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1. 发明授权

US06642110B2 Flash memory cell and method of manufacturing the same 失效
公开(公告)号：US06642110B2
公开(公告)日：2003-11-04
申请号：US10224561
申请日：2002-08-21
申请人： Sung Mun Jung , Sung Bo Sim , Kwi Wook Kim
发明人： Sung Mun Jung , Sung Bo Sim , Kwi Wook Kim
IPC分类号： H01L218247
CPC分类号： H01L29/7883 , H01L21/28273 , H01L29/42324
摘要： There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.

2. 发明授权

US06465833B1 Flash memory cell and method of manufacturing 失效
标题翻译：闪存单元和制造方法
公开(公告)号：US06465833B1
公开(公告)日：2002-10-15
申请号：US09474371
申请日：1999-12-29
申请人： Sung Mun Jung , Sung Bo Sim , Kwi Wook Kim
发明人： Sung Mun Jung , Sung Bo Sim , Kwi Wook Kim
IPC分类号： H01L2976
CPC分类号： H01L29/7883 , H01L21/28273 , H01L29/42324
摘要： There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration non-volatile memory device.
摘要翻译：公开了一种闪存单元及其制造方法，其中在形成在硅衬底上的绝缘膜中形成圆形孔，在孔内形成具有圆柱形状的浮动栅极，并且在该栅极内部形成控制栅极浮动门。因此，用作电流源的源和硅衬底可以一体地形成，并且也可以省略形成器件分离膜的工艺，从而可以制造超高集成度的非易失性存储器件。

3. 发明授权

US06274418B1 Method of manufacturing flash memory cell 有权
标题翻译：制造闪存单元的方法
公开(公告)号：US06274418B1
公开(公告)日：2001-08-14
申请号：US09609159
申请日：2000-06-30
申请人： Sang Soo Kim , Sung Mun Jung , Kwi Wook Kim
发明人： Sang Soo Kim , Sung Mun Jung , Kwi Wook Kim
IPC分类号： H01L218238
CPC分类号： H01L29/66825 , H01L21/28273 , H01L29/42324 , H01L29/7885
摘要： The present invention relates to a method of manufacturing a flash memory cell. In order to solve a problem that a reliability of a device is degraded according as electron injected into a floating gate leaks to an exterior due to various stimulus, the floating gate of the flash memory cell is formed dividely into a upper layer and a lower layer with respect to a charge barrier layer so that the leakage of the electrons injected into the floating gate can be prevented from external stimulus, thereby improving a reliability of the memory device.
摘要翻译：本发明涉及一种制造闪存单元的方法。为了解决由于各种刺激而将电子注入到浮动栅中的器件的可靠性降低到外部的问题，闪速存储单元的浮置栅极分成上层和下层相对于电荷阻挡层，能够防止注入到浮置栅极中的电子的外部刺激，从而提高存储器件的可靠性。

4. 发明授权

US08383475B2 EEPROM cell 有权
标题翻译： EEPROM单元
公开(公告)号：US08383475B2
公开(公告)日：2013-02-26
申请号：US12888431
申请日：2010-09-23
申请人： Sung Mun Jung , Kian Hong Lim , Jianbo Yang , Swee Tuck Woo , Sanford Chu
发明人： Sung Mun Jung , Kian Hong Lim , Jianbo Yang , Swee Tuck Woo , Sanford Chu
IPC分类号： H01L21/8238
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11524 , H01L29/66825 , H01L29/7881
摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area separated by other active areas by isolation regions. First and second gates of first and second transistors in the cell area are formed. The first gate includes first and second sub-gates separated by a first intergate dielectric layer. The second gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the second gate are separated by a second intergate dielectric layer. First and second junctions of the first and second transistors are formed. The method also includes forming a first gate terminal coupled to the second sub-gate of the first transistor and a second gate terminal coupled to at least the first sub-gate of the second transistor.
摘要翻译：公开了一种形成装置的方法。该方法包括提供制备有由其它活性区域隔离的细胞区域的基底。在单元区域中形成第一和第二晶体管的第一和第二栅极。第一栅极包括由第一隔间栅极介电层隔开的第一和第二子栅极。第二栅极包括围绕第一子栅极的第二子栅极。第二栅极的第一和第二子栅极由第二栅极间介电层分开。形成第一和第二晶体管的第一和第二结。该方法还包括形成耦合到第一晶体管的第二子栅极的第一栅极端子和耦合到第二晶体管的至少第一子栅极的第二栅极端子。

5. 发明授权

US07439603B2 Non-volatile memory device and fabricating method thereof 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07439603B2
公开(公告)日：2008-10-21
申请号：US11701484
申请日：2007-02-02
申请人： Sung Mun Jung , Jum Soo Kim
发明人： Sung Mun Jung , Jum Soo Kim
IPC分类号： H01L23/58
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/66833 , H01L29/792
摘要： The present invention provides a non-volatile memory device and fabricating method thereof, by which a cell size can be lowered despite high degree of cell integration and by which the device fabrication is facilitated. The present invention includes at least two trench isolation layers arranged in a device isolation area of a semiconductor substrate, each having a first depth, a first conductive type well arranged between the at least two trench isolation layers to have a second depth smaller than the first depth, a second conductive type source region and a second conductive type drain region arranged in a prescribed upper part of the first conductive type well to be separated from each other by a channel region in-between, an ONO layer on the channel region of the semiconductor substrate, the ONO layer comprising a lower oxide layer, a nitride layer, and an upper oxide layer, and a wordline conductor layer on the ONO layer.
摘要翻译：本发明提供了一种非易失性存储器件及其制造方法，通过该非易失性存储器件可以降低电池尺寸，尽管电池集成度高，并且器件制造方便。本发明包括布置在半导体衬底的器件隔离区域中的至少两个沟槽隔离层，每个具有第一深度，第一导电类型阱布置在所述至少两个沟槽隔离层之间，以具有小于第一深度的第二深度第二导电型源极区域和第二导电型漏极区域，布置在第一导电类型阱的规定的上部中，通过其间的沟道区域彼此分离，在该沟道区域上的ONO层半导体衬底，ONO层包括低氧化物层，氮化物层和上部氧化物层，以及ONO层上的字线导体层。

6. 发明申请

US20080032513A1 INTEGRATED CIRCUIT SYSTEM INCLUDING NITRIDE LAYER TECHNOLOGY 有权
标题翻译：集成电路系统，包括氮化层技术
公开(公告)号：US20080032513A1
公开(公告)日：2008-02-07
申请号：US11428618
申请日：2006-07-05
申请人： Sripad Sheshagiri Nagarad , Hwa Weng Koh , Dong Kyun Sohn , Xiaoyu Chen , Louis Lim , Sung Mun Jung , Chiew Wah Yap , Pradeep Ramachandramurthy Yelehanka , Nitin Kamat
发明人： Sripad Sheshagiri Nagarad , Hwa Weng Koh , Dong Kyun Sohn , Xiaoyu Chen , Louis Lim , Sung Mun Jung , Chiew Wah Yap , Pradeep Ramachandramurthy Yelehanka , Nitin Kamat
IPC分类号： H01L21/31
CPC分类号： H01L21/3185 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L27/105 , H01L27/11568 , H01L27/11573
摘要： An integrated circuit system including loading a wafer into a processing chamber and pre-purging the processing chamber with a first ammonia gas. Depositing a first nitride layer over the wafer and purging the processing chamber with a second ammonia gas. Depositing a second nitride layer over the first nitride layer that is misaligned with the first nitride layer. Post-purging the processing chamber with a third ammonia gas and purging the processing chamber with a nitrogen gas.
摘要翻译：一种集成电路系统，包括将晶片装载到处理室中并用第一氨气预处理室。在晶片上沉积第一氮化物层并用第二氨气吹扫处理室。在与第一氮化物层不对准的第一氮化物层上沉积第二氮化物层。用第三氨气对处理室进行后吹扫，并用氮气吹扫处理室。

7. 发明授权

US07183155B2 Non-volatile memory device and fabricating method thereof 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07183155B2
公开(公告)日：2007-02-27
申请号：US11019299
申请日：2004-12-23
申请人： Sung Mun Jung , Jum Soo Kim
发明人： Sung Mun Jung , Jum Soo Kim
IPC分类号： H01L21/8238
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/66833 , H01L29/792
摘要： The present invention provides a non-volatile memory device and fabricating method thereof, by which a cell size can be lowered despite high degree of cell integration and by which the device fabrication is facilitated. The present invention includes at least two trench isolation layers arranged in a device isolation area of a semiconductor substrate, each having a first depth, a first conductive type well arranged between the at least two trench isolation layers to have a second depth smaller than the first depth, a second conductive type source region and a second conductive type drain region arranged in a prescribed upper part of the first conductive type well to be separated from each other by a channel region in-between, an ONO layer on the channel region of the semiconductor substrate, the ONO layer comprising a lower oxide layer, a nitride layer, and an upper oxide layer, and a wordline conductor layer on the ONO layer.
摘要翻译：本发明提供了一种非易失性存储器件及其制造方法，通过该非易失性存储器件可以降低电池尺寸，尽管电池集成度高，并且器件制造方便。本发明包括布置在半导体衬底的器件隔离区域中的至少两个沟槽隔离层，每个具有第一深度，第一导电类型阱布置在所述至少两个沟槽隔离层之间，以具有小于第一深度的第二深度第二导电型源极区域和第二导电型漏极区域，布置在第一导电类型阱的规定的上部中，通过其间的沟道区域彼此分离，在该沟道区域上的ONO层半导体衬底，ONO层包括低氧化物层，氮化物层和上部氧化物层，以及ONO层上的字线导体层。

8. 发明授权

US06472752B1 Flash memory device 有权
标题翻译：闪存设备
公开(公告)号：US06472752B1
公开(公告)日：2002-10-29
申请号：US09717032
申请日：2000-11-22
申请人： Bong Kil Kim , Sung Mun Jung
发明人： Bong Kil Kim , Sung Mun Jung
IPC分类号： H01L2348
CPC分类号： H01L27/105
摘要： A flash memory device is configured to address the problems that charges generated when via hole is etched is charged to a junction region through a metal line and are thus concentrated on a tunnel oxide film, thus making distribution of a threshold voltage over a cell uneven when a device is driven. In order to solve the problems, the device has a junction region in an outside circuit region so charges generated when via hole is etched is concentrated on the junction region formed in the outside circuit region. Thus, it can prevent concentration of the charges on the cell and thus make uniform distribution of the threshold voltage over a cell array.
摘要翻译：闪存器件被配置为解决当通孔被蚀刻时产生的电荷通过金属线被充电到结区域并因此集中在隧道氧化物膜上的问题，从而使阈值电压在电池上的分布不均匀，一个设备被驱动。为了解决上述问题，该器件在外部电路区域具有接合区域，因此当通孔被蚀刻时产生的电荷集中在形成在外部电路区域中的接合区域上。因此，可以防止电池在电池上的集中，从而使电池阵列上的阈值电压均匀分布。

9. 发明授权

US07595237B2 Non-volatile memory cell with a hybrid access transistor 有权
标题翻译：具有混合存取晶体管的非易失性存储单元
公开(公告)号：US07595237B2
公开(公告)日：2009-09-29
申请号：US11740939
申请日：2007-04-27
申请人： Xiaoyu Chen , Donghua Liu , Sung Mun Jung , Swee Tuck Woo , Rachel Low , Louis Lim , Siow Lee Chwa
发明人： Xiaoyu Chen , Donghua Liu , Sung Mun Jung , Swee Tuck Woo , Rachel Low , Louis Lim , Siow Lee Chwa
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , G11C16/0433 , H01L21/28282 , H01L29/66833
摘要： A non-volatile memory cell includes an access and a storage transistor coupled in series. The memory cell is formed on a thin gate well tailored for transistors with thin gate dielectrics. The access transistor is a hybrid transistor which includes a gate with a thick gate dielectric layer formed on the thin gate well.
摘要翻译：非易失性存储单元包括串联耦合的存取晶体管和存储晶体管。存储器单元形成在薄栅极上，该薄栅极具有薄栅极电介质的晶体管。存取晶体管是混合晶体管，其包括形成在薄栅极阱上的具有厚栅介电层的栅极。

10. 发明申请

US20070207558A1 INTEGRATED CIRCUIT MEMORY SYSTEM WITH DUMMY ACTIVE REGION 有权
标题翻译：集成电路存储器系统与DUMMY活动区域
公开(公告)号：US20070207558A1
公开(公告)日：2007-09-06
申请号：US11308061
申请日：2006-03-04
申请人： Sung Mun Jung , Ching Dong Wang , Louis Yoke Leng Lim , Swee Tuck Woo , Donghua Liu , Xiaoyu Chen
发明人： Sung Mun Jung , Ching Dong Wang , Louis Yoke Leng Lim , Swee Tuck Woo , Donghua Liu , Xiaoyu Chen
IPC分类号： H01L21/00
CPC分类号： H01L27/115 , H01L27/11568
摘要： An integrated circuit memory system including a substrate formed with equidistant spaced shallow trench isolation regions. Forming active regions and dummy active regions within the substrate between the equidistant spaced shallow trench isolation regions. Forming sources and drains within the active regions. Providing wordlines and source lines extending in a first direction and bitlines extending in a second direction. Forming contact regions over the dummy active regions for strapping the wordlines and the source lines to the bitlines.
摘要翻译：一种集成电路存储器系统，包括形成有等间隔开的浅沟槽隔离区域的衬底。在等离子间隔开的浅沟槽隔离区域之间的衬底内形成有源区和虚拟有源区。在活跃区域内形成源头和排水渠。提供在第一方向上延伸的字线和源极线，并且沿第二方向延伸的位线。在虚拟有源区域上形成接触区域，用于将字线和源极线捆扎到位线。

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