专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06715497B2 Treatment to eliminate polysilicon defects induced by metallic contaminants 失效
标题翻译：处理以消除由金属污染物引起的多晶硅缺陷
公开(公告)号：US06715497B2
公开(公告)日：2004-04-06
申请号：US09753283
申请日：2001-01-02
申请人： Brian P. Conchieri , David D. Dussault , Mousa H. Ishaq
发明人： Brian P. Conchieri , David D. Dussault , Mousa H. Ishaq
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B7/00 , B08B7/0071 , H01L21/3221
摘要： A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminants on the surface thereof to an elevated temperature within an integrated closed system while simultaneously purging the integrated closed system with a chlorine-containing gas. At the elevated temperatures the chlorine dissociates from the chlorine-containing gas and reacts with the contaminants on the substrate surface to form volatile chloride byproducts with such contaminants which are removed from the integrated closed system while the substrate is continuously heated and purged with the chlorine-containing gas. Subsequently, the substrate is moved to a cooling chamber within the integrated closed system and cooled to provide a semiconductor substrate having a clean surface.
摘要翻译：提供了一种方法和装置，用于通过将可能在其表面上具有污染物的半导体衬底加热到集成封闭系统内的升高温度，同时清洗半导体衬底的表面上来消除污染物，包括金属和/或含烃污染物综合封闭系统含有含氯气体。在升高的温度下，氯从含氯气体中解离并与衬底表面上的污染物反应，形成具有这种污染物的挥发性氯化物副产物，其从基本上封闭的系统中除去，同时衬底被连续加热并用氯 - 含气。随后，将衬底移动到集成闭合系统内的冷却室，并冷却以提供具有干净表面的半导体衬底。

2. 发明授权

US06564811B2 Method of reducing residue deposition onto ash chamber base surfaces 失效
标题翻译：减少残留物沉积在灰室底面上的方法
公开(公告)号：US06564811B2
公开(公告)日：2003-05-20
申请号：US09818177
申请日：2001-03-26
申请人： Onofio L. Timperio , Stephen J. Luca
发明人： Onofio L. Timperio , Stephen J. Luca
IPC分类号： B08B600
CPC分类号： H01L21/67207 , H01J2237/022 , H01J2237/3342 , H01L21/67069
摘要： A semiconductor manufacturing a method and an apparatus is described. That apparatus includes an ash chamber that has an ash chamber base, and a heating unit that is coupled to the ash chamber base. The heating unit applies heat to the ash chamber base to reduce deposition of residues onto ash chamber base surfaces, which could cause surface particle defects in a semiconductor device.
摘要翻译：对半导体制造方法和装置进行说明。该装置包括具有灰室基座的灰室和连接到灰室基座的加热单元。加热单元将热量施加到灰室基底以减少残余物沉积到灰室基底表面上，这可能导致半导体器件中的表面颗粒缺陷。

3. 发明授权

US06435196B1 Impurity processing apparatus and method for cleaning impurity processing apparatus 失效
标题翻译：杂质处理装置和清洗杂质处理装置的方法
公开(公告)号：US06435196B1
公开(公告)日：2002-08-20
申请号：US09451706
申请日：1999-12-01
申请人： Noritada Satoh , Kouichi Ohira , Bunya Matsui , Kazuo Maeda
发明人： Noritada Satoh , Kouichi Ohira , Bunya Matsui , Kazuo Maeda
IPC分类号： B08B600
CPC分类号： H01L21/67028
摘要： The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, boron, or the like are doped in a semiconductor substrate, etc., or a PSG (PhosphoSilicateGlass) film, a BSG (BoroSilicateGlass) film, or a BPSG (BoroPhosphoSilicateGlass) film, or a carbon film, etc. This apparatus includes a chamber having an introduction port for an impurity-containing ion gas which is connected to an impurity-containing gas supply section, a substrate holder supporting a substrate which is to be ion-injected, or doped, or on which a film is formed using the impurity-containing gas, an introduction port of a water-containing gas which is provided upstream of the substrate holder in accordance with a flow direction of the impurity-containing gas, and is connected to a water-containing gas supply section, and first plasma generating means in a space extending from the introduction port for water-containing gas to the substrate holder for converting water-containing gas to a plasma.
摘要翻译：本发明涉及在半导体衬底等中掺杂诸如磷，硼等杂质的杂质处理装置，或PSG（磷酸硅酸盐玻璃）膜，BSG（硼硅酸盐玻璃）膜或BPSG（ BoroPhospho硅酸盐玻璃）膜或碳膜等。该装置包括具有与含杂质气体供给部连接的含杂质离子气体导入口的室，支撑待离子化的基板的基板保持架注入或掺杂，或者使用含杂质的气体形成膜，根据含杂质气体的流动方向设置在衬底保持器的上游的含水气体的引入口，并且连接到含水气体供给部，并且在从含水气体的导入口延伸到用于转换含水气体的基板保持器的空间中的第一等离子体产生装置 g气体到等离子体。

4. 发明授权

US06347636B1 Methods and apparatus for gettering fluorine from chamber material surfaces 有权
标题翻译：从室材料表面吸除氟的方法和设备
公开(公告)号：US06347636B1
公开(公告)日：2002-02-19
申请号：US09340602
申请日：1999-06-25
申请人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
发明人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
IPC分类号： B08B600
CPC分类号： B08B7/0035 , C23C16/4405 , H01L21/67017 , Y10S438/905
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

5. 发明授权

US06256825B1 Removal of particulate contamination in loadlocks 有权
标题翻译：去除负荷锁中的颗粒物污染
公开(公告)号：US06256825B1
公开(公告)日：2001-07-10
申请号：US09196752
申请日：1998-11-20
申请人： Yuan-Ko Hwang
发明人： Yuan-Ko Hwang
IPC分类号： B08B600
CPC分类号： H01L21/67028 , B08B6/00 , Y10S134/902 , Y10S438/906
摘要： The invention teaches the removal of dust particles during semiconductor processing without the need to modify the processing chambers or to wait until they are not being used for their normal purposes. The dust removal operation is performed inside loadlocks instead the processing chambers. Dust removal, in a loadlock, is accomplished by first initiating a flow of gas over the wafer surface. Then a negative charge is induced at the surface for a period of time followed by the induction of a positive charge. This causes the charged particles to be repelled away from the surface, at which point they are swept away by the gas. To remove the electrically neutral dust particles, the induced surface charge is switched too rapidly for these particles to follow, so they are briefly repelled from the surface and then swept away by the gas.
摘要翻译：本发明教导了在半导体加工期间除去灰尘颗粒，而不需要修改处理室或等待直到它们不被用于其正常目的。除尘操作是在装载锁中代替处理室进行的。在装载锁中的除尘是通过首先在晶片表面上引发气流来实现的。然后在表面诱发负电荷一段时间，然后诱导正电荷。这导致带电粒子从表面排出，在这点被气体扫除。为了去除电中性灰尘颗粒，诱导的表面电荷对于这些颗粒的转换过快，因此它们被短暂地从表面排斥，然后被气体扫除。

6. 发明授权

US06230719B1 Apparatus for removing contaminants on electronic devices 失效
标题翻译：用于去除电子设备上污染物的设备
公开(公告)号：US06230719B1
公开(公告)日：2001-05-15
申请号：US09032119
申请日：1998-02-27
申请人： Richard W. Wensel
发明人： Richard W. Wensel
IPC分类号： B08B600
CPC分类号： B08B3/041 , B08B7/0035 , H01L2224/0381 , H01L2224/32245 , H01L2224/48247 , H01L2224/8501 , H01L2224/85013 , H01L2224/92247 , H01L2924/01078 , H01L2924/01322 , Y10T29/41
摘要： The invention provides a unique method and apparatus for removing flash or other contaminants from an electronic package such as encapsulated semiconductor device by exposing the device to plasma gas. In a preferred embodiment, a plasma gas cleaner is provided with a reaction chamber used to house the encapsulated device during a deflashing procedure. Plasma gas is supplied to the reaction chamber for reaction on the surfaces of the device. The reaction of the plasma on these surfaces successfully removes excess encasing material and other contaminants. The plasma gas cleaner may be a plasma gas device used for other process steps (e.g., plasma etching) employed during the fabrication and manufacture of the semi conductor device.
摘要翻译：本发明提供了一种独特的方法和装置，用于通过将该装置暴露于等离子体气体来从诸如封装的半导体器件的电子封装中去除闪光或其它污染物。在优选实施例中，等离子体气体清洁器设置有用于在消融过程期间容纳封装装置的反应室。将等离子体气体供应到反应室以在装置的表面上进行反应。这些表面上的等离子体的反应成功地去除了多余的包裹材料和其它污染物。等离子体气体清洁器可以是用于在半导体器件的制造和制造期间使用的其它工艺步骤（例如，等离子体蚀刻）的等离子体气体装置。

7. 发明授权

US06776170B2 Method and apparatus for plasma cleaning of workpieces 有权
标题翻译：用于等离子体清洁工件的方法和装置
公开(公告)号：US06776170B2
公开(公告)日：2004-08-17
申请号：US10279928
申请日：2002-10-25
申请人： Lianjun Liu
发明人： Lianjun Liu
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B7/00 , C23C14/022 , C23C16/0245 , H01J37/321 , H01J37/32733 , H01L21/67028 , H01L21/67069
摘要： A method and apparatus for plasma cleaning a workpiece (W) in a plasma-cleaning chamber (20) having an interior region (30). The method comprises the steps of first, loading the workpiece into the plasma cleaning chamber interior region. The next step is pumping down the plasma cleaning chamber interior region down to a pre-determined pressure, with hydrogen as the ambient gas. The next step is forming from the hydrogen gas a plasma (36) having an ion density in the range between 1010 and 1013 cm−3 and an ion energy lower than 30 eV The last step is exposing the workpiece to the plasma for a predetermined time. The apparatus of the present invention preferably includes first and second vacuum processing chambers (20 and 120), wherein the first chamber performs the plasma cleaning of the workpiece according to the method of the invention, and the second chamber performs an additional process step, e.g., depositing a metal.
摘要翻译：一种用于等离子体清洁具有内部区域（30）的等离子体清洁室（20）中的工件（W）的方法和装置。该方法包括以下步骤：首先将工件装载到等离子体清洁室内部区域中。下一步骤是将氢气作为环境气体，将等离子体清洗室内部区域下降到预定的压力。下一步骤是从氢气形成离子密度在10 10和10 13 cm -3之间且离子能低于30eV的等离子体（36）。最后一步是将工件到等离子体预定的时间。本发明的装置优选地包括第一和第二真空处理室（20和120），其中第一室根据本发明的方法执行工件的等离子体清洁，并且第二室执行附加的处理步骤，例如，沉积金属。

8. 发明授权

US06635144B2 Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment 失效
公开(公告)号：US06635144B2
公开(公告)日：2003-10-21
申请号：US09833437
申请日：2001-04-11
申请人： Zhenjiang Cui , Padmanabhan Krishnaraj , Shamouil Shamouilian
发明人： Zhenjiang Cui , Padmanabhan Krishnaraj , Shamouil Shamouilian
IPC分类号： B08B600
CPC分类号： H01L21/67253 , B08B7/00 , C23C16/4405 , H01L21/67069 , H01L21/67248
摘要： Apparatus for processing semiconductor wafers includes a processing chamber, a chuck within the chamber for supporting a wafer during processing, a fiberoptic cable having a first end positioned at the surface of the chuck, and an optical pyrometer connected to a second end of the cable. The optical pyrometer measures the temperature of a wafer during processing and measures in situ temperature of plasma-excited cleaning gas introduced into the chamber during subsequent cleaning from walls thereof of unwanted solid deposits within the chamber. The pyrometer is connected to a computer which controls the flow of cleaning gases. When the temperature of the plasma-excited gas reaches a steady-state value the computer stops the flow of cleaning gases into the chamber and thereby stops the cleaning operation.

9. 发明授权

US06467490B1 Process for using a high nitrogen concentration plasma for fluorine removal from a reactor 有权
标题翻译：使用高氮浓度等离子体从反应器中除去氟的方法
公开(公告)号：US06467490B1
公开(公告)日：2002-10-22
申请号：US09382917
申请日：1999-08-25
申请人： Hidenori Kawata , Asad Haider
发明人： Hidenori Kawata , Asad Haider
IPC分类号： B08B600
CPC分类号： H01J37/32862 , C23C16/4405
摘要： A process of removing fluorine from a chemical deposition reactor includes the step of injecting a gaseous mixture of nitrogen and hydrogen into the reactor, the volume ratio of nitrogen to hydrogen in the gaseous mixture being in the range of from 1:1 to 6:1. More preferably the N2/H2 ratio is in the range of 2.5 to 4.5:1. The gaseous mixture is ionized with a RF induced energy discharge, with a RF power setting typically in the range of from 200 to 250 watts at an RF frequency of 13.5 MHZ. The gaseous mixture is injected into the reactor for a predetermined period of time based upon the thickness of a material, typically a metal such as tungsten, deposited upon a wafer in the reactor during a semiconductor fabrication process.
摘要翻译：从化学沉积反应器除去氟的方法包括将氮气和氢气的气态混合物注入反应器的步骤，气体混合物中氮与氢的体积比在1:1至6:1的范围内。更优选地，N 2 / H 2比在2.5至4.5:1的范围内。气体混合物用RF感应能量放电电离，RF功率设置通常在13.5MHz的RF频率范围内为200-250瓦特。基于在半导体制造过程中沉积在反应器中的晶片上的材料（通常为诸如钨的金属）的厚度，将气态混合物注入反应器预定的时间段。

10. 发明授权

US06443165B1 Method for cleaning plasma treatment device and plasma treatment system 有权
标题翻译：等离子体处理装置和等离子体处理系统的清洗方法
公开(公告)号：US06443165B1
公开(公告)日：2002-09-03
申请号：US09101554
申请日：1998-09-21
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Shuichi Ishizuka , Masahide Saito , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Shuichi Ishizuka , Masahide Saito , Tadashi Hirata
IPC分类号： B08B600
CPC分类号： C23C16/4405
摘要： A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.
摘要翻译：一种用于等离子体处理系统的方法，其缩短了在真空容器中固化的含氟碳膜的清洁所需的时间，并且在进行清洁时保护转印台的表面。在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成散射的CO 2。另一方面，F分散为F2。因此，去除CF膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式