专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08771415B2 Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer 有权
标题翻译：硅单晶，硅单晶锭和硅晶片的制造方法
公开(公告)号：US08771415B2
公开(公告)日：2014-07-08
申请号：US12604627
申请日：2009-10-23
申请人： Shigeru Umeno , Keiichiro Hiraki , Hiroaki Taguchi
发明人： Shigeru Umeno , Keiichiro Hiraki , Hiroaki Taguchi
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C01B33/02
CPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/12
摘要： By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.
摘要翻译：通过在不使用OSF区域的位置或宽度作为指标的情况下确定提升速度的控制方向，反馈并调整随后的上拉速度分布。通过CZ法生长不含有COP和位错簇的硅单晶锭，从硅单晶锭切片硅晶片，以生长状态对硅晶片进行反应离子蚀刻，并且包括氧化硅的生长缺陷作为突起暴露在蚀刻表面上。随后生长中的生长状况基于暴露的突起产生区域被反馈并调整。因此，可以在不执行热处理以暴露缺陷的情况下执行关于最近批次的反馈。

2. 发明申请

US20100290971A1 SILICON WAFER AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20100290971A1
公开(公告)日：2010-11-18
申请号：US12779968
申请日：2010-05-14
申请人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
发明人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
IPC分类号： H01L21/322 , C01B33/021
CPC分类号： H01L21/3225 , C30B15/00 , C30B29/06 , C30B33/005
摘要： It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.
摘要翻译：可以提供不含COP和位错簇的硅晶片，在生长状态下没有明显的缺陷（包括氧化硅的生长缺陷），例如OSF核和氧沉淀物通过采用硅晶片的制造方法，存在于PV区域中的原子核将被消除或减少，该方法包括以下步骤：通过切克劳斯基法生长单晶硅锭; 从硅锭切出硅晶片; 在氧化气氛中将晶片经受1,250℃或更高10秒钟以上的RTP; 并且在RTP之后去除晶片表面层附近的包含氧化硅的生长缺陷区域。

3. 发明授权

US06747022B2 Calcium salts of 1,5-benzodiazepine derivatives, process for producing the salts and drugs containing the same 有权
标题翻译： 1,5-苯并二氮杂衍生物的钙盐，其制备方法和含有该盐的药物
公开(公告)号：US06747022B2
公开(公告)日：2004-06-08
申请号：US10130305
申请日：2002-08-15
申请人： Katsuo Shinozaki , Masakazu Murata , Kiyoto Maeda , Hiroaki Taguchi , Nobuo Kawase , Naoyoshi Miura
发明人： Katsuo Shinozaki , Masakazu Murata , Kiyoto Maeda , Hiroaki Taguchi , Nobuo Kawase , Naoyoshi Miura
IPC分类号： C07D24312
CPC分类号： C07D243/12
摘要： Provided are calcium salts of a 1,5-benzodiazepine derivative represented by the following formula (I): (wherein, R1 represents a lower alkyl group, R2 represents a phenyl or cyclohexyl group, and Y represents a single bond or a lower alkylene group); a process for preparing the salts; and drugs containing the same as the active ingredient. The compounds exhibit a potent inhibitory activity against the secretion of gastric acid and potent antagonism against gastrin and/or CCK-B receptor.
摘要翻译：提供由下式（I）表示的1,5-苯并二氮杂衍生物的钙盐：其中，R 1表示低级烷基，R 2表示苯基或环己基，Y表示单键或低级亚烷基）; 一种制备盐的方法; 和含有与活性成分相同的药物。化合物对胃酸分泌具有有效的抑制活性，并且对胃泌素和/或CCK-B受体有强烈的拮抗作用。

4. 发明授权

US4729995A Pyrimidine 2,4-dioxamate compounds and pharmaceutical compositions 失效
标题翻译：嘧啶2,4-二氧杂环戊烷化合物和药物组合物
公开(公告)号：US4729995A
公开(公告)日：1988-03-08
申请号：US033734
申请日：1987-04-03
申请人： Hiroaki Taguchi , Takeo Katsushima , Masakazu Ban , Shoichi Aoki , Akihiko Watanabe
发明人： Hiroaki Taguchi , Takeo Katsushima , Masakazu Ban , Shoichi Aoki , Akihiko Watanabe
IPC分类号： C07D239/48 , C07D239/50 , A61K31/505 , A61K31/535 , C07D413/04
CPC分类号： C07D239/48 , C07D239/50
摘要： Novel pyrimidine compounds of the formula: ##STR1## wherein R.sub.1 and R.sub.1 ' are each hydrogen atom, a lower alkyl, benzyl, an alkali metal, or ammonium; R.sub.2 is hydrogen atom, a halogen atom, a lower alkyl, a lower alkoxy, an aryl, a group of the formula: ##STR2## (wherein R.sub.3 and R.sub.4 are each hydrogen atom, a lower alkyl, or an aryl), or a group of the formula: ##STR3## [wherein R.sub.5 and R.sub.6 are each an alkylene having 1 to 3 carbon atoms, and X is oxygen atom, methylene, or a group of the formula: >N-Y (wherein Y is hydrogen atom, a lower alkyl, benzyl, or an aryl)], which have excellent antiallergic activities and are useful for the prophylaxis and treatment of various allergic diseases, and a pharmaceutical composition containing said pyrimidine compound as an active ingredient.

5. 发明申请

US20100018454A1 Method of producing single crystal 审中-公开
标题翻译：生产单晶的方法
公开(公告)号：US20100018454A1
公开(公告)日：2010-01-28
申请号：US12458410
申请日：2009-07-10
申请人： Ken Hamada , Hiroaki Taguchi , Kazuyuki Egashira
发明人： Ken Hamada , Hiroaki Taguchi , Kazuyuki Egashira
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B15/20 , C30B15/203 , C30B29/06 , C30B35/00
摘要： After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.
摘要翻译：在原料熔化之后，基于室内条件的时间变化（例如，完成时的加热器温度）来调节原料熔体表面和设置成面对熔体表面的隔热部件之间的距离在完成原料熔化步骤后完成原料熔化步骤和/或完成晶种平衡操作所需的滞后时间之后进行晶种平衡操作。结果，可以有效且高产率地制造单晶，另外，通过改变熔融面和隔热构件之间的距离来控制晶体内部温度梯度，可以控制比率V / G （V：拉伸速度，G：晶体内部温度梯度），从而产生没有诸如COP和/或位错簇的晶体缺陷的单晶。

6. 外观设计

USD558863S1 Water closet 有权
标题翻译：洗手间
公开(公告)号：USD558863S1
公开(公告)日：2008-01-01
申请号：US29274355
申请日：2007-04-19
申请人： Hiroaki Taguchi
设计人： Hiroaki Taguchi

7. 发明授权

US5895527A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5895527A
公开(公告)日：1999-04-20
申请号：US791777
申请日：1997-01-29
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/12 , Y10T117/10
摘要： The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.
摘要翻译：本发明涉及一种单晶拉制装置，包括：位于室（气密容器）2内的用于储存半导体熔体21的外坩埚11和安装在外坩埚11内部以形成双坩埚的圆柱形分隔体的内坩埚30，并且其中单晶半导体26被从存储在内坩埚30内部的半导体熔融物21拉出。由此，内坩埚30由石英制成，包括内层A，外层C和中间层B，内层A和外层C，中间层B由具有比构成内坩埚30的内层A和外层C的石英更大的气泡含量的石英制成。

8. 发明授权

US5797638A Hoist apparatus for annular member 失效
标题翻译：环形构件提升装置
公开(公告)号：US5797638A
公开(公告)日：1998-08-25
申请号：US822489
申请日：1997-03-24
申请人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
发明人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
IPC分类号： B66C1/54 , B66C1/66 , C30B15/00 , C30B15/14 , B66C1/62
CPC分类号： C30B15/14 , B66C1/54 , B66C1/66 , C30B15/00
摘要： An annular member hoist apparatus which lifts an annular member and carries and positions the annular member at a predetermined location by a carrier apparatus fitted with an elevator mechanism, including a suspension member suspended from the elevator mechanism, and a plurality of support arms which extend out radially in a horizontal plane from the suspension member. Each of the support arms has an engagement tip portion for supporting the annular member from inside the annular member.
摘要翻译：一种环形构件提升装置，其提升环形构件，并通过装有电梯机构的运载装置将环形构件运送并定位在预定位置，该升降机构包括悬挂在电梯机构上的悬挂构件，以及多个支撑臂，其伸出在悬挂构件的水平面中径向地放置。每个支撑臂具有用于从环形构件内部支撑环形构件的接合末端部分。

9. 发明授权

US5036086A Novel benzothiazole derivatives 失效
标题翻译：新型苯并噻唑衍生物
公开(公告)号：US5036086A
公开(公告)日：1991-07-30
申请号：US501727
申请日：1990-03-30
申请人： Hiroaki Taguchi , Takeo Katsushima , Masakazu Ban , Mitsuru Takahashi , Kiyotaka Shinoda , Akihiko Watanabe
发明人： Hiroaki Taguchi , Takeo Katsushima , Masakazu Ban , Mitsuru Takahashi , Kiyotaka Shinoda , Akihiko Watanabe
IPC分类号： A61K31/425 , A61K31/428 , A61P37/08 , C07D277/82
CPC分类号： C07D277/82
摘要： Novel benzothiazole derivatives of the formula (I): ##STR1## wherein R.sup.1 is hydrogen atom, a lower alkyl group or a lower acyl group; X and Y are the same or different and are each hydrogen atom, a halogen atom, a lower alkyl group, a lower alkoxy group, nitro group, amino group, cyano group, trifluoromethyl group, a group of the formula: --COOR.sup.2 (wherein R.sup.2 is hydrogen atom, a lower alkyl group, an alkali metal, an alkaline earth metal, or a cation of amine), or a group of the formula: --CONR.sup.3 R.sup.4 (wherein R.sup.3 and R.sup.4 are the same or different and are each hydrogen atom or a lower alkyl group) or a pharmaceutically acceptable acid addition salt thereof, which have excellent anti-allergic activity and are useful for the prophylaxis and treatment of various allergic diseases, and a pharmaceutical composition containing the compound as set forth above as an active ingredient.

10. 发明授权

US10066313B2 Method of producing single crystal 有权
公开(公告)号：US10066313B2
公开(公告)日：2018-09-04
申请号：US12458410
申请日：2009-07-10
申请人： Ken Hamada , Hiroaki Taguchi , Kazuyuki Egashira
发明人： Ken Hamada , Hiroaki Taguchi , Kazuyuki Egashira
IPC分类号： C30B15/20 , C30B15/14 , C30B29/06 , C30B35/00
摘要： After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式