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1. 发明授权

US06303480B1 Silicon layer to improve plug filling by CVD 失效
标题翻译：硅层通过CVD改善塞子填充
公开(公告)号：US06303480B1
公开(公告)日：2001-10-16
申请号：US09395040
申请日：1999-09-13
申请人： Sandeep A. Desai , Scott Brad Herner , Steve G. Ghanayem
发明人： Sandeep A. Desai , Scott Brad Herner , Steve G. Ghanayem
IPC分类号： H01L2120
CPC分类号： H01L21/76855 , H01L21/76843 , H01L21/76862 , H01L21/76876 , H01L21/76877
摘要： A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. A layer of silicon is deposited on the walls of an opening. In one aspect, the opening is filled by depositing electrically conductive material directly over the silicon. In another aspect, the layer of silicon is exposed to a precursor gas that reacts with the silicon so as to (a) form a volatile material that consumes substantially all of the silicon and (b) deposit an electrically conductive material within the opening.
摘要翻译：一种在衬底的电介质层的开口中形成导电插塞的方法。一层硅沉积在开口的壁上。在一个方面，通过在硅上直接沉积导电材料来填充开口。在另一方面，硅层暴露于与硅反应的前体气体，以便（a）形成消耗基本上所有硅的挥发性材料，和（b）在开口内沉积导电材料。

2. 发明授权

US06602770B2 Silicon layer to improve plug filling by CVD 失效
公开(公告)号：US06602770B2
公开(公告)日：2003-08-05
申请号：US09981671
申请日：2001-10-16
申请人： Sandeep A. Desai , Scott Brad Herner , Steve G. Ghanayem
发明人： Sandeep A. Desai , Scott Brad Herner , Steve G. Ghanayem
IPC分类号： H01L2120
CPC分类号： H01L21/76855 , H01L21/76843 , H01L21/76862 , H01L21/76876 , H01L21/76877
摘要： A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.

3. 发明申请

US20080210258A1 SCRUBBER BOX AND METHODS FOR USING THE SAME 有权
标题翻译： SCRUBBER BOX及其使用方法
公开(公告)号：US20080210258A1
公开(公告)日：2008-09-04
申请号：US12102846
申请日：2008-04-14
申请人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
发明人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
IPC分类号： B08B7/00 , A47L25/00
CPC分类号： H01L21/67046 , B08B1/04
摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要翻译：提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度刷子

4. 发明授权

US06319766B1 Method of tantalum nitride deposition by tantalum oxide densification 失效
标题翻译：通过氧化钽致密化的氮化钽CVD沉积方法
公开(公告)号：US06319766B1
公开(公告)日：2001-11-20
申请号：US09510582
申请日：2000-02-22
申请人： Mouloud Bakli , Steve G. Ghanayem , Huyen T. Tran
发明人： Mouloud Bakli , Steve G. Ghanayem , Huyen T. Tran
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , C23C16/0281 , C23C16/405 , C23C16/56 , H01L21/31604 , H01L21/318 , H01L29/66181
摘要： The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and anunonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to form a metal/metal nitride liner/barrier scheme. The invention firer provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.
摘要翻译：本发明提供一种通过在基板上沉积金属氧化物膜并将金属氧化物膜暴露于硝化气体以致使金属氧化物致密并形成金属氮化物膜的方法来形成金属氮化物膜。通过化学气相沉积前体的分解沉积金属氧化物膜。硝化步骤包括将金属氧化物膜暴露于热或等离子体增强的硝化气体中，优选包括氮气，氧气和氧气。本发明还提供了一种用于通过用沉积金属衬垫层的硝化气体致密化金属氧化物层而在衬底上形成金属氮化物层来形成用于金属化堆叠的衬里/势垒方案的方法。可选地，金属衬垫层可以在金属氮化物层之前沉积在衬底上以形成金属/金属氮化物衬垫/屏障方案。本发明的火焰提供了形成微电子器件的方法，包括形成第一电极，通过用硝化气体致密化金属氧化物层，在第一电极上形成金属氮化物层，形成金属氮化物层，在金属上沉积介电层氮化物层，并且在电介质层上形成第二电极。或者，金属氮化物膜可以包括第一和第二电极。

5. 发明授权

US6162715A Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride 失效
标题翻译：通过钨和氮化钨的原位化学气相沉积形成栅电极连接结构的方法
公开(公告)号：US6162715A
公开(公告)日：2000-12-19
申请号：US114839
申请日：1998-07-14
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
IPC分类号： C23C16/02 , C23C16/14 , C23C16/34 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/49 , H01L21/3205
CPC分类号： H01L29/66583 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/76843 , H01L29/4941
摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.
摘要翻译：通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。在沉积之前，用氢等离子体预处理晶片以提高粘附性。钨沉积工艺可以使用六氟化钨和氢气进行CVD。包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

6. 发明授权

US6106634A Methods and apparatus for reducing particle contamination during wafer transport 有权
标题翻译：减少晶片运输过程中颗粒污染的方法和装置
公开(公告)号：US6106634A
公开(公告)日：2000-08-22
申请号：US249538
申请日：1999-02-11
申请人： Steve G. Ghanayem , Madhavi Chandrachood
发明人： Steve G. Ghanayem , Madhavi Chandrachood
IPC分类号： B08B17/02 , C23C16/44 , H01L21/00 , B08B7/04
CPC分类号： H01L21/67167 , B08B17/02 , C23C16/4401 , H01L21/67109 , H01L21/67184 , H01L21/67248
摘要： The present invention provides methods and apparatus for reducing particulate contamination during the processing of a substrate. In one embodiment, the method includes the step of preheating a substrate in a preheater to a desired temperature. The preheated substrate is transferred from the preheater to a buffer region having a pressure therein that is between about two (2) Torr and about seven hundred and sixty (760) Torr. The preheated substrate is transferred from the buffer region to a reaction chamber. Thermophoretic forces help repel particles away from the substrate surface during substrate transfer.
摘要翻译：本发明提供了在衬底加工期间减少微粒污染的方法和装置。在一个实施例中，该方法包括将预热器中的衬底预热到所需温度的步骤。预热的基底从预热器转移到其中压力在约二（2）乇和约七百六十六毫乇之间的缓冲区。预热的基底从缓冲区转移到反应室。在底物转移过程中，热ic力有助于将颗粒从衬底表面排除。

7. 发明授权

US07377002B2 Scrubber box 有权
标题翻译：洗衣盒
公开(公告)号：US07377002B2
公开(公告)日：2008-05-27
申请号：US10976012
申请日：2004-10-28
申请人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
发明人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
IPC分类号： B08B1/04
CPC分类号： H01L21/67046 , B08B1/04
摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要翻译：提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度刷子

8. 发明申请

US20070259111A1 METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM 审中-公开
标题翻译：用于电子薄膜原子层沉积的化学品的激光的方法和装置
公开(公告)号：US20070259111A1
公开(公告)日：2007-11-08
申请号：US11464121
申请日：2006-08-11
申请人： Kaushal K. Singh , Maitreyee Mahajani , Steve G. Ghanayem , Joseph Yudovsky , Brendan McDougall
发明人： Kaushal K. Singh , Maitreyee Mahajani , Steve G. Ghanayem , Joseph Yudovsky , Brendan McDougall
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/34 , C23C16/403 , C23C16/405 , C23C16/4405 , C23C16/45504 , C23C16/45508 , C23C16/45574 , C23C16/45591 , C23C16/4583 , C23C16/46 , C23C16/482 , C23C16/509
摘要： The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.
摘要翻译：本发明通常提供一种用于沉积材料的方法，更具体地说，本发明的实施方案涉及利用光激发技术沉积阻挡层，种子层，导电材料和电介质材料的化学气相沉积方法和原子层沉积方法。本发明的实施方案通常提供了辅助方法和装置的方法，其中可以进行辅助过程以提供均匀沉积的材料。

9. 发明授权

US5777245A Particle dispersing system and method for testing semiconductor manufacturing equipment 失效
标题翻译：粒子分散系统及半导体制造设备的测试方法
公开(公告)号：US5777245A
公开(公告)日：1998-07-07
申请号：US710216
申请日：1996-09-13
申请人： Madhavi Chandrachood , Steve G. Ghanayem , Nancy Cantwell , Daniel J. Rader , Anthony S. Geller
发明人： Madhavi Chandrachood , Steve G. Ghanayem , Nancy Cantwell , Daniel J. Rader , Anthony S. Geller
IPC分类号： G01N15/02 , G01N19/00
CPC分类号： G01N15/02
摘要： The system and method prepare a gas stream comprising particles at a known concentration using a particle disperser for moving particles from a reservoir of particles into a stream of flowing carrier gas. The electrostatic charges on the particles entrained in the carrier gas are then neutralized or otherwise altered, and the resulting particle-laden gas stream is then diluted to provide an acceptable particle concentration. The diluted gas stream is then split into a calibration stream and the desired output stream. The particles in the calibration stream are detected to provide an indication of the actual size distribution and concentration of particles in the output stream that is supplied to a process chamber being analyzed. Particles flowing out of the process chamber within a vacuum pumping system are detected, and the output particle size distribution and concentration are compared with the particle size distribution and concentration of the calibration stream in order to determine the particle transport characteristics of a process chamber, or to determine the number of particles lodged in the process chamber as a function of manufacturing process parameters such as pressure, flowrate, temperature, process chamber geometry, particle size, particle charge, and gas composition.
摘要翻译：该系统和方法使用用于将颗粒从颗粒储存器移动到流动的载气流中的颗粒分散器来制备包含已知浓度的颗粒的气流。然后，夹带在载气中的颗粒上的静电电荷被中和或以其它方式改变，然后稀释所得到的载有颗粒的气流以提供可接受的颗粒浓度。然后将稀释的气流分成校准流和所需的输出流。检测校准流中的颗粒，以提供供应到正在分析的处理室的输出流中颗粒的实际尺寸分布和浓度的指示。检测在真空泵送系统内从处理室流出的颗粒，并将输出粒度分布和浓度与校准流的粒度分布和浓度进行比较，以确定处理室的颗粒传输特性，或以确定作为制造工艺参数如压力，流速，温度，处理室几何形状，粒度，颗粒电荷和气体组成的函数的处理室中的颗粒数。

10. 发明申请

US20140120723A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 有权
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：US20140120723A1
公开(公告)日：2014-05-01
申请号：US14062804
申请日：2013-10-24
申请人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

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