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    • 5. 发明申请
    • METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR
    • 薄膜电容器及其膜的制造树脂薄膜的方法
    • US20110117348A1
    • 2011-05-19
    • US12917145
    • 2010-11-01
    • Kenro TAKIZAWAYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • Kenro TAKIZAWAYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • B32B3/00B29C47/12
    • B29C47/886B29C47/0021B29C47/14B29C47/8845B29K2079/085B29K2105/256C08G73/1046C08L79/08
    • The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].
    • 本发明提供一种薄膜电容器用薄膜的制造方法,其可以制造厚度为10μm以下的薄膜电容薄膜,其耐热性和耐高压性优异 通过使用聚醚酰亚胺树脂的精度,并提供薄膜电容器的膜。 上述制造方法包括以下步骤:将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中,将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出,插入 用于压辊31和冷却辊33之间的薄膜电容器用薄膜50,在卷绕设备40上冷却并卷绕厚度为10μm以下的薄膜电容器的冷却薄膜50,其中假设剪切 T模20的唇部21中的熔融成型材料1的比例设定为γ[/ s],冷却辊33的圆周速度设定为V [m / s],比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。
    • 6. 发明授权
    • Method for manufacturing resin film for thin film-capacitor and the film therefor
    • 薄膜电容器用树脂薄膜及其薄膜的制造方法
    • US08524133B2
    • 2013-09-03
    • US12917145
    • 2010-11-01
    • Kenro TakizawaYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • Kenro TakizawaYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • D01D5/16
    • B29C47/886B29C47/0021B29C47/14B29C47/8845B29K2079/085B29K2105/256C08G73/1046C08L79/08
    • The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].
    • 本发明提供一种薄膜电容器用薄膜的制造方法,其可以制造薄膜电容器薄膜,该薄膜电容器的厚度为10μm以下,耐热性优异,高厚度的耐电压性优异 通过使用聚醚酰亚胺树脂的精度,并提供薄膜电容器的膜。 上述制造方法包括以下步骤:将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中,将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出,插入 用于在压辊31和冷却辊33之间的薄膜电容器用薄膜50,在卷绕设备40上冷却并卷绕厚度为10um以下的薄膜电容器的冷却薄膜50,其中假设剪切 将T形块20的唇部21中的熔融成型材料1的速度设定为γ[/ s],将冷却辊33的圆周速度设定为V [m / s],将比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。
    • 7. 发明授权
    • Welding transformer and welding transformer assembly and welding apparatus
    • 焊接变压器和焊接变压器总成及焊接设备
    • US09202622B2
    • 2015-12-01
    • US13813174
    • 2012-06-29
    • Koji KaiKazuki HouzanAkira NagaiKazuhiro Suzuki
    • Koji KaiKazuki HouzanAkira NagaiKazuhiro Suzuki
    • B23K11/24H01F27/06H01F38/08B23K11/11H01F27/40
    • H01F38/085B23K11/115B23K11/241B23K2101/18H01F2027/408
    • It is possible to control a welding in a high speed and a high precision large electric current, and consumption electric power is also reduced. In the welding transformer, a loop magnetic core 25, a wound primary coil 12, plural positive side coils 14 and plural negative side coils 16 that are alternately sandwiched between respective gaps 12a of the primary coil 12, are comprised. A coil is fixed on the other surface of a contact base member 62. On the other surface of the contact base member 62, a first connection polar board 44 is electrically connected to a positive side electric conductor 30 through the first connection polar board 44. A negative side coil 16 is electrically connected to a negative side electric conductor 32. The connecting part of the positive side coil 14 and the negative side coil 16 is electrically connected to the third connection polar board 48. By sandwiching a thin insulation layer 31, a positive side electric conductor 30, a rectifying device 18 and a first polar board 34 are arranged on one side; A negative side electric conductor 32, a rectifying device 20 and a second polar board 36 are arranged on the other side; and the first polar board 34 and the second polar board 36 are electrically connected to a third polar board 38. It is possible to use by combining plural units and by connecting an output side in parallel in a small size and a large capacity.
    • 可以高速,高精度的大电流控制焊接,消耗电力也降低。 在焊接变压器中,包括交替夹在初级线圈12的相应间隙12a之间的环形磁芯25,绕组初级线圈12,多个正侧线圈14和多个负侧线圈16。 线圈固定在接触基底构件62的另一个表面上。在接触基底构件62的另一个表面上,第一连接极板44通过第一连接极板44电连接到正侧电导体30。 负极侧线圈16与负极侧导体32电连接。正极侧线圈14与负极侧线圈16的连接部与第3连接极板48电连接。通过夹持薄层绝缘层31, 正侧导电体30,整流装置18和第一极板34一侧配置; 负侧导电体32,整流装置20和第二极板36配置在另一侧。 并且第一极板34和第二极板36电连接到第三极板38.可以通过组合多个单元并且通过以小尺寸和大容量并联连接输出侧来使用。