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1. 发明公开

US20240200225A1 GROWTH METHOD FOR SINGLE CRYSTALS OF MAGNESIUM ALUMINATE SPINEL BY EDGE-DEFINED FILM-FED GROWTH TECHNIQUE 审中-公开
公开(公告)号：US20240200225A1
公开(公告)日：2024-06-20
申请号：US18592587
申请日：2024-03-01
申请人： Sinoma Synthetic Crystals Co., Ltd. , Beijing Sinoma Synthetic Crystals Co., Ltd.
发明人： Cunxin Huang , Muyun Lei , Haili Wang , Xiaoliang Wang
IPC分类号： C30B15/34 , C30B15/14 , C30B15/22 , C30B29/26
CPC分类号： C30B15/34 , C30B15/14 , C30B15/22 , C30B29/26
摘要： The present application provides a growth method for single crystals of magnesia-alumina spinel by an edge-defined film-fed growth technique, comprising: putting seed crystals and crystal growth raw materials into a crystal growth furnace; vacuuming the crystal growth furnace, filling with inert gas, heating and melting the crystal growth raw materials; making the seed crystals contact a top end of a seam of a mold, pulling the seed crystals, shouldering, making crystals grow, and annealing to cool down after crystal growth. An upper heat shield and a lower heat shield are arranged above the mold, and a cross section of a slit between the heat shields is a curved surface. The cross section of the slit between the heat shields is controlled as a curved surface, so that the present application achieves the effect of uniform heating of the single crystals of magnesia-alumina spinel in an upward pulling process.

2. 发明授权

US11959189B2 Process for preparing ingot having reduced distortion at late body length 有权
公开(公告)号：US11959189B2
公开(公告)日：2024-04-16
申请号：US16839808
申请日：2020-04-03
申请人： GlobalWafers Co., Ltd.
发明人： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
IPC分类号： C30B15/22 , C30B15/14 , C30B15/20 , C30B30/04
CPC分类号： C30B15/22 , C30B15/14 , C30B15/203 , C30B30/04
摘要： A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

3. 发明公开

US20240068121A1 SYNTHETIC CRUCIBLES WITH RIM COATING 审中-公开
公开(公告)号：US20240068121A1
公开(公告)日：2024-02-29
申请号：US17897677
申请日：2022-08-29
申请人： GlobalWafers Co., Ltd.
发明人： JaeWoo Ryu , Carissima Marie Hudson , TaeWon Yuk , JunHwan Ji
IPC分类号： C30B15/10 , C30B15/22 , C30B29/06
CPC分类号： C30B15/10 , C30B15/22 , C30B29/06
摘要： Synesthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.

4. 发明授权

US10036100B2 Apparatus for producing silicon single crystal 有权
公开(公告)号：US10036100B2
公开(公告)日：2018-07-31
申请号：US15112653
申请日：2015-02-03
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Takahiro Yanagimachi , Masahiro Akiba , Junya Tokue , Susumu Sonokawa
IPC分类号： C30B15/14 , C30B15/20 , C30B29/06 , C30B15/22
CPC分类号： C30B15/203 , C30B15/14 , C30B15/20 , C30B15/22 , C30B29/06
摘要： An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.

5. 发明申请

US20170283980A1 METHOD FOR PRODUCING SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON WAFER 审中-公开
公开(公告)号：US20170283980A1
公开(公告)日：2017-10-05
申请号：US15324856
申请日：2015-04-08
申请人： SUMCO CORPORATION
发明人： Yasuhito NARUSHIMA , Masayuki UTO , Toshimichi KUBOTA
IPC分类号： C30B15/04 , C30B15/22 , C23C16/24 , C30B25/20 , C23C16/02 , C30B29/06 , C30B33/02
CPC分类号： C30B15/04 , C23C16/0209 , C23C16/24 , C30B15/203 , C30B15/206 , C30B15/22 , C30B25/02 , C30B25/20 , C30B29/06 , C30B33/02
摘要： A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.

6. 发明授权

US09624599B2 SiC single crystal manufacturing method using alternating states of supersaturation 有权
公开(公告)号：US09624599B2
公开(公告)日：2017-04-18
申请号：US14350448
申请日：2011-12-09
申请人： Motohisa Kado , Hironori Daikoku , Kazuhiko Kusunoki
发明人： Motohisa Kado , Hironori Daikoku , Kazuhiko Kusunoki
IPC分类号： C30B15/22 , C30B19/04 , C30B29/36 , C30B15/02
CPC分类号： C30B15/22 , C30B15/02 , C30B19/04 , C30B29/36
摘要： A SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In the method, a SiC single crystal is grown in a crucible from a Si solution containing C. The method includes alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, the supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.

7. 发明授权

US09340897B2 Method for controlling the diameter of a single crystal to a set point diameter 有权
标题翻译：用于将单晶体的直径控制到设定点直径的方法
公开(公告)号：US09340897B2
公开(公告)日：2016-05-17
申请号：US14285752
申请日：2014-05-23
申请人： SILTRONIC AG
发明人： Thomas Schroeck
IPC分类号： C30B15/22 , C30B29/00 , C30B29/06 , C30B15/26
CPC分类号： C30B15/22 , C30B15/26 , C30B29/00 , C30B29/06
摘要： The diameter of a single crystal is controlled to a set point diameter during pulling of the single crystal from a melt contained in a crucible and which forms a meniscus at a phase boundary on the edge of the single crystal, the meniscus having a height which corresponds to the distance between the phase boundary and a level of the surface of the melt outside the meniscus, comprising repeatedly: determining the diameter of a bright ring on the meniscus; calculating a diameter of the single crystal while taking into account the diameter of the bright ring and the dependency of the diameter of the bright ring on the height of the meniscus and on the diameter of the single crystal itself; and calculating at least one manipulated variable for controlling the diameter of the single crystal on the basis of the difference between the calculated diameter of the single crystal and the set point diameter of the single crystal.
摘要翻译：在单晶体从包含在坩埚中的熔体中拉出单晶并且在单晶边缘处的相边界处形成弯液面时，单晶的直径被控制到设定点直径，弯液面的高度对应于相对于弯液面以外的相边界和熔体表面的水平之间的距离，包括重复：确定弯月面上的亮环的直径; 计算单晶的直径，同时考虑到亮环的直径和亮环的直径对弯液面的高度和单晶本身的直径的依赖性; 并且基于计算的单晶体的直径和单晶的设定点直径之间的差来计算用于控制单晶直径的至少一个操作变量。

8. 发明申请

US20150017086A1 SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURE THEREOF 审中-公开
标题翻译：硅单晶及其制造方法
公开(公告)号：US20150017086A1
公开(公告)日：2015-01-15
申请号：US14328042
申请日：2014-07-10
申请人： GlobalWafers Japan Co., Ltd.
发明人： Yuta NAGAI , Satoko Nakagawa , Kazuhiko Kashima
IPC分类号： C30B15/20 , H01L21/02 , C30B29/06 , H01L29/16 , C30B15/22 , C30B15/30
CPC分类号： C30B15/203 , C30B15/20 , C30B15/22 , C30B15/30 , C30B15/305 , C30B29/06 , H01L21/02381 , H01L29/16 , H01L29/7393
摘要： A silicon single crystal manufacturing method includes: applying a transverse magnetic field to a melt of polysilicon with a carbon concentration of at most 1.0×1015 atoms/cm3 as a raw material; rotating the crucible at 5.0 rpm or less; allowing inert gas to flow at rate A (m/sec) of formula (1) at a position 20-50% of Y above the melt surface; controlling the rate A within the range of 0.2 to 5,000/d (m/sec) (d: crystal diameter (mm)); and reducing the total power of side and bottom heaters by 3 to 30% and the side heater power by 5 to 45% until the solidified fraction reaches 30%. A = [ Q · 760 1000 · 60 · P · α ] / [ π · X · Y · 10 - 6 ] ( 1 ) Q: Inert gas volumetric flow rate (L/min) P: Pressure (Torr) in furnace X: Radiation shield opening diameter Y: Distance (mm) from raw material melt surface to radiation shield lower end α: Correction coefficient
摘要翻译：硅单晶制造方法包括：以碳浓度为1.0×1015原子/ cm3以下的多晶硅熔体作为原料施加横向磁场; 使坩埚以5.0rpm或更少的速度旋转; 允许惰性气体以等于（1）的速率A（m / sec）在熔体表面上方的20-50％的位置流动; 控制速率A在0.2〜5,000 / d（m / sec）（d：晶体直径（mm））的范围内; 并将侧加热器和底部加热器的总功率降低3至30％，侧加热器功率降低5至45％，直到固化部分达到30％。 A = [Q·760 1000·60·P·α] / [＆pgr ·X·Y·10 - 6]（1）Q：惰性气体体积流量（L / min）P：炉内压力（Torr）X：辐射屏蔽开口直径Y：原料熔体表面至辐射屏蔽下端α：校正系数

9. 发明申请

US20140360427A1 METHOD FOR PRODUCING THE GROWTH OF A SEMICONDUCTOR MATERIAL 有权
标题翻译：生产半导体材料生长的方法
公开(公告)号：US20140360427A1
公开(公告)日：2014-12-11
申请号：US14465875
申请日：2014-08-22
申请人： Societe Francaise de Detecteurs Infrarouges- Sofradir
发明人： Sylvain Paltrier
IPC分类号： C30B11/00 , H01L21/02 , C30B11/14
CPC分类号： C30B11/003 , C30B11/00 , C30B11/002 , C30B11/14 , C30B15/22 , C30B29/10 , C30B29/48 , H01L21/02376 , H01L21/02428 , H01L21/02562 , H01L21/02625 , H01L21/02645 , Y10S117/911 , Y10T117/1024
摘要： A method for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom. The method further comprises an element capable of floating on the surface of the melt, and equipped with a substantially central bore, intended for receiving a seed crystal for permitting the nucleation leading to the preparation of a seed crystal, and also supporting the seed crystal above the melt while maintaining it in contact with the melt in order to permit the continued crystallization from the seed crystal by lowering the temperature gradient.
摘要翻译：用于生产半导体材料，特别是II-VI型的生长的方法使用在真空或受控气氛下放置在密封灯泡中的半导体熔体，灯泡经受足够的温度梯度，以首先保持在液态下熔化，然后使其从表面向底部逐渐结晶。该方法还包括能够漂浮在熔体表面上并具有基本上中心孔的元件，其用于接收晶种以允许成核导致晶种的制备，并且还支撑上述晶种熔体，同时保持其与熔体接触，以允许通过降低温度梯度从晶种继续结晶。

10. 发明授权

US08888911B2 Method of producing single crystal silicon 有权
标题翻译：单晶硅的制造方法
公开(公告)号：US08888911B2
公开(公告)日：2014-11-18
申请号：US12875607
申请日：2010-09-03
申请人： Masayuki Uto , Tuneaki Tomonaga , Toshimichi Kubota , Fukuo Ogawa , Yasuhito Narushima
发明人： Masayuki Uto , Tuneaki Tomonaga , Toshimichi Kubota , Fukuo Ogawa , Yasuhito Narushima
IPC分类号： C30B15/22 , C30B29/06 , C30B15/20 , C30B15/04 , C30B15/00 , C30B15/30
CPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/20 , C30B15/22 , C30B15/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.
摘要翻译：本发明提供一种能够通过在晶体生长期间防止细胞生长而生产具有较低电阻率的单晶硅的技术，特别是在向熔融硅原料中添加相对大量的掺杂剂的情况下。具体地说，本发明提供了一种通过切克劳斯基法生产单晶硅的方法，包括当单晶硅被拉起时通过控制固 - 液界面的高度来制造具有较低电阻率的单晶硅。

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