专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120244699A1 ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS 有权
标题翻译：原子层沉积材料
公开(公告)号：US20120244699A1
公开(公告)日：2012-09-27
申请号：US13491191
申请日：2012-06-07
申请人： AMIT KHANDELWAL , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
发明人： AMIT KHANDELWAL , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
IPC分类号： H01L21/285
CPC分类号： C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.
摘要翻译：本发明的实施方案提供了一种沉积含钨材料的方法。在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中在约50sccm至约500sccm的范围内。

2. 发明申请

US20120003388A1 METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY 有权
标题翻译：具有可变温度能力的基于热的基板加工的方法和装置
公开(公告)号：US20120003388A1
公开(公告)日：2012-01-05
申请号：US13169373
申请日：2011-06-27
申请人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , BENJAMIN CHENG WANG , AVGERINOS V. GELATOS , KAI WU , MICHAEL P. KARAZIM , JING LIN , OLKAN CUVALCI
发明人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , BENJAMIN CHENG WANG , AVGERINOS V. GELATOS , KAI WU , MICHAEL P. KARAZIM , JING LIN , OLKAN CUVALCI
IPC分类号： C23C16/455 , C23C16/06 , C23C16/46 , C23C16/52 , B05C11/00 , C23C16/458
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/45587 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.
摘要翻译：衬底支撑件可以包括主体; 围绕身体设置的内圈; 围绕所述内圈设置的外圈，在其间形成第一开口; 设置在所述第一开口上方的第一密封环; 设置在所述内圈上方的从所述外圈向内延伸并在所述阴影和外圈之间形成第二开口的阴影环; 设置在所述第二开口上方的第二密封环; 至少部分地由身体和内，外，第一，第二和第二和阴影环限定的空间; 限定在衬底的处理表面和阴影环之间的第一间隙; 以及流体耦合到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在基板时，设置到所述空间的气体通过所述第一间隙流出所述空间。

3. 发明授权

US07838441B2 Deposition and densification process for titanium nitride barrier layers 失效
标题翻译：氮化钛阻挡层的沉积和致密化过程
公开(公告)号：US07838441B2
公开(公告)日：2010-11-23
申请号：US12426815
申请日：2009-04-20
申请人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

4. 发明授权

US5391517A Process for forming copper interconnect structure 失效
标题翻译：形成铜互连结构的工艺
公开(公告)号：US5391517A
公开(公告)日：1995-02-21
申请号：US120097
申请日：1993-09-13
申请人： Avgerinos V. Gelatos , Robert W. Fiordalice
发明人： Avgerinos V. Gelatos , Robert W. Fiordalice
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44
CPC分类号： H01L23/5226 , H01L21/32051 , H01L21/76838 , H01L23/53238 , H01L2924/0002
摘要： A copper metallization structure and process for the formation of electrical interconnections fabricated with pure copper metal is provided. The metallization structure includes an interface layer (22) intermediate to a dielectric layer (12), and a copper interconnect (30). The interface layer (22) functions to adhere the copper interconnect (30) to a device substrate (10) and to prevent the diffusion of copper into underlying dielectric layers. The interconnect layer (22) is fabricated by depositing a first titanium layer (16) followed by the sequential deposition of a titanium nitride layer (18), and a second titanium layer (20). A copper layer (24) is deposited to overlie the second titanium layer (20) and an annealing step is carried out to form a copper-titanium intermetallic layer (26). The titanium nitride layer (18) functions as a diffusion barrier preventing the diffusion of copper into the underlying dielectric layer (12), and the copper titanium intermetallic layer (26) provides an adhesive material, which adheres the copper layer (24) to the device substrate ( 10). Following the formation of the intermetallic layer (26), the device surface is planarized to form a planar surface (28), and to form an inlaid copper interconnect (30).
摘要翻译：提供了一种用于形成用纯铜金属制造的电互连的铜金属化结构和工艺。金属化结构包括介于介电层（12）中间的界面层（22）和铜互连（30）。界面层（22）用于将铜互连（30）粘附到器件衬底（10）并防止铜扩散到下面的介电层中。通过沉积第一钛层（16）然后顺序沉积氮化钛层（18）和第二钛层（20）来制造互连层（22）。沉积铜层（24）以覆盖第二钛层（20），并执行退火步骤以形成铜 - 钛金属间层（26）。氮化钛层（18）作为阻止铜扩散到下面的电介质层（12）中的扩散阻挡层而起作用，铜钛金属间化合物层（26）提供将铜层（24）粘合到器件衬底（10）。在形成金属间层（26）之后，将器件表面平坦化以形成平坦表面（28），并形成镶嵌铜互连（30）。

5. 发明授权

US5064683A Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop 失效
标题翻译：通过使用氮化硼抛光停止来对半导体衬底进行抛光平坦化的方法
公开(公告)号：US5064683A
公开(公告)日：1991-11-12
申请号：US604855
申请日：1990-10-29
申请人： Stephen S. Poon , Avgerinos V. Gelatos
发明人： Stephen S. Poon , Avgerinos V. Gelatos
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/31053 , H01L21/02065 , H01L21/02074 , H01L21/3212
摘要： In a polish palnarization process using a polishing apparatus and an abrasive slurry, a boron nitride (BN) polish stop layer (18) is provided to increase the polish selectivity. The BN layer deposited in accordance with the invention has a hexagonal-close-pack crystal orientation and is characterized by chemical inertness and high hardness. The BN layer has a negligible polish removal rate yielding extremely high polish selectivity when used as a polish stop for polishing a number of materials commonly used in the fabrication of semiconductor devices. In accordance with the invention, a substrate (12) is provided having an uneven topography including elevated regions and recessed regions. A BN polish stop layer (18) is desposited to overlie the substrate (12) and a fill material (20, 36) which can be dielectric material or a conductive material, is deposited to overlie the BN polish stop (18) and the recessed regions of the substrate. The fill material is then polished back until the BN polish stop is reached resulting in the formation of a planar surface (38).
摘要翻译：在使用抛光装置和磨料浆料的抛光法制法中，提供了氮化硼（BN）抛光停止层（18）以提高抛光选择性。根据本发明沉积的BN层具有六方密封组合晶体取向，其特征在于化学惰性和高硬度。当用作抛光通常用于制造半导体器件的许多材料的抛光停止时，BN层具有可忽略的抛光除去率，产生极高的抛光选择性。根据本发明，提供了具有包括升高区域和凹陷区域的不平坦形貌的基板（12）。 BN抛光停止层（18）被布置成覆盖在基板（12）上，并且可以沉积可以是电介质材料或导电材料的填充材料（20,36）以覆盖在BN抛光止挡（18）上并且凹陷基底的区域。然后将填充材料抛光回直到达到BN抛光止挡，从而形成平坦表面（38）。

6. 发明申请

US20130260555A1 METHOD OF ENABLING SEAMLESS COBALT GAP-FILL 有权
标题翻译：实现无缝煤覆盖的方法
公开(公告)号：US20130260555A1
公开(公告)日：2013-10-03
申请号：US13786644
申请日：2013-03-06
申请人： Bhushan N. ZOPE , Avgerinos V. GELATOS , Bo ZHENG , Yu LEI , Xinyu FU , Srinivas GANDIKOTA , Sang-Ho YU , Mathew ABRAHAM
发明人： Bhushan N. ZOPE , Avgerinos V. GELATOS , Bo ZHENG , Yu LEI , Xinyu FU , Srinivas GANDIKOTA , Sang-Ho YU , Mathew ABRAHAM
IPC分类号： H01L21/48
CPC分类号： H01L21/76879 , H01L21/02057 , H01L21/2855 , H01L21/28556 , H01L21/4846 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L23/5329 , H01L29/66621
摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
摘要翻译：提供了在半导体器件的接触结构中沉积接触金属层的方法。在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

7. 发明授权

US08211799B2 Atomic layer deposition of tungsten materials 有权
标题翻译：原子层沉积钨材料
公开(公告)号：US08211799B2
公开(公告)日：2012-07-03
申请号：US13160378
申请日：2011-06-14
申请人： Amit Khandelwal , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
发明人： Amit Khandelwal , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.
摘要翻译：本发明的实施方案提供了一种沉积含钨材料的方法。在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中在约50sccm至约500sccm的范围内。

8. 发明授权

US08123860B2 Apparatus for cyclical depositing of thin films 失效
标题翻译：用于循环沉积薄膜的装置
公开(公告)号：US08123860B2
公开(公告)日：2012-02-28
申请号：US12261487
申请日：2008-10-30
申请人： Randhir P. S. Thakur , Alfred W. Mak , Ming Xi , Walter Benjamin Glenn , Ahmad A. Khan , Ayad A. Al-Shaikh , Avgerinos V. Gelatos , Salvador P. Umotoy
发明人： Randhir P. S. Thakur , Alfred W. Mak , Ming Xi , Walter Benjamin Glenn , Ahmad A. Khan , Ayad A. Al-Shaikh , Avgerinos V. Gelatos , Salvador P. Umotoy
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/452 , C23C16/45536 , C23C16/45565 , C23C16/45582 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32834 , H01L21/6719
摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.
摘要翻译：一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。

9. 发明授权

US07745333B2 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US07745333B2
公开(公告)日：2010-06-29
申请号：US12179002
申请日：2008-07-24
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

10. 发明授权

US07691442B2 Ruthenium or cobalt as an underlayer for tungsten film deposition 有权
标题翻译：钌或钴作为钨膜沉积的底层
公开(公告)号：US07691442B2
公开(公告)日：2010-04-06
申请号：US12197049
申请日：2008-08-22
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： B32B15/00 , B32B15/01 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.
摘要翻译：本发明的实施例提供了一种在衬底上沉积材料的方法。在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式