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1. 发明授权

US5402747A Method of growing crystal 失效
标题翻译：生长晶体的方法
公开(公告)号：US5402747A
公开(公告)日：1995-04-04
申请号：US71102
申请日：1993-06-04
申请人： Sumio Kobayashi , Shunji Miyahara , Toshiyuki Fujiwara , Takayuki Kubo , Hideki Fujiwara , Shuichi Inami , Masahiko Okui
发明人： Sumio Kobayashi , Shunji Miyahara , Toshiyuki Fujiwara , Takayuki Kubo , Hideki Fujiwara , Shuichi Inami , Masahiko Okui
IPC分类号： C30B15/04 , C30B15/20 , C30B15/30 , H01L21/208
CPC分类号： C30B15/30 , C30B15/04 , C30B15/20
摘要： A single crystal material is filled in a crucible, and the whole of the single crystal material is melted to contain doping impurities. A solid layer coagulated upward from the bottom of the crucible is rendered to coexist with a melted layer over the solid layer. The solid layer is melted from the upper side thereof while pulling the single crystal from the melted layer. The ratio by weight between the solid layer and the single crystal material at the start of pulling is adjusted, together with the ratio by weight between the grown single crystal and the melting solid layer. The single crystal is thus grown while changing the volume of the melted layer.
摘要翻译：将单晶材料填充在坩埚中，并且将整个单晶材料熔化以含有掺杂杂质。从坩埚底部向上凝结的固体层与固体层上的熔融层共存。从熔融层拉出单晶时，从其上侧熔化固体层。调整开始拉伸时固体层与单晶材料之间的重量比，以及生长的单晶和熔融固体层之间的重量比。因此在改变熔融层的体积的同时生长单晶。

2. 发明授权

US5363796A Apparatus and method of growing single crystal 失效
标题翻译：生长单晶的装置和方法
公开(公告)号：US5363796A
公开(公告)日：1994-11-15
申请号：US837202
申请日：1992-02-18
申请人： Sumio Kobayashi , Shunji Miyahara , Toshiyuki Fujiwara , Takayuki Kubo , Hideki Fujiwara , Shuichi Inami
发明人： Sumio Kobayashi , Shunji Miyahara , Toshiyuki Fujiwara , Takayuki Kubo , Hideki Fujiwara , Shuichi Inami
IPC分类号： C30B15/00 , C30B15/14 , C30B15/10
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1068
摘要： An apparatus for growing a single crystal having a crucible, two heaters arranged at the outside of the crucible and along the vertical direction, a heat shield placed at the outside of the heaters, a radiation shield for shielding the single crystal from the radiation heat, and an upper heat shield for preventing the upward heat, transfer of the heaters. In the apparatus, a melted layer and solid layer of raw material are formed in the upper and lower portions of the crucible, respectively. While melting the solid layer, the single crystal is pulled up. The lower portion of the heat shield is thinner than the upper portion. The ratio of the height to the diameter of the crucible is 0.85 or more. The melting amount of the solid layer is controlled in the pulling process according to the non-segregation condition in the variable-thickness melted layer method. The oxygen concentration of the pulled single crystal is controlled in the pulling process by adjusting the rotation speed and rotation direction of the crucible.
摘要翻译：一种用于生长具有坩埚的单晶的装置，设置在坩埚外部并沿着垂直方向的两个加热器，设置在加热器外部的隔热罩，用于将单晶屏蔽在放射线上的辐射屏蔽，以及用于防止加热器的向上热传递的上部隔热罩。在该装置中，在坩埚的上部和下部分别形成熔融层和原料固体层。在熔化固体层时，单晶被拉起。隔热罩的下部比上部薄。坩埚的高度与直径之比为0.85以上。根据可变厚度熔融层法中的非偏析条件，在拉伸过程中控制固体层的熔融量。通过调节坩埚的旋转速度和旋转方向，在牵引过程中控制拉出的单晶的氧浓度。

3. 发明授权

US08549937B2 Method for determining COP generation factors for single-crystal silicon wafer 有权
标题翻译：用于确定单晶硅晶片的COP生成因子的方法
公开(公告)号：US08549937B2
公开(公告)日：2013-10-08
申请号：US13660299
申请日：2012-10-25
申请人： Shuichi Inami
发明人： Shuichi Inami
IPC分类号： G01N21/88
CPC分类号： G06F19/70 , C30B15/00 , C30B29/06
摘要： A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP densityRADIUSMAX, a minimum value of the COP density is set as COP densityRADIUSMIN, a value computed by “(COP densityRADIUSMAX-COP densityRADIUSMIN)/COP densityRADIUSMAX” is compared to a predetermined set value, and a non-crystal-induced COP and a crystal-induced COP are distinguished from each other based on a clear criterion, thereby determining the COP generation factor. Therefore, a rejected wafer in which a determination of the crystal-induced COP is made despite being the non-crystal-induced COP can be relieved, so that a wafer production yield can be enhanced.
摘要翻译：目标晶片的整个确定区域沿径向同心分割，在每个划分的确定段中获得COP密度，将COP浓度的最大值设置为COP densityRADIUSMAX，将COP密度的最小值设置为COP 密度RADIUSMIN，将通过“（COP densityRADIUSMAX-COP densityRADIUSMIN）/ COP densityRADIUSMAX”计算的值与预定设定值进行比较，并且基于清晰标准将非晶体诱导的COP和晶体诱导的COP彼此区分开，从而确定COP生成因子。因此，可以减轻其中尽管是非晶体诱导的COP而进行晶体诱导的COP的测定的拒绝晶片，从而可以提高晶片的制造成品率。

4. 发明授权

US07641734B2 Method for producing silicon single crystal 有权
标题翻译：硅单晶的制造方法
公开(公告)号：US07641734B2
公开(公告)日：2010-01-05
申请号：US12078645
申请日：2008-04-02
申请人： Shuichi Inami
发明人： Shuichi Inami
IPC分类号： C30B15/20
CPC分类号： C30B15/00 , C30B15/22 , C30B29/06
摘要： A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high concentration of boron is used and an included angle of a conical part during shoulder section formation is maintained within a specified range. It is thereby possible to grow large-diameter and heavy-weight dislocation-free silicon single crystals with a diameter of 300 mm or more in a stable manner, without the fear of dropping the single crystal during pulling up. Therefore, the method can be properly utilized in producing silicon single crystals as semiconductor materials.
摘要翻译：提供了通过Czochralski方法生长具有[110]晶轴取向的硅单晶的方法，根据该方法，使用掺杂有高浓度硼的硅晶种，并且在肩部形成期间锥形部分的夹角为保持在指定范围内。因此，可以稳定地生长直径为300mm以上的大直径且重量级的无位错硅单晶，而不用担心在拉起时滴下单晶。因此，该方法可以适当地用于制造作为半导体材料的硅单晶。

5. 发明申请

US20080245291A1 Method for producing silicon single crystal 有权
标题翻译：硅单晶的制造方法
公开(公告)号：US20080245291A1
公开(公告)日：2008-10-09
申请号：US12078645
申请日：2008-04-02
申请人： Shuichi Inami
发明人： Shuichi Inami
IPC分类号： C30B15/00
CPC分类号： C30B15/00 , C30B15/22 , C30B29/06
摘要： A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high concentration of boron is used and an included angle of a conical part during shoulder section formation is maintained within a specified range. It is thereby possible to grow large-diameter and heavy-weight dislocation-free silicon single crystals with a diameter of 300 mm or more in a stable manner, without the fear of dropping the single crystal during pulling up. Therefore, the method can be properly utilized in producing silicon single crystals as semiconductor materials.
摘要翻译：提供了通过Czochralski方法生长具有[110]晶轴取向的硅单晶的方法，根据该方法，使用掺杂有高浓度硼的硅晶种，并且在肩部形成期间锥形部分的夹角为保持在指定范围内。因此，可以稳定地生长直径为300mm以上的大直径且重量级的无位错硅单晶，而不用担心在拉起时滴下单晶。因此，该方法可以适当地用于制造作为半导体材料的硅单晶。

6. 发明申请

US20080053370A1 Method for producing silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20080053370A1
公开(公告)日：2008-03-06
申请号：US11896564
申请日：2007-09-04
申请人： Shuichi Inami , Kuniharu Inoue , Manabu Moroishi , Tsuguya Fukagawa , Nobuhiro Kusaba
发明人： Shuichi Inami , Kuniharu Inoue , Manabu Moroishi , Tsuguya Fukagawa , Nobuhiro Kusaba
IPC分类号： C30B15/02
CPC分类号： C30B29/06 , C30B15/22 , C30B15/36
摘要： An aspect of the invention provides a silicon single crystal production method in which a dislocation-free feature can easily be achieved to enhance crystal quality irrespective of a crystal orientation. In the silicon single crystal production method of the invention, by a Czochralski method, in dipping the seed crystal in the melt, a melt temperature is set to an optimum temperature at which the seed crystal is brought into contact with a melt surface, the melt temperature is lowered, the seed crystal is pulled up while a pulling rate of the seed crystal is increased, and the pulling rate is kept at a constant rate to form the neck portion at the time that a pulling diameter reaches a target neck diameter. The invention is suitable to the case in which a silicon single crystal having a crystal orientation is pulled up using the seed crystal having the crystal orientation .
摘要翻译：本发明的一个方面提供了一种硅单晶制造方法，其中无论晶体取向如何，都可以容易地实现无位错特征以提高晶体质量。在本发明的硅单晶制造方法中，通过切克劳斯基法，将晶种浸入熔融物中，将熔融温度设定为晶种与熔融表面接触的最佳温度，熔融降低晶种，同时提高晶种的拉伸速度，并且在拉伸直径达到目标颈部直径的时刻，拉伸速率保持恒定的速度形成颈部。本发明适用于使用具有晶体取向<110>的晶种将具有晶体取向<110>的单晶硅上拉的情况。

7. 发明申请

US20100000318A1 Method for determining cop generation factors for single-crystal silicon wafer 有权
标题翻译：用于确定单晶硅晶片的掩模生成因子的方法
公开(公告)号：US20100000318A1
公开(公告)日：2010-01-07
申请号：US12308058
申请日：2007-05-22
申请人： Shuichi Inami
发明人： Shuichi Inami
IPC分类号： G01N9/00
CPC分类号： G06F19/70 , C30B15/00 , C30B29/06
摘要： A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP densityRADIUSMIN, a minimum value of the COP density is set as COP densityRADIUSMIN, a value computed by “(COP densityRADIUSMAX−COP densityRADIUSMIN)/COP densityRADIUSMAX” is compared to a predetermined set value, and a non-crystal-induced COP and a crystal-induced COP are distinguished from each other based on a clear criterion, thereby determining the COP generation factor. Therefore, a rejected wafer in which a determination of the crystal-induced COP is made despite being the non-crystal-induced COP can be relieved, so that a wafer production yield can be enhanced.
摘要翻译：目标晶片的整个确定区域沿径向同心分割，在每个划分的确定段中获得COP密度，将COP密度的最大值设置为COP densityRADIUSMIN，将COP密度的最小值设置为COP 密度RADIUSMIN，将通过“（COP densityRADIUSMAX-COP densityRADIUSMIN）/ COP densityRADIUSMAX”计算的值与预定设定值进行比较，并且基于清晰标准将非晶体诱导的COP和晶体诱导的COP彼此区分开，从而确定COP生成因子。因此，可以减轻其中尽管是非晶体诱导的COP而进行晶体诱导的COP的测定的拒绝晶片，从而可以提高晶片的制造成品率。

8. 发明申请

US20060283379A1 Method for growing silicon single crystal and method for manufacturing silicon wafer 有权
标题翻译：生长硅单晶的方法及其制造方法
公开(公告)号：US20060283379A1
公开(公告)日：2006-12-21
申请号：US11356414
申请日：2006-02-17
申请人： Shuichi Inami , Nobumitsu Takase , Yasuhiro Kogure , Ken Hamada , Tsuyoshi Nakamura
发明人： Shuichi Inami , Nobumitsu Takase , Yasuhiro Kogure , Ken Hamada , Tsuyoshi Nakamura
IPC分类号： C30B21/04 , C30B13/00 , C30B28/08
CPC分类号： C30B29/06 , C30B15/04 , C30B15/14
摘要： In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.
摘要翻译：在用于生长硅单晶的方法中，硅单晶通过切克劳斯（Czochralski）法生长，以使氧浓度为12×10 17至18×10 17原子/ cm 2 > 3 。使用惰性气体和含有氢原子的气态物质的混合气体作为用于生长单晶的气氛气体。在晶体生长期间控制硅单晶的温度，使得晶体中心部分处的熔点和其温度为1350℃之间的轴向热梯度Gc的比率Gc / Ge与轴向在其熔点和其温度为1350℃之间的晶体周边的热梯度Ge为1.1至1.4。晶体中心部分的轴向热梯度Gc为3.0〜3.5℃/ mm。

9. 发明申请

US20060283373A1 Method for growing silicon single crystal 有权
公开(公告)号：US20060283373A1
公开(公告)日：2006-12-21
申请号：US11390366
申请日：2006-03-28
申请人： Shuichi Inami , Nobumitsu Takase , Yasuhiro Kogure , Ken Hamada , Tsuyoshi Nakamura
发明人： Shuichi Inami , Nobumitsu Takase , Yasuhiro Kogure , Ken Hamada , Tsuyoshi Nakamura
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/00 , C30B29/06
摘要： A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.

10. 发明授权

US09145620B2 Single crystal pulling apparatus 有权
公开(公告)号：US09145620B2
公开(公告)日：2015-09-29
申请号：US12385384
申请日：2009-04-07
申请人： Shuichi Inami , Ken Hamada , Hiroaki Taguchi , Takuya Yotsui , Takashi Atami
发明人： Shuichi Inami , Ken Hamada , Hiroaki Taguchi , Takuya Yotsui , Takashi Atami
IPC分类号： C30B15/20 , C30B15/14 , C30B15/10 , C30B35/00
CPC分类号： C30B15/14 , C30B15/10 , C30B15/20 , C30B15/206 , C30B35/00 , Y10T117/1068
摘要： A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance.

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