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US06537876B2 Method of manufacturing a semiconductor capacitor having a hemispherical grain layer using a dry cleaning process 失效
标题翻译：使用干洗方法制造具有半球形晶粒层的半导体电容器的方法
公开(公告)号：US06537876B2
公开(公告)日：2003-03-25
申请号：US09799033
申请日：2001-03-06
申请人： Seung-pil Chung , Kyu-hwan Chang , Young-min Kwon , Sang-lock Hah
发明人： Seung-pil Chung , Kyu-hwan Chang , Young-min Kwon , Sang-lock Hah
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L21/02046 , Y10S438/906 , Y10S438/964
摘要： A method of manufacturing a semiconductor device having a hemispherical grain (HSG) layer employs a dry cleaning process. A polysilicon layer is formed on a specific material layer on a semiconductor substrate. Next, a polysilicon pattern, at least a portion of which is exposed, is formed by etching the polysilicon layer. The exposed surface of the polysilicon pattern is then dry cleaned by supplying hydrogen in a plasma state and a fluorine-based gas toward the exposed surface. The exposed surface of the polysilicon pattern may also be wet cleaned before being dry cleaned to wash away pollutants which may have been left thereon. An HSG layer is then formed on the cleaned surface of the polysilicon pattern. After the HSG layer is formed, the surface of the HSG layer may be dry cleaned again by supplying hydrogen in a plasma state and a fluorine-based gas toward the surface of the HSG layer. The surface of the HSG layer may also be further wet cleaned before being dry cleaned. Accordingly, the HSG layer is effectively cleaned without damaging or contaminating the HSG layer, thereby improving the reliability of the semiconductor device.
摘要翻译：制造具有半球形颗粒（HSG）层的半导体器件的方法采用干法处理。在半导体衬底上的特定材料层上形成多晶硅层。接下来，通过蚀刻多晶硅层形成其至少一部分露出的多晶硅图案。然后通过以等离子体状态供给氢气和将氟基气体朝向暴露的表面进行干式清洗。多晶硅图案的暴露表面也可以在干燥清洁之前被湿清洗以洗去可能留在其上的污染物。然后在多晶硅图案的清洁表面上形成HSG层。在形成HSG层之后，可以通过以等离子体状态供给氢，并将氟基气体朝向HSG层的表面再次干燥HSG层的表面。 HSG层的表面也可以在干洗之前进一步湿清洗。因此，HSG层被有效地清洁而不损坏或污染HSG层，从而提高半导体器件的可靠性。

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