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1. 发明申请

US20100147799A1 CHEMICAL MECHANICAL POLISHING METHOD 有权
标题翻译：化学机械抛光方法
公开(公告)号：US20100147799A1
公开(公告)日：2010-06-17
申请号：US12711344
申请日：2010-02-24
申请人： Dong-Keun Kim , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
发明人： Dong-Keun Kim , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
IPC分类号： C23F1/00
CPC分类号： H01L21/76819 , C09G1/02 , H01L21/31053
摘要： In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed.
摘要翻译：在一个实施方案中，一种用于具有第一层和阶梯部分的基材的化学机械抛光方法。第一层的表面位于台阶部的上表面的上方。通过使用具有自停特性的第一浆料组合物在第一层上进行用于选择性去除台阶部分的抛光工艺，使得第一层变成具有基本平坦表面的第二层。使用不具有自停特性的第二浆料组合物进行第二抛光处理，直到阶梯部分的上表面露出。

2. 发明授权

US07709319B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07709319B2
公开(公告)日：2010-05-04
申请号：US11450269
申请日：2006-06-12
申请人： Yeol Jon , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
发明人： Yeol Jon , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10852
摘要： Provided is a semiconductor device including a vertically oriented capacitor extending above the substrate surface and a method of manufacturing such devices in which cell, peripheral and boundary areas between the cell and peripheral areas are defined on a semiconductor substrate. Capacitors are formed in the cell area, a mold pattern is provided in the peripheral areas and an elongated dummy pattern is provided in the boundary areas. The dummy pattern includes a boundary opening in which a thin layer is formed on the elongated inner sidewalls and on the exposed portion of the substrate during formation of the lower electrode. A mold pattern and lower electrode structures having substantially the same height are then formed area so that subsequent insulation interlayer(s) exhibit a generally planar surface, i.e., have no significant step difference between the cell areas and the peripheral areas.
摘要翻译：提供一种包括在基板表面上方延伸的垂直取向的电容器的半导体器件以及制造这样的器件的方法，其中在半导体衬底上限定了单元和外围区域之间的单元，外围和边界区域。电容器形成在电池区域中，在外围区域设置模具图案，并且在边界区域中设置细长的虚拟图案。虚拟图案包括边界开口，其中在形成下电极期间在细长的内侧壁上和在基板的暴露部分上形成薄层。然后形成具有基本上相同高度的模具图案和下部电极结构，使得随后的绝缘中间层呈现大致平坦的表面，即在电池区域和外围区域之间没有显着的步进差异。

3. 发明申请

US20100096681A1 Cell structure for a semiconductor memory device and method of fabricating the same 失效
标题翻译：半导体存储器件的单元结构及其制造方法
公开(公告)号：US20100096681A1
公开(公告)日：2010-04-22
申请号：US12654255
申请日：2009-12-15
申请人： Kyoung-Yun Baek , Yong-Sun Ko , Hak Kim , Yong-Kug Bae
发明人： Kyoung-Yun Baek , Yong-Sun Ko , Hak Kim , Yong-Kug Bae
IPC分类号： H01L27/108
CPC分类号： H01L27/0207 , H01L27/10888
摘要： In a 6F2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F2-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.
摘要翻译：在存储器件的6F2单元结构及其制造方法中，多个有源区可以在两端部具有第一区域，在中心部分可以具有第二区域。位线接触焊盘的一部分可以位于第二区域上，另一部分可以位于基板的不与多个有源区域重叠的第三区域上。位线可以与第三区域的位线接触焊盘连接。尽管6F2结构的单元电池，电池结构也可以更容易地形成。多个有源区域可以具有包括主轴和短轴的椭圆形状。多个有源区域可以被定位在长轴方向上，从而形成有源行，并且可以以这样的结构定位在短轴方向上，使得多个有源区域的中心与相邻的活动区域的中心相邻活动行中的区域。

4. 发明授权

US07579284B2 Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same 失效
标题翻译：蚀刻溶液，使用其形成图案的方法，使用该方法制造多栅极氧化物层的方法以及使用其制造闪存器件的方法
公开(公告)号：US07579284B2
公开(公告)日：2009-08-25
申请号：US11482773
申请日：2006-07-10
申请人： Byoung-Moon Yoon , Ji-Hong Kim , Yong-Sun Ko , Kyung-Hyun Kim
发明人： Byoung-Moon Yoon , Ji-Hong Kim , Yong-Sun Ko , Kyung-Hyun Kim
IPC分类号： H01L21/311
CPC分类号： C09K13/04 , H01L21/32134
摘要： Example embodiments of the present invention relate to an etching solution, a method of forming a pattern using the same, a method of manufacturing a multiple gate oxide layer using the same and a method of manufacturing a flash memory device using the same. Other example embodiments of the present invention relate to an etching solution having an etching selectivity between a polysilicon layer and an oxide layer, a method of forming a pattern using an etching solution using the same, a method of manufacturing a multiple gate oxide layer using the same, and a method of manufacturing a flash memory device using the same. An etching solution including hydrogen peroxide (H2O2) and ammonium hydroxide (NH4OH) by a volume ratio of about 1:2 to about 1:10 mixed in water. In a method of forming a pattern and methods of manufacturing a multiple gate oxide layer and a flash memory device, a polysilicon layer may be formed on a substrate. An insulation layer pattern including an opening exposing the polysilicon layer may be formed on the polysilicon layer. The polysilicon layer exposed by the insulation layer pattern may be etched using the etching solution. A polysilicon layer pattern may be formed on the substrate using the etching solution.
摘要翻译：本发明的示例性实施例涉及一种蚀刻溶液，使用该方法形成图案的方法，使用该蚀刻溶液的多栅极氧化物层的制造方法以及使用其制造闪存器件的方法。本发明的其它示例性实施例涉及在多晶硅层和氧化物层之间具有蚀刻选择性的蚀刻溶液，使用其使用蚀刻溶液形成图案的方法，使用该栅极氧化物层的方法以及使用其制造闪存器件的方法。包含在水中混合的体积比为约1:2至约1:10的过氧化氢（H 2 O 2）和氢氧化铵（NH 4 OH）的蚀刻溶液。在形成图案的方法和制造多栅极氧化物层和闪存器件的方法中，可以在衬底上形成多晶硅层。可以在多晶硅层上形成包括露出多晶硅层的开口的绝缘层图案。可以使用蚀刻溶液蚀刻由绝缘层图案暴露的多晶硅层。可以使用蚀刻溶液在衬底上形成多晶硅层图案。

5. 发明申请

US20090090899A1 Phase change memory device and method of manufacturing the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090090899A1
公开(公告)日：2009-04-09
申请号：US12285531
申请日：2008-10-08
申请人： Young-Soo Lim , Yong-Sun Ko , Sung-Un Kwon , Jae-Seung Hwang
发明人： Young-Soo Lim , Yong-Sun Ko , Sung-Un Kwon , Jae-Seung Hwang
IPC分类号： H01L45/00
CPC分类号： H01L45/12 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： A method of manufacturing a phase change memory device includes forming at least one active device on a substrate, forming a bottom electrode electrically connected to the at least one active device, forming a phase change material layer and a top electrode on the bottom electrode, forming a capping layer on an upper surface of the top electrode and on side surfaces of the top electrode and phase change material layer, removing a portion of the capping layer overlapping the upper surface of the top electrode to define capping layer sidewall portions, forming an interlayer insulation film on the capping layer sidewall portions and on the top electrode, removing a portion of the interlayer insulation film from the top electrode to form a contact hole through the interlayer insulation film, and forming a contact plug in the contact hole.
摘要翻译：一种制造相变存储器件的方法包括在衬底上形成至少一个有源器件，形成与该至少一个有源器件电连接的底部电极，在底部电极上形成相变材料层和顶部电极，形成在顶部电极的上表面上以及顶部电极和相变材料层的侧表面上的覆盖层，去除与顶部电极的上表面重叠的覆盖层的一部分以限定覆盖层侧壁部分，形成中间层绝缘膜在顶盖电极上，从上电极去除一部分层间绝缘膜，以形成穿过层间绝缘膜的接触孔，并在接触孔中形成接触塞。

6. 发明授权

US07498253B2 Local interconnection method and structure for use in semiconductor device 失效
标题翻译：用于半导体器件的局部互连方法和结构
公开(公告)号：US07498253B2
公开(公告)日：2009-03-03
申请号：US11679722
申请日：2007-02-27
申请人： Sung-Un Kwon , Yong-Sun Ko
发明人： Sung-Un Kwon , Yong-Sun Ko
IPC分类号： H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76807 , H01L21/76808 , H01L21/76895
摘要： A local interconnection wiring structure method for forming the same reduces the likelihood of a short between a local interconnection layer of gate electrodes and an active region by forming a common aperture so as to have a determined aperture between the local interconnection layer and the active region on an insulation film of a semiconductor substrate. Methods of forming the local interconnection wire can include forming a first etching mask pattern that has a size longer than a length between inner ends of adjacent gate electrodes formed on a semiconductor substrate and covered with an insulation film. The etching mask simultaneously has a length the same as or shorter than the length between outer ends of the gate electrodes. The insulation film exposed in the first etching mask pattern is subsequently etched so that the insulation film remains higher than a highest height of the gate electrodes, so as to form a recess pattern. The first etching mask pattern is then removed and a second etching mask pattern is formed so as to partially expose the insulation film provided within the recess pattern. The insulation film within the recess pattern is etched to form apertures for exposing a partial surface of the gate electrodes. The second etching mask pattern is then removed. The recess pattern and the apertures are then filled with conductive material to form a local interconnection layer for connecting between the gate electrodes.
摘要翻译：用于形成其的局部互连配线结构方法通过形成公共孔径来减小栅电极的局部互连层与有源区之间的短路的可能性，以便在局部互连层和有源区之间具有确定的孔径半导体衬底的绝缘膜。形成局部互连线的方法可以包括形成第一蚀刻掩模图案，其具有比形成在半导体衬底上并被绝缘膜覆盖的相邻栅电极的内端之间的长度的长度。蚀刻掩模同时具有与栅电极的外端之间的长度相同或更短的长度。随后蚀刻在第一蚀刻掩模图案中暴露的绝缘膜，使得绝缘膜保持高于栅电极的最高高度，以形成凹陷图案。然后去除第一蚀刻掩模图案，并且形成第二蚀刻掩模图案，以便部分地暴露设置在凹槽图案内的绝缘膜。蚀刻凹槽图形内的绝缘膜以形成用于暴露栅电极的局部表面的孔。然后去除第二蚀刻掩模图案。然后用导电材料填充凹槽图案和孔，以形成用于连接栅电极的局部互连层。

7. 发明申请

US20080042240A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080042240A1
公开(公告)日：2008-02-21
申请号：US11976251
申请日：2007-10-23
申请人： Yeol Jon , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
发明人： Yeol Jon , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
IPC分类号： H01L29/00
CPC分类号： H01L27/10894 , H01L27/10852
摘要： Provided is a semiconductor device including a vertically oriented capacitor extending above the substrate surface and a method of manufacturing such devices in which cell, peripheral and boundary areas between the cell and peripheral areas are defined on a semiconductor substrate. Capacitors are formed in the cell area, a mold pattern is provided in the peripheral areas and an elongated dummy pattern is provided in the boundary areas. The dummy pattern includes a boundary opening in which a thin layer is formed on the elongated inner sidewalls and on the exposed portion of the substrate during formation of the lower electrode. A mold pattern and lower electrode structures having substantially the same height are then formed area so that subsequent insulation interlayer(s) exhibit a generally planar surface, i.e., have no significant step difference between the cell areas and the peripheral areas.
摘要翻译：提供一种包括在基板表面上方延伸的垂直取向的电容器的半导体器件以及制造这样的器件的方法，其中在半导体衬底上限定了单元和外围区域之间的单元，外围和边界区域。电容器形成在电池区域中，在外围区域设置模具图案，并且在边界区域中设置细长的虚拟图案。虚拟图案包括边界开口，其中在形成下电极期间在细长的内侧壁上和在基板的暴露部分上形成薄层。然后形成具有基本上相同高度的模具图案和下部电极结构，使得随后的绝缘中间层呈现大致平坦的表面，即在电池区域和外围区域之间没有显着的步进差异。

8. 发明申请

US20060287208A1 Methods of Forming Corrosion-Inhibiting Cleaning Compositions for Metal Layers and Patterns on Semiconductor Substrates 审中-公开
标题翻译：在半导体基板上形成金属层和图案的腐蚀抑制清洁组合物的方法
公开(公告)号：US20060287208A1
公开(公告)日：2006-12-21
申请号：US11467736
申请日：2006-08-28
申请人： Kwang-Wook Lee , In-Seak Hwang , Keum-Joo Lee , Chang-Lyong Song , Yong-Sun Ko , Kui-Jong Baek , Woong Han
发明人： Kwang-Wook Lee , In-Seak Hwang , Keum-Joo Lee , Chang-Lyong Song , Yong-Sun Ko , Kui-Jong Baek , Woong Han
IPC分类号： C11D7/32
CPC分类号： H01L21/02071 , C11D3/0084 , C11D7/3281 , C11D11/0047 , C23G1/106
摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.
摘要翻译：用于半导体晶片处理的腐蚀抑制清洁组合物包括浓度在约0.5重量％至约5重量％范围内的浓度在约1重量％至约10重量％范围内的硫酸，氢气浓度在约0.01重量％至约1重量％范围内的氟化物; 浓度在约0.1重量％至约5重量％范围内的唑类和去离子水。在清洁过程中，唑类用于通过与金属层的表面螯合来抑制被清洁的金属层的腐蚀。

9. 发明授权

US07151043B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07151043B2
公开(公告)日：2006-12-19
申请号：US11082616
申请日：2005-03-17
申请人： Tae-hyun Kim , Byoung-moon Yoon , Won-jun Lee , Yong-sun Ko , Kyung-hyun Kim
发明人： Tae-hyun Kim , Byoung-moon Yoon , Won-jun Lee , Yong-sun Ko , Kyung-hyun Kim
IPC分类号： H01L21/76
CPC分类号： H01L27/11521 , H01L21/76224 , H01L27/115
摘要： Methods of manufacturing a semiconductor device are provided. A trench is formed in a semiconductor substrate. A first field oxide layer is formed that partially fills the trench. The first field oxide layer defines an active region of the substrate that is adjacent to the trench. An upper portion of sidewalls of the trench extends upward beyond a surface of the first field oxide layer. A first liner is formed on the first field oxide layer and on the portion of the sidewalls of the trench that extend upward beyond the first field oxide layer. A second field oxide layer is formed on the first liner and fills the trench. The second field oxide layer and the first liner are each partially removed to expose a top adjacent surface and upper sidewalls of the trench along the active region of the substrate. A dielectric layer is formed on the exposed top adjacent surface and upper sidewalls of the trench. A gate electrode is formed on the dielectric layer.
摘要翻译：提供制造半导体器件的方法。在半导体衬底中形成沟槽。形成部分填充沟槽的第一场氧化物层。第一场氧化物层限定与沟槽相邻的衬底的有源区。沟槽的侧壁的上部向上延伸超过第一场氧化物层的表面。第一衬垫形成在第一场氧化物层上并且在沟槽的侧壁的部分上方向上延伸超过第一场氧化物层。在第一衬垫上形成第二场氧化物层并填充沟槽。每个部分去除第二场氧化物层和第一衬里以沿着衬底的有源区域暴露沟槽的顶部相邻表面和上侧壁。介电层形成在沟槽的暴露的顶部相邻表面和上侧壁上。在电介质层上形成栅电极。

10. 发明授权

US07091117B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07091117B2
公开(公告)日：2006-08-15
申请号：US10836694
申请日：2004-04-30
申请人： Jae-Woo Kim , Yong-Sun Ko , Sang-Sup Jeong
发明人： Jae-Woo Kim , Yong-Sun Ko , Sang-Sup Jeong
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/66553 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L21/76838 , H01L21/823437 , H01L27/10873
摘要： A method of fabricating a semiconductor device including sequentially forming a polysilicon layer, a first insulating layer, and a photoresist layer over a gate oxide film positioned on a semiconductor substrate. A photoresist pattern with a first groove is formed by selectively patterning the photoresist layer to partially expose a surface of the first insulating layer. A second insulating layer is formed over the photoresist pattern with the first groove and over the exposed surface of the first insulating layer. A sacrificial spacer is formed on each inner wall of the first groove by etching back the second insulating layer and forming a second groove in the first insulating layer in communication with the first groove to expose a surface of the polysilicon layer at the bottom of the second groove. The photoresist pattern is removed, and an arbitrary layer pattern is formed over the polysilicon layer at the bottom of the second groove. The sacrificial spacers and first insulating layer are removed, and a gate electrode is formed by etching the polysilicon layer using the arbitrary layer pattern as a mask.
摘要翻译：一种制造半导体器件的方法，包括在位于半导体衬底上的栅极氧化膜上顺序地形成多晶硅层，第一绝缘层和光致抗蚀剂层。通过选择性地图案化光致抗蚀剂层以部分地暴露第一绝缘层的表面来形成具有第一凹槽的光刻胶图案。在光致抗蚀剂图案上形成有第一绝缘层和第一绝缘层的暴露表面上的第一绝缘层。通过蚀刻第二绝缘层并在与第一凹槽连通的第一绝缘层中形成第二凹槽，在第二凹槽的每个内壁上形成牺牲隔离物，以暴露第二凹槽底部的多晶硅层的表面槽。去除光致抗蚀剂图案，并且在第二凹槽底部的多晶硅层上形成任意层图案。去除牺牲间隔物和第一绝缘层，并且通过使用任意层图案作为掩模蚀刻多晶硅层来形成栅电极。

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