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1. 发明授权

US08100620B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08100620B2
公开(公告)日：2012-01-24
申请号：US12203168
申请日：2008-09-03
申请人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
发明人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
IPC分类号： H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/67196
摘要： A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.
摘要翻译：真空处理装置包括各自具有具有减压内部空间的处理室的真空处理容器，耦合到设置在其周围的真空容器并具有低压内部空间的真空转移容器，被输送的处理过的工件;大气转移容器，其连接到真空传送容器的前侧，并且其前表面上包括安装在其上的工作台，其中工件被接收在其中，用于将工件传送到内部空间中大气压力的位置调整机构，位于左右两端之一的大气输送容器内，用于调整工件的位置;以及调节器，其设置在该机器的下部与底面之间，流体被供给到真空处理容器。

2. 发明申请

US20090324367A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工设备
公开(公告)号：US20090324367A1
公开(公告)日：2009-12-31
申请号：US12203168
申请日：2008-09-03
申请人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
发明人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
IPC分类号： H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/67196
摘要： A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.
摘要翻译：真空处理装置包括各自具有具有减压内部空间的处理室的真空处理容器，耦合到设置在其周围的真空容器并具有低压内部空间的真空转移容器，被输送的处理过的工件;大气转移容器，其连接到真空传送容器的前侧，并且其前表面上包括安装在其上的工作台，其中工件被接收在其中，用于将工件传送到内部空间中大气压力的位置调整机构，位于左右两端的大气输送容器内，用于调整工件的位置;以及调节器，其配置在该机器的下部与底面之间，流体被供给到真空处理容器。

3. 发明申请

US20090165952A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090165952A1
公开(公告)日：2009-07-02
申请号：US12039994
申请日：2008-02-29
申请人： Susumu Tauchi , Shingo Kimura , Minoru Yatomi , Masakazu Isozaki , Akitaka Makino
发明人： Susumu Tauchi , Shingo Kimura , Minoru Yatomi , Masakazu Isozaki , Akitaka Makino
IPC分类号： H01L21/306
CPC分类号： H01L21/6719
摘要： The invention provides a semiconductor manufacturing apparatus having a high productivity per installed area. In a vacuum processing apparatus provided with a plurality of cassettes on which a cassette is stored, a vacuum feed chamber arranged in a back face side of the atmospheric air feed chamber in a state of being coupled thereto, having a polygonal plane shape and structured such that the wafer is fed in a depressurized inner portion, and a plurality of vacuum processing chambers detachably coupled to a side surface of the vacuum feed chamber, arranged in adjacent thereto and processing the wafer fed to an inner portion from the vacuum feed chamber, a plurality of vacuum processing apparatuses includes a plurality of etching processing chamber carrying out an etching process of the wafer and at least one ashing processing chamber carrying out an ashing process of the wafer, the ashing processing chamber is coupled to a side surface in one of right and left sides as seen from the front face of the vacuum feed chamber, and the atmospheric air feed chamber is arranged so as to be biased to the one side to which the ashing processing chamber is coupled.
摘要翻译：本发明提供了一种具有每个安装面积的高生产率的半导体制造装置。在设置有多个盒体的真空处理装置中，盒子被存储在该真空处理装置上，一个真空进料腔室被布置在大气供给室的背面侧，处于与之相连的状态，具有多边形平面形状并被构造晶片被供给到减压内部，以及可拆卸地联接到真空进料室的侧表面的多个真空处理室，与真空进料室相邻布置并处理从真空进料室供给到内部的晶片，多个真空处理装置包括执行晶片的蚀刻处理的多个蚀刻处理室和进行晶片的灰化处理的至少一个灰化处理室，灰化处理室与右侧的一个侧面以及从真空进料室的前表面看到的左侧，大气供给室被布置成被偏压到t 灰色处理室与其相连的一侧。

4. 发明申请

US20090214399A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090214399A1
公开(公告)日：2009-08-27
申请号：US12041029
申请日：2008-03-03
申请人： Minoru Yatomi , Akitaka Makino , Shingo Kimura
发明人： Minoru Yatomi , Akitaka Makino , Shingo Kimura
IPC分类号： B01J19/08
CPC分类号： H01L21/67196 , H01L21/67201
摘要： The invention provides a vacuum processing apparatus for processing a sample placed within a processing chamber in a vacuum reactor using plasma generated within the processing chamber, the apparatus comprising an atmospheric transfer chamber disposed on a front portion of the apparatus for transferring the sample under atmospheric pressure, a vacuum transfer chamber arranged on a rear side of the atmospheric transfer chamber for transferring the sample in the inner side of the chamber being vacuumed, a lock chamber disposed between and connecting the vacuum transfer chamber and the atmospheric transfer chamber, a plurality of vacuum processing units including vacuum reactors and arranged in the circumference of and connected to the vacuum transfer chamber, and a plurality of flow controllers arranged in a space below the vacuum transfer chamber or the lock chamber for controlling flow rates of a plurality of gases for processing the sample to be supplied respectively to the vacuum processing units.
摘要翻译：本发明提供了一种真空处理装置，用于处理放置在真空反应器内的处理室内的样品的真空处理装置，该样品器使用处理室内产生的等离子体，该装置包括设置在装置前部的大气传送室，用于在大气压下传送样品，设置在大气传送室的后侧的真空传送室，用于将被抽吸的室的内侧的样品转移;设置在真空传送室和大气传送室之间并连接真空传送室和大气传送室的锁定室，多个真空包括真空反应器的处理单元并布置在真空传送室的周边并连接到真空传送室，以及多个流量控制器，其布置在真空传送室或锁定室下方的空间中，用于控制用于处理的多个气体的流速样品分别提供给真空专业人员排污单位。

5. 发明申请

US20060054278A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060054278A1
公开(公告)日：2006-03-16
申请号：US11065561
申请日：2005-02-25
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi , Minoru Yatomi , Nobuo Nagayasu
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi , Minoru Yatomi , Nobuo Nagayasu
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67248 , H01J37/32522 , H01L21/6719 , H01L21/67196
摘要： The present invention provides a plasma processing apparatus for processing a sample on a sample stand in a vacuum container whose inside pressure is reduced, with a plasma generated in an upper space above the sample stand. The apparatus comprises: an electric discharge chamber disposed in the vacuum container and above the sample stand, and having a discharge-chamber sidewall surrounding the upper space; a vacuum chamber disposed in the vacuum container and below the electric discharge chamber, and in communication with the electric discharge chamber; a vacuum-chamber sidewall disposed inside the vacuum container to surround the sample stand, and constituting a side surface of the vacuum chamber; a first temperature regulator disposed outside the discharge-chamber sidewall to adjust a temperature of the discharge-chamber sidewall; and a second temperature regulator controlling a temperature of the vacuum-chamber sidewall to a value lower than the temperature of the discharge-chamber sidewall.
摘要翻译：本发明提供了一种等离子体处理装置，用于在样品台上的上部空间中产生的等离子体，在样品台上处理内部压力降低的真空容器中的样品。该设备包括：放电室，设置在真空容器中并在样品台上方，并具有围绕上部空间的放电室侧壁; 真空室，设置在所述真空容器中并位于所述放电室的下方，并与所述放电室连通; 设置在所述真空容器内部以包围所述样品台的真空室侧壁，并构成所述真空室的侧面; 第一温度调节器，其布置在所述放电室侧壁外侧，以调节所述放电室侧壁的温度; 以及将所述真空室侧壁的温度控制在比所述排出室侧壁的温度低的值的第二温度调节器。

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