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1. 发明授权

US06537876B2 Method of manufacturing a semiconductor capacitor having a hemispherical grain layer using a dry cleaning process 失效
标题翻译：使用干洗方法制造具有半球形晶粒层的半导体电容器的方法
公开(公告)号：US06537876B2
公开(公告)日：2003-03-25
申请号：US09799033
申请日：2001-03-06
申请人： Seung-pil Chung , Kyu-hwan Chang , Young-min Kwon , Sang-lock Hah
发明人： Seung-pil Chung , Kyu-hwan Chang , Young-min Kwon , Sang-lock Hah
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L21/02046 , Y10S438/906 , Y10S438/964
摘要： A method of manufacturing a semiconductor device having a hemispherical grain (HSG) layer employs a dry cleaning process. A polysilicon layer is formed on a specific material layer on a semiconductor substrate. Next, a polysilicon pattern, at least a portion of which is exposed, is formed by etching the polysilicon layer. The exposed surface of the polysilicon pattern is then dry cleaned by supplying hydrogen in a plasma state and a fluorine-based gas toward the exposed surface. The exposed surface of the polysilicon pattern may also be wet cleaned before being dry cleaned to wash away pollutants which may have been left thereon. An HSG layer is then formed on the cleaned surface of the polysilicon pattern. After the HSG layer is formed, the surface of the HSG layer may be dry cleaned again by supplying hydrogen in a plasma state and a fluorine-based gas toward the surface of the HSG layer. The surface of the HSG layer may also be further wet cleaned before being dry cleaned. Accordingly, the HSG layer is effectively cleaned without damaging or contaminating the HSG layer, thereby improving the reliability of the semiconductor device.
摘要翻译：制造具有半球形颗粒（HSG）层的半导体器件的方法采用干法处理。在半导体衬底上的特定材料层上形成多晶硅层。接下来，通过蚀刻多晶硅层形成其至少一部分露出的多晶硅图案。然后通过以等离子体状态供给氢气和将氟基气体朝向暴露的表面进行干式清洗。多晶硅图案的暴露表面也可以在干燥清洁之前被湿清洗以洗去可能留在其上的污染物。然后在多晶硅图案的清洁表面上形成HSG层。在形成HSG层之后，可以通过以等离子体状态供给氢，并将氟基气体朝向HSG层的表面再次干燥HSG层的表面。 HSG层的表面也可以在干洗之前进一步湿清洗。因此，HSG层被有效地清洁而不损坏或污染HSG层，从而提高半导体器件的可靠性。

2. 发明授权

US06513538B2 Method of removing contaminants from integrated circuit substrates using cleaning solutions 有权
公开(公告)号：US06513538B2
公开(公告)日：2003-02-04
申请号：US09862525
申请日：2001-05-22
申请人： Seung-pil Chung , Kyu-hwan Chang , Young-min Kwon , Sang-lock Hah
发明人： Seung-pil Chung , Kyu-hwan Chang , Young-min Kwon , Sang-lock Hah
IPC分类号： B08B600
CPC分类号： H01L21/02063 , C11D3/3947 , C11D7/265 , C11D7/36 , C11D11/0047 , H01L21/02046 , Y10S134/902 , Y10S438/906
摘要： A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF6), and trifluorochlorine (ClF3).

3. 发明授权

US5624498A Showerhead for a gas supplying apparatus 失效
标题翻译：供气装置用喷头
公开(公告)号：US5624498A
公开(公告)日：1997-04-29
申请号：US352249
申请日：1994-12-08
申请人： Gil-Gwang Lee , Kazuyuki Fujihara , Kyu-hwan Chang
发明人： Gil-Gwang Lee , Kazuyuki Fujihara , Kyu-hwan Chang
IPC分类号： F17D1/04 , C23C16/44 , C23C16/455 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45565
摘要： A gas supply apparatus, for use in a semiconductor device manufacturing process, provides a showerhead for evenly supplying various kinds of gases to a reaction chamber. The gas supplying apparatus for use in the formation of a thin film of a semiconductor device includes a first porous plate having a plurality of first holes formed throughout its surface, and a central bore formed at its center; and a second porous plate having first projections which are regularly formed throughout its central portion, and second projections which contain depressions continuously formed around the first projections. The gas supplying apparatus evenly distributes gas into the reaction chamber, thereby improving the uniformity of the film thickness to be grown on a substrate.
摘要翻译：用于半导体器件制造工艺的气体供应装置提供一种用于将各种气体均匀地供应到反应室的喷头。用于形成半导体器件的薄膜的气体供给装置包括：第一多孔板，其具有在其整个表面形成的多个第一孔;以及形成在其中心的中心孔; 以及第二多孔板，其具有在其中央部分规则地形成的第一突起，以及包含围绕第一突起连续形成的凹陷的第二突起。气体供给装置将气体均匀地分配到反应室中，从而提高在基板上生长的膜厚度的均匀性。

4. 发明授权

US6092539A In-situ cleaning apparatuses for wafers used in integrated circuit devices and methods of cleaning using the same 失效
标题翻译：用于集成电路器件的晶片的原位清洁装置及使用其的清洁方法
公开(公告)号：US6092539A
公开(公告)日：2000-07-25
申请号：US44279
申请日：1998-03-19
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： H01L21/304 , B08B3/04 , B08B7/00 , H01L21/00 , B08B3/10
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

5. 发明授权

US06607654B2 Copper-plating elecrolyte containing polyvinylpyrrolidone and method for forming a copper interconnect 有权
标题翻译：含有电解质电解质的聚乙烯吡咯烷酮和形成铜互连的方法
公开(公告)号：US06607654B2
公开(公告)日：2003-08-19
申请号：US09899228
申请日：2001-07-06
申请人： Sun-jung Lee , Kyu-hwan Chang , Hyeon-deok Lee
发明人： Sun-jung Lee , Kyu-hwan Chang , Hyeon-deok Lee
IPC分类号： C25D338
CPC分类号： H01L21/76877 , C25D3/38 , C25D7/12 , H01L21/2885 , Y10T428/12528
摘要： A copper-plating electrolyte includes an aqueous copper salt solution, a water-soluble &bgr;-naphtholethoxylate compound having the formula wherein n is an integer from 10 to 24, one selected from the group consisting of a disulfide having the formula XO3S(CH2)3SS(CH2)3SOX3 and a water-soluble mercaptopropanesulfonic acid or salt thereof having the formula HS(CH2)3SO3X, where X is sodium, potassium, or hydrogen, a water-soluble polyethylene glycol having a molecular weight ranging from about 4,600 to about 10,000, and a water-soluble polyvinylpyrrolidone having a molecular weight ranging from about 10,000 to about 1,300,000.
摘要翻译：镀铜电解质包括铜盐水溶液，具有方解石的水溶性β-萘基乙氧基化合物，n为10-24的整数，选自具有式XO 3 S（CH 2）3 SS的二硫化物 CH2）3SOX3和具有式HS（CH2）3SO3X的水溶性巯基丙磺酸或其盐，其中X为钠，钾或氢，分子量范围为约4,600至约10,000的水溶性聚乙二醇，和分子量范围为约10,000至约1,300,000的水溶性聚乙烯吡咯烷酮。

6. 发明授权

US06335287B1 Method of forming trench isolation regions 有权
标题翻译：形成沟槽隔离区域的方法
公开(公告)号：US06335287B1
公开(公告)日：2002-01-01
申请号：US09637788
申请日：2000-08-11
申请人： Hong-kyu Hwang , Bo-un Yoon , Kyu-hwan Chang , Sang-rok Hah
发明人： Hong-kyu Hwang , Bo-un Yoon , Kyu-hwan Chang , Sang-rok Hah
IPC分类号： H01L12302
CPC分类号： H01L21/76229 , H01L21/31053 , H01L21/31055
摘要： To form isolation trenches on a semiconductor substrate, chemical mechanical polishing (CMP) stopping patterns are formed on the substrate, and the substrate is then etched using the CMP stopping patterns as a mask. Then an insulating material is deposited to fill the trenches and cover the CMP stopping patterns. The insulating material is etched using a CMP process until the CMP stopping patterns become exposed, and is then etched using a wet or dry etching process. The wet or dry etching is continued until protruding insulating material above a surface of the substrate is a predetermined thickness, which corresponds to an amount of the insulating material that is etched during removal of the CMP stopping patterns and during intermediate processes prior to formation of a gate oxide layer.
摘要翻译：为了在半导体衬底上形成隔离沟槽，在衬底上形成化学机械抛光（CMP）停止图案，然后使用CMP停止图案作为掩模蚀刻衬底。然后沉积绝缘材料以填充沟槽并覆盖CMP停止图案。使用CMP工艺蚀刻绝缘材料，直到CMP停止图案露出，然后使用湿法或干蚀刻工艺进行蚀刻。继续进行湿法或干蚀刻蚀刻，直到基片表面上方的突出的绝缘材料为预定的厚度，这对应于在去除CMP停止图案期间以及在形成CMP停止图案之间的中间工艺期间被蚀刻的绝缘材料的量栅氧化层。

7. 发明授权

US06638855B1 Method of filling contact hole of semiconductor device 有权
标题翻译：填充半导体器件接触孔的方法
公开(公告)号：US06638855B1
公开(公告)日：2003-10-28
申请号：US09502200
申请日：2000-02-10
申请人： Kyu-hwan Chang , Yong-sun Ko , Chang-lyong Song , Seung-pil Chong
发明人： Kyu-hwan Chang , Yong-sun Ko , Chang-lyong Song , Seung-pil Chong
IPC分类号： H01L214763
CPC分类号： H01L21/02063 , H01L21/02046 , H01L21/31116 , H01L21/76814 , H01L21/76877
摘要： A method of filling a contact hole of a semiconductor device preceded by dry cleaning for removing a damaged layer resulting from dry etching is provided. The method includes selectively exposing an underlying material layer by a dry etch and dry cleaning including passing plasma excited from a source gas over the exposed underlying material layer to remove the damaged layer formed from the dry etch. Subsequently, an electrically conductive layer with which to fill the contact hole is formed. The formation of the electrically conductive layer is performed in a separate chamber connected sequentially to a chamber for performing the dry cleaning to prevent the exposed underlying material layer inside the dry cleaned contact hole from being exposed to a source of contamination.
摘要翻译：提供了一种在干法清洗之前填充半导体器件的接触孔的方法，用于去除由干蚀刻产生的损伤层。该方法包括通过干式蚀刻和干式清洗选择性地暴露下层材料层，包括使从源气体激发的等离子体流过暴露的下层材料层，以去除由干蚀刻形成的损伤层。随后，形成用于填充接触孔的导电层。导电层的形成在依次连接到用于执行干洗的室的单独的室中进行，以防止干式清洁的接触孔内的暴露的下层材料层暴露于污染源。

8. 发明授权

US06277204B1 Methods for cleaning wafers used in integrated circuit devices 有权
标题翻译：用于清洁集成电路器件中使用的晶片的方法
公开(公告)号：US06277204B1
公开(公告)日：2001-08-21
申请号：US09593344
申请日：2000-06-14
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： B08B302
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

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