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1. 发明授权

US07211446B2 Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory 有权
标题翻译：图案化用于磁阻随机存取存储器的磁性隧道结叠层的方法
公开(公告)号：US07211446B2
公开(公告)日：2007-05-01
申请号：US10709999
申请日：2004-06-11
申请人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
发明人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/12
摘要： A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
摘要翻译：提供了一种图案化磁性隧道结（MTJ）堆叠的方法。根据这种方法，形成具有自由层，钉扎层和设置在自由层和被钉扎层之间的隧道势垒层的MTJ堆叠。 MTJ堆叠的第一区域被屏蔽，而MTJ的自由层在第二区域中被暴露。然后，自由层在第二区域中被电气地且磁性地不起作用。

2. 发明授权

US06812141B1 Recessed metal lines for protective enclosure in integrated circuits 失效
标题翻译：集成电路中用于保护外壳的嵌入式金属线
公开(公告)号：US06812141B1
公开(公告)日：2004-11-02
申请号：US10610609
申请日：2003-07-01
申请人： Michael C. Gaidis , Joachim Nuetzel , Walter Glashauser , Eugene O'Sullivan , Gregory Costrini , Stephen L. Brown , Frank Findeis , Chanro Park
发明人： Michael C. Gaidis , Joachim Nuetzel , Walter Glashauser , Eugene O'Sullivan , Gregory Costrini , Stephen L. Brown , Frank Findeis , Chanro Park
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76834 , H01L21/76849 , H01L21/76897 , H01L23/5226 , H01L23/53238 , H01L27/222 , H01L2924/0002 , H01L2924/00
摘要： Encapsulating areas of metallization in a liner material, such as Tantalum, Tantalum Nitride, Silicon Carbide allows aggressive or harsh processing steps to be used. These aggresive processing steps offer the possibility of fabricating new device architectures. In addition, by encapsulating the areas of metallization, metal ion migration and electromigration can be prevented. Further, the encapsulated areas of metallization can serve as a self-aligning etch mask. Thus, vias etched between adjacent areas of metallization allow the area of the substrate allocated to the via to be significantly reduced without increasing the possibility of electrical shorts to the adjacent areas of metallization.
摘要翻译：衬垫材料如钽，氮化钽，碳化硅中的金属化的封装区域允许使用侵蚀性或苛刻的加工步骤。这些突出的处理步骤提供了制造新器件架构的可能性。此外，通过封装金属化区域，可以防止金属离子迁移和电迁移。此外，金属化的封装区域可以用作自对准蚀刻掩模。因此，蚀刻在相邻的金属化区域之间的通孔允许分配给通孔的衬底的面积被显着地减小，而不增加相邻金属化区域的电短路的可能性。

3. 发明授权

US07149105B2 Magnetic tunnel junctions for MRAM devices 有权
标题翻译： MRAM器件的磁隧道结
公开(公告)号：US07149105B2
公开(公告)日：2006-12-12
申请号：US10785913
申请日：2004-02-24
申请人： Stephen L. Brown , Arunava Gupta , Ulrich Klostermann , Stuart Stephen Papworth Parkin , Wolfgang Raberg , Mahesh Samant
发明人： Stephen L. Brown , Arunava Gupta , Ulrich Klostermann , Stuart Stephen Papworth Parkin , Wolfgang Raberg , Mahesh Samant
IPC分类号： G11C11/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L43/08 , G11C11/15
摘要： Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.
摘要翻译：制造MTJ记忆单元的方法及其结构。在反铁磁层和MTJ存储单元的被钉扎层之间设置扩散阻挡层，以改善MTJ存储单元的热稳定性。扩散阻挡层可以包括无定形材料或NiFe合金。无定形材料可以设置在隧道结的底表面附近，在自由层内或两者之间。实现了具有改进的热稳定性和降低的Neel耦合的MTJ存储单元。

4. 发明授权

US07344896B2 Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof 有权
标题翻译：用于磁记忆单元导电线的铁磁衬垫及其制造方法
公开(公告)号：US07344896B2
公开(公告)日：2008-03-18
申请号：US10899488
申请日：2004-07-26
申请人： Rainer Leuschner , Wolfgang Raberg , Stephen L. Brown , Frank Findeis , Sivanandha K. Kanakasabapathy , Michael Vieth
发明人： Rainer Leuschner , Wolfgang Raberg , Stephen L. Brown , Frank Findeis , Sivanandha K. Kanakasabapathy , Michael Vieth
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L21/76844 , H01L21/76846 , H01L21/76849 , H01L21/76874 , H01L27/222
摘要： Methods of forming ferromagnetic liners on the top surface and sidewalls of conductive lines of magnetic memory devices. The ferromagnetic liners increase the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. In one embodiment, an in-bound pole is formed at the bottom edge of conductive lines, further concentrating the flux.
摘要翻译：在磁存储器件的导线的顶表面和侧壁上形成铁磁衬垫的方法。铁磁衬垫增加通过导线的电流的通量浓度，减少了切换磁存储单元所需的写入电流。在一个实施例中，在导线的底部边缘处形成入极，进一步集中焊剂。

5. 发明授权

US07535069B2 Magnetic tunnel junction with enhanced magnetic switching characteristics 有权
标题翻译：磁隧道结，具有增强的磁性开关特性
公开(公告)号：US07535069B2
公开(公告)日：2009-05-19
申请号：US11452741
申请日：2006-06-14
申请人： David W. Abraham , Stephen L. Brown , Stuart P. Parkin , Daniel Worledge
发明人： David W. Abraham , Stephen L. Brown , Stuart P. Parkin , Daniel Worledge
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： G11C11/16
摘要： A semiconductor device formed between a wordline and a bitline comprises a growth layer, an antiferromagnetic layer formed on the growth layer, a pinned layer formed on the antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, and a free layer formed on the tunnel barrier. The wordline and bitline are arranged substantially orthogonal to one another. The growth layer, in turn, comprises tantalum and has a thickness greater than about 75 Angstroms. Moreover, the pinned layer comprises one or more pinned ferromagnetic sublayers. The tunnel barrier comprises magnesium oxide. Finally, the free layer comprises two or more free ferromagnetic sublayers, each free ferromagnetic sublayer having a magnetic anisotropy axis that is oriented about 45 degrees from the wordline and bitline. The semiconductor device may comprise, for example, a magnetic tunnel junction for use in magnetoresistive random access memory (MRAM) circuitry.
摘要翻译：形成在字线和位线之间的半导体器件包括生长层，形成在生长层上的反铁磁层，形成在反铁磁性层上的被钉扎层，形成在钉扎层上的隧道势垒层，以及形成在该引线层上的自由层隧道屏障。字线和位线彼此基本正交地布置。生长层又包括钽，其厚度大于约75埃。此外，被钉扎层包括一个或多个钉扎铁磁子层。隧道势垒包括氧化镁。最后，自由层包括两个或更多个自由铁磁子层，每个自由铁磁子层具有与字线和位线约45度的磁各向异性轴。半导体器件可以包括例如用于磁阻随机存取存储器（MRAM）电路中的磁性隧道结。

6. 发明申请

US20120326314A1 LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND 审中-公开
标题翻译：大颗粒，导电性化合物的低电阻率TUNGSTEN
公开(公告)号：US20120326314A1
公开(公告)日：2012-12-27
申请号：US13604959
申请日：2012-09-06
申请人： Stephen L. Brown , John Bruley , Cyril Cabral, JR. , Sandro Callegari , Martin M. Frank , Michael A. Guillorn , Marinus Hopstaken , Vijay Narayanan , Keith Kwong Hon Wong
发明人： Stephen L. Brown , John Bruley , Cyril Cabral, JR. , Sandro Callegari , Martin M. Frank , Michael A. Guillorn , Marinus Hopstaken , Vijay Narayanan , Keith Kwong Hon Wong
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L29/4966 , H01L21/28088 , H01L23/53266 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： A layered structure and semiconductor device and methods for fabricating a layered structure and semiconductor device. The layered structure includes: a base layer including a material containing titanium nitride, tantalum nitride, or a combination thereof; a conductive layer including a material containing: tantalum aluminum nitride, titanium aluminum nitride, tantalum silicon nitride, titanium silicon nitride, tantalum hafnium nitride, titanium hafnium nitride, hafnium nitride, hafnium carbide, tantalum carbide, vanadium nitride, niobium nitride, or any combination thereof; and a tungsten layer. The semiconductor device includes: a semiconductor substrate; a base layer; a conductive layer; and a tungsten layer.
摘要翻译：层状结构和半导体器件以及用于制造层状结构和半导体器件的方法。层状结构包括：包含含有氮化钛，氮化钽或其组合的材料的基底层; 包括含有氮化铝钽，氮化铝钛，氮化硅氮化物，氮化钛，氮化钽，氮化钛，氮化铪，碳化铪，碳化钽，氮化钒，氮化铌或任何组合的材料的导电层的; 和钨层。半导体器件包括：半导体衬底; 基层; 导电层; 和钨层。

7. 发明授权

US07516945B2 Cable anchor bracket 失效
标题翻译：电缆锚架
公开(公告)号：US07516945B2
公开(公告)日：2009-04-14
申请号：US11775436
申请日：2007-07-10
申请人： Dean C. Alberson , Roger P. Bligh , D. Lance Bullard, Jr. , C. Eugene Buth , Hayes E. Ross, Jr. , Stephen L. Brown
发明人： Dean C. Alberson , Roger P. Bligh , D. Lance Bullard, Jr. , C. Eugene Buth , Hayes E. Ross, Jr. , Stephen L. Brown
IPC分类号： E01F15/04
CPC分类号： E01F15/143
摘要： According to one embodiment, a cable anchor system for an end terminal includes a cable anchor bracket configured to couple to a guardrail, in which the cable anchor bracket includes a flat plate having an aperture formed therein and a plurality of protrusions extending from a plane containing the aperture. The protrusions are configured to releasably engage the guardrail.
摘要翻译：根据一个实施例，用于端子端子的电缆锚固系统包括电缆固定支架，其被配置为联接到护栏，其中电缆锚固支架包括其中形成有孔的平板和从包含光圈。突起被构造成可释放地接合护栏。

8. 发明授权

US06221032B1 Continuous passive motion device having a rehabilitation enhancing mode of operation 有权
标题翻译：具有恢复增强操作模式的连续被动运动装置
公开(公告)号：US06221032B1
公开(公告)日：2001-04-24
申请号：US09436639
申请日：1999-11-09
申请人： Frederick W. Blanchard , Stephen L. Brown , Dwayne Hofstatter , D. Chris Linville , Jeffrey K. Pohl , James R. Vetter, Jr.
发明人： Frederick W. Blanchard , Stephen L. Brown , Dwayne Hofstatter , D. Chris Linville , Jeffrey K. Pohl , James R. Vetter, Jr.
IPC分类号： A61H100
CPC分类号： A61H1/024 , A61H1/0255 , A61H2201/018 , A61H2201/1215 , A61H2201/1623 , A61H2201/164 , A61H2201/1676 , A61H2201/5007
摘要： A continuous passive motion device which may be used in providing physical therapy for a patient's knee by moving the patient's leg through a plurality of cycles of motion in a treatment session includes an “Oscillation Zone” range of motion feature that permits the machine to be operated in such a manner that the patient's knee is flexed and his leg extended through a critical or working range of motion more frequently than through the non-critical range of motion, or the remainder of the range of motion of the device, so as to increase the portion of time of a treatment session that is spent in the working range of motion. A preferred embodiment of the device allows the patient's knee to be flexed, extended and held in certain positions a predetermined number of times per cycle, so as to provide a treatment regimen which replicates the holding and stretching one might receive through physical therapy conducted by a therapist or a physician. A preferred embodiment of the invention also has “Soft Turns” capability, wherein the carriage holding the patient's leg is decelerated, at a controlled rate over a controlled distance, from the operational speed to zero, as the carriage approaches an extension or flexion limit, and wherein the carriage is accelerated in the same fashion as the carriage moves away from the extension or flexion limit.
摘要翻译：连续的被动运动装置可用于通过在治疗过程中通过多个运动周期移动患者的腿来为患者的膝盖提供物理治疗，包括允许机器操作的“振荡区”运动特征范围使得患者的膝盖弯曲并且腿部比通过非临界运动范围或装置的运动范围的其余部分更频繁地延伸到关键或工作运动范围，以增加在运动的工作范围内花费的治疗会话的时间部分。该装置的优选实施例允许患者的膝盖在每个周期中弯曲，延伸并保持在某些位置预定次数，以便提供复制通过物理治疗进行的保持和拉伸的治疗方案治疗师或医生。本发明的优选实施例还具有“软匝”功能，其中，当滑架接近延伸或屈曲极限时，保持患者腿部的托架以受控距离的受控速度从操作速度减速到零，并且其中滑架以与滑架远离伸出或弯曲极限移动相同的方式被加速。

9. 发明授权

US5081207A Poly pyrrole from CO/olefin terpolymer 失效
标题翻译：来自CO / OLEFIN TERPOLYMER的POLY PYRROLE
公开(公告)号：US5081207A
公开(公告)日：1992-01-14
申请号：US528579
申请日：1990-05-24
申请人： Stephen L. Brown
发明人： Stephen L. Brown
IPC分类号： C08G61/10 , C08G61/12 , C08G67/00 , C08G67/02 , C08G73/06
CPC分类号： C08G67/02 , C08G73/0611
摘要： A nitrogen-containing polymer is prepared by reacting ammonia or an amine selected from C.sub.1 to C.sub.50 primary alkylamines, benzylamine and substituted benzylamines with a linear terpolymer comprised of alternating --CO-- and --(A)-- units, the --(A)-- units comprising a mixture of --CH.sub.2 CH.sub.2 -- units and --CH.sub.2 CH(R)-- units wherein R is C.sub.1 to C.sub.6 alkyl or phenyl.

10. 发明授权

US08989839B2 Method and apparatus for diagnosis of tumor activity using tumor interstitial fluid pressure 有权
标题翻译：使用肿瘤间质液压力诊断肿瘤活动的方法和装置
公开(公告)号：US08989839B2
公开(公告)日：2015-03-24
申请号：US13585784
申请日：2012-08-14
申请人： Mordechay Schlesinger , Long Jian Liu , James R. Ewing , Stephen L. Brown
发明人： Mordechay Schlesinger , Long Jian Liu , James R. Ewing , Stephen L. Brown
IPC分类号： A61B5/03 , A61B5/055 , A61B5/00
CPC分类号： A61B5/03 , A61B5/0059
摘要： A scanning apparatus, is used to effect multiple images of a tumor in which a contrast agent has been localized as a detectable marker over a selected time to map the change in the imaged marker. The rate of change in the imaged marker and/or contrast intensity of the dyed tissues is used to assess tumor aggressiveness and as an early predictor of response to cancer therapy. In particular, following the marking of tumor or cancerous tissues by the initial localization of an imageable contrast agent, the rate of change in the volume and/or area of the imaged marker is used to provide an indication of tumor interstitial fluid pressure (TIFP).
摘要翻译：扫描装置用于在所选择的时间内使造影剂已经被定位为可检测标记的肿瘤的多个图像以映射成像的标记物的变化。使用染色组织的成像标记和/或对比度强度的变化率来评估肿瘤侵袭性，并且作为对癌症治疗反应的早期预测因子。特别地，在通过可成像造影剂的初始定位来标记肿瘤或癌组织之后，使用成像标记物的体积和/或面积的变化率来提供肿瘤间质液压力（TIFP）的指示，。

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