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1. 发明授权

US07642145B2 Method for producing electronic device 有权
标题翻译：电子装置的制造方法
公开(公告)号：US07642145B2
公开(公告)日：2010-01-05
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： H01L21/8238
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译：存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致的器件性能劣化，从而对系统性能产生不良影响。本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大，使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。

2. 发明申请

US20060105273A1 Method for producing electronic device 有权
标题翻译：电子装置的制造方法
公开(公告)号：US20060105273A1
公开(公告)日：2006-05-18
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： G03C5/00
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译：存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致器件性能劣化，从而对系统性能产生不良影响。本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大，使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。

3. 发明授权

US07005216B2 Photo mask 有权
标题翻译：照片面具
公开(公告)号：US07005216B2
公开(公告)日：2006-02-28
申请号：US10299692
申请日：2002-11-20
申请人： Hiroshi Shiraishi , Sonoko Migitaka , Takashi Hattori , Tadashi Arai , Toshio Sakamizu
发明人： Hiroshi Shiraishi , Sonoko Migitaka , Takashi Hattori , Tadashi Arai , Toshio Sakamizu
IPC分类号： G03F9/00
CPC分类号： G03F1/56
摘要： Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.
摘要翻译：提供KrF准分子激光光刻的光掩模，可以在较小数量的步骤中以高精度和低缺陷生产。根据本发明的用于KrF准分子激光光刻的光掩模是其中直接在石英衬底10上形成有效吸收KrF准分子激光（波长：约248nm）的抗蚀剂图案18的光掩模。抗蚀剂图案18包括：具有高遮光性的碱性水溶性树脂，其包含具有至少一个与萘核结合的羟基的萘酚结构; 或具有作为主要成分的含有上述碱溶性水溶性树脂的衍生物的碱溶性树脂作为树脂基质的辐射敏感性抗蚀剂。

4. 发明授权

US06800423B2 Radiation-sensitive composition and method for forming patterns and fabricating semiconductor devices 失效
标题翻译：用于形成图案并制造半导体器件的辐射敏感组合物和方法
公开(公告)号：US06800423B2
公开(公告)日：2004-10-05
申请号：US10294618
申请日：2002-11-15
申请人： Yoshiyuki Yokoyama , Takashi Hattori
发明人： Yoshiyuki Yokoyama , Takashi Hattori
IPC分类号： G03C500
CPC分类号： G03F7/0046 , G03F7/0392 , G03F7/0397 , H01L21/31144 , H01L21/32139 , Y10S430/111 , Y10S430/146
摘要： There is provided a negative radiation-sensitive composition, which is suitable for exposure of a far ultraviolet light comprising a wavelength 193 nm of ArF excimer-laser, freed from causes of resolution deterioration such as swelling due to permeation of a developer and residual of a resist film between lines of the pattern, and capable of forming a high resolution pattern. The radiation-sensitive composition comprises a polymer of an acrylic acid ester having a &ggr;-hydroxycarboxylic acid in its ester moiety and a photo-acid generator.
摘要翻译：提供了一种负辐射敏感性组合物，其适用于暴露包含波长为193nm的ArF准分子激光器的远紫外光，其不会因分解劣化的原因而引起，例如由于显影剂渗透引起的溶胀和残留的在图案的线之间抗蚀膜，并且能够形成高分辨率图案。辐射敏感组合物包含其酯部分中具有γ-羟基羧酸的丙烯酸酯的聚合物和光酸产生剂。

5. 发明授权

US06927002B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

6. 发明授权

US06703171B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06703171B2
公开(公告)日：2004-03-09
申请号：US10072880
申请日：2002-02-12
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

7. 发明授权

US6156486A Method for pattern formation and process for preparing semiconductor device 有权
标题翻译：图案形成方法和制备半导体器件的方法
公开(公告)号：US6156486A
公开(公告)日：2000-12-05
申请号：US432797
申请日：1999-11-03
申请人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
发明人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F7/038 , G03F7/00
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
摘要翻译：在包括ArF准分子激光器的波长193nm的远紫外区域中形成阴图案，尽管其化学结构具有高干蚀刻，但不膨胀并具有优异的分辨率。使用酸催化的反应，其中γ-羟基或δ-羟基羧酸结构部分或全部转化为γ-内酯或δ-内酯结构。阴性图案用碱性水溶液显影而没有溶胀。

8. 发明授权

US06855483B2 Method for pattern formation and process for preparing semiconductor device 失效
标题翻译：图案形成方法和制备半导体器件的方法
公开(公告)号：US06855483B2
公开(公告)日：2005-02-15
申请号：US10263704
申请日：2002-10-04
申请人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
发明人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F7/038 , G03F7/00
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a γ-hydroxy or δ-hydroxy carboxylic acid structure is partially or entirely converted to a γ-lactone or δ-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
摘要翻译：在包括ArF准分子激光器的波长193nm的远紫外区域中形成阴图案，尽管其化学结构具有高干蚀刻，但不膨胀并具有优异的分辨率。使用酸催化的反应，其中γ-羟基或δ-羟基羧酸结构部分或全部转化为γ-内酯或δ-内酯结构。阴性图案用碱性水溶液显影而没有溶胀。

9. 发明授权

US06489082B1 Method for pattern formation and process for preparing semiconductor device 有权
标题翻译：图案形成方法和制备半导体器件的方法
公开(公告)号：US06489082B1
公开(公告)日：2002-12-03
申请号：US09649592
申请日：2000-08-29
申请人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
发明人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
IPC分类号： G03F700
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a &ggr;-hydroxy or &dgr;-hydroxy carboxylic acid structure is partially or entirely converted to a &ggr;-lactone or &dgr;-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
摘要翻译：在包括ArF准分子激光器的波长193nm的远紫外区域中形成阴图案，尽管其化学结构具有高干蚀刻，但不膨胀并具有优异的分辨率。使用酸催化的反应，其中γ-羟基或δ-羟基羧酸结构部分或全部转化为γ-内酯或δ-内酯结构。阴性图案用碱性水溶液显影而没有溶胀。

10. 发明授权

US6017680A Method for pattern formation and process for preparing semiconductor device 失效
公开(公告)号：US6017680A
公开(公告)日：2000-01-25
申请号：US86610
申请日：1998-05-29
申请人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
发明人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F7/038 , G03F7/00
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.

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