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1. 发明授权

US06167834A Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process 失效
公开(公告)号：US06167834A
公开(公告)日：2001-01-02
申请号：US07928642
申请日：1992-08-13
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, the TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

2. 发明授权

US5449410A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5449410A
公开(公告)日：1995-09-12
申请号：US98538
申请日：1993-07-28
申请人： Mei Chang , Cissy Leung
发明人： Mei Chang , Cissy Leung
IPC分类号： H05H1/46 , C23C16/02 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32862 , H01J2237/0206 , H01J2237/022
摘要： A plasma processing apparatus has a chamber with an open top and a cover plate extending across the open top of the chamber. The cover plate has an opening therethrough. An annular shield of an electrical insulating material is secured to the cover plate around the opening and extends partially across the opening. An aluminum showerhead is within the shield and has holes therethrough through which a gas can pass into the chamber. The showerhead is connected to a source of RF voltage to provide a flow of RF power between the showerhead and an electrode within the chamber. The shield has a plurality of openings therethrough which allows the RF power to flow through the openings from the showerhead to the electrode in the event that the showerhead becomes coated with particles of an insulating material.
摘要翻译：等离子体处理装置具有一个具有开口顶部的腔室和一个延伸穿过腔室的开口顶部的盖板。盖板具有穿过其中的开口。电绝缘材料的环形屏蔽件围绕开口固定到盖板并且部分地延伸穿过开口。铝制喷头位于屏蔽内，并具有穿过其中的孔，气体可通过该孔进入腔室。淋浴头连接到RF电压源，以在淋浴喷头和腔室内的电极之间提供RF功率流。屏蔽件具有多个穿过其中的开口，在喷头变得被绝缘材料的颗粒涂覆的情况下，允许RF功率从喷头流过电极。

3. 发明授权

US5354715A Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process 失效
标题翻译：二氧化硅的热化学气相沉积和原位多步平面化工艺
公开(公告)号：US5354715A
公开(公告)日：1994-10-11
申请号：US861719
申请日：1992-04-01
申请人： David N-K. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David N-K. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/48 , C23C16/04 , C23C16/40 , C23C16/42 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/509 , C23C16/54 , C23F4/00 , C30B25/14 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/683 , H01L21/00 , H01L21/02
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature process for forming a highly conformal layer of silicon dioxide from a plasma of TEOS, oxygen and ozone is also disclosed. This layer can be planarized using an etchback process. Silicon oxide deposition and etchback can be carried out sequentially in the reactor.
摘要翻译：公开了一种高压，高整体的单晶片半导体处理反应器，其能够通过溅射单独地或作为部分的，通过溅射进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和沉积形貌修饰，原位多步处理。该反应器在包括非常高的压力的宽范围的压力下提供均匀的加工。还公开了一种用于从TEOS，氧气和臭氧的等离子体形成高度保形二氧化硅层的低温工艺。该层可以使用回蚀工艺进行平面化。氧化硅沉积和回蚀可以在反应器中顺序进行。

4. 发明授权

US5201990A Process for treating aluminum surfaces in a vacuum apparatus 失效
标题翻译：在真空装置中处理铝表面的方法
公开(公告)号：US5201990A
公开(公告)日：1993-04-13
申请号：US704523
申请日：1991-05-23
申请人： Mei Chang , Ashok Sinha , Turgut Sahin , Alfred Mak , Cissy Leung
发明人： Mei Chang , Ashok Sinha , Turgut Sahin , Alfred Mak , Cissy Leung
IPC分类号： C23C16/44 , C23G5/00 , H01L21/285 , H01L21/321 , H01L21/768
CPC分类号： C23G5/00 , C23C16/4404 , H01L21/28512 , H01L21/28556 , H01L21/321 , H01L21/76877
摘要： A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.
摘要翻译：描述了在用于处理半导体晶片的真空室中暴露于超过400℃的温度时，抑制铝基合金表面的蒸发或升华的方法。该方法包括用包含选自氮和氨的含氮气体的等离子体处理这种铝基合金表面。当使用氮气时，等离子体也必须含有氢气。当正在处理的真空室用于沉积钨时，必须控制处理过程最初10秒内进入室内的含氮气体的最大流量，以避免随后的钨沉积的损害房间。在处理步骤之后，清洁和处理的铝表面优选用氮气（N 2）钝化。

5. 发明授权

US06251190B1 Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride 失效
标题翻译：通过钨和氮化钨的原位化学气相沉积形成栅电极连接结构
公开(公告)号：US06251190B1
公开(公告)日：2001-06-26
申请号：US09657880
申请日：2000-09-08
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
IPC分类号： C23C1600
CPC分类号： H01L29/66583 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/76843 , H01L29/4941
摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.
摘要翻译：通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。在沉积之前，用氢等离子体预处理晶片以提高粘附性。钨沉积工艺可以使用六氟化钨和氢气进行CVD。包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

6. 发明授权

US5332443A Lift fingers for substrate processing apparatus 失效
标题翻译：抬起手指进行基板处理装置
公开(公告)号：US5332443A
公开(公告)日：1994-07-26
申请号：US73958
申请日：1993-06-09
申请人： Sandy M.-S. Chew , Shane D. Clark , Ron L. Rose , Dale R. DuBois , Cissy Leung , Alan F. Morrison , Manus K. Wong
发明人： Sandy M.-S. Chew , Shane D. Clark , Ron L. Rose , Dale R. DuBois , Cissy Leung , Alan F. Morrison , Manus K. Wong
IPC分类号： C23C16/458 , H01L21/00 , H01L21/673 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/4583 , H01L21/67103 , H01L21/68785
摘要： A substrate lifting apparatus for use in a substrate processing apparatus which includes a thermal reactor having a substrate processing chamber and a substrate support located in the chamber. The lifting apparatus consists of a generally circular shaped support with four seats formed therein; four substrate lifting elements, each having a substrate engaging end and a securing tab sized to be received in a seat; a fastener, associated with each lifting element, which secures the tab into the seat; and an adjuster, associated with each lifting element, located between the tab and the seat. When the tab is secured in the seat and the adjuster is operated, the lifting element is caused to move in a plane parallel to a plane formed through the center of the fastener and the adjuster.
摘要翻译：一种用于基板处理装置的基板提升装置，其包括具有基板处理室和位于所述室中的基板支撑件的热反应器。提升装置由大致圆形的支撑件组成，其中形成有四个座; 四个基板提升元件，每个基板提升元件各自具有基板接合端和尺寸设置成容纳在座中的固定片; 与每个提升元件相关联的紧固件，其将突片固定到座中; 以及与每个提升元件相关联的调节器，位于突片和座之间。当突片固定在座椅中并且调节器被操作时，提升元件在平行于通过紧固件和调节器的中心形成的平面的平面中移动。

7. 发明授权

US06206967B1 Low resistivity W using B2H6 nucleation step 有权
标题翻译：使用B2H6成核步骤的低电阻率W
公开(公告)号：US06206967B1
公开(公告)日：2001-03-27
申请号：US09594234
申请日：2000-06-14
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Dennis Sauvage
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Dennis Sauvage
IPC分类号： B05C1100
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28556
摘要： A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate. In a preferred embodiment, the flow of the tungsten-containing source is stopped along with the flow of the group III or V hydride and after a period of between 5 and 30 seconds, the flow of the tungsten-containing source is restarted when the pressure is in the deposition zone is increased to the second pressure level.
摘要翻译：用于在基板上沉积钨膜的多步化学气相沉积工艺。沉积工艺的第一步包括成核步骤，其中包含含钨源，III或V族氢化物和还原剂的工艺气体在保持沉积区的同时流入衬底处理室的沉积区处于或低于第一压力水平。在该第一沉积阶段期间，其它工艺变量被保持在适于将第一层钨膜沉积在衬底上的条件下。接下来，在第一阶段之后的第二沉积阶段期间，停止将III或V族氢化物流入沉积区的流动，之后，沉积区中的压力增加到高于第一压力水平的第二压力和其它工艺参数保持在适合于在衬底上沉积第二层钨膜的条件下。在一个优选的实施方案中，随着III或V族氢化物的流动停止含钨源的流动，并且在5至30秒之间的时间段内，当含有钨的源的流量在压力在沉积区中增加到第二压力水平。

8. 发明授权

US5871811A Method for protecting against deposition on a selected region of a substrate 失效
标题翻译：防止沉积在基底的选定区域上的方法
公开(公告)号：US5871811A
公开(公告)日：1999-02-16
申请号：US477536
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.
摘要翻译：一种用于保护衬底的选定区域以防止沉积在所选区域上的方法。该方法包括以下步骤：将工艺气体流入衬底处理室并将吹扫气体流动到衬底的选定区域，以防止工艺气体接触选定区域或最小化工艺气体与所选区域之间的接触。在各种实施例中，所选择的区域是衬底的背面周边或衬底的边缘。同样在这些实施方案中，工艺气体流入沉积区，以便在衬底的上表面上沉积薄膜层，并建立工艺和吹扫气体的流动，使得工艺气体基本上流过基板的上表面与基板边缘附近的吹扫气体结合，并通过排气系统离开处理室。

9. 发明授权

US5755886A Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing 失效
标题翻译：用于在沉积处理期间防止沉积气体接触衬底的选定区域的装置
公开(公告)号：US5755886A
公开(公告)日：1998-05-26
申请号：US483750
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.
摘要翻译：能够进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和其它基板处理操作的基板处理反应器，所有这些都可以单独进行或作为原位多步骤处理的一部分进行。该反应器包含均匀的径向气体泵送系统，其能够跨过晶片均匀的反应气体流动。还包括上部和下部吹扫气体分散器。上部吹扫气体分散器将吹扫气体向下流向晶片的周边，而下部气体分散器引导吹扫气体穿过晶片的背面。径向泵送气体系统和吹扫气体分散器径向扫掠离开晶片，以防止晶片外部沉积并保持室清洁。

10. 发明授权

US4892753A Process for PECVD of silicon oxide using TEOS decomposition 失效
公开(公告)号：US4892753A
公开(公告)日：1990-01-09
申请号：US262993
申请日：1988-10-26
申请人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

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