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1. 发明公开

US20240352616A1 SYSTEMS AND METHODS FOR MICROVOID ANALYSIS IN CRYSTALS GROWN BY CONTINUOUS CZOCHRALSKI PULLERS 审中-公开
公开(公告)号：US20240352616A1
公开(公告)日：2024-10-24
申请号：US18635262
申请日：2024-04-15
申请人： GlobalWafers Co., Ltd.
发明人： Matteo Pannocchia , Francesca Marchese , Enrico Rigon
IPC分类号： C30B15/26 , C30B15/00 , C30B15/10 , C30B29/06
CPC分类号： C30B15/26 , C30B15/002 , C30B15/10 , C30B29/06
摘要： A computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to: a) receive at least one image of a silicon melt of a crystal in a crucible; b) execute a model trained to segment the at least one image into different classes; c) analyze segmentation to determine a quality of the crystal; and/or d) approve or reject the crystal based upon the analysis.

2. 发明公开

US20240309542A1 EXTERNAL CRUCIBLE ACCOMMODATING SILICON MELT AND SILICON SINGLE CRYSTAL INGOT GROWTH APPARATUS INCLUDING THE SAME 审中-公开
公开(公告)号：US20240309542A1
公开(公告)日：2024-09-19
申请号：US18408851
申请日：2024-01-10
申请人： SK SILTRON CO., LTD.
发明人： Ji Hoon Kang , Se Hun Kim , Ji Soo Yu
IPC分类号： C30B15/10 , C30B15/14 , C30B29/06
CPC分类号： C30B15/10 , C30B15/14 , C30B29/06
摘要： An external crucible accommodating a silicon melt is disclosed. The external crucible includes a body configured to accommodate a silicon melt and divided into first to n-th sections. At least one of the first to n-th sections is formed to have a shape different from shapes of remaining ones of the first to n-th sections.

3. 发明授权

US12084787B2 Methods for forming a unitized crucible assembly 有权
公开(公告)号：US12084787B2
公开(公告)日：2024-09-10
申请号：US18179633
申请日：2023-03-07
申请人： GlobalWafers Co., Ltd.
发明人： Richard Joseph Phillips , Salvador Zepeda , Patrick Fredrick Boegemann, III , William Luter
IPC分类号： C30B15/00 , B22C9/00 , B28B1/00 , B28B1/26 , B28B7/00 , B28B7/16 , C04B35/00 , C04B38/00 , C30B15/10 , C30B15/12 , C30B29/06 , C30B35/00
CPC分类号： C30B15/10 , B22C9/00 , B28B1/261 , B28B7/16 , C04B38/00 , C30B15/002 , C30B15/12 , C30B29/06 , C30B35/002 , C04B2235/3418 , C04B2235/6027 , C04B2235/606 , C04B2235/656
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

4. 发明授权

US12084785B2 Method and apparatus for pulling single crystal 有权
公开(公告)号：US12084785B2
公开(公告)日：2024-09-10
申请号：US17771880
申请日：2020-10-20
申请人： GLOBALWAFERS JAPAN CO., LTD.
发明人： Shingo Narimatsu
IPC分类号： C30B15/04 , C30B15/10 , C30B29/06
CPC分类号： C30B15/04 , C30B15/10 , C30B29/06
摘要： A method and an apparatus of pulling single crystals are provided that allows adding dopants efficiently into the silicon melt without causing to generate dislocations and obtainment of single crystals with low resistivity, during forming the former half of a product portion after the formation of the shoulder, when pulled up from the silicon melt by the Czochralski method. The method includes steps of forming an inert gas flow G that flows from above toward the silicon melt M1 along the inside of a heat shield 7 disposed to surround the silicon crystal C to be grown in the furnace and expands in radial directions along the surface of the silicon melt and is exhausted to the outside of the furnace, gasifying a dopant in the furnace, discharging the gasified dopant into the inside of the heat shield, and flowing the gasified dopant carried by the inert gas flow.

5. 发明公开

US20240254030A1 MANUFACTURING METHOD FOR HIGH-QUALITY QUARTZ CRUCIBLE 审中-公开
公开(公告)号：US20240254030A1
公开(公告)日：2024-08-01
申请号：US18631507
申请日：2024-04-10
申请人： JINZHOU YOUXIN QUARTZ TECHNOLOGY CO., LTD
发明人： Man CHEN , Zonghui LI , Jian ZHU , Ye WANG , Zhen WANG , Zhiqiang ZHANG
IPC分类号： C03B19/06 , C30B15/10 , C30B29/06
CPC分类号： C03B19/066 , C30B15/10 , C30B29/06
摘要： A manufacturing method for high-quality quartz crucible uses a vacuum arc method to melt, the positioning of the graphite electrode and dwell time at each position meet following requirements in which: taking a position of an upper end surface of a mold opening as a zero point, an end of the graphite electrode is marked as + when above the zero point, marked as − when below the zero point; a starting position of the graphite electrode is +0.10˜0.30 times an outer diameter of the crucible, dwell time ≥2 minutes, then the position is descended sequentially in accordance with a stepwise positioning method, staying for a period of time every time descending to a position, the graphite electrode continuously releases a high-temperature arc to melt crucible blank during a corresponding period of time at a corresponding position, and reaches a bottom polishing position after moving at least 3 times.

6. 发明公开

US20240141546A1 METHOD FOR EVALUATING QUARTZ GLASS CRUCIBLE, METHOD FOR MANUFACTURING THE SAME, AND QUARTZ GLASS CRUCIBLE 审中-公开
公开(公告)号：US20240141546A1
公开(公告)日：2024-05-02
申请号：US18279767
申请日：2022-02-25
申请人： SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
发明人： Yu ISHIHARA , Yuji BABA , Tetsuji UEDA , Yuya YOKOSAWA
IPC分类号： C30B15/10
CPC分类号： C30B15/10
摘要： A method for evaluating a quartz glass crucible constituted by an outer layer formed of an opaque quartz glass containing a bubble, and an inner layer formed of a transparent quartz glass. The method includes steps of preparing a quartz glass crucible to be evaluated, irradiating the quartz glass crucible to be evaluated with ultraviolet rays as an excitation light, detecting a blue fluorescence emitted from the quartz glass crucible irradiated with the ultraviolet rays, and evaluating a state of oxygen deficiency defects in the outer layer of the quartz glass crucible on the basis of existence or non-existence of the blue fluorescence. The method allows hydrogen doping and water vapor introduction to attain nondestructive and easy evaluation on the state of the oxygen deficiency defects generated in the quartz glass crucible.

7. 发明授权

US11939696B2 Thin plate-shaped single-crystal production equipment and thin plate-shaped single-crystal production method 有权
公开(公告)号：US11939696B2
公开(公告)日：2024-03-26
申请号：US17610890
申请日：2021-02-12
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B15/10 , C30B15/16 , C30B15/30 , C30B23/00 , C30B35/00
CPC分类号： C30B15/16 , C30B15/10 , C30B15/30 , C30B23/00 , C30B35/002
摘要： [Object] To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method that can produce a thin plate-shaped single crystal having a uniform dopant concentration at an optimum chemical composition and a thickness of several hundreds of micrometers continuously at low cost with high precision even when the single crystal is a single crystal of an incongruent melting material or a solid solution material or a single crystal of a congruent melting material.
[Solution] Thin plate-shaped single-crystal production equipment includes: an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for production of a thin plate-shaped single crystal with an infrared ray to melt the upper surface; and an elevator apparatus that causes a lower surface of a thin plate-shaped seed single crystal to be immersed in a melt melted using the infrared ray irradiation apparatus and formed on the upper surface and then pulls the thin plate-shaped seed single crystal immersed in the melt upward. The thin plate-shaped single-crystal production equipment is configured such that, by using the elevator apparatus to immerse the lower surface of the thin plate-shaped seed single crystal in the melt formed on the upper surface of the raw material lump for the production of the thin plate-shaped single crystal using the infrared ray irradiation apparatus, growth of a single crystal is started from the lower surface of the immersed thin plate-shaped seed single crystal and that, by using the elevator apparatus to pull the thin plate-shaped seed single crystal upward, the thin plate-shaped single crystal is produced continuously.

8. 发明授权

US11932962B2 Systems and methods for production of silicon using a horizontal magnetic field 有权
公开(公告)号：US11932962B2
公开(公告)日：2024-03-19
申请号：US17658049
申请日：2022-04-05
申请人： GlobalWafers Co., Ltd.
发明人： JaeWoo Ryu , JunHwan Ji , WooJin Yoon , Richard J. Phillips , Carissima Marie Hudson
IPC分类号： C30B15/10 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04
CPC分类号： C30B15/10 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04
摘要： A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

9. 发明授权

US11891718B2 Method and apparatus for growing silicon single crystal ingot 有权
公开(公告)号：US11891718B2
公开(公告)日：2024-02-06
申请号：US17578573
申请日：2022-01-19
申请人： SK Siltron Co., LTD.
发明人： Hyun Ju Hwang , Sang Hee Kim , Kyung Tae Park
IPC分类号： C30B15/22 , C30B29/06 , C30B15/10 , C30B15/14 , C30B15/36
CPC分类号： C30B15/22 , C30B15/10 , C30B15/14 , C30B15/36 , C30B29/06
摘要： Embodiments provide a method of growing a silicon single crystal ingot, the method including growing a silicon single crystal ingot having crystal orientation of (111) using the Czochralski method, measuring a diameter of the silicon single crystal ingot, calculating a length of a facet of the silicon single crystal ingot, calculating a correction formula for a rotation speed of a seed and a correction formula for a pulling speed of the silicon single crystal ingot based on the calculated facet length, and correcting the rotation speed of the seed and the pulling speed of the silicon single crystal ingot based on a result of the calculation.

10. 发明授权

US11884594B2 High strength shaped aluminas and a method of producing such high strength shaped aluminas 有权
公开(公告)号：US11884594B2
公开(公告)日：2024-01-30
申请号：US17366277
申请日：2021-07-02
申请人： Sasol (USA) Corporation
发明人： David A. Barclay , Mark M. Chavez
IPC分类号： C04B35/111 , C04B35/626 , C04B35/63 , C30B15/10 , C30B35/00 , C01F7/023 , C01F7/025 , C04B35/632 , C09K8/80 , B01J2/10
CPC分类号： C04B35/111 , C01F7/023 , C01F7/025 , C04B35/1115 , C04B35/6261 , C04B35/62695 , C04B35/632 , C04B35/6303 , C30B15/10 , C30B35/002 , B01J2/10 , C01P2002/60 , C01P2004/61 , C01P2006/11 , C01P2006/12 , C01P2006/14 , C01P2006/80 , C04B2235/3218 , C04B2235/549 , C04B2235/5436 , C04B2235/5472 , C04B2235/6567 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/95 , C04B2235/96 , C09K8/80
摘要： A method of producing high strength shaped alumina by feeding alumina power into an agglomerator having a shaft with mixers able to displace the alumina power along the shaft, spraying a liquid binder onto the alumina power as it is displaced along the shaft to form a shaped alumina, and calcining the shaped alumina. The shaped alumina produced having a loose bulk density of greater than or equal to 1.20 g/ml, a surface area less than 10 m2/g, impurities of less than 5 ppm of individual metals and less than 9 ppm of impurities in total, and/or crush strength of greater than 12,000 psi.

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