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1. 发明授权

US10793970B2 Method of fabricating a turbine engine part 有权
公开(公告)号：US10793970B2
公开(公告)日：2020-10-06
申请号：US16310238
申请日：2017-06-14
申请人： SAFRAN AIRCRAFT ENGINES , SAFRAN , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) , UNIVERSITE CLAUDE BERNARD LYON 1
发明人： Amélie Potelle , Omar Benamara , Kheirreddine Lebbou , Michaël Podgorski
IPC分类号： C30B15/00 , C30B15/20 , C04B35/109 , C30B21/06 , C30B29/24 , C30B29/28 , F01D5/28 , F01D9/02
摘要： A method of fabricating a turbine engine part, the method including fabricating an ingot out of ceramic material of eutectic composition by performing the Czochralski process including putting a seed of the ingot that is to be obtained into contact with a molten bath of a mixture of eutectic composition in order to initiate the formation of the ingot on the seed, the mixture including at least two ceramic compounds; drawing the ingot from the molten bath while imposing on the ingot that is being formed a drawing speed less than or equal to 10 mm/h together with rotation at a speed of rotation less than or equal to 50 rpm; and machining the ingot as fabricated in this way in order to obtain the turbine engine part.

2. 发明授权

US08801854B2 Method for evaluating metal contamination of silicon single crystal 有权
标题翻译：评估硅单晶金属污染的方法
公开(公告)号：US08801854B2
公开(公告)日：2014-08-12
申请号：US13913732
申请日：2013-06-10
申请人： Shunji Kuragaki
发明人： Shunji Kuragaki
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/20 , C30B29/06
摘要： A method for evaluating metal contamination of a silicon single crystal grown by the Czochralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible comprises the steps of: setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal; applying the voltage; collecting a sample from the non-convertible portion grown in association with the voltage application; and evaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method is adopted. In a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied such that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied.
摘要翻译：一种用于通过使用可在晶体悬挂构件和坩埚之间施加电压的拉制装置的切克劳斯基法生长的单晶硅的金属污染物的方法包括以下步骤：将晶体悬挂构件设置为负极，同时在用于生长硅单晶的不可转换部分的工艺中将坩埚设置为正极; 施加电压; 从与电压施加相关联地生长的不可转换部分收集样品; 并通过采用表面光电压法的分析来评估样品的金属污染。在生长硅单晶的最终产品可转换部分的过程中，施加电压，使得将晶体悬挂构件设定为正极，同时将坩埚设定为负极，或施加电压。

3. 发明授权

US08771415B2 Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer 有权
标题翻译：硅单晶，硅单晶锭和硅晶片的制造方法
公开(公告)号：US08771415B2
公开(公告)日：2014-07-08
申请号：US12604627
申请日：2009-10-23
申请人： Shigeru Umeno , Keiichiro Hiraki , Hiroaki Taguchi
发明人： Shigeru Umeno , Keiichiro Hiraki , Hiroaki Taguchi
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C01B33/02
CPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/12
摘要： By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.
摘要翻译：通过在不使用OSF区域的位置或宽度作为指标的情况下确定提升速度的控制方向，反馈并调整随后的上拉速度分布。通过CZ法生长不含有COP和位错簇的硅单晶锭，从硅单晶锭切片硅晶片，以生长状态对硅晶片进行反应离子蚀刻，并且包括氧化硅的生长缺陷作为突起暴露在蚀刻表面上。随后生长中的生长状况基于暴露的突起产生区域被反馈并调整。因此，可以在不执行热处理以暴露缺陷的情况下执行关于最近批次的反馈。

4. 发明授权

US08500905B2 Kyropoulos sapphire single crystal growing apparatus using elliptic crucible 失效
标题翻译： Kyropoulos蓝宝石单晶生长装置使用椭圆形坩埚
公开(公告)号：US08500905B2
公开(公告)日：2013-08-06
申请号：US13344498
申请日：2012-01-05
申请人： Jong Kwan Park
发明人： Jong Kwan Park
IPC分类号： C30B17/00 , C30B15/00 , C30B9/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B11/00 , C30B28/06 , C30B35/00 , C30B29/20
CPC分类号： C30B17/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/06 , C30B28/10 , C30B29/20 , C30B35/00 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1092
摘要： Disclosed is a sapphire single crystal growing apparatus using the Kyropoulos method, and more particularly, is a Kyropoulos sapphire single crystal growing apparatus using an elliptic crucible, which can increase the recovery rate by the elliptic crucible and anisotropic heating.
摘要翻译：公开了使用Kyropoulos方法的蓝宝石单晶生长装置，更具体地，是使用椭圆形坩埚的Kyropoulos蓝宝石单晶生长装置，其可以通过椭圆形坩埚提高回收率和各向异性加热。

5. 发明授权

US08337615B2 Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer 有权
标题翻译：用于制造具有近似多边形横截面的单晶硅晶片和相应的单晶Si晶片的方法
公开(公告)号：US08337615B2
公开(公告)日：2012-12-25
申请号：US11910683
申请日：2006-04-04
申请人： Nikolai Abrosimov , Anke Luedge , Andris Muiznieks , Helge Riemann
发明人： Nikolai Abrosimov , Anke Luedge , Andris Muiznieks , Helge Riemann
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B13/30 , C30B13/20 , C30B29/06 , Y10T428/24479
摘要： A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.
摘要翻译：制造具有近似多边形横截面且具有与区域拉伸的Si晶体相同的材料性质的单晶Si晶片和单晶Si晶片的方法。该方法包括从旋转的悬挂熔滴垂直向下拉动晶体的至少一个瓶颈。晶体的旋转速度降低到0至小于1rpm。在晶体生长阶段，Si单晶锭以大致多边形横截面垂直向下拉。使用电感器在与拉出的Si单晶锭的截面形状相对应的晶体的生长相界面处产生温度分布。生长以期望的拉伸长度结束，并且将Si单晶锭切割成具有大致多边形横截面的晶片。

6. 发明授权

US08313577B2 Apparatus for producing single crystal silicon 有权
标题翻译：单晶硅制造装置
公开(公告)号：US08313577B2
公开(公告)日：2012-11-20
申请号：US12343798
申请日：2008-12-24
申请人： Noboru Chikusa , Teruhisa Kitagawa , Masaki Ito , Takanori Ito
发明人： Noboru Chikusa , Teruhisa Kitagawa , Masaki Ito , Takanori Ito
IPC分类号： C30B35/00 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B13/00 , C30B13/20 , C30B13/32 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1064
摘要： An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.
摘要翻译：一种用于制造单晶硅的装置，包括：感应加热线圈，设置在多晶硅棒周围，用于熔合多晶硅棒; 放热环，其具有覆盖所述导电构件的石英涂层构件; 支撑构件，其以可旋转的方式支撑放热环并穿过壳体的壁; 操作装置，其使所述支撑构件旋转并使所述放热环在所述放热环位于所述感应加热线圈附近的加热位置和所述放热环从所述加热位置退出的待机位置之间往复运动; 密封构件，其设置在所述壳体的壁与所述支撑构件之间并且在其间保持所述密封构件; 以及冷却流路，其形成在所述支撑部件中并使冷却介质流动。

7. 发明授权

US08172941B2 Method and device for producing semiconductor wafers of silicon 失效
标题翻译：用于制造硅半导体晶片的方法和装置
公开(公告)号：US08172941B2
公开(公告)日：2012-05-08
申请号：US12002881
申请日：2007-12-19
申请人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
发明人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/203 , C30B15/30 , C30B30/04 , Y10T117/1016 , Y10T117/1032
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.
摘要翻译：硅的半导体晶片通过从包含在坩埚中的熔体中拉出单晶并从拉出的单晶切片半导体晶片来产生，在拉伸单晶期间，热量被传送到与熔体边界处的生长单晶的中心单晶，施加CUSP磁场，使得CUSP磁场的中性表面与熔体表面至少50mm的距离与单晶的牵引轴相交。因此，合适的装置包含CUSP场，其定位成使得中性场与坩埚中的晶体的轴线相距熔融表面50mm以上。

8. 发明授权

US08133318B2 Epitaxially coated silicon wafer with 110 orientation and method for producing it 失效
标题翻译：具有110取向的外延涂覆硅晶片及其制造方法
公开(公告)号：US08133318B2
公开(公告)日：2012-03-13
申请号：US12454906
申请日：2009-05-26
申请人： Erich Daub , Hans Oelkrug , Oliver Schmelmer
发明人： Erich Daub , Hans Oelkrug , Oliver Schmelmer
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B23/00 , C30B25/00 , C30B28/12
CPC分类号： C30B29/06 , C30B15/36 , C30B25/02 , H01L21/02008 , H01L21/02027 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02587 , H01L21/02609 , Y10T428/24355
摘要： An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted direction forms an angle φ with the direction in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.
摘要翻译：外延涂覆的硅晶片包括相对于{110}晶面取向取向的平面，其中单晶硅的<110>方向倾斜角度＆amp;θ; 从正常到晶片表面和倾斜<110>方向的投影形成一个角度＆在晶圆方向<-110>和＆thetas; 由0＆nlE;＆thetas;＆nlE; 3°和45°＆nlE;＆phgr;＆nlE; 90°，以及所有对称等效方向。

9. 发明授权

US07279041B2 Atomic layer deposition methods and atomic layer deposition tools 有权
标题翻译：原子层沉积方法和原子层沉积工具
公开(公告)号：US07279041B2
公开(公告)日：2007-10-09
申请号：US11170809
申请日：2005-06-30
申请人： Gurtej S. Sandhu , Trung Tri Doan
发明人： Gurtej S. Sandhu , Trung Tri Doan
IPC分类号： C30B21/06
CPC分类号： H01L21/67167 , C23C16/45546 , C23C16/54 , H01L21/67098 , H01L21/67207 , H01L21/6732
摘要： An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.
摘要翻译：原子层沉积方法包括将多个半导体晶片定位到原子层沉积室中。沉积前体从与室内接收的晶片的个体相关联的单个气体入口发射，有效地在相应的室内形成相应的单层。在形成单层之后，从与容纳在室内的晶片的个体相关联的各个气体入口排出吹扫气体。原子层沉积工具包括低于大气压的负载室，低于大气压的转移室和多个原子层沉积室。公开了其他方面和实现。

10. 发明申请

US20070169683A1 NITROGEN-DOPED SILICON SUBSTANTIALLY FREE OF OXIDATION INDUCED STACKING FAULTS 有权
标题翻译：氮化硅不含氧化诱发堆积不良
公开(公告)号：US20070169683A1
公开(公告)日：2007-07-26
申请号：US11623142
申请日：2007-01-15
申请人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
发明人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B19/00
CPC分类号： C30B15/203 , C30B15/206 , C30B29/06
摘要： The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.
摘要翻译：本发明涉及一种形成单晶硅锭或晶片的方法，该方法包含轴向对称区域，其中空位是主要的固有点缺陷，其基本上没有氧化诱导的堆垛层错，并且是氮掺杂以稳定氧沉淀核其中。

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