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1. 发明申请

US20080053368A1 Method for producing silicon single crystal and method for producing silicon wafer 审中-公开
标题翻译：硅单晶的制造方法和硅晶片的制造方法
公开(公告)号：US20080053368A1
公开(公告)日：2008-03-06
申请号：US11896563
申请日：2007-09-04
申请人： Shuichi Inami , Kuniharu Inoue , Manabu Moroishi , Tsuguya Fukagawa , Nobuhiro Kusaba
发明人： Shuichi Inami , Kuniharu Inoue , Manabu Moroishi , Tsuguya Fukagawa , Nobuhiro Kusaba
IPC分类号： C30B15/04
CPC分类号： C30B29/06 , C30B15/36
摘要： Exemplary embodiments of the invention provide a method for producing a low-resistivity silicon single crystal in which a silicon wafer having a crystal axis orientation [110] can be obtained and dislocations are sufficiently eliminated, and a method for producing a low-resistance silicon wafer having the crystal axis orientation [110] from the silicon single crystal obtained by the low-resistivity silicon single crystal production method. In the silicon single crystal production method of the invention which employs a Czochralski method, the silicon single crystal whose center axis is inclined by 0.6° to 100 relative to a-crystal axis [110] is grown by dipping a silicon seed crystal in a silicon melt. Boron as a dopant is added in the silicon melt so that a boron concentration ranges from 6.25×1017 to 2.5×1020 atoms/cm3, a center axis of the silicon seed crystal is inclined by 0.6° to 10° relative to the crystal axis [110], and the silicon seed crystal has the substantially same boron concentration as that of a neck portion formed in the single crystal grown from the silicon melt.
摘要翻译：本发明的示例性实施例提供了一种制造低电阻率硅单晶的方法，其中可以获得具有晶轴取向[110]的硅晶片并充分消除位错，以及制造低电阻硅晶片的方法具有从通过低电阻率硅单晶制造方法获得的硅单晶的晶轴取向[110]。在使用切克劳斯基法的本发明的硅单晶制造方法中，通过将硅晶种浸入硅中生长中心轴相对于a晶轴[110]倾斜0.6°至100°的硅单晶熔化。将硼作为掺杂剂添加到硅熔体中，使得硼浓度范围为6.25×10 17至2.5×10 20原子/ cm 3，硅晶种的中心轴相对于晶轴[110]倾斜0.6°〜10°，并且硅晶种具有与形成在从单晶生长的单晶中形成的颈部相同的硼浓度硅熔体。

2. 发明申请

US20080053370A1 Method for producing silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20080053370A1
公开(公告)日：2008-03-06
申请号：US11896564
申请日：2007-09-04
申请人： Shuichi Inami , Kuniharu Inoue , Manabu Moroishi , Tsuguya Fukagawa , Nobuhiro Kusaba
发明人： Shuichi Inami , Kuniharu Inoue , Manabu Moroishi , Tsuguya Fukagawa , Nobuhiro Kusaba
IPC分类号： C30B15/02
CPC分类号： C30B29/06 , C30B15/22 , C30B15/36
摘要： An aspect of the invention provides a silicon single crystal production method in which a dislocation-free feature can easily be achieved to enhance crystal quality irrespective of a crystal orientation. In the silicon single crystal production method of the invention, by a Czochralski method, in dipping the seed crystal in the melt, a melt temperature is set to an optimum temperature at which the seed crystal is brought into contact with a melt surface, the melt temperature is lowered, the seed crystal is pulled up while a pulling rate of the seed crystal is increased, and the pulling rate is kept at a constant rate to form the neck portion at the time that a pulling diameter reaches a target neck diameter. The invention is suitable to the case in which a silicon single crystal having a crystal orientation is pulled up using the seed crystal having the crystal orientation .
摘要翻译：本发明的一个方面提供了一种硅单晶制造方法，其中无论晶体取向如何，都可以容易地实现无位错特征以提高晶体质量。在本发明的硅单晶制造方法中，通过切克劳斯基法，将晶种浸入熔融物中，将熔融温度设定为晶种与熔融表面接触的最佳温度，熔融降低晶种，同时提高晶种的拉伸速度，并且在拉伸直径达到目标颈部直径的时刻，拉伸速率保持恒定的速度形成颈部。本发明适用于使用具有晶体取向<110>的晶种将具有晶体取向<110>的单晶硅上拉的情况。

3. 发明授权

US06461426B2 Method of supplying silicon raw material, method of producing silicon single crystal, and poly-silicon 有权
标题翻译：提供硅原料的方法，制造硅单晶的方法和多晶硅
公开(公告)号：US06461426B2
公开(公告)日：2002-10-08
申请号：US09726611
申请日：2000-12-01
申请人： Kuniharu Inoue , Jiro Inoue , Hazimu Ohnishi , Hisao Yamamoto
发明人： Kuniharu Inoue , Jiro Inoue , Hazimu Ohnishi , Hisao Yamamoto
IPC分类号： C30B1520
CPC分类号： C30B15/02
摘要： The production efficiency of silicon single crystal produced by additional charge or recharge method is improved by avoiding loss due to undissolved portion of poly-silicon rod supplied in the additional charge or recharge. A poly-silicon rod 20 as an additional charge is brought down in a silicon melt 11 in a crucible 10, while being directly supported by a seed crystal 40. The poly-silicon rod 20 is brought down to be totally supplied to the silicon melt 11, and then silicon single crystal 44 is pulled using the seed crystal 40.
摘要翻译：通过额外的充电或再充电方法产生的硅单晶的生产效率通过避免由于额外充电或再充电中提供的多硅棒的未溶解部分而导致的损耗而得到改善。作为附加电荷的多硅棒20在坩埚10中的硅熔体11中被降低，同时由晶种40直接支撑。多晶硅棒20被全部供给硅熔体 11，然后使用晶种40拉出硅单晶44。

4. 发明授权

US6110272A Method for producing silicon single crystal 有权
标题翻译：硅单晶的制造方法
公开(公告)号：US6110272A
公开(公告)日：2000-08-29
申请号：US162133
申请日：1998-09-29
申请人： Katsunori Aikawa , Kuniharu Inoue
发明人： Katsunori Aikawa , Kuniharu Inoue
IPC分类号： C30B15/00 , C30B15/02 , C30B29/06 , H01L21/208 , C30B15/20
CPC分类号： C30B15/02
摘要： A method of loading a crucible, comprises loading at least one polycrystalline silicon rod into the crucible. Lump and/or granular polycrystalline silicon may also be loaded into the crucible. Especially when loaded into the crucible in a close-packed pyramidal configuration, a high loading density is achieved.
摘要翻译：一种装载坩埚的方法，包括将至少一个多晶硅棒装入坩埚中。块状和/或粒状多晶硅也可以装载到坩埚中。特别是当以紧密堆积的金字塔形构造装载到坩埚中时，实现了高负载密度。

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