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1. 发明申请

US20110151119A1 Methods and Systems of Transferring, Docking and Processing Substrates 有权
标题翻译：转移，对接和处理基板的方法和系统
公开(公告)号：US20110151119A1
公开(公告)日：2011-06-23
申请号：US13038309
申请日：2011-03-01
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L21/673 , C23C16/44 , C23C16/458 , C23C16/56
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67706 , H01L21/67712 , H01L21/67727 , H01L21/67736 , H01L21/67748 , Y10S414/135
摘要： In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.
摘要翻译：根据本文描述的一些实施例，提供了一种用于将衬底转移到两个或更多个工艺模块的方法，包括将至少一个衬底加载到一个或多个移动横向室中，所述移动横向室承载在邻近两个或更多个处理模块，并且其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。一个或多个驱动系统被致动以沿着轨道推进一个或多个移动横向室中的至少一个。所述至少一个移动传送室与所述处理模块中的至少一个对接，并且所述基板从所述移动横向室传送到所述至少一个处理模块。

2. 发明授权

US07501343B2 Formation of boride barrier layers using chemisorption techniques 有权
标题翻译：使用化学吸附技术形成硼化物阻挡层
公开(公告)号：US07501343B2
公开(公告)日：2009-03-10
申请号：US11739545
申请日：2007-04-24
申请人： Jeong Soo Byun , Alfred Mak
发明人： Jeong Soo Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a metal precursor to form a first boride-containing layer during a first sequential chemisorption process and exposing the substrate to the boron-containing compound, the metal precursor, and a second precursor to form a second boride-containing layer on the first boride-containing layer during a second sequential chemisorption process. In one example, the metal precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和金属前体以形成第一含硼化物层，在第二顺序化学吸附过程期间，将基底暴露于含硼化合物，金属前体和第二前体，以在第一含硼化物层上形成第二含硼化物层。在一个实例中，金属前体含有六氟化钨，含硼化合物含有乙硼烷。在另一个实施方案中，在第二含硼化物层上沉积接触层。接触层可以含有钨并通过化学气相沉积工艺进行沉积。或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

3. 发明申请

US20070007660A1 MASK ETCH PROCESSING APPARATUS 有权
标题翻译：掩模加工设备
公开(公告)号：US20070007660A1
公开(公告)日：2007-01-11
申请号：US11530676
申请日：2006-09-11
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01L23/52
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。

4. 发明申请

US20060223286A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20060223286A1
公开(公告)日：2006-10-05
申请号：US11423535
申请日：2006-06-12
申请人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
发明人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

5. 发明申请

US20050082007A1 Mask etch processing apparatus 有权
标题翻译：掩模蚀刻处理装置
公开(公告)号：US20050082007A1
公开(公告)日：2005-04-21
申请号：US10689783
申请日：2003-10-21
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01J37/32 , H01L21/687 , H01L21/44
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，包括：盖环，包括具有设置在其上的孔的基部，所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面，其中所述凸起表面包括一个或邻近孔的第一衬底支撑构件和设置在盖环上的捕获环，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑构件，其布置在内周边上并且适于接收基底，其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。

6. 发明授权

US06402806B1 Method for unreacted precursor conversion and effluent removal 失效
标题翻译：未反应的前体转化和流出物去除的方法
公开(公告)号：US06402806B1
公开(公告)日：2002-06-11
申请号：US09608659
申请日：2000-06-30
申请人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
发明人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
IPC分类号： C22B1500
CPC分类号： C23C16/45561 , B01D53/002 , B01D53/72 , C23C16/4412 , C30B25/14 , H01J37/32834
摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
摘要翻译：热阱从CVD工艺的排气流转换未反应的有机金属膜前体。转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。热阱下游的冷阱将废气排出的废水冻结。由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。

7. 发明授权

US5858464A Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers 失效
标题翻译：用于最小化CVD室中过多的铝积聚的方法和装置
公开(公告)号：US5858464A
公开(公告)日：1999-01-12
申请号：US791131
申请日：1997-02-13
申请人： Karl Littau , Dashun S. Zhou , Alfred Mak , Ling Chen
发明人： Karl Littau , Dashun S. Zhou , Alfred Mak , Ling Chen
IPC分类号： C23C16/20 , C23C16/44 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/28556 , C23C16/4401 , C23C16/4404
摘要： A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber. In other preferred embodiments, the second temperature ranges from about 200.degree.-300.degree. C.
摘要翻译：一种用于最小化在铝CVD衬底处理操作期间可以在衬底处理室内形成的多余铝沉积的方法和装置。本发明的方法在对至少一个晶片进行铝CVD处理之后，将氮气周期性地引入处理室中，以便最小化腔室各部分中不希望的铝积聚。根据一个实施例，本发明提供一种在衬底处理操作之后使衬底处理室内的多余金属沉积最小化的方法。该方法包括以下步骤：在基板处理操作之后将含氮钝化气体引入室中，并且在引入步骤期间将室的至少一部分保持在第二温度，从而减少室内过量的金属积聚。在优选的实施方案中，在从处理室中除去基材之后进行该方法。在其它优选实施方案中，第二温度范围为约200-300℃

8. 发明授权

US5671117A Electrostatic chuck 失效
标题翻译：静电吸盘
公开(公告)号：US5671117A
公开(公告)日：1997-09-23
申请号：US626667
申请日：1996-03-27
申请人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
发明人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23 , Y10T29/49117
摘要： An electrostatic chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
摘要翻译：一种用于将半导体晶片固定在具有多个孔的基座上以在晶片下方引入冷却气体的静电卡盘。多个孔径减小晶片边缘附近的过热，并在晶片上提供较低的温度梯度。晶片通过静电力抵抗夹在两个电介质层之间的电极层的层压体，使得层压体在晶片上呈现超过电极层的外边缘相当长的平面。层压结构确保了超过电极外边缘的大的晶片区域与层压体接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极层之间的电介质材料的路径长度来提供更长的使用寿命并可能损坏卡盘周围的等离子体材料。

9. 发明授权

US5201990A Process for treating aluminum surfaces in a vacuum apparatus 失效
标题翻译：在真空装置中处理铝表面的方法
公开(公告)号：US5201990A
公开(公告)日：1993-04-13
申请号：US704523
申请日：1991-05-23
申请人： Mei Chang , Ashok Sinha , Turgut Sahin , Alfred Mak , Cissy Leung
发明人： Mei Chang , Ashok Sinha , Turgut Sahin , Alfred Mak , Cissy Leung
IPC分类号： C23C16/44 , C23G5/00 , H01L21/285 , H01L21/321 , H01L21/768
CPC分类号： C23G5/00 , C23C16/4404 , H01L21/28512 , H01L21/28556 , H01L21/321 , H01L21/76877
摘要： A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.
摘要翻译：描述了在用于处理半导体晶片的真空室中暴露于超过400℃的温度时，抑制铝基合金表面的蒸发或升华的方法。该方法包括用包含选自氮和氨的含氮气体的等离子体处理这种铝基合金表面。当使用氮气时，等离子体也必须含有氢气。当正在处理的真空室用于沉积钨时，必须控制处理过程最初10秒内进入室内的含氮气体的最大流量，以避免随后的钨沉积的损害房间。在处理步骤之后，清洁和处理的铝表面优选用氮气（N 2）钝化。

10. 发明申请

US20100173439A1 Methods and systems of transferring a substrate to minimize heat loss 有权
标题翻译：转移衬底以最小化热损失的方法和系统
公开(公告)号：US20100173439A1
公开(公告)日：2010-07-08
申请号：US12319223
申请日：2009-01-03
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry WU , Simon Zhu , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry WU , Simon Zhu , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L31/18
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67173 , H01L21/67196 , H01L21/67207 , H01L21/67706 , H01L21/67748 , H01L21/67754 , Y10S414/135
摘要： A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.
摘要翻译：提供了一种在过程模块或加载锁定站之间传送一个或多个基板同时最小化热损失的方法。在一些实施例中，该方法包括以下步骤：识别存在于初始处理位置P1的衬底S1的目的地位置D1; 如果目的地位置D1被基板S2占用，则将基板S1保持在初始处理位置P1; 并且如果目的地位置D1可用，则将基板S1传送到目的地位置D1。根据另外的实施例，该方法在用于处理基板的系统上进行，该系统包括两个或更多个处理模块，基板处理机器人，负载锁定室和横向基板处理器。横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

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