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1. 发明授权

US06906257B2 Metallic coated dielectric substrates 失效
标题翻译：金属涂层电介质基板
公开(公告)号：US06906257B2
公开(公告)日：2005-06-14
申请号：US10318961
申请日：2002-12-13
申请人： Robert J. Saccomanno , Gary A. West
发明人： Robert J. Saccomanno , Gary A. West
IPC分类号： C03C17/42 , C03C25/10 , G02B6/02 , G02B6/036 , G02B6/12 , G02B6/122 , G02B6/132 , H01B7/34 , G02B6/44
CPC分类号： G02B6/02 , C03C17/3607 , C03C17/42 , C03C25/104 , G02B6/02033 , G02B6/023 , G02B6/02395 , G02B6/1221 , G02B6/132 , G02B2006/12169
摘要： A metal/dielectric construction having either an optically transmissive substrate adapted for channeling light therethrough, or a dielectric substrate, an optional adhesion-promoting layer composed of an oxide form of at least one metal or metalloid deposited onto the surface of the substrate, a layer composed of a highly reflective and/or electrically conductive/electromagnetic metal overlaying the adhesion-promoting layer, and a protective layer composed of a parylene polymer film formed over the metal layer.
摘要翻译：一种金属/电介质结构，其具有适于将光通过其中的光学透射基底，或电介质基底，由沉积在基底表面上的至少一种金属或准金属的氧化物形式组成的任选的粘附促进层，由覆盖粘合促进层的高反射和/或导电/电磁金属组成，以及由形成在金属层上的聚对二甲苯聚合物膜构成的保护层。

2. 发明授权

US4568565A Light induced chemical vapor deposition of conductive titanium silicide films 失效
标题翻译：导电硅化钛膜的光诱导化学气相沉积
公开(公告)号：US4568565A
公开(公告)日：1986-02-04
申请号：US609627
申请日：1984-05-14
申请人： Arunava Gupta , Gary A. West , Karl W. Beeson
发明人： Arunava Gupta , Gary A. West , Karl W. Beeson
IPC分类号： C23C16/42 , C23C16/48 , H01L21/28 , H01L21/285 , H01L29/78 , B05D3/06 , B05D5/12
CPC分类号： H01L21/28097 , C23C16/42 , C23C16/483 , H01L21/28052
摘要： Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage associated with high temperature deposition processes. The process comprises the steps of: exposing gas phase reactants comprising a titanium halide and a silicon containing compound to high intensity light; exposing a preheated substrate to the exposed gases to cause a conductive titanium silicide film to be formed thereon; and, maintaining the substrate, throughout the process, at a temperature below that temperature which would induce a thermal reaction between the gas phase reactants. The films and composites produced by the process are particularly suited for use in VLSI and VVLSI production.
摘要翻译：含导电硅化钛的膜和包含基底和膜的复合材料通过光诱导化学气相沉积来制备。该方法消除了对硅化物膜进行退火以产生导电膜的需要，并克服了与高温沉积工艺相关的衬底损伤的问题。该方法包括以下步骤：将包含卤化钛和含硅化合物的气相反应物暴露于高强度光; 将预热的衬底暴露于暴露的气体，以在其上形成导电的硅化钛膜; 并且在整个过程中，在低于该温度的温度下保持底物，这将导致气相反应物之间的热反应。该方法生产的薄膜和复合材料特别适用于VLSI和VVLSI生产。

3. 发明授权

US4558017A Light induced production of ultrafine powders comprising metal silicide powder and silicon 失效
标题翻译：光诱导生产包含金属硅化物粉末和硅的超细粉末
公开(公告)号：US4558017A
公开(公告)日：1985-12-10
申请号：US609629
申请日：1984-05-14
申请人： Arunava Gupta , Gary A. West , James T. Yardley
发明人： Arunava Gupta , Gary A. West , James T. Yardley
IPC分类号： C01B33/00 , B01J12/02 , B01J19/12 , C01B33/06
CPC分类号： B01J19/121 , B01J12/02 , C01B33/06
摘要： A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicide containing films. The process employs gaseous reactants comprising a metal halide and a silicon-containing compound. The reactants are exposed to high intensity light to produce ultrafine powders. In addition to the production of metal silicide powders, the ultrafine powders may also include silicon powder and metal subhalide powder. The ultrafine powders are particularly suited for use in VLSI and VVLSI production.
摘要翻译：公开了一种生产包含金属硅化物粉末的超细粉末和通过该方法制备的产品的方法。包含金属硅化物粉末的超细粉末理想地适用于形成用于生产含导电金属硅化物的膜的稳定的胶体悬浮液。该方法使用包含金属卤化物和含硅化合物的气态反应物。将反应物暴露于高强度光下以产生超细粉末。除了生产金属硅化物粉末之外，超细粉末还可以包括硅粉末和金属卤化物粉末。超细粉末特别适用于VLSI和VVLSI生产。

4. 发明授权

US06586048B2 Method for depositing a barrier coating on a polymeric substrate and composition comprising said barrier coating 失效
公开(公告)号：US06586048B2
公开(公告)日：2003-07-01
申请号：US09828065
申请日：2001-04-05
申请人： Ronald F. Welch, Jr. , Robert J. Saccomanno , Gary A. West
发明人： Ronald F. Welch, Jr. , Robert J. Saccomanno , Gary A. West
IPC分类号： C23C1406
CPC分类号： B05D7/02 , B05D1/60 , B05D3/0254 , B05D3/0493 , C08J7/047 , C08J2321/00 , C08J2383/00 , C08J2465/00 , Y10T428/24975 , Y10T428/31504 , Y10T428/31663 , Y10T428/31931
摘要： The present invention relates to a method for depositing a parylene polymer barrier coating on a polymeric substrate for improving the chemical resistance of the substrate. The method comprises the steps of thoroughly treating a surface portion of the substrate to remove any contaminants, depositing at least one layer of parylene polymer on the contaminant-free surface portion via chemical vapor deposition, and then annealing each of the at least one layer of parylene polymer for a sufficient time. The present invention also relates to a composition for a barrier coating on a polymeric substrate comprising at least one layer of parylene polymer bonded to the surface of the polymeric substrate. The substrate can be a silicone rubber keypad.

5. 发明授权

US5577263A Chemical vapor deposition of fine grained rhenium on carbon based substrates 失效
标题翻译：细粒铼在碳基底上的化学气相沉积
公开(公告)号：US5577263A
公开(公告)日：1996-11-19
申请号：US408234
申请日：1995-03-22
申请人： Gary A. West
发明人： Gary A. West
IPC分类号： C23C16/14 , B22F3/00
CPC分类号： C23C16/14 , Y10T428/12 , Y10T428/12014 , Y10T428/12028 , Y10T428/12035 , Y10T428/12049 , Y10T428/12056 , Y10T428/12181 , Y10T428/12625
摘要： A method for producing a composite element by causing a stream of gaseous rhenium hexafluoride to flow onto a carbon substrate in a chemical vapor deposition reaction. A flow of hydrogen gas causes a reduction of the rhenium hexafluoride to rhenium metal to thereby deposit a uniform layer of rhenium metal onto the surface of the carbon substrate. A fine grain rhenium coating on carbon is produced having an average particle diameter of from about 0.1 to about 25 micrometers. The elements may be used alone or several of them may be bonded together into various articles. Such elements and articles are useful as light weight, high temperature strength, corrosive gas resistant structural elements.
摘要翻译：一种通过在化学气相沉积反应中使六氟化a流流入碳基底上来制造复合元件的方法。氢气流引起六氟化铼还原为铼金属，从而将均匀的铼金属层沉积在碳基板的表面上。产生平均粒径为约0.1至约25微米的碳上的细晶粒铼涂层。元素可以单独使用，也可以将其中的几种结合在一起成为各种制品。这些元件和制品可用作轻质，高温强度，耐腐蚀性气体的结构元件。

6. 发明授权

US4270864A Photoacoustic rotational raman spectroscopy 失效
标题翻译：光声旋转拉曼光谱
公开(公告)号：US4270864A
公开(公告)日：1981-06-02
申请号：US20380
申请日：1979-03-14
申请人： Joseph J. Barrett , Gary A. West
发明人： Joseph J. Barrett , Gary A. West
IPC分类号： G01N21/00 , G01J3/44 , G01N21/65 , G01N29/00
CPC分类号： G01J3/44
摘要： A method and apparatus for spectroscopic material analysis are provided. Two coherent beams of monochromatic radiation are directed through a sample of material. A tuning mechanism adjusts the frequency difference between the radiation beams to equal substantially the rotational frequency of a preselected constituent of the material. Molecular energy of a preselected constituent of the material is increased, thereby producing a detectable signal in the form of a pressure wave. The signal is received by a detecting mechanism which indicates the magnitude thereof.
摘要翻译：提供了一种用于光谱材料分析的方法和装置。两个相干的单色辐射光束被引导通过材料样品。调谐机构调节辐射束之间的频率差异，使得该材料的预选构件的旋转频率基本上相等。材料的预选组分的分子能量增加，从而产生压力波形式的可检测信号。信号由指示其大小的检测机构接收。

7. 发明授权

US5209388A Process for bonding carbonaceous bodies 失效
标题翻译：粘结碳体的方法
公开(公告)号：US5209388A
公开(公告)日：1993-05-11
申请号：US766466
申请日：1991-09-26
申请人： Donald L. Mittendorf , Gary A. West
发明人： Donald L. Mittendorf , Gary A. West
IPC分类号： B23K20/00 , C04B37/00 , C04B41/52 , C04B41/88 , C04B41/89
CPC分类号： C04B35/645 , C04B37/005 , C04B37/006 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2235/6562 , C04B2235/6581 , C04B2237/12 , C04B2237/125 , C04B2237/363 , C04B2237/55 , C04B2237/708 , C04B2237/72 , Y10T428/12625
摘要： A diffusion bonding process for bonding one rhenium-coated carbonaceous body to another. The rhenium-coat surfaces 18,20 of the bodies are coated with ruthenium, and the bodies are diffusion bonded at the interface formed by adjoining ruthenium coats 22,24.
摘要翻译：用于将一个铼涂覆的碳质体结合到另一个的扩散粘合方法。物体的铼涂层表面18,20涂覆有钌，并且在由邻接的钌涂层22,24形成的界面处扩散结合物体。

8. 发明授权

US4814294A Method of growing cobalt silicide films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积法生长钴硅化物膜的方法
公开(公告)号：US4814294A
公开(公告)日：1989-03-21
申请号：US079564
申请日：1987-07-30
申请人： Gary A. West , Karl W. Beeson
发明人： Gary A. West , Karl W. Beeson
IPC分类号： C23C16/42 , H01L21/20 , H01L21/28 , H01L21/285
CPC分类号： H01L21/28581 , C23C16/42 , H01L21/28097 , H01L21/28518
摘要： This invention relates to an improved method of depositing cobalt silicide films on a substrate by chemical vapor deposition at a temperature range of about 100.degree.-400.degree. C. By employing two separate precursors of, preferably, for cobalt, comprised of cobalt carbonyls having a vapor pressure sufficiently high to provide a cobalt stream to support chemical vapor deposition, and for silicon, comprised of silanes or halogenated silanes having a vapor pressure sufficient to support chemical vapor deposition, a cobalt silicide film is grown. The ratio of silicon to cobalt is controlled precisely by varying the substrate temperature while the process is being conducted. In a more specific aspect, the films are grown on substrates of either gallium arsenide or silicon. In the case of silicon, epitaxial growth of the cobalt silicide film is achieved by specific control of process parameters.
摘要翻译：本发明涉及一种在约100-400℃的温度范围内通过化学气相沉积在基底上沉积钴硅化物薄膜的改进方法。通过使用两个独立的钴，优选钴的前体，其由具有蒸汽压力足够高以提供钴流以支持化学气相沉积，并且对于由具有足以支持化学气相沉积的蒸气压的硅烷或卤代硅烷构成的硅生长硅化钴膜。在进行处理时，通过改变衬底温度来精确控制硅与钴的比例。在更具体的方面，膜在砷化镓或硅的衬底上生长。在硅的情况下，通过具体控制工艺参数来实现硅化钴膜的外延生长。

9. 发明授权

US4776937A Light induced production of ultrafine powders comprising metal silicide powder 失效
标题翻译：光诱导生产包含金属硅化物粉末的超细粉末
公开(公告)号：US4776937A
公开(公告)日：1988-10-11
申请号：US765638
申请日：1985-08-15
申请人： Arunava Gupta , Gary A. West , James T. Yardley
发明人： Arunava Gupta , Gary A. West , James T. Yardley
IPC分类号： B01J12/02 , B01J19/12 , C01B33/06
CPC分类号： B01J19/121 , B01J12/02 , C01B33/06
摘要： A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicide containing films. The process employs gaseous reactants comprising a metal halide and a silicon-containing compound. The reactants are exposed to high intensity light to produce ultrafine powders. In addition to the production of metal silicide powders, the ultrafine powders may also include silicon powder and metal subhalide powder. The ultrafine powders are particularly suited for use in VLSI and VVLSI production.
摘要翻译：公开了一种生产包含金属硅化物粉末的超细粉末和通过该方法制备的产品的方法。包含金属硅化物粉末的超细粉末理想地适用于形成用于生产含导电金属硅化物的膜的稳定的胶体悬浮液。该方法使用包含金属卤化物和含硅化合物的气态反应物。将反应物暴露于高强度光下以产生超细粉末。除了生产金属硅化物粉末之外，超细粉末还可以包括硅粉末和金属卤化物粉末。超细粉末特别适用于VLSI和VVLSI生产。

10. 发明授权

US4490192A Stable suspensions of boron, phosphorus, antimony and arsenic dopants 失效
标题翻译：硼，磷，锑和砷掺杂剂的稳定悬浮液
公开(公告)号：US4490192A
公开(公告)日：1984-12-25
申请号：US502360
申请日：1983-06-08
申请人： Arunava Gupta , Gary A. West , Jeffrey P. Donlan
发明人： Arunava Gupta , Gary A. West , Jeffrey P. Donlan
IPC分类号： C30B31/02 , H01L21/22 , H01L21/225
CPC分类号： C30B31/02 , H01L21/2225 , H01L21/2254 , H01L21/2257 , Y10S252/95 , Y10S252/951
摘要： Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than about (1.mu.) comprising a member selected from the group consisting of B.sub.x Si.sub.y, B.sub.x N.sub.y, P.sub.x Si.sub.y, P.sub.x N.sub.y, As.sub.x Si.sub.y and Sb.sub.x Si.sub.y wherein x and y vary from about 0.001 to about 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.
摘要翻译：半导体掺杂组合物，其包含（a）掺杂剂材料的悬浮液，所述掺杂剂材料为从0.1D到D的窄尺寸分布的精细分散的球形颗粒形式，其中D是最大颗粒的直径且不大于约（1 包括选自BxSiy，BxNy，PxSiy，PxNy，AsxSiy和SbxSiy的成员，其中x和y从约0.001至约99.999摩尔％变化，（b）有效量的可热降解的聚合有机粘合剂，例如作为聚甲基丙烯酸甲酯; 和（c）公开了一定量的足以溶解所述聚合物有机粘合剂的有机溶剂，例如环己酮，例如聚甲基丙烯酸甲酯，并分散所述掺杂剂材料。还公开了使用本发明的半导体掺杂组合物制备具有宽范围的薄层电阻和结深度的半导体材料的三个扩散方法。为本发明的半导体组合物选择的掺杂剂材料对水分和化学降解较不敏感，从而提供更大的加工范围，更可再现，并且不太容易对半导体衬底造成损害和/或染色。

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