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1. 发明申请

US20050185454A1 Magnetic tunnel junctions for MRAM devices 有权
标题翻译： MRAM器件的磁隧道结
公开(公告)号：US20050185454A1
公开(公告)日：2005-08-25
申请号：US10785913
申请日：2004-02-24
申请人： Stephen Brown , Arunava Gupta , Ulrich Klostermann , Stuart Papworth Parkin , Wolfgang Raberg , Mahesh Samant
发明人： Stephen Brown , Arunava Gupta , Ulrich Klostermann , Stuart Papworth Parkin , Wolfgang Raberg , Mahesh Samant
IPC分类号： G11C11/00 , G11C11/02 , G11C11/15 , H01L27/22
CPC分类号： H01L43/08 , G11C11/15
摘要： Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.
摘要翻译：制造MTJ记忆单元的方法及其结构。在反铁磁层和MTJ存储单元的被钉扎层之间设置扩散阻挡层，以改善MTJ存储单元的热稳定性。扩散阻挡层可以包括无定形材料或NiFe合金。无定形材料可以设置在隧道结的底表面附近，在自由层内或两者之间。实现了具有改进的热稳定性和降低的Neel耦合的MTJ存储单元。

2. 发明授权

US07149105B2 Magnetic tunnel junctions for MRAM devices 有权
标题翻译： MRAM器件的磁隧道结
公开(公告)号：US07149105B2
公开(公告)日：2006-12-12
申请号：US10785913
申请日：2004-02-24
申请人： Stephen L. Brown , Arunava Gupta , Ulrich Klostermann , Stuart Stephen Papworth Parkin , Wolfgang Raberg , Mahesh Samant
发明人： Stephen L. Brown , Arunava Gupta , Ulrich Klostermann , Stuart Stephen Papworth Parkin , Wolfgang Raberg , Mahesh Samant
IPC分类号： G11C11/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L43/08 , G11C11/15
摘要： Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.
摘要翻译：制造MTJ记忆单元的方法及其结构。在反铁磁层和MTJ存储单元的被钉扎层之间设置扩散阻挡层，以改善MTJ存储单元的热稳定性。扩散阻挡层可以包括无定形材料或NiFe合金。无定形材料可以设置在隧道结的底表面附近，在自由层内或两者之间。实现了具有改进的热稳定性和降低的Neel耦合的MTJ存储单元。

3. 发明申请

US20050277206A1 STRUCTURE AND METHOD OF PATTERNING A MAGNETIC TUNNEL JUNCTION STACK FOR A MAGNETO-RESISTIVE RANDOM ACCESS MEMORY 有权
标题翻译：用于磁电阻随机存取存储器的磁性隧道结构堆栈的结构和方法
公开(公告)号：US20050277206A1
公开(公告)日：2005-12-15
申请号：US10709999
申请日：2004-06-11
申请人： Michael Gaidis , David Abraham , Stephen Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
发明人： Michael Gaidis , David Abraham , Stephen Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
IPC分类号： G11C11/14 , G11C11/16 , H01L27/22 , H01L43/12
CPC分类号： G11C11/16 , H01L27/222 , H01L43/12
摘要： A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
摘要翻译：提供了一种图案化磁性隧道结（MTJ）堆叠的方法。根据这种方法，形成具有自由层，钉扎层和设置在自由层和被钉扎层之间的隧道势垒层的MTJ堆叠。 MTJ堆叠的第一区域被屏蔽，而MTJ的自由层在第二区域中被暴露。然后，自由层在第二区域中被电气地且磁性地不起作用。

4. 发明授权

US07211446B2 Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory 有权
标题翻译：图案化用于磁阻随机存取存储器的磁性隧道结叠层的方法
公开(公告)号：US07211446B2
公开(公告)日：2007-05-01
申请号：US10709999
申请日：2004-06-11
申请人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
发明人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/12
摘要： A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
摘要翻译：提供了一种图案化磁性隧道结（MTJ）堆叠的方法。根据这种方法，形成具有自由层，钉扎层和设置在自由层和被钉扎层之间的隧道势垒层的MTJ堆叠。 MTJ堆叠的第一区域被屏蔽，而MTJ的自由层在第二区域中被暴露。然后，自由层在第二区域中被电气地且磁性地不起作用。

5. 发明授权

US07888757B2 Magnetic random access memory (MRAM) device on thermally-sensitive substrate 失效
标题翻译：热敏基片上的磁性随机存取存储器（MRAM）器件
公开(公告)号：US07888757B2
公开(公告)日：2011-02-15
申请号：US11923874
申请日：2007-10-25
申请人： Arunava Gupta
发明人： Arunava Gupta
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L43/12 , H01L27/12 , H01L27/222 , H01L27/226 , H01L2221/68363
摘要： A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
摘要翻译：一种在低温基板上形成磁存储器件（及其结构）的方法，包括：将该存储器件形成在涂有可快速加热的可分解材料层的透明基板上，形成预定的高压，并将存储器件到低温基板。

6. 发明授权

US06552339B1 Micro goniometer for scanning probe microscopy 失效
标题翻译：用于扫描探针显微镜的微测角仪
公开(公告)号：US06552339B1
公开(公告)日：2003-04-22
申请号：US09572209
申请日：2000-05-17
申请人： Arunava Gupta , Ravi Saraf
发明人： Arunava Gupta , Ravi Saraf
IPC分类号： G01N2300
CPC分类号： G01Q70/06 , G01B7/30 , G01Q20/04 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B2005/0002 , Y10S977/852 , Y10S977/872
摘要： A goniometer for performing scanning probe microscopy on a substrate surface is disclosed. The goniometer has a cantilever, having a cantilevered end and a supported end and a tip disposed at the cantilevered end of the cantilever. The goniometer also has a block disposed at the supported end of the cantilever. The block has at least one pair of piezoelectric layers, a pair of electrodes disposed about each individual piezoelectric layer such that varying a potential difference applied between the individual electrodes of a pair of electrodes causes the corresponding piezoelectric layer to deform, and a first insulating material disposed between the individual electrodes for insulating the individual electrodes from each other. The individual piezoelectric layers are deformed at different rates resulting in a deformity of the block and tilting of the cantilever and tip connected therewith. Also disclosed are methods of using the goniometer of the present invention to measure the interactive forces between two molecular structures using a scanning probe microscope equipped with a goniometer of the present invention.
摘要翻译：公开了一种用于在衬底表面上执行扫描探针显微镜的测角器。测角器具有悬臂，具有悬臂端和支撑端，以及设置在悬臂悬臂端的尖端。测角器还具有设置在悬臂的支撑端处的块。该块具有至少一对压电层，围绕每个单独的压电层设置的一对电极，使得改变施加在一对电极的各个电极之间的电势差导致相应的压电层变形，并且第一绝缘材料设置在各个电极之间，用于使各个电极彼此绝缘。单个压电层以不同的速率变形，导致块的变形和与其连接的悬臂和尖端的倾斜。还公开了使用本发明的测角器的方法，使用配备有本发明的测角器的扫描探针显微镜来测量两个分子结构之间的相互作用力。

7. 发明授权

US4617237A Production of conductive metal silicide films from ultrafine powders 失效
标题翻译：从超细粉末制造导电金属硅化物薄膜
公开(公告)号：US4617237A
公开(公告)日：1986-10-14
申请号：US609628
申请日：1984-05-14
申请人： Arunava Gupta , Gary A. West , James T. Yardley
发明人： Arunava Gupta , Gary A. West , James T. Yardley
IPC分类号： C04B41/87 , C23C24/08 , H01L21/28 , B05D3/06 , B05D5/12 , B32B9/04 , B32B19/00
CPC分类号： C23C24/082 , H01L21/28097
摘要： A method of producing a thin film comprising a conductive metal silicide and the products produced therefrom are disclosed. The method is much less complex than methods employed in the prior art for producing conductive thin films and the method reduces substrate damage by maintaining processing temperatures at about 1,000.degree. C. or less. The process employs a stable suspension comprising ultrafine powders in a solvent. This suspension is deposited on a surface of a substrate and is subsequently heated to form a thin conductive film. The thin conductive film comprises polycrystalline metal silicide, preferably a refractory metal silicide, and may also contain silicon. Composites comprising the thin conductive films and a substrate are also disclosed. The process and products are particularly suited for use in VLSI and VVLSI production.
摘要翻译：公开了一种制造包含导电金属硅化物的薄膜及其产生的产品的方法。该方法比用于制造导电薄膜的现有技术中使用的方法复杂得多，并且该方法通过将处理温度维持在约1000℃以下来降低基板损伤。该方法采用在溶剂中包含超细粉末的稳定悬浮液。将该悬浮液沉积在基材的表面上，随后被加热以形成薄的导电膜。薄导电膜包括多晶金属硅化物，优选难熔金属硅化物，并且还可以含有硅。还公开了包括薄导电膜和基底的复合材料。该工艺和产品特别适用于VLSI和VVLSI生产。

8. 发明授权

US06299991B1 Selective growth of ferromagnetic films for magnetic memory, storage-based devices 有权
标题翻译：用于磁存储器，存储器件的铁磁膜的选择性增长
公开(公告)号：US06299991B1
公开(公告)日：2001-10-09
申请号：US09172659
申请日：1998-10-15
申请人： Nestor A. Bojarczuk, Jr. , Peter R. Duncombe , Supratik Guha , Arunava Gupta , Joseph M. Karasinski , Xinwei Li
发明人： Nestor A. Bojarczuk, Jr. , Peter R. Duncombe , Supratik Guha , Arunava Gupta , Joseph M. Karasinski , Xinwei Li
IPC分类号： G11B566
CPC分类号： G11B5/7325 , G11B5/855 , Y10T428/24752 , Y10T428/24802
摘要： A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material
摘要翻译：形成该器件的器件和方法包括将铁磁材料选择性地沉积在衬底上。基板表面部分被具有与铁磁材料的晶体结构至少一个对称关系的晶体结构的材料覆盖

9. 发明授权

US06255671B1 Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair 失效
标题翻译：金属嵌入式钝化层结构，用于微电子互连形成，定制和修复
公开(公告)号：US06255671B1
公开(公告)日：2001-07-03
申请号：US09002840
申请日：1998-01-05
申请人： Nestor Alexander Bojarczuk, Jr. , Supratik Guha , Arunava Gupta , Sampath Purushothaman
发明人： Nestor Alexander Bojarczuk, Jr. , Supratik Guha , Arunava Gupta , Sampath Purushothaman
IPC分类号： H01L3300
CPC分类号： H01L21/76894 , H01L21/76823 , H01L21/76838 , H01L23/5254 , H01L23/5258 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorption of light having a predetermined wavelength. Single films comprised of AlN are also within the scope of this invention, wherein an Al trace or interconnect is formed by laser radiation of wavelength 248 nm so as to contact circuitry that exists under the film. Multilayered stacks of films are also within the scope of the teachings of this invention. In this case each film layer may be separately deposited and then illuminated to selectively form the desired electrical connection(s), which may also connect to conductive feature(s) in an underlying layer, or a plurality of metal nitride layers are stacked bottom to top in order of increasing electronic band gap energy value, and then the conductive features are written into selective ones of the layers by controlling the wavelength of the light to be absorbed in a desired layer. The teachings of this invention can be employed to fabricate fuses and anti-fuses enabling selective circuit customization, test and repair. Also disclosed is a technique for forming electrical resistors in a metal nitride layer by adjusting the electrical resistance of the metallization formed from the metal nitride film layer.
摘要翻译：结构包括形式为MN的金属氮化物膜，其中M选自Ga，In，AlGa，AlIn和AlGaIn。该结构具有通过由具有预定波长的光吸收驱动的热处理而形成在金属氮化物膜内和从金属氮化物膜形成的至少一个导电金属区域。由AlN组成的单个膜也在本发明的范围内，其中通过波长为248nm的激光辐射形成Al迹线或互连，以便接触存在于膜下面的电路。多层薄膜也在本发明的教导的范围内。在这种情况下，每个膜层可以被分开沉积，然后照亮以选择性地形成所需的电连接，其也可以连接到下层中的导电特征，或者多个金属氮化物层被堆叠到底部顶部按照增加电子带隙能量值的顺序，然后通过控制要在所需层中吸收的光的波长将导电特征写入选择层中。本发明的教导可用于制造保险丝和抗熔丝，从而能够进行选择性电路定制，测试和修理。还公开了通过调整由金属氮化物膜层形成的金属化层的电阻来形成金属氮化物层中的电阻器的技术。

10. 发明授权

US6100523A Micro goniometer for scanning microscopy 失效
标题翻译：用于扫描显微镜的微测角仪
公开(公告)号：US6100523A
公开(公告)日：2000-08-08
申请号：US960692
申请日：1997-10-29
申请人： Arunava Gupta , Ravi Saraf
发明人： Arunava Gupta , Ravi Saraf
IPC分类号： G01B7/30 , G01Q10/00 , G01Q20/04 , G01Q60/38 , G01Q80/00 , G01Q90/00 , G11B5/00 , G11B9/00 , G01N13/12
CPC分类号： G01Q70/06 , B82Y35/00 , G01B7/30 , G01Q20/04 , B82Y10/00 , G11B2005/0002 , G11B9/14 , G11B9/1409 , G11B9/1418 , Y10S977/852 , Y10S977/872
摘要： A goniometer for performing scanning probe microscopy on a substrate surface is disclosed. The goniometer has a cantilever, having a cantilevered end and a supported end and a tip disposed at the cantilevered end of the cantilever. The goniometer also has a block disposed at the supported end of the cantilever. The block has at least one pair of piezoelectric layers, a pair of electrodes disposed about each individual piezoelectric layer such that varying a potential difference applied between the individual electrodes of a pair of electrodes causes the corresponding piezoelectric layer to deform, and a first insulating material disposed between the individual electrodes for insulating the individual electrodes from each other. The individual piezoelectric layers are deformed at different rates resulting in a deformity of the block and tilting of the cantilever and tip connected therewith. Also disclosed are methods of using the goniometer of the present invention to measure the interactive forces between two molecular structures using a scanning probe microscope equipped with a goniometer of the present invention.
摘要翻译：公开了一种用于在衬底表面上执行扫描探针显微镜的测角器。测角器具有悬臂，具有悬臂端和支撑端，以及设置在悬臂悬臂端的尖端。测角器还具有设置在悬臂的支撑端处的块。该块具有至少一对压电层，围绕每个单独的压电层设置的一对电极，使得改变施加在一对电极的各个电极之间的电势差导致相应的压电层变形，并且第一绝缘材料设置在各个电极之间，用于使各个电极彼此绝缘。单个压电层以不同的速率变形，导致块的变形和与其连接的悬臂和尖端的倾斜。还公开了使用本发明的测角器的方法，使用配备有本发明的测角器的扫描探针显微镜来测量两个分子结构之间的相互作用力。

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