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1. 发明授权

US06251190B1 Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride 失效
标题翻译：通过钨和氮化钨的原位化学气相沉积形成栅电极连接结构
公开(公告)号：US06251190B1
公开(公告)日：2001-06-26
申请号：US09657880
申请日：2000-09-08
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
IPC分类号： C23C1600
CPC分类号： H01L29/66583 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/76843 , H01L29/4941
摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.
摘要翻译：通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。在沉积之前，用氢等离子体预处理晶片以提高粘附性。钨沉积工艺可以使用六氟化钨和氢气进行CVD。包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

2. 发明授权

US6162715A Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride 失效
标题翻译：通过钨和氮化钨的原位化学气相沉积形成栅电极连接结构的方法
公开(公告)号：US6162715A
公开(公告)日：2000-12-19
申请号：US114839
申请日：1998-07-14
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
IPC分类号： C23C16/02 , C23C16/14 , C23C16/34 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/49 , H01L21/3205
CPC分类号： H01L29/66583 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/76843 , H01L29/4941
摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.
摘要翻译：通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。在沉积之前，用氢等离子体预处理晶片以提高粘附性。钨沉积工艺可以使用六氟化钨和氢气进行CVD。包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

3. 发明授权

US06206967B1 Low resistivity W using B2H6 nucleation step 有权
标题翻译：使用B2H6成核步骤的低电阻率W
公开(公告)号：US06206967B1
公开(公告)日：2001-03-27
申请号：US09594234
申请日：2000-06-14
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Dennis Sauvage
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Dennis Sauvage
IPC分类号： B05C1100
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28556
摘要： A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate. In a preferred embodiment, the flow of the tungsten-containing source is stopped along with the flow of the group III or V hydride and after a period of between 5 and 30 seconds, the flow of the tungsten-containing source is restarted when the pressure is in the deposition zone is increased to the second pressure level.
摘要翻译：用于在基板上沉积钨膜的多步化学气相沉积工艺。沉积工艺的第一步包括成核步骤，其中包含含钨源，III或V族氢化物和还原剂的工艺气体在保持沉积区的同时流入衬底处理室的沉积区处于或低于第一压力水平。在该第一沉积阶段期间，其它工艺变量被保持在适于将第一层钨膜沉积在衬底上的条件下。接下来，在第一阶段之后的第二沉积阶段期间，停止将III或V族氢化物流入沉积区的流动，之后，沉积区中的压力增加到高于第一压力水平的第二压力和其它工艺参数保持在适合于在衬底上沉积第二层钨膜的条件下。在一个优选的实施方案中，随着III或V族氢化物的流动停止含钨源的流动，并且在5至30秒之间的时间段内，当含有钨的源的流量在压力在沉积区中增加到第二压力水平。

4. 发明授权

US6099904A Low resistivity W using B.sub.2 H.sub.6 nucleation step 失效
标题翻译：使用B2H6成核步骤的低电阻率W
公开(公告)号：US6099904A
公开(公告)日：2000-08-08
申请号：US982844
申请日：1997-12-02
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Dennis Sauvage
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Dennis Sauvage
IPC分类号： C23C16/02 , C23C16/14 , H01L21/28 , H01L21/285 , C23C16/08
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28556
摘要： A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate. In a preferred embodiment, the flow of the tungsten-containing source is stopped along with the flow of the group III or V hydride and after a period of between 5 and 30 seconds, the flow of the tungsten-containing source is restarted when the pressure is in the deposition zone is increased to the second pressure level.
摘要翻译：用于在基板上沉积钨膜的多步化学气相沉积工艺。沉积工艺的第一步包括成核步骤，其中包含含钨源，III或V族氢化物和还原剂的工艺气体在保持沉积区的同时流入衬底处理室的沉积区处于或低于第一压力水平。在该第一沉积阶段期间，其它工艺变量被保持在适于将第一层钨膜沉积在衬底上的条件下。接下来，在第一阶段之后的第二沉积阶段期间，停止将III或V族氢化物流入沉积区的流动，之后，沉积区中的压力增加到高于第一压力水平的第二压力和其它工艺参数保持在适合于在衬底上沉积第二层钨膜的条件下。在一个优选的实施方案中，随着III或V族氢化物的流动停止含钨源的流动，并且在5至30秒之间的时间段内，当含有钨的源的流量在压力在沉积区中增加到第二压力水平。

5. 发明授权

US5201990A Process for treating aluminum surfaces in a vacuum apparatus 失效
标题翻译：在真空装置中处理铝表面的方法
公开(公告)号：US5201990A
公开(公告)日：1993-04-13
申请号：US704523
申请日：1991-05-23
申请人： Mei Chang , Ashok Sinha , Turgut Sahin , Alfred Mak , Cissy Leung
发明人： Mei Chang , Ashok Sinha , Turgut Sahin , Alfred Mak , Cissy Leung
IPC分类号： C23C16/44 , C23G5/00 , H01L21/285 , H01L21/321 , H01L21/768
CPC分类号： C23G5/00 , C23C16/4404 , H01L21/28512 , H01L21/28556 , H01L21/321 , H01L21/76877
摘要： A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.
摘要翻译：描述了在用于处理半导体晶片的真空室中暴露于超过400℃的温度时，抑制铝基合金表面的蒸发或升华的方法。该方法包括用包含选自氮和氨的含氮气体的等离子体处理这种铝基合金表面。当使用氮气时，等离子体也必须含有氢气。当正在处理的真空室用于沉积钨时，必须控制处理过程最初10秒内进入室内的含氮气体的最大流量，以避免随后的钨沉积的损害房间。在处理步骤之后，清洁和处理的铝表面优选用氮气（N 2）钝化。

6. 发明申请

US20110151119A1 Methods and Systems of Transferring, Docking and Processing Substrates 有权
标题翻译：转移，对接和处理基板的方法和系统
公开(公告)号：US20110151119A1
公开(公告)日：2011-06-23
申请号：US13038309
申请日：2011-03-01
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L21/673 , C23C16/44 , C23C16/458 , C23C16/56
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67706 , H01L21/67712 , H01L21/67727 , H01L21/67736 , H01L21/67748 , Y10S414/135
摘要： In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.
摘要翻译：根据本文描述的一些实施例，提供了一种用于将衬底转移到两个或更多个工艺模块的方法，包括将至少一个衬底加载到一个或多个移动横向室中，所述移动横向室承载在邻近两个或更多个处理模块，并且其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。一个或多个驱动系统被致动以沿着轨道推进一个或多个移动横向室中的至少一个。所述至少一个移动传送室与所述处理模块中的至少一个对接，并且所述基板从所述移动横向室传送到所述至少一个处理模块。

7. 发明授权

US07501343B2 Formation of boride barrier layers using chemisorption techniques 有权
标题翻译：使用化学吸附技术形成硼化物阻挡层
公开(公告)号：US07501343B2
公开(公告)日：2009-03-10
申请号：US11739545
申请日：2007-04-24
申请人： Jeong Soo Byun , Alfred Mak
发明人： Jeong Soo Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a metal precursor to form a first boride-containing layer during a first sequential chemisorption process and exposing the substrate to the boron-containing compound, the metal precursor, and a second precursor to form a second boride-containing layer on the first boride-containing layer during a second sequential chemisorption process. In one example, the metal precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和金属前体以形成第一含硼化物层，在第二顺序化学吸附过程期间，将基底暴露于含硼化合物，金属前体和第二前体，以在第一含硼化物层上形成第二含硼化物层。在一个实例中，金属前体含有六氟化钨，含硼化合物含有乙硼烷。在另一个实施方案中，在第二含硼化物层上沉积接触层。接触层可以含有钨并通过化学气相沉积工艺进行沉积。或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

8. 发明申请

US20070007660A1 MASK ETCH PROCESSING APPARATUS 有权
标题翻译：掩模加工设备
公开(公告)号：US20070007660A1
公开(公告)日：2007-01-11
申请号：US11530676
申请日：2006-09-11
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01L23/52
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。

9. 发明申请

US20060223286A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20060223286A1
公开(公告)日：2006-10-05
申请号：US11423535
申请日：2006-06-12
申请人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
发明人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

10. 发明申请

US20050082007A1 Mask etch processing apparatus 有权
标题翻译：掩模蚀刻处理装置
公开(公告)号：US20050082007A1
公开(公告)日：2005-04-21
申请号：US10689783
申请日：2003-10-21
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01J37/32 , H01L21/687 , H01L21/44
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，包括：盖环，包括具有设置在其上的孔的基部，所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面，其中所述凸起表面包括一个或邻近孔的第一衬底支撑构件和设置在盖环上的捕获环，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑构件，其布置在内周边上并且适于接收基底，其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。

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