专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11624126B2 Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3(100) or (−201) substrates by chemical vapor deposition 有权
公开(公告)号：US11624126B2
公开(公告)日：2023-04-11
申请号：US17231382
申请日：2021-04-15
申请人： Ohio State Innovation Foundation
发明人： Hongping Zhao , A F M Anhar Uddin Bhuiyan , Zixuan Feng
IPC分类号： C30B25/18 , C30B29/22 , C30B29/68 , C30B25/16 , C30B31/00
摘要： Disclosed herein methods of forming an Al—Ga containing film comprising: a) exposing a substrate comprising a β-Ga2O3, wherein the substrate has a (100) or (−201) orientation, to a vapor phase comprising an aluminum precursor and a gallium precursor; and b) forming a β-(AlxGa1-x)2O3 thin film by a chemical vapor deposition at predetermined conditions and wherein x is 0.01≤x≤0.7. Also disclosed herein are devices comprising the inventive films.

2. 发明授权

US10720334B2 Selective cyclic dry etching process of dielectric materials using plasma modification 有权
公开(公告)号：US10720334B2
公开(公告)日：2020-07-21
申请号：US16041044
申请日：2018-07-20
申请人： ASM IP Holding B.V.
发明人： Rene Henricus Jozef Vervuurt , Nobuyoshi Kobayashi , Takayoshi Tsutsumi , Masaru Hori
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/3213 , C23C16/02 , B81C1/00 , C30B31/00 , C30B33/08 , C30B33/12 , H01L21/311 , H01L21/308 , H01L21/3105
摘要： In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

3. 发明申请

US20110019982A1 Rapid thermal processing apparatus and method of manufacture of semiconductor device 有权
标题翻译：快速热处理装置及其制造方法
公开(公告)号：US20110019982A1
公开(公告)日：2011-01-27
申请号：US12923591
申请日：2010-09-29
申请人： Tomohiro Kubo
发明人： Tomohiro Kubo
IPC分类号： C30B31/00 , H01L21/66
CPC分类号： H01L21/67248 , H01L21/67115
摘要： A rapid thermal processing apparatus comprises a processing chamber which subjects a semiconductor substrate to rapid thermal processing. A substrate support part is arranged in the processing chamber and supports the substrate. A lamp part optically irradiates the substrate supported by the substrate support part and heats the substrate. A thermo sensor is provided to measure a temperature of the substrate. A temperature computing part computes the temperature of the substrate based on an output signal of the thermo sensor. A control part controls an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part. In this apparatus, the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a measured reflectivity of a surface of the substrate.
摘要翻译：一种快速热处理设备包括一个使半导体衬底快速热处理的处理室。衬底支撑部分布置在处理室中并支撑衬底。灯部件对由基板支撑部支撑的基板进行光照射，并加热基板。提供热传感器来测量衬底的温度。温度计算部件基于热传感器的输出信号来计算基板的温度。控制部根据由温度计算部计算的温度来控制灯部的照射强度。在该装置中，提供控制部件，用于基于所测量的基板表面的反射率校正灯部件的照射强度的控制参数。

4. 发明授权

US07329947B2 Heat treatment jig for semiconductor substrate 有权
标题翻译：半导体基板用热处理夹具
公开(公告)号：US07329947B2
公开(公告)日：2008-02-12
申请号：US10750883
申请日：2004-01-05
申请人： Naoshi Adachi , Kazushi Yoshida , Yoshiro Aoki
发明人： Naoshi Adachi , Kazushi Yoshida , Yoshiro Aoki
IPC分类号： F27D5/00 , H01L23/34 , H01L21/48 , C30B31/00 , C30B31/14
CPC分类号： H01L21/67309 , H01L21/00 , H01L21/68 , Y10S414/135
摘要： When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that holds the first jig and is mounted on a heat treatment boat is adopted as a heat treatment boat of a vertical heat treatment furnace, the stress concentrated during the heat treatment on a particular portion of the semiconductor substrate can be reduced; in the case of a semiconductor substrate large in the tare stress and having an outer shape of 300 mm being heat treated, or even in the case of the heat treatment being carried out under very high temperature conditions, the slips can be suppressed from occurring. The present invention can be widely applied as a stable heat treatment method of semiconductor substrates.
摘要翻译：当包括与被热处理和支撑半导体衬底的半导体衬底直接接触的硅第一夹具的半导体衬底的二分割结构热处理夹具和保持第一夹具的第二夹具（保持器）和被安装在热处理船上作为立式热处理炉的热处理船，可以减少在半导体基板的特定部分的热处理过程中集中的应力; 在热应变大且外观为300mm的半导体基板的情况下，即使在非常高的温度条件下进行热处理的情况下，也可以抑制滑动。本发明可广泛应用于半导体基板的稳定的热处理方法。

5. 发明申请

US20050281301A1 Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material 有权
公开(公告)号：US20050281301A1
公开(公告)日：2005-12-22
申请号：US11140271
申请日：2005-05-27
申请人： Sergey Mirror , Vladimir Federov
发明人： Sergey Mirror , Vladimir Federov
IPC分类号： H01S3/16 , C30B31/00 , C30B31/02 , H01S3/06 , H01S3/08 , H01S3/081 , H01S3/094 , H01S3/0941 , H01S3/1055 , H01S3/113
CPC分类号： H01S3/0805 , C30B29/48 , C30B31/00 , C30B31/02 , H01S3/0014 , H01S3/0604 , H01S3/0627 , H01S3/08009 , H01S3/08086 , H01S3/094038 , H01S3/094042 , H01S3/094046 , H01S3/09415 , H01S3/1055 , H01S3/108 , H01S3/113 , H01S3/115 , H01S3/117 , H01S3/162 , H01S3/1623 , H01S3/1628 , H01S2301/04 , Y10S438/917
摘要： A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. The gain material is susceptible to utilization of direct diode or fiber laser pumping of a microchip laser with a level of power density providing formation of positive lens and corresponding cavity stabilization as well as threshold population inversion in the laser material. Multiple applications of the laser material are contemplated in the invention.

6. 发明申请

US20050064632A1 Soi wafer and method for manufacturing soi wafer 有权
标题翻译： Soi晶圆及其制造方法
公开(公告)号：US20050064632A1
公开(公告)日：2005-03-24
申请号：US10500580
申请日：2003-10-24
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： C23C14/48 , C30B15/00 , C30B29/06 , C30B31/00 , C30B31/22 , C30B33/00 , C30B33/04 , C30B33/06 , C30B33/10 , H01L21/02 , H01L21/322 , H01L21/762 , H01L27/12 , H01L21/00 , H01L21/30 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting hydrogen ions etc. from a surface of a bond wafer 21 to form an ion-implanted layer 24 inside the wafer, bonding the ion-implanted surface of the bond wafer and a surface of a base wafer 22 via an oxide film 23 or directly, and forming an SOI wafer by delaminating a part of the bond wafer at the ion-implanted layer by heat treatment, wherein a silicon wafer consisting of silicon single crystal grown by Chochralski method, which is occupied by N region outside OSF generated in a ring shape and has no defect region detected by Cu deposition method, is used as the bond wafer. Thereby, even in the case of forming an extremely thin SOI layer 27 such that, for example, its thickness is 200 nm or less, there is provided an SOI wafer which has an excellent electric property without causing micro pits by cleaning with hydrofluoric acid etc., and in addition, can be produced without increasing the number of process.
摘要翻译：在制造SOI晶片的方法中，包括从接合晶片21的表面注入氢离子等以在晶片内形成离子注入层24的步骤，将接合晶片的离子注入表面和通过氧化膜23或直接形成基底晶片22，并且通过热处理在离子注入层分层接合晶片的一部分而形成SOI晶片，其中由通过Chochralski方法生长的由硅单晶组成的硅晶片，其被OS环境外的N区域所占据，并且没有通过Cu沉积法检测到缺陷区域，被用作接合晶片。因此，即使在形成极薄的SOI层27的情况下，例如其厚度为200nm以下，则提供了通过用氢氟酸清洗而不引起微坑的电性能优异的SOI晶片，而且可以在不增加处理次数的情况下生产。

7. 发明申请

US20050061232A1 Doped organic semiconductor materials and process for their preparation 有权
标题翻译：掺杂有机半导体材料及其制备方法
公开(公告)号：US20050061232A1
公开(公告)日：2005-03-24
申请号：US10920062
申请日：2004-08-17
申请人： Ansgar Werner , Fenghong Li , Martin Pfeiffer
发明人： Ansgar Werner , Fenghong Li , Martin Pfeiffer
IPC分类号： H01L51/50 , C07C13/15 , C07C13/24 , C07C15/20 , C30B15/00 , C30B21/06 , C30B23/00 , C30B25/00 , C30B27/02 , C30B28/10 , C30B28/12 , C30B28/14 , C30B30/04 , C30B31/00 , H01L31/04 , H01L51/00 , H01L51/30 , H01L51/40 , H01L51/42 , H05B33/14 , H05B33/22
CPC分类号： H01L51/002 , H01L51/005 , H01L51/0052 , H01L51/0053 , H01L51/0062 , H01L51/5052 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.
摘要翻译：本发明涉及通过掺杂掺杂剂制备具有增加的电荷载流子密度和有效载流子迁移率的掺杂有机半导体材料的方法，其中将掺杂剂混入有机半导体材料之后的氢，碳一氧化碳，氮或羟基自由基被分离，并且至少一个电子被转移到半导体材料或半导体材料。该方法的特征在于使用不带电荷的有机化合物作为掺杂剂。掺杂的有机半导体材料可以通过其中一种方法获得。半导体材料的特征在于掺杂层含有至少一种有机化合物的阳离子，有机化合物的不带电形式在空气中不稳定。

8. 发明授权

US3214653A Gold bonded, boron containing semiconductor devices 失效
标题翻译：金键合，含硼半导体器件
公开(公告)号：US3214653A
公开(公告)日：1965-10-26
申请号：US25631663
申请日：1963-02-05
申请人： HUGHES AIRCRAFT CO
发明人： LEONARD BERNSTEIN
IPC分类号： B23K35/30 , C22C1/02 , C22C5/02 , C30B31/00 , H01L21/00
CPC分类号： C22C1/02 , B23K35/3013 , C22C5/02 , C30B31/00 , H01L21/00

9. 发明授权

US3211595A P-type alloy bonding of semiconductors using a boron-gold alloy 失效
标题翻译：使用硼 - 金合金的半导体的P型合金结合
公开(公告)号：US3211595A
公开(公告)日：1965-10-12
申请号：US85034859
申请日：1959-11-02
申请人： HUGHES AIRCRAFT CO
发明人： LEONARD BERNSTEIN
IPC分类号： B23K35/30 , C22C1/02 , C22C5/02 , C30B31/00 , H01L21/00
CPC分类号： C22C1/02 , B23K35/3013 , C22C5/02 , C30B31/00 , H01L21/00

10. 发明授权

US10229768B2 Method for manufacturing graphene layer 有权
公开(公告)号：US10229768B2
公开(公告)日：2019-03-12
申请号：US14425112
申请日：2012-11-26
申请人： HANWHA AEROSPACE CO., LTD.
发明人： Jong-hyuk Yoon
IPC分类号： H01B1/00 , C01B32/00 , B32B37/00 , B32B38/00 , B82Y30/00 , B82Y40/00 , C30B29/00 , C30B31/00 , H01B1/04 , C30B29/02 , C30B31/06 , B32B37/20 , B32B38/10 , C01B32/186 , C01B32/194
摘要： A method of manufacturing graphene, the method including: preparing a carrier member on which the graphene is formed on one surface thereof; exposing the graphene to dopant vapor to dope the graphene; transferring the doped graphene onto a target member; and removing the carrier member.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式