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1. 发明授权

US5820664A Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same 失效
标题翻译：用于化学气相沉积的前体组合物和包含其的配体交换金属 - 有机前体溶液
公开(公告)号：US5820664A
公开(公告)日：1998-10-13
申请号：US414504
申请日：1995-03-31
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G02B6/036 , H01L39/24 , C09K3/00
CPC分类号： H01L39/2441 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/45561 , Y10S423/14
摘要： A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.
摘要翻译：一种金属源试剂液体溶液，其包含：（i）至少一种金属配位络合物，其包含与稳定络合物中的至少一种配位体配位结合的金属，其中所述配体选自β-二酮化合物， β-酮基，β-二亚胺，C 1 -C 8烷基，C 2 -C 10烯基，C 2 -C 15环烯基，C 6 -C 10芳基，C 1 -C 8烷氧基及其氟化衍生物; 和（ii）金属配位络合物的溶剂。该溶液有效地用于金属配位络合物如Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd的金属化学气相沉积，Cr，W，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi ，和/或Yb。溶剂可以包括甘醇二甲醚溶剂，链烷醇，有机醚，脂族烃和/或芳族烃。具有两种或更多种金属配位络合物的本发明的溶液对有害的配体交换反应具有抗性，这对于CVD应用的金属络合物的稳定性和/或挥发性是不利的。

2. 发明授权

US6110529A Method of forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在基板上形成金属膜的方法
公开(公告)号：US6110529A
公开(公告)日：2000-08-29
申请号：US484654
申请日：1995-06-07
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C07F3/00 , C07F5/00 , C07F7/00 , C07F9/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C07F3/003 , C07F19/005 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441
摘要： A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种在衬底上形成金属膜的方法，包括通过化学气相沉积从所述下式的金属有机络合物沉积所述金属膜：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮化合物，β-硫代酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧基化物和希夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

3. 发明授权

US08299286B2 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US08299286B2
公开(公告)日：2012-10-30
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Connie L. Gordon, legal representative , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
发明人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
IPC分类号： C07F7/00 , C23C18/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A β-diketonate alkoxide metal compound and a source reagent composition are provided. The β-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one β-diketonate ligand.
摘要翻译：提供了一种二酮醇盐金属化合物和一种源试剂组合物。所述二烷基醇盐金属化合物可以包括选自Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd，Cr，W ，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi，Lu，Th ，Pd，Pt，Ga，In，Au，Ag，Li，Na，K，Rb，Cs，Mo和Yb。该金属可以与至少一种醇盐配体和一种β-二酮配体络合。

4. 发明申请

US20110171382A1 SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US20110171382A1
公开(公告)日：2011-07-14
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
IPC分类号： C23C16/06 , C07C49/92 , C07F7/28 , C07F7/00 , C07F7/24 , C07F5/00 , C09D1/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.
摘要翻译：一种金属有机络合物组合物，其包含选自以下的金属有机络合物：包含与一个或多个单齿或多齿有机配体配位的一个或多个金属中心原子的金属有机络合物，并与一个或多个络合的单齿或多齿配位体络合，所述配位体含有一个或多个独立地选自元素C，N，H，S，O和F的原子的原子; 其中当金属原子数为1并且同时复合单齿或多齿配体的数目为1时，金属有机络合物的络合单齿或多齿配体选自β-酮亚胺，β-二亚胺，C2- C10链烯基，C2-C15环烯基和C6-C10芳基。

5. 发明授权

US5677002A Chemical vapor deposition of tantalum- or niobium-containing coatings 失效
标题翻译：化学气相沉积钽或铌的涂层
公开(公告)号：US5677002A
公开(公告)日：1997-10-14
申请号：US453380
申请日：1995-05-30
申请人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
发明人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
IPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C23C16/00
CPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C23C16/405
摘要： Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formula M(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.y wherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups,
摘要翻译：适合用作化学气相沉积源试剂的铌和钽化合物，以及使用该化合物沉积含铌或钽的涂层的方法。该化合物具有式M（OR1）x（R2-C（GH）-C-C（G）-R3）y，其中M是钽或铌; G是氧或硫; 并且R 1，R 2和R 3独立地选自烃基，氟烷基或烷氧基，

6. 发明授权

US5679815A Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same 失效
标题翻译：用于化学气相沉积工艺的钽和铌试剂，以及使用其沉积涂层的方法
公开(公告)号：US5679815A
公开(公告)日：1997-10-21
申请号：US307316
申请日：1994-09-16
申请人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
发明人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
IPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C04B35/00
CPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C23C16/405
摘要： Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formula M(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.y wherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.
摘要翻译：适合用作化学气相沉积源试剂的铌和钽化合物，以及使用该化合物沉积含铌或钽的涂层的方法。该化合物具有式M（OR1）x（R2-C（GH）-C-C（G）-R3）y，其中M是钽或铌; G是氧或硫; 且R 1，R 2和R 3独立地选自烃基，氟代烷基或烷氧基。

7. 发明授权

US5972743A Precursor compositions for ion implantation of antimony and ion implantation process utilizing same 失效
标题翻译：用于离子注入锑的前体组合物和利用其的离子注入工艺
公开(公告)号：US5972743A
公开(公告)日：1999-10-26
申请号：US759761
申请日：1996-12-03
申请人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
发明人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
IPC分类号： C23C14/48 , C30B31/00 , C30B31/22 , H01L21/265 , H01L21/338 , H01L21/331
CPC分类号： H01L21/26513 , C23C14/48 , C30B31/00 , C30B31/22 , Y10S438/914
摘要： A method for n-doping a material layer with antimony, comprising ion implanting antimony from an antimony precursor composition including a compound of the formula SbX.sub.n ((CH.sub.2).sub.y SiR.sub.3).sub.n-3, wherein: n is an integer having a value of 1 or 2; y is an integer having a value of from 1 to 3 inclusive; each R is independently selected from C.sub.1 -C.sub.4 alkyl; and each X is independently selected from halo substituents. The antimony precursor composition may further include a fluorine-containing auxiliary gas, to effect in situ cleaning of the ionization chamber during ion implantation.
摘要翻译：一种用锑掺杂材料层的方法，包括从包含式SbXn（（CH 2）y SiR 3）n-3的化合物的锑前体组合物离子注入锑，其中：n是具有值1的整数或 2; y为1〜3的整数，每个R独立地选自C 1 -C 4烷基; 并且每个X独立地选自卤素取代基。锑前体组合物还可以包括含氟辅助气体，以在离子注入期间实现电离室的原位清洁。

8. 发明授权

US5902639A Method of forming bismuth-containing films by using bismuth amide compounds 失效
标题翻译：通过使用铋酰胺化合物形成含铋膜的方法
公开(公告)号：US5902639A
公开(公告)日：1999-05-11
申请号：US828566
申请日：1997-03-31
申请人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
发明人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
IPC分类号： C07F9/94 , C23C16/40 , G02F1/00 , G02F1/05 , C23C16/00
CPC分类号： G02F1/0027 , C07F9/94 , C23C16/40 , C23C16/407 , G02F1/0541 , G02F2203/12
摘要： A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL.sup.1.sub.x L.sup.2.sub.y (NR.sup.1 R.sub.2).sub.z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L.sup.1 and L.sup.2 is independently selected from C.sub.1 -C.sub.4 alkyl, C.sub.1 14 C.sub.4 alkoxide, .beta.-diketonate, cyclic amido, cyclic tris-alkoxoamine, and C.sub.6 -C.sub.10 aryl; and each of R.sup.1 and R.sup.2 is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 alkoxy, C.sub.6 -C.sub.8 cycloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.4 carboxyl, and --SiR.sup.3.sub.3 wherein each R.sup.3 is independently selected from H and C.sub.1 -C.sub.4 alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices, as buffer layers for the fabrication of ferroelectric material devices, and in dielectric, ferroelectric and superconductor thin film applications.
摘要翻译：一种在基板上形成含铋材料层的方法，包括用于形成含铋源源蒸气的铋酰胺源试剂的起泡器输送或液体输送蒸发，以及从含铋源源蒸气在铋基底上沉积以在基板上形成含铋材料层。铋酰胺源试剂可以包括式BiL1xL2y（NR1R2）z的铋酰胺化合物其中：z是1至3的整数; x + y + z = 3; L1和L2各自独立地选自C 1 -C 4烷基，C 11-14 C 4醇盐，β-二酮酸盐，环状酰胺基，环状三烷氧基胺和C 6 -C 10芳基; R 1和R 2各自独立地选自C 1 -C 8烷基，C 1 -C 8烷氧基，C 6 -C 8环烷基，C 6 -C 10芳基，C 1 -C 4羧基和-SiR 33，其中每个R 3独立地选自H和C 1 -C 4 烷基。本发明的含铋膜可用于构造空间光调制器件，作为用于制造铁电材料器件的缓冲层，以及介电，铁电和超导体薄膜应用。

9. 发明授权

US5698022A Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films 失效
标题翻译：镧系元素/磷前体组合物用于镧系元素/磷氧化物膜的MOCVD
公开(公告)号：US5698022A
公开(公告)日：1997-12-16
申请号：US696478
申请日：1996-08-14
申请人： Timothy E. Glassman , Paul V. Chayka
发明人： Timothy E. Glassman , Paul V. Chayka
IPC分类号： C07F9/09 , C07F9/50 , C23C16/18 , C23C16/40 , C23C16/56 , C23C16/00 , C07F5/00
CPC分类号： C23C16/18 , C07F9/095 , C07F9/5045 , C23C16/40 , C23C16/56
摘要： A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA.sub.3 (L).sub.x ; (ii) phosphido complexes of the formulae M(PR.sub.3).sub.3 or M(PR.sub.3).sub.3 L.sub.x ; and (iii) disubstituted phosphate complexes of the formulae A.sub.2 M(O.sub.2 P(OR).sub.2), AM(O.sub.2 P(OR).sub.2).sub.2, and M(O.sub.2 P(OR).sub.2).sub.3, wherein: x is from 1 to 5, A=Cp or .beta.-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C.sub.1 -C.sub.8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a .beta.-diketonate compound of formula (i), L is not phosphate or phosphine oxide. The precursor composition may be employed for forming a lanthanide metal/phosphorus oxide film on a substrate, by depositing a lanthanide metal/phosphorus material on the substrate from the lanthanide metal/phosphorus precursor composition in vaporized form, and incorporating oxygen in the lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate.
摘要翻译：用于镧系元素金属/磷氧化物膜的气相沉积形成的前体组合物，其包含前体化合物，所述前体化合物选自：（i）式MA3（L）x的加合物; （ii）式M（PR3）3或M（PR3）3Lx的膦酰基配合物; 和（iii）式A2M（O 2 P（OR）2），AM（O 2 P（OR）2）2和M（O 2 P（OR）2）3）的二取代磷酸盐络合物，其中：x为1至5，A Cp =β-二酮，Cp =环戊二烯基，甲基环戊二烯基或TMS-环戊二烯基，R = C 1 -C 8烷基，L =选自磷化氢，氧化膦，亚磷酸酯，磷酸酯和1 （二甲氧基磷酰基）苯，但条件是：当x为2或更大时，每个L可以与另一个L相同或不同; 并且当前体化合物是式（i）的β-二酮化合物时，L不是磷酸盐或氧化膦。前体组合物可以用于在基底上形成镧系元素金属/磷氧化物膜，通过在镧系元素金属/磷前体组合物上以蒸发形式沉积镧系元素金属/磷材料在基体上，并将镧系金属/ 磷材料在基板上形成镧系元素金属/磷氧化物膜。

10. 发明授权

US09691839B2 Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers 有权
公开(公告)号：US09691839B2
公开(公告)日：2017-06-27
申请号：US13996494
申请日：2011-12-14
申请人： Nick Lindert , Timothy E. Glassman , Andre Baran
发明人： Nick Lindert , Timothy E. Glassman , Andre Baran
IPC分类号： H01L27/108 , H01L49/02
CPC分类号： H01L28/40 , H01L27/108 , H01L27/10808 , H01L27/10852 , H01L28/75 , H01L28/90
摘要： Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.

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