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1. 发明授权

US5624498A Showerhead for a gas supplying apparatus 失效
标题翻译：供气装置用喷头
公开(公告)号：US5624498A
公开(公告)日：1997-04-29
申请号：US352249
申请日：1994-12-08
申请人： Gil-Gwang Lee , Kazuyuki Fujihara , Kyu-hwan Chang
发明人： Gil-Gwang Lee , Kazuyuki Fujihara , Kyu-hwan Chang
IPC分类号： F17D1/04 , C23C16/44 , C23C16/455 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45565
摘要： A gas supply apparatus, for use in a semiconductor device manufacturing process, provides a showerhead for evenly supplying various kinds of gases to a reaction chamber. The gas supplying apparatus for use in the formation of a thin film of a semiconductor device includes a first porous plate having a plurality of first holes formed throughout its surface, and a central bore formed at its center; and a second porous plate having first projections which are regularly formed throughout its central portion, and second projections which contain depressions continuously formed around the first projections. The gas supplying apparatus evenly distributes gas into the reaction chamber, thereby improving the uniformity of the film thickness to be grown on a substrate.
摘要翻译：用于半导体器件制造工艺的气体供应装置提供一种用于将各种气体均匀地供应到反应室的喷头。用于形成半导体器件的薄膜的气体供给装置包括：第一多孔板，其具有在其整个表面形成的多个第一孔;以及形成在其中心的中心孔; 以及第二多孔板，其具有在其中央部分规则地形成的第一突起，以及包含围绕第一突起连续形成的凹陷的第二突起。气体供给装置将气体均匀地分配到反应室中，从而提高在基板上生长的膜厚度的均匀性。

2. 发明申请

US20050014375A1 Method for cleaning substrate surface 有权
标题翻译：清洗基材表面的方法
公开(公告)号：US20050014375A1
公开(公告)日：2005-01-20
申请号：US10850261
申请日：2004-05-20
申请人： Jeong-Ho Kim , Gil-Gwang Lee
发明人： Jeong-Ho Kim , Gil-Gwang Lee
IPC分类号： B08B7/00 , H01L21/00 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02063 , B08B7/00 , H01L21/31116 , H01L21/67069 , H01L21/76814 , H01L21/76828 , H01L2221/1057 , Y10S438/906
摘要： There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 gas is used as a first processing gas. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching is removed in annealing step with H2 flow. The environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process repeatability is improved.
摘要翻译：提供了使用等离子体从硅衬底表面除去天然氧化物层，化学氧化物层和损坏部分以及来自金属表面的污染物的表面清洁装置和方法。使用H2和N2气体的混合物作为第一处理气体。通过吸收等离子体发生器和衬底之间的接地栅极或挡板中的电势，只有自由基被传递到衬底，而HF气体被用作第二处理气体。因此，在退火步骤中，通过H 2流除去蚀刻期间形成在硅衬底上的自然氧化物层，化学氧化物层或损坏部分。通过在每个晶片处理之后引入调节气体，使室的环境保持恒定。因此，改善了工艺重复性。

3. 发明授权

US07111629B2 Method for cleaning substrate surface 有权
标题翻译：清洗基材表面的方法
公开(公告)号：US07111629B2
公开(公告)日：2006-09-26
申请号：US10850261
申请日：2004-05-20
申请人： Jeong-Ho Kim , Gil-Gwang Lee
发明人： Jeong-Ho Kim , Gil-Gwang Lee
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , B08B7/00 , H01L21/31116 , H01L21/67069 , H01L21/76814 , H01L21/76828 , H01L2221/1057 , Y10S438/906
摘要： There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 gas is used as a first processing gas. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching is removed in annealing step with H2 flow. The environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process repeatability is improved.
摘要翻译：提供了一种使用等离子体从硅衬底表面除去自然氧化物层，化学氧化物层和损坏部分以及来自金属表面的污染物的表面清洁装置和方法。使用H 2 N 2和N 2 O 2气体的混合物作为第一处理气体。通过吸收等离子体发生器和衬底之间的接地栅极或挡板中的电势，只有自由基被传递到衬底，而HF气体被用作第二处理气体。因此，在H 2 H 2流的退火步骤中除去蚀刻期间在硅衬底上形成的天然氧化物层，化学氧化物层或损坏部分。通过在每个晶片处理之后引入调节气体，使室的环境保持恒定。因此，改善了工艺重复性。

4. 发明申请

US20060157079A1 Method for cleaning substrate surface 审中-公开
公开(公告)号：US20060157079A1
公开(公告)日：2006-07-20
申请号：US11385391
申请日：2006-03-21
申请人： Jeong-Ho Kim , Gil-Gwang Lee
发明人： Jeong-Ho Kim , Gil-Gwang Lee
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , B08B7/00 , H01L21/31116 , H01L21/67069 , H01L21/76814 , H01L21/76828 , H01L2221/1057 , Y10S438/906
摘要： There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2 and N2 gas is used as a first processing gas. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching is removed in annealing step with H2 flow. The environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process repeatability is improved.

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