告)号：US06325858B1
公开(公告)日：2001-12-04
申请号：US09184490
申请日：1998-11-02
申请人： John F. Wengert , Ivo Raaijmakers , Mike Halpin , Loren Jacobs , Michael J. Meyer , Frank van Bilsen , Matt Goodman , Eric Barrett , Eric Wood , Blake Samuels
发明人： John F. Wengert , Ivo Raaijmakers , Mike Halpin , Loren Jacobs , Michael J. Meyer , Frank van Bilsen , Matt Goodman , Eric Barrett , Eric Wood , Blake Samuels
IPC分类号： C23C1600
CPC分类号： H01L21/67115 , C23C16/4401 , C23C16/481 , G01K1/12 , G01K7/04
摘要： A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.
摘要翻译：公开了一种大致水平取向的石英CVD室，其具有邻近中心定位的基座和周围温度控制环的前室和后室分隔板，其将室分成上部和下部区域。公开了CVD工艺组件的寿命的改善和相关的生产率改进。用于吸引一些未使用的反应气体的吸气板位于大致平行于分隔板和上室壁之间并间隔开的基座的下游。该吸气板还使得室壁上的沉积最小化并且提高了清洁步骤的效率。辐射元件也位于腔室的侧壁附近以加热冷却器室壁区域。吸气板和再辐射元件加上感受器和环绕环均由固体化学气相沉积SiC制成，以提高腔室的使用寿命。此外，靠近基座的热电偶设置有SiC护套，以使得热电偶能够承受比石英护套更多的工艺循环。可以在整个室中的石英组件上提供SiC护罩以保护石英免于失透。通过减少停机时间和减少处理循环的清洗步骤时间来改善产量。

IPRDB

热门服务

关于我们

友情链接

联系方式