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1. 发明授权

US4617237A Production of conductive metal silicide films from ultrafine powders 失效
标题翻译：从超细粉末制造导电金属硅化物薄膜
公开(公告)号：US4617237A
公开(公告)日：1986-10-14
申请号：US609628
申请日：1984-05-14
申请人： Arunava Gupta , Gary A. West , James T. Yardley
发明人： Arunava Gupta , Gary A. West , James T. Yardley
IPC分类号： C04B41/87 , C23C24/08 , H01L21/28 , B05D3/06 , B05D5/12 , B32B9/04 , B32B19/00
CPC分类号： C23C24/082 , H01L21/28097
摘要： A method of producing a thin film comprising a conductive metal silicide and the products produced therefrom are disclosed. The method is much less complex than methods employed in the prior art for producing conductive thin films and the method reduces substrate damage by maintaining processing temperatures at about 1,000.degree. C. or less. The process employs a stable suspension comprising ultrafine powders in a solvent. This suspension is deposited on a surface of a substrate and is subsequently heated to form a thin conductive film. The thin conductive film comprises polycrystalline metal silicide, preferably a refractory metal silicide, and may also contain silicon. Composites comprising the thin conductive films and a substrate are also disclosed. The process and products are particularly suited for use in VLSI and VVLSI production.
摘要翻译：公开了一种制造包含导电金属硅化物的薄膜及其产生的产品的方法。该方法比用于制造导电薄膜的现有技术中使用的方法复杂得多，并且该方法通过将处理温度维持在约1000℃以下来降低基板损伤。该方法采用在溶剂中包含超细粉末的稳定悬浮液。将该悬浮液沉积在基材的表面上，随后被加热以形成薄的导电膜。薄导电膜包括多晶金属硅化物，优选难熔金属硅化物，并且还可以含有硅。还公开了包括薄导电膜和基底的复合材料。该工艺和产品特别适用于VLSI和VVLSI生产。

2. 发明授权

US4558017A Light induced production of ultrafine powders comprising metal silicide powder and silicon 失效
标题翻译：光诱导生产包含金属硅化物粉末和硅的超细粉末
公开(公告)号：US4558017A
公开(公告)日：1985-12-10
申请号：US609629
申请日：1984-05-14
申请人： Arunava Gupta , Gary A. West , James T. Yardley
发明人： Arunava Gupta , Gary A. West , James T. Yardley
IPC分类号： C01B33/00 , B01J12/02 , B01J19/12 , C01B33/06
CPC分类号： B01J19/121 , B01J12/02 , C01B33/06
摘要： A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicide containing films. The process employs gaseous reactants comprising a metal halide and a silicon-containing compound. The reactants are exposed to high intensity light to produce ultrafine powders. In addition to the production of metal silicide powders, the ultrafine powders may also include silicon powder and metal subhalide powder. The ultrafine powders are particularly suited for use in VLSI and VVLSI production.
摘要翻译：公开了一种生产包含金属硅化物粉末的超细粉末和通过该方法制备的产品的方法。包含金属硅化物粉末的超细粉末理想地适用于形成用于生产含导电金属硅化物的膜的稳定的胶体悬浮液。该方法使用包含金属卤化物和含硅化合物的气态反应物。将反应物暴露于高强度光下以产生超细粉末。除了生产金属硅化物粉末之外，超细粉末还可以包括硅粉末和金属卤化物粉末。超细粉末特别适用于VLSI和VVLSI生产。

3. 发明授权

US4776937A Light induced production of ultrafine powders comprising metal silicide powder 失效
标题翻译：光诱导生产包含金属硅化物粉末的超细粉末
公开(公告)号：US4776937A
公开(公告)日：1988-10-11
申请号：US765638
申请日：1985-08-15
申请人： Arunava Gupta , Gary A. West , James T. Yardley
发明人： Arunava Gupta , Gary A. West , James T. Yardley
IPC分类号： B01J12/02 , B01J19/12 , C01B33/06
CPC分类号： B01J19/121 , B01J12/02 , C01B33/06
摘要： A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicide containing films. The process employs gaseous reactants comprising a metal halide and a silicon-containing compound. The reactants are exposed to high intensity light to produce ultrafine powders. In addition to the production of metal silicide powders, the ultrafine powders may also include silicon powder and metal subhalide powder. The ultrafine powders are particularly suited for use in VLSI and VVLSI production.
摘要翻译：公开了一种生产包含金属硅化物粉末的超细粉末和通过该方法制备的产品的方法。包含金属硅化物粉末的超细粉末理想地适用于形成用于生产含导电金属硅化物的膜的稳定的胶体悬浮液。该方法使用包含金属卤化物和含硅化合物的气态反应物。将反应物暴露于高强度光下以产生超细粉末。除了生产金属硅化物粉末之外，超细粉末还可以包括硅粉末和金属卤化物粉末。超细粉末特别适用于VLSI和VVLSI生产。

4. 发明授权

US4554291A Iron/silicon-based catalyst exhibiting high selectivity to C.sub.2 -C.sub.6 .sub.2 Fischer-Tropsch reactions 失效
标题翻译：在CO / H2费 - 托反应中对C2-C6烯烃具有高选择性的铁/硅基催化剂
公开(公告)号：US4554291A
公开(公告)日：1985-11-19
申请号：US616099
申请日：1984-06-01
申请人： Arunava Gupta , James T. Yardley
发明人： Arunava Gupta , James T. Yardley
IPC分类号： B01J23/745 , B01J37/34 , C07C1/04
CPC分类号： B01J37/349 , B01J23/745 , C07C1/044 , C07C2521/06 , C07C2523/745
摘要： Finely divided, hydrogen-activated catalyst compositions comprising iron, silicon and carbon or iron and silicon that selectively convert gaseous mixtures of CO and H.sub.2, at a temperature of about 150.degree.-450.degree. C. and at pressures of about 10-2000 kPa, into a reaction mixture containing at least about 75% C.sub.2 -C.sub.6 alkenes and no more than about 25% of CH.sub.4 and undesirable CO.sub.2 by-products are disclosed. A wide range of iron/silicon-based catalyst compositions are conveniently prepared by laser pyrolysis and hydrogen-pretreatment and readily reactivated with hydrogen at elevated temperatures.
摘要翻译：精细分离的氢活化催化剂组合物，其包含铁，硅和碳或铁和硅，其在约150-450℃的温度和约10-2000kPa的压力下选择性地转化CO和H 2的气态混合物，转化成含有至少约75％的C 2 -C 6烯烃和不超过约25％的CH 4和不期望的CO 2副产物的反应混合物。各种铁/硅基催化剂组合物通过激光热解和氢预处理方便地制备，并在高温下容易地与氢气再活化。

5. 发明授权

US4468474A Iron/silicon-based catalyst exhibiting high selectivity to C.sub.2 -C.sub.6 .sub.2 Fischer-Tropsch reactions 失效
标题翻译：在CO / H2费 - 托反应中对C2-C6烯烃具有高选择性的铁/硅基催化剂
公开(公告)号：US4468474A
公开(公告)日：1984-08-28
申请号：US494754
申请日：1983-05-16
申请人： Arunava Gupta , James T. Yardley
发明人： Arunava Gupta , James T. Yardley
IPC分类号： B01J19/12 , B01J23/745 , B01J37/34 , C07B61/00 , C07C1/00 , C07C1/04 , C07C11/02 , C07C67/00 , C01B31/36
CPC分类号： B01J19/121 , B01J23/745 , B01J37/349 , C07C1/044 , C07C2521/06 , C07C2523/745
摘要： Finely divided, hydrogen-activated catalyst compositions comprising iron, silicon and carbon or iron and silicon that selectively convert gaseous mixtures of CO and H.sub.2, at a temperature of about 150.degree.-450.degree. C. and at pressures of about 10-2000 kPa, into reaction mixture containing at least about 75% C.sub.2 -C.sub.6 alkenes and no more than about 25% of CH.sub.4 and undesirable CO.sub.2 by-products are disclosed. A wide range of iron/silicon-based catalyst compositions are conveniently prepared by laser pyrolysis and hydrogen-pretreatment and readily reactivated with hydrogen at elevated temperatures.
摘要翻译：精细分离的氢活化催化剂组合物，其包含铁，硅和碳或铁和硅，其在约150-450℃的温度和约10-2000kPa的压力下选择性地转化CO和H 2的气态混合物，包含至少约75％的C 2 -C 6烯烃和不超过约25％的CH 4和不期望的CO 2副产物的反应混合物。各种铁/硅基催化剂组合物通过激光热解和氢预处理方便地制备，并在高温下容易地与氢气再活化。

6. 发明授权

US4568565A Light induced chemical vapor deposition of conductive titanium silicide films 失效
标题翻译：导电硅化钛膜的光诱导化学气相沉积
公开(公告)号：US4568565A
公开(公告)日：1986-02-04
申请号：US609627
申请日：1984-05-14
申请人： Arunava Gupta , Gary A. West , Karl W. Beeson
发明人： Arunava Gupta , Gary A. West , Karl W. Beeson
IPC分类号： C23C16/42 , C23C16/48 , H01L21/28 , H01L21/285 , H01L29/78 , B05D3/06 , B05D5/12
CPC分类号： H01L21/28097 , C23C16/42 , C23C16/483 , H01L21/28052
摘要： Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage associated with high temperature deposition processes. The process comprises the steps of: exposing gas phase reactants comprising a titanium halide and a silicon containing compound to high intensity light; exposing a preheated substrate to the exposed gases to cause a conductive titanium silicide film to be formed thereon; and, maintaining the substrate, throughout the process, at a temperature below that temperature which would induce a thermal reaction between the gas phase reactants. The films and composites produced by the process are particularly suited for use in VLSI and VVLSI production.
摘要翻译：含导电硅化钛的膜和包含基底和膜的复合材料通过光诱导化学气相沉积来制备。该方法消除了对硅化物膜进行退火以产生导电膜的需要，并克服了与高温沉积工艺相关的衬底损伤的问题。该方法包括以下步骤：将包含卤化钛和含硅化合物的气相反应物暴露于高强度光; 将预热的衬底暴露于暴露的气体，以在其上形成导电的硅化钛膜; 并且在整个过程中，在低于该温度的温度下保持底物，这将导致气相反应物之间的热反应。该方法生产的薄膜和复合材料特别适用于VLSI和VVLSI生产。

7. 发明授权

US4490192A Stable suspensions of boron, phosphorus, antimony and arsenic dopants 失效
标题翻译：硼，磷，锑和砷掺杂剂的稳定悬浮液
公开(公告)号：US4490192A
公开(公告)日：1984-12-25
申请号：US502360
申请日：1983-06-08
申请人： Arunava Gupta , Gary A. West , Jeffrey P. Donlan
发明人： Arunava Gupta , Gary A. West , Jeffrey P. Donlan
IPC分类号： C30B31/02 , H01L21/22 , H01L21/225
CPC分类号： C30B31/02 , H01L21/2225 , H01L21/2254 , H01L21/2257 , Y10S252/95 , Y10S252/951
摘要： Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than about (1.mu.) comprising a member selected from the group consisting of B.sub.x Si.sub.y, B.sub.x N.sub.y, P.sub.x Si.sub.y, P.sub.x N.sub.y, As.sub.x Si.sub.y and Sb.sub.x Si.sub.y wherein x and y vary from about 0.001 to about 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.
摘要翻译：半导体掺杂组合物，其包含（a）掺杂剂材料的悬浮液，所述掺杂剂材料为从0.1D到D的窄尺寸分布的精细分散的球形颗粒形式，其中D是最大颗粒的直径且不大于约（1 包括选自BxSiy，BxNy，PxSiy，PxNy，AsxSiy和SbxSiy的成员，其中x和y从约0.001至约99.999摩尔％变化，（b）有效量的可热降解的聚合有机粘合剂，例如作为聚甲基丙烯酸甲酯; 和（c）公开了一定量的足以溶解所述聚合物有机粘合剂的有机溶剂，例如环己酮，例如聚甲基丙烯酸甲酯，并分散所述掺杂剂材料。还公开了使用本发明的半导体掺杂组合物制备具有宽范围的薄层电阻和结深度的半导体材料的三个扩散方法。为本发明的半导体组合物选择的掺杂剂材料对水分和化学降解较不敏感，从而提供更大的加工范围，更可再现，并且不太容易对半导体衬底造成损害和/或染色。

8. 发明授权

US07888757B2 Magnetic random access memory (MRAM) device on thermally-sensitive substrate 失效
标题翻译：热敏基片上的磁性随机存取存储器（MRAM）器件
公开(公告)号：US07888757B2
公开(公告)日：2011-02-15
申请号：US11923874
申请日：2007-10-25
申请人： Arunava Gupta
发明人： Arunava Gupta
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L43/12 , H01L27/12 , H01L27/222 , H01L27/226 , H01L2221/68363
摘要： A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
摘要翻译：一种在低温基板上形成磁存储器件（及其结构）的方法，包括：将该存储器件形成在涂有可快速加热的可分解材料层的透明基板上，形成预定的高压，并将存储器件到低温基板。

9. 发明授权

US06552339B1 Micro goniometer for scanning probe microscopy 失效
标题翻译：用于扫描探针显微镜的微测角仪
公开(公告)号：US06552339B1
公开(公告)日：2003-04-22
申请号：US09572209
申请日：2000-05-17
申请人： Arunava Gupta , Ravi Saraf
发明人： Arunava Gupta , Ravi Saraf
IPC分类号： G01N2300
CPC分类号： G01Q70/06 , G01B7/30 , G01Q20/04 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B2005/0002 , Y10S977/852 , Y10S977/872
摘要： A goniometer for performing scanning probe microscopy on a substrate surface is disclosed. The goniometer has a cantilever, having a cantilevered end and a supported end and a tip disposed at the cantilevered end of the cantilever. The goniometer also has a block disposed at the supported end of the cantilever. The block has at least one pair of piezoelectric layers, a pair of electrodes disposed about each individual piezoelectric layer such that varying a potential difference applied between the individual electrodes of a pair of electrodes causes the corresponding piezoelectric layer to deform, and a first insulating material disposed between the individual electrodes for insulating the individual electrodes from each other. The individual piezoelectric layers are deformed at different rates resulting in a deformity of the block and tilting of the cantilever and tip connected therewith. Also disclosed are methods of using the goniometer of the present invention to measure the interactive forces between two molecular structures using a scanning probe microscope equipped with a goniometer of the present invention.
摘要翻译：公开了一种用于在衬底表面上执行扫描探针显微镜的测角器。测角器具有悬臂，具有悬臂端和支撑端，以及设置在悬臂悬臂端的尖端。测角器还具有设置在悬臂的支撑端处的块。该块具有至少一对压电层，围绕每个单独的压电层设置的一对电极，使得改变施加在一对电极的各个电极之间的电势差导致相应的压电层变形，并且第一绝缘材料设置在各个电极之间，用于使各个电极彼此绝缘。单个压电层以不同的速率变形，导致块的变形和与其连接的悬臂和尖端的倾斜。还公开了使用本发明的测角器的方法，使用配备有本发明的测角器的扫描探针显微镜来测量两个分子结构之间的相互作用力。

10. 发明授权

US07211446B2 Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory 有权
标题翻译：图案化用于磁阻随机存取存储器的磁性隧道结叠层的方法
公开(公告)号：US07211446B2
公开(公告)日：2007-05-01
申请号：US10709999
申请日：2004-06-11
申请人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
发明人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/12
摘要： A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
摘要翻译：提供了一种图案化磁性隧道结（MTJ）堆叠的方法。根据这种方法，形成具有自由层，钉扎层和设置在自由层和被钉扎层之间的隧道势垒层的MTJ堆叠。 MTJ堆叠的第一区域被屏蔽，而MTJ的自由层在第二区域中被暴露。然后，自由层在第二区域中被电气地且磁性地不起作用。

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